SKiM 150GD128D . */0( Absolute Maximum Ratings Symbol Conditions IGBT 1(2 ( (78 12 : !" 1 SKiM 4 . */ !64" 0( . 3 >= % %78 . */ !64" 0( . 3 %8 . 34 @ =@ : . 3/4 0( Features 1(2+ (2 12 . 1(2@ ( . 6 ) 12 . 4@ 1(2 . 1(2@ : . */ !3*/" 0( : . */ !3*/" 0( : . */ !3*/" 0( 1(2 ( ( ( ( #(2 12 . 4@ 1(2 . */ 1@ . 3 8DE 12 . 4@ 1(2 . */ 1@ . 3 8DE 12 . 4@ 1(2 . */ 1@ . 3 8DE 7((F22F $! $! 1(( . A44 1 ( . 344 ) 7 . 7 . C : . 3*/ 0( 12!" (2 ! " # $ % & ' ()# $ $ $ ) *+, -( !- ( $ $" $' ( $ Typical Applications $ $ ' )( 3*44 334 !64" *44 9 *4 ;<4 === 3/4 !3*/" 3*/ 1 ) ) 1 0( 0( */44 1 334 !?4" *44 ) ) 3344 ) . */0( Target Data Units )( 3 = Characteristics Symbol Conditions IGBT SKiM 150GD128D Values Inverse diode SPT IGBT Module $ $ ! " " " . 344 )@ 12 . 3/ 1 : . */ !3*/" 0( min. typ. </ // 43 A/ 4, 1 ) 3 !4 B" B !3*" 3 3/ !3 4/" 3* !3/" 1 C !2 " 12 9 3/ 1 2 !2 " HD A<@ : . 3*/ 0( max. Units 3 B !* 3" * ,/ !* //" 1 3/ % % % D ' B 3 3 ; . */ !3*/" 0( 2 $ 3 ,/ !3 ?/" C 33 / !B /" G G 1(( . A44 1@ ( . 344 ) Inverse diode 1% . 12( 1+ 778 J % . 344 )@ 12 . 4 1@ : . */ !3*/" 0( : . */ !3*/" 0( : . */ !3*/" 0( % . 344 )@ : . 3*/ 0( 12 . 4 1 $K$ . )KL 2 7 . 7 * !3 6" * / !* ," 1 33 B 3 </ !3 */" 3, !33" 1 I ) L( .C G Thermal characteristics 7!:;" 4< HKM 7!:;" %M- 4/ HKM Temperature Sensor 7 . */ !344" 0( 3 !A ?" NC . */ !344" 0( , !*" O Mechanical data 83 8* N !8/" !8A" * < , / ,34 GD 1 14-11-2007 LAN (c) by SEMIKRON SKiM 150GD128D Dimensions in mm - ( H8 < ( H8 < This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 2 14-11-2007 LAN (c) by SEMIKRON