Never stop thinking.
HYB25D512400AT
HYB25D512800AT
HYB25D512160AT
512Mbit Double Data Rate SDRAM
DDR SDRAM
Data Sheet, Rev. 1.0, March 2004
Memory Products
The information in this document is subject to change without notice.
Edition 2004-03
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
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approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Never stop thinking.
HYB25D512400AT
HYB25D512800AT
HYB25D512160AT
512Mbit Double Data Rate SDRAM
DDR SDRAM
Data Sheet, Rev. 1.0, March 2004
Memory Products
Template: mp_a4_v2.3_2004-01-14.fm
HYB25D512400AT HYB25D512800AT HYB25D512160AT
Revision History: Rev. 1.0 2004-03
Previous Revision: Rev. 0.92 2004-02
All Editorial Changes see Change List
Previous Revision: Rev. 0.91 2003-08
Page Subjects (major changes since last revision)
All Deleted –5 and –8 speed
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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Data Sheet 5 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
1Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.1 Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.2 Mode Register Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.2.1 Burst Length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3.2.2 Burst Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.2.3 Read Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.2.4 Operating Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3 Extended Mode Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.3.1 DLL Enable/Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.3.2 Output Drive Strength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4 Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.5 Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.5.1 Bank/Row Activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.5.2 Reads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.5.3 Writes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.5.4 Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
3.5.5 Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
3.6 Simplified State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
4.1 Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
4.2 Normal Strength Pull-down and Pull-up Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
4.3 Weak Strength Pull-down and Pull-up Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
4.4 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
4.5 IDD1: Operating Current: One Bank Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
5Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table of Contents
HYB25D512[16/40/80]0AT–[6/7/7F]
Overview
Data Sheet 6 Rev. 1.0, 2004-03
1 Overview
1.1 Features
Double data rate architecture: two data transfers per clock cycle
Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the
receiver
DQS is edge-aligned with data for reads and is center-aligned with data for writes
Differential clock inputs (CK and CK)
Four internal banks for concurrent operation
Data mask (DM) for write data
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
Burst Lengths: 2, 4, or 8
CAS Latency: (1.5), 2, 2.5, 3
Auto Precharge option for each burst access
Auto Refresh and Self Refresh Modes
•7.8µs Maximum Average Periodic Refresh Interval
2.5 V (SSTL_2 compatible) I/O
VDDQ = 2.5 V ± 0.2 V (DDR266A, DDR333)
VDD = 2.5 V ± 0.2 V (DDR266, DDR333)
P-TSOP66II-1 package
1.2 Description
The 512Mbit Double Data Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing
536,870,912 bits. It is internally configured as a quad-bank DRAM.
The 512Mbit Double Data Rate SDRAM uses a double-data-rate architecture to achieve high-speed operation.
The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer
two data words per clock cycle at the I/O pins. A single read or write access for the 512Mbit Double Data Rate
SDRAM effectively consists of a single 2n-bit wide, one clock cycle data transfer at the internal DRAM core and
two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver.
DQS is a strobe transmitted by the DDR SDRAM during Reads and by the memory controller during Writes. DQS
is edge-aligned with data for Reads and center-aligned with data for Writes.
The 512Mbit Double Data Rate SDRAM operates from a differential clock (CK and CK; the crossing of CK going
HIGH and CK going LOW is referred to as the positive edge of CK). Commands (address and control signals) are
registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is
referenced to both edges of DQS, as well as to both edges of CK.
Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration
Table 1 Performance –6/–7/–7F
Part Number Speed Code 6–7-7FUnit
Speed Grade Component DDR333B DDR266A DDR266
Module PC2700–2533 PC2100-2033 PC2100-2022
max. Clock Frequency @CL3 fCK3 166 MHz
@CL2.5 fCK2.5 166 143 143 MHz
@CL2 fCK2 133 133 133 MHz
Data Sheet 7 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Overview
of an Active command, which is then followed by a Read or Write command. The address bits registered
coincident with the Active command are used to select the bank and row to be accessed. The address bits
registered coincident with the Read or Write command are used to select the bank and the starting column location
for the burst access.
The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4 or 8 locations. An Auto
Precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst
access.
As with standard SDRAMs, the pipelined, multibank architecture of DDR SDRAMs allows for concurrent operation,
thereby providing high effective bandwidth by hiding row precharge and activation time.
An auto refresh mode is provided along with a power-saving power-down mode. All inputs are compatible with the
JEDEC Standard for SSTL_2. All outputs are SSTL_2, Class II compatible.
Note: The functionality described and the timing specifications included in this data sheet are for the DLL Enabled
mode of operation.
Table 2 Ordering Information
Part Number1)
1) HYB: designator for memory components; 25D: DDR SDRAMs at VDDQ = 2.5 V; 512: 512Mbit density;
400/800/160: Product variations x4, x8 and x16: A: Die revision A; T: Package type TSOP;
–6/–7/–7F: speed grade - see Table 2
Org. CAS-RCD-RP
Latencies
Clock
(MHz)
CAS-RCD-RP
Latencies
Clock
(MHz)
Speed Package
HYB25D512400AT–6 ×4 2.5-3-3 166 2.0-3-3 133 DDR333 P-TSOP66II-1
HYB25D512800AT–6 ×8
HYB25D512160AT–6 ×16
HYB25D512400AT–7 ×4143 DDR266A
HYB25D512800AT–7 ×8
HYB25D512160AT–7 ×16
HYB25D512800AT–7F ×8 2.0-2-2 DDR266
HYB25D512[16/40/80]0AT–[6/7/7F]
Pin Configuration
Data Sheet 8 Rev. 1.0, 2004-03
2 Pin Configuration
Figure 1 Pin Configuration P-TSOP66II-1
1
2
3
4
5
6
9
10
11
12
13
14
7
8
15
16
17
18
19
20
21
22
66
65
64
63
62
61
58
57
56
55
54
53
60
59
52
51
50
49
48
47
46
45
23
24
25
44
43
42
26
27
41
40
28
29
30
31
32
33
39
38
37
36
35
34
VDD
DQ0
VDDQ
N.C.
DQ1
VSSQ
VDDQ
N.C.
DQ3
VSSQ
N.C.
N.C.
N.C.
DQ2
VDDQ
N.C.
N.C.
VDD
N.C.
N.C.
WE
CAS
RAS
CS
N.C.
BA0
BA1
VSS
DQ7
VSSQ
N.C.
DQ6
VDDQ
VSSQ
N.C.
DQ4
VDDQ
N.C.
N.C.
N.C.
DQ5
VSSQ
DQS
N.C.
VREF
VSS
DM
CK
CK
CKE
N.C.
A12
A11
A9
VDD
N.C.
VDDQ
N.C.
DQ0
VSSQ
VDDQ
N.C.
DQ1
VSSQ
N.C.
N.C.
N.C.
N.C.
VDDQ
N.C.
N.C.
VDD
N.C.
N.C.
WE
CAS
RAS
CS
N.C.
BA0
BA1
VSS
N.C.
VSSQ
N.C.
DQ3
VDDQ
VSSQ
N.C.
DQ2
VDDQ
N.C.
N.C.
N.C.
N.C.
VSSQ
DQS
N.C.
VREF
VSS
DM
CK
CK
CKE
N.C.
A12
A11
A9
A10/AP
A0
A1
A2
A3
VDD
A10/AP
A0
A1
A2
A3
VDD
A8
A7
A6
A5
A4
VSS
A8
A7
A6
A5
A4
VSS
128Mb x 4
64Mb x 8
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
VDDQ
DQ5
DQ6
VSSQ
DQ7
N.C.
DQ3
DQ4
VDDQ
LDQS
N.C.
VDD
N.C.
LDM
WE
CAS
RAS
CS
N.C.
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
32Mb x 16
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
VSSQ
DQ10
DQ9
VDDQ
DQ8
N.C.
DQ12
DQ11
VSSQ
UDQS
N.C.
VREF
VSS
UDM
CK
CK
CKE
N.C.
A12
A11
A9
A8
A7
A6
A5
A4
VSS
Data Sheet 9 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Pin Configuration
Table 3 Input/Output Functional Description
Symbol Type Function
CK, CK Input Clock: CK and CK are differential clock inputs. All address and control input signals
are sampled on the crossing of the positive edge of CK and negative edge of CK.
Output (read) data is referenced to the crossings of CK and CK (both directions of
crossing).
CKE Input Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals
and device input buffers and output drivers. Taking CKE Low provides Precharge
Power-Down and Self Refresh operation (all banks idle), or Active Power-Down (row
Active in any bank). CKE is synchronous for power down entry and exit, and for self
refresh entry. CKE is asynchronous for self refresh exit. CKE must be maintained
high throughout read and write accesses. Input buffers, excluding CK, CK and CKE
are disabled during power-down. Input buffers, excluding CKE, are disabled during
self refresh.
CS Input Chip Select: All commands are masked when CS is registered HIGH. CS provides
for external bank selection on systems with multiple banks. CS is considered part of
the command code. The standard pinout includes one CS pin.
RAS, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being
entered.
DM Input Input Data Mask: DM is an input mask signal for write data. Input data is masked
when DM is sampled HIGH coincident with that input data during a Write access. DM
is sampled on both edges of DQS. Although DM pins are input only, the DM loading
matches the DQ and DQS loading. LDM and UDM are the input mask signals for ×16
components and control the lower or upper bytes. For ×8 components the data mask
function is disabled, when RDQS / RQDS are enabled by EMRS(1) command.
BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an Active, Read, Write or
Precharge command is being applied. BA0 and BA1 also determines if the mode
register or extended mode register is to be accessed during a MRS or EMRS cycle.
A0 - A12 Input Address Inputs: Provide the row address for Active commands, and the column
address and Auto Precharge bit for Read/Write commands, to select one location out
of the memory array in the respective bank. A10 is sampled during a Precharge
command to determine whether the Precharge applies to one bank (A10 LOW) or all
banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0,
BA1. The address inputs also provide the op-code during a Mode Register Set
command.
DQ Input/
Output
Data Input/Output: Data bus.
DQS, (DQS)
LDQS, (LDQS),
UDQS,(UDQS)
Input/
Output
Data Strobe: output with read data, input with write data. Edge aligned with read
data, centered with write data. For the ×16, LDQS corresponds to the data on
LDQ[0:7]; UDQS corresponds to the data on UDQ[0:7]. The data strobes DQS,
LDQS, UDQS may be used in single ended mode or paired with the optional
complementary signals DQS, LDQS, UDQS to provide differential pair signaling to
the system during both reads and writes. An EMRS(1) control bit enables or disables
the complementary data strobe signals.
N.C. No Connect: No internal electrical connection is present.
VDDQ Supply DQ Power Supply: 2.5 V ± 0.2 V.
VSSQ Supply DQ Ground
VDD Supply Power Supply: 2.5 V ± 0.2 V.
VSS Supply Ground
VREF Supply SSTL_2 Reference Voltage: (VDDQ /2)
HYB25D512[16/40/80]0AT–[6/7/7F]
Pin Configuration
Data Sheet 10 Rev. 1.0, 2004-03
Figure 2 Block Diagram 128 Mbit × 4
Note:
1. This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does
not represent an actual circuit implementation.
2. DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidirectional DQ and
DQS signals.
SPB04304
Control Logic
Row-Address MUX
8192
Bank0
Row-Address Latch
& Decoder Bank Control Logic
Column
Decoder
Column
Decoder
Column
Decoder
I/O Gating
DM Mask Logic
16384
Sense Amplifier
Bank0
Memory
Array
(8192 x 2048 x 8)
Bank1
2048 (x8)
Refresh Counter
13
2
Column
Decoder
2
Column-Address
Counter/Latch
11
1COL0
Address Register
12
13
15
Mode
Registers
Command
Decode
RAS
CAS
WE
CS
CK
CK
CKE
A0 - A12,
BA0, BA1
8
1
1
4
4
1
4
1
1
4
4
2
8
Data
Mask
Write
FIFO
&
Drivers
8
COL0
CK, CK
Receivers
Input
Register
MUX
COL0
DQS
Generator
Drivers
4
1
Data
DQS
4
4
Read Latch
8
1
DLL
CK, CK
DQS
DQ0-
DQ3,
DM
15
13
Bank2 Bank3
Data Sheet 11 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Pin Configuration
Figure 3 Block Diagram 64 Mbit × 8
Note:
1. This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does
not represent an actual circuit implementation.
2. DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidirectional DQ and
DQS signals.
SPB04305
Control Logic
Row-Address MUX
8192
Bank0
Row-Address Latch
& Decoder Bank Control Logic
Column
Decoder
Column
Decoder
Column
Decoder
I/O Gating
DM Mask Logic
16384
Sense Amplifier
Bank0
Memory
Array
(8192 x 1024 x 16)
Bank1
1024 (x16)
Refresh Counter
13
2
Column
Decoder
2
Column-Address
Counter/Latch
10
1COL0
Address Register
11
13
15
Mode
Registers
Command
Decode
RAS
CAS
WE
CS
CK
CK
CKE
A0 - A12,
BA0, BA1
16
1
1
8
8
1
8
1
1
8
8
2
16
Data
Mask
Write
FIFO
&
Drivers
16
COL0
CK, CK
Receivers
Input
Register
MUX
COL0
DQS
Generator
Drivers
8
1
Data
DQS
8
8
Read Latch
16
1
DLL
CK, CK
DQS
DQ0-
DQ7,
DM
15
13
Bank2 Bank3
HYB25D512[16/40/80]0AT–[6/7/7F]
Pin Configuration
Data Sheet 12 Rev. 1.0, 2004-03
Figure 4 Block Diagram 32 Mbit × 16
Note:
1. This Functional Block Diagram is intended to facilitate user understanding of the operation of the device; it does
not represent an actual circuit implementation.
2. UDM and LDM are unidirectional signals (input only), but is internally loaded to match the load of the
bidirectional DQ, UDQS and LDQS signals.
SPB04306
Control Logic
Row-Address MUX
8192
Bank0
Row-Address Latch
& Decoder Bank Control Logic
Column
Decoder
Column
Decoder
Column
Decoder
I/O Gating
DM Mask Logic
16384
Sense Amplifier
Bank0
Memory
Array
(8192 x 512 x 32)
Bank1
512 (x32)
Refresh Counter
13
2
Column
Decoder
2
Column-Address
Counter/Latch
9
1COL0
Address Register
10
13
15
Mode
Registers
Command
Decode
RAS
CAS
WE
CS
CK
CK
CKE
A0 - A12,
BA0, BA1
32
1
1
16
16
2
16
1
1
16
16
2
32
Data
Mask
Write
FIFO
&
Drivers
32
COL0
CK, CK
Receivers
Input
Register
MUX
COL0
DQS
Generator
Drivers
16
1
Data
DQS
16
16
Read Latch
32
2
DLL
CK, CK
LDQS,
UDQS
DQ0-
DQ15,
LDM,
UDM
15
13
Bank2 Bank3
Data Sheet 13 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
3 Functional Description
The 512Mbit Double Data Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing
536,870,912 bits. The 512Mbit Double Data Rate SDRAM is internally configured as a quad-bank DRAM.
The 512Mbit Double Data Rate SDRAM uses a double-data-rate architecture to achieve high-speed operation.
The double-data-rate architecture is essentially a 2n prefetch architecture, with an interface designed to transfer
two data words per clock cycle at the I/O pins. A single read or write access for the 512Mbit Double Data Rate
SDRAM consists of a single 2n-bit wide, one clock cycle data transfer at the internal DRAM core and two
corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.
Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and
continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration
of an Active command, which is then followed by a Read or Write command. The address bits registered
coincident with the Active command are used to select the bank and row to be accessed (BA0, BA1 select the
bank; A0-A12 select the row). The address bits registered coincident with the Read or Write command are used
to select the starting column location for the burst access.
Prior to normal operation, the DDR SDRAM must be initialized. The following sections provide detailed information
covering device initialization, register definition, command descriptions and device operation.
3.1 Initialization
DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than
those specified may result in undefined operation. The following criteria must be met:
No power sequencing is specified during power up or power down given the following criteria:
VDD and VDDQ are driven from a single power converter output
VTT meets the specification
A minimum resistance of 42 limits the input current from the VTT supply into any pin and VREF tracks VDDQ/2
or the following relationship must be followed:
VDDQ is driven after or with VDD such that VDDQ < VDD + 0.3 V
VTT is driven after or with VDDQ such that VTT < VDDQ + 0.3 V
VREF is driven after or with VDDQ such that VREF < VDDQ + 0.3 V
The DQ and DQS outputs are in the High-Z state, where they remain until driven in normal operation (by a read
access). After all power supply and reference voltages are stable, and the clock is stable, the DDR SDRAM
requires a 200 µs delay prior to applying an executable command.
Once the 200 µs delay has been satisfied, a Deselect or NOP command should be applied, and CKE should be
brought HIGH. Following the NOP command, a Precharge ALL command should be applied. Next a Mode
Register Set command should be issued for the Extended Mode Register, to enable the DLL, then a Mode
Register Set command should be issued for the Mode Register, to reset the DLL, and to program the operating
parameters. 200 clock cycles are required between the DLL reset and any executable command. During the
200 cycles of clock for DLL locking, a Deselect or NOP command must be applied. After the 200 clock cycles, a
Precharge ALL command should be applied, placing the device in the “all banks idle” state.
Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a Mode Register Set
command for the Mode Register, with the reset DLL bit deactivated (i.e. to program operating parameters without
resetting the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation.
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 14 Rev. 1.0, 2004-03
3.2 Mode Register Definition
The Mode Register is used to define the specific mode of operation of the DDR SDRAM. This definition includes
the selection of a burst length, a burst type, a CAS latency, and an operating mode. The Mode Register is
programmed via the Mode Register Set command (with BA0 = 0 and BA1 = 0) and retains the stored information
until it is programmed again or the device loses power (except for bit A8, which is self-clearing).
Mode Register bits A0-A2 specify the burst length, A3 specifies the type of burst (sequential or interleaved), A4-
A6 specify the CAS latency, and A7-A12 specify the operating mode.
The Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before
initiating the subsequent operation. Violating either of these requirements results in unspecified operation.
3.2.1 Burst Length
Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The
burst length determines the maximum number of column locations that can be accessed for a given Read or Write
command. Burst lengths of 2, 4, or 8 locations are available for both the sequential and the interleaved burst types.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
MR
Mode Register Definition (BA[1:0] = 00B)
BA1BA0A12A11A10A9A8A7A6A5A4A3A2A1A0
0 0 MODE CL BT BL
reg. addr w w w w
Field Bits Type Description
BL [2:0] w1)
1) w = write only register bit
Burst Length
Number of sequential bits per DQ related to one read/write command; see Chapter 3.2.1.
Note: All other bit combinations are RESERVED.
001 2
010 4
011 8
BT 3w
1) Burst Type
See Table 4 for internal address sequence of low order address bits; see Chapter 3.2.2.
0 Sequential
1 Interleaved
CL [6:4] w1) CAS Latency
Number of full clocks from read command to first data valid window; see Chapter 3.2.3.
Note: All other bit combinations are RESERVED.
010 2
011 3
101 (1.5 Optional, not covered by this data sheet)
110 2.5
MODE [12:7] w1) Operating Mode
See Chapter 3.2.4.
Note: All other bit combinations are RESERVED.
000000 Normal Operation
000010 DLL Reset
Data Sheet 15 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is
reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2-Ai when the burst
length is set to four and by A3-Ai when the burst length is set to eight (where Ai is the most significant column
address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the
starting location within the block. The programmed burst length applies to both Read and Write bursts.
3.2.2 Burst Type
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in Table 4.
Notes
1. For a burst length of two, A1-Ai selects the two-data-element block; A0 selects the first access within the block.
2. For a burst length of four, A2-Ai selects the four-data-element block; A0-A1 selects the first access within the
block.
3. For a burst length of eight, A3-Ai selects the eight-data- element block; A0-A2 selects the first access within
the block.
4. Whenever a boundary of the block is reached within a given sequence above, the following access wraps
within the block.
3.2.3 Read Latency
The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a Read command and
the availability of the first burst of output data. The latency can be programmed 2, 2.5 and 3 clocks. CAS latency
of 1.5 is an optional feature on this device.
If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally
coincident with clock edge n + m.(see Figure 5)
Reserved states should not be used as unknown operation or incompatibility with future versions may result.
Table 4 Burst Definition
Burst
Length
Starting Column Address Order of Accesses Within a Burst
A2 A1 A0 Type = Sequential Type = Interleaved
200-10-1
11-0 1-0
4 0 0 0-1-2-3 0-1-2-3
0 1 1-2-3-0 1-0-3-2
1 0 2-3-0-1 2-3-0-1
1 1 3-0-1-2 3-2-1-0
8 0000-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7
0011-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6
0102-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5
0113-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4
1004-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3
1015-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2
1106-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1
1117-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 16 Rev. 1.0, 2004-03
3.2.4 Operating Mode
The normal operating mode is selected by issuing a Mode Register Set Command with bits A7-A12 set to zero,
and bits A0-A6 set to the desired values. A DLL reset is initiated by issuing a Mode Register Set command with
bits A7 and A9-A12 each set to zero, bit A8 set to one, and bits A0-A6 set to the desired values. A Mode Register
Set command issued to reset the DLL should always be followed by a Mode Register Set command to select
normal operating mode (i.e., with A8=0).
All other combinations of values for A7-A12 are reserved for future use and/or test modes. Test modes and
reserved states should not be used as unknown operation or incompatibility with future versions may result.
Figure 5 Required CAS Latencies
NOP NOP NOP NOP NOPRead
CAS Latency = 2, BL = 4
Shown with nominal tAC, tDQSCK, and tDQSQ.
CK
CK
Command
DQS
DQ
Don’t Care
CL=2
NOP NOP NOP NOP NOPRead
CAS Latency = 2.5, BL = 4
CK
CK
Command
DQS
DQ
CL=2.5
Data Sheet 17 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
3.3 Extended Mode Register
The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional
functions include DLL enable/disable, and output drive strength selection (optional). These functions are controlled
via the bits shown in the Extended Mode Register Definition. The Extended Mode Register is programmed via the
Mode Register Set command (with BA0 = 1 and BA1 = 0) and retains the stored information until it is programmed
again or the device loses power. The Extended Mode Register must be loaded when all banks are idle, and the
controller must wait the specified time before initiating any subsequent operation. Violating either of these
requirements result in unspecified operation.
3.3.1 DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon
returning to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is
automatically disabled when entering self refresh operation and is automatically re-enabled upon exit of self
refresh operation. Any time the DLL is enabled, 200 clock cycles must occur before a Read command can be
issued. This is the reason 200 clock cycles must occur before issuing a Read or Write command upon exit of self
refresh operation.
3.3.2 Output Drive Strength
The normal drive strength for all outputs is specified to be SSTL_2, Class II. In addition this design version
supports a weak driver mode for lighter load and/or point-to-point environments which can be activated during
mode register set. I-V curves for the normal and weak drive strength are included in this document.
EMR
Extended Mode Register Definition (BA[1:0] = 01B)
BA1BA0A12A11A10A9A8A7A6A5A4A3A2A1A0
0 1 OPERATING MODE DS DLL
reg. addr w w w
Field Bits Type Description
DLL 0wDLL Status
See Chapter 3.3.1.
0 Enabled
1 Disabled
DS 1wDrive Strength
See Chapter 3.3.2, Chapter 4.2 and Chapter 4.3.
0Normal
1Weak
MODE [12:2] w Operating Mode
Note: All other bit combinations are RESERVED.
00000000000 Normal Operation
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 18 Rev. 1.0, 2004-03
3.4 Commands
Deselect
The Deselect function prevents new commands from being executed by the DDR SDRAM. The DDR SDRAM is
effectively deselected. Operations already in progress are not affected.
No Operation (NOP)
The No Operation (NOP) command is used to perform a NOP to a DDR SDRAM. This prevents unwanted
commands from being registered during idle or wait states. Operations already in progress are not affected.
Mode Register Set
The mode registers are loaded via inputs A0-A12, BA0 and BA1. See mode register descriptions in Chapter 3.2.
The Mode Register Set command can only be issued when all banks are idle and no bursts are in progress. A
subsequent executable command cannot be issued until tMRD is met.
Active
The Active command is used to open (or activate) a row in a particular bank for a subsequent access. The value
on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0-A12 selects the row. This row
remains active (or open) for accesses until a Precharge (or Read or Write with Auto Precharge) is issued to that
bank. A Precharge (or Read or Write with Auto Precharge) command must be issued and completed before
opening a different row in the same bank.
Read
The Read command is used to initiate a burst read access to an active (open) row. The value on the BA0, BA1
inputs selects the bank, and the address provided on inputs A0-Ai, Aj (where [i = 8, j = don’t care] for x16, [i = 9,
j = don’t care] for x8 and [i = 9, j = 11] for x4) selects the starting column location. The value on input A10
determines whether or not Auto Precharge is used. If Auto Precharge is selected, the row being accessed is
precharged at the end of the Read burst; if Auto Precharge is not selected, the row remains open for subsequent
accesses.
Write
The Write command is used to initiate a burst write access to an active (open) row. The value on the BA0, BA1
inputs selects the bank, and the address provided on inputs A0-Ai, Aj (where [i = 9, j = don’t care] for x8; where
[i = 9, j = 11] for x4) selects the starting column location. The value on input A10 determines whether or not Auto
Precharge is used. If Auto Precharge is selected, the row being accessed is precharged at the end of the Write
burst; if Auto Precharge is not selected, the row remains open for subsequent accesses. Input data appearing on
the DQs is written to the memory array subject to the DM input logic level appearing coincident with the data. If a
given DM signal is registered low, the corresponding data is written to memory; if the DM signal is registered high,
the corresponding data inputs are ignored, and a Write is not executed to that byte/column location.
Precharge
The Precharge command is used to deactivate (close) the open row in a particular bank or the open row(s) in all
banks. The bank(s) will be available for a subsequent row access a specified time (tRP) after the Precharge
command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where
only one bank is to be precharged, inputs BA0, BA1 select the bank. Otherwise BA0, BA1 are treated as “Don’t
Care”. Once a bank has been precharged, it is in the idle state and must be activated prior to any Read or Write
commands being issued to that bank. A precharge command is treated as a NOP if there is no open row in that
bank, or if the previously open row is already in the process of precharging.
Data Sheet 19 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Auto Precharge
Auto Precharge is a feature which performs the same individual-bank precharge functions described above, but
without requiring an explicit command. This is accomplished by using A10 to enable Auto Precharge in conjunction
with a specific Read or Write command. A precharge of the bank/row that is addressed with the Read or Write
command is automatically performed upon completion of the Read or Write burst. Auto Precharge is nonpersistent
in that it is either enabled or disabled for each individual Read or Write command. Auto Precharge ensures that
the precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to
the same bank until the precharge (tRP) is completed. This is determined as if an explicit Precharge command was
issued at the earliest possible time, as described for each burst type in Chapter 3.5.
Burst Terminate
The Burst Terminate command is used to truncate read bursts (with Auto Precharge disabled). The most recently
registered Read command prior to the Burst Terminate command is truncated, as shown in Chapter 3.5.
Auto Refresh
Auto Refresh is used during normal operation of the DDR SDRAM and is analogous to CAS Before RAS (CBR)
Refresh in previous DRAM types. This command is nonpersistent, so it must be issued each time a refresh is
required.
The refresh addressing is generated by the internal refresh controller. This makes the address bits “Don’t Care”
during an Auto Refresh command. The 512Mbit Double Data Rate SDRAM requires Auto Refresh cycles at an
average periodic interval of 7.8 µs (maximum).
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh
interval is provided. A maximum of eight Auto Refresh commands can be posted in the system, meaning that the
maximum absolute interval between any Auto Refresh command and the next Auto Refresh command is
9×7.8 µs (70.2 µs). This maximum absolute interval is short enough to allow for DLL updates internal to the DDR
SDRAM to be restricted to Auto Refresh cycles, without allowing too much drift in tAC between updates.
Self Refresh
The Self Refresh command can be used to retain data in the DDR SDRAM, even if the rest of the system is
powered down. When in the self refresh mode, the DDR SDRAM retains data without external clocking. The Self
Refresh command is initiated as an Auto Refresh command coincident with CKE transitioning low. The DLL is
automatically disabled upon entering Self Refresh, and is automatically enabled upon exiting Self Refresh
(200 clock cycles must then occur before a Read command can be issued). Input signals except CKE (low) are
“Don’t Care” during Self Refresh operation.
The procedure for exiting self refresh requires a sequence of commands. CK (and CK) must be stable prior to CKE
returning high. Once CKE is high, the SDRAM must have NOP commands issued for tXSNR because time is
required for the completion of any internal refresh in progress. A simple algorithm for meeting both refresh and
DLL requirements is to apply NOPs for 200 clock cycles before applying any other command.
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 20 Rev. 1.0, 2004-03
Table 5 Truth Table 1a: Commands
Name (Function) CS RAS CAS WE Address MNE Notes
Deselect (NOP) H X X X X NOP 1)2)
No Operation (NOP) L H H H X NOP 1)2)
Active (Select Bank And Activate Row) L L H H Bank/Row ACT 1)3)
Read (Select Bank And Column, And Start Read Burst) L H L H Bank/Col Read 1)4)
Write (Select Bank And Column, And Start Write Burst) L H L L Bank/Col Write 1)4)
Burst Terminate LHHLX BST1)5)
Precharge (Deactivate Row In Bank Or Banks) L L H L Code PRE 1)6)
Auto Refresh Or Self Refresh (Enter Self Refresh Mode) L L L H X AR/SR 1)7)8)
Mode Register Set L L L L Op-Code MRS 1)9)
1) CKE is HIGH for all commands shown except Self Refresh.
2) Deselect and NOP are functionally interchangeable.
3) BA0-BA1 provide bank address and A0-A12 provide row address.
4) BA0, BA1 provide bank address; A0-Ai provide column address (where i = 8 for x16, i = 9 for x8 and 9, 11 for x4);
A10 HIGH enables the Auto Precharge feature (nonpersistent), A10 LOW disables the Auto Precharge feature.
5) Applies only to read bursts with Auto Precharge disabled; this command is undefined (and should not be used) for read
bursts with Auto Precharge enabled or for write bursts.
6) A10 LOW: BA0, BA1 determine which bank is precharged.
A10 HIGH: all banks are precharged and BA0, BA1 are “Don’t Care”.
7) This command is AUTO REFRESH if CKE is HIGH; Self Refresh if CKE is LOW.
8) Internal refresh counter controls row and bank addressing; all inputs and I/Os are “Don’t Care” except for CKE.
9) BA0, BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 = 1,
BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A12 provide the op-code to
be written to the selected Mode Register).
Table 6 Truth Table 1b: DM Operation
Name (Function) DM DQs Notes
Write Enable LValid
1)
1) Used to mask write data; provided coincident with the corresponding data.
Write Inhibit HX1)
Data Sheet 21 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
3.5 Operations
3.5.1 Bank/Row Activation
Before any Read or Write commands can be issued to a bank within the DDR SDRAM, a row in that bank must
be “opened” (activated). This is accomplished via the Active command and addresses A0-A12, BA0 and BA1 (see
Figure 6), which decode and select both the bank and the row to be activated. After opening a row (issuing an
Active command), a Read or Write command may be issued to that row, subject to the tRCD specification. A
subsequent Active command to a different row in the same bank can only be issued after the previous active row
has been “closed” (precharged). The minimum time interval between successive Active commands to the same
bank is defined by tRC. A subsequent Active command to another bank can be issued while the first bank is being
accessed, which results in a reduction of total row-access overhead. The minimum time interval between
successive Active commands to different banks is defined by tRRD.
Figure 6 Activating a Specific Row in a Specific Bank
Figure 7 tRCD and tRRD Definition
RA
BA
HIGH
RA = row address.
BA = bank address.
CK
CK
CKE
CS
RAS
CAS
WE
A0-A12
BA0, BA1 Don’t Care
ROW
ACT NOP
COLROW
BA y BA yBA x
ACT NOP NOP
CK
CK
Command
A0-A12
BA0, BA1
Don’t Care
RD/WR
tRCD
tRRD
RD/WR NOP NOP
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 22 Rev. 1.0, 2004-03
3.5.2 Reads
Subsequent to programming the mode register with CAS latency, burst type, and burst length, Read bursts are
initiated with a Read command, as shown on Figure 8.
The starting column and bank addresses are provided with the Read command and Auto Precharge is either
enabled or disabled for that burst access. If Auto Precharge is enabled, the row that is accessed starts precharge
at the completion of the burst, provided tRAS has been satisfied. For the generic Read commands used in the
following illustrations, Auto Precharge is disabled.
During Read bursts, the valid data-out element from the starting column address is available following the CAS
latency after the Read command. Each subsequent data-out element is valid nominally at the next positive or
negative clock edge (i.e. at the next crossing of CK and CK). Figure 9 shows general timing for each supported
CAS latency setting. DQS is driven by the DDR SDRAM along with output data. The initial low state on DQS is
known as the read preamble; the low state coincident with the last data-out element is known as the read
postamble. Upon completion of a burst, assuming no other commands have been initiated, the DQs goes High-Z.
Data from any Read burst may be concatenated with or truncated with data from a subsequent Read command.
In either case, a continuous flow of data can be maintained. The first data element from the new burst follows either
the last element of a completed burst or the last desired data element of a longer burst which is being truncated.
The new Read command should be issued x cycles after the first Read command, where x equals the number of
desired data element pairs (pairs are required by the 2n prefetch architecture). This is shown on Figure 10. A
Read command can be initiated on any clock cycle following a previous Read command. Nonconsecutive Read
data is illustrated on Figure 11. Full-speed Random Read Accesses: CAS Latencies (Burst Length = 2, 4 or 8)
within a page (or pages) can be performed as shown on Figure 12.
Figure 8 Read Command
BA
HIGH
CA = column address
BA = bank address
CKE
CS
RAS
CAS
WE
A10
BA0, BA1
Don’t Care
CA
x4: A0-A9, A11
x8: A0-A9
EN AP
DIS AP
EN AP = enable Auto Precharge
DIS AP = disable Auto Precharge
CK
CK
x16: A0-A8
Data Sheet 23 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Figure 9 Read Burst: CAS Latencies (Burst Length = 4)
CAS Latency = 2
NOP NOP NOP NOP NOPRead
CK
CK
Command
Address
DQS
DQ
CAS Latency = 2.5
Don’t Care
BA a,COL n
DOa-n
CL=2.5
NOP NOP NOP NOP NOPRead
CK
CK
Command
Address
DQS
DQ
BA a,COL n
DOa-n
DO a-n = data out from bank a, column n.
3 subsequent elements of data out appear in the programmed order following DO a-n.
Shown with nominal tAC, tDQSCK, and tDQSQ.
CL=2
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 24 Rev. 1.0, 2004-03
Figure 10 Consecutive Read Bursts: CAS Latencies (Burst Length = 4 or 8)
CAS Latency = 2
NOP Read NOP NOP NOPRead
CK
CK
Command
Address
DQS
DQ
CL=2
BAa, COL n BAa, COL b
Don’t Care
DO a-n (or a-b) = data out from bank a, column n (or bank a, column b).
When burst length = 4, the bursts are concatenated.
When burst length = 8, the second burst interrupts the first.
3 subsequent elements of data out appear in the programmed order following DO a-n.
3 (or 7) subsequent elements of data out appear in the programmed order following DO a-b.
Shown with nominal tAC, tDQSCK, and tDQSQ.
CAS Latency = 2.5
NOP Read NOP NOP NOPRead
CK
CK
Command
Address
DQS
DQ
CL=2.5
BAa, COL n BAa,COL b
DOa-n
DOa- n DOa- b
DOa-b
Data Sheet 25 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Figure 11 Non-Consecutive Read Bursts: CAS Latencies (Burst Length = 4)
CAS Latency = 2
NOP NOP Read NOP NOPRead
CK
CK
Command
Address
DQS
DQ DO a-n DOa- b
DO a-n (or a-b) = data out from bank a, column n (or bank a, column b).
3 subsequent elements of data out appear in the programmed order following DO a-n (and following DO a-b).
Shown with nominal tAC, tDQSCK, and tDQSQ.Don’t Care
BAa, COL n BAa, COL b
CL=2
CAS Latency = 2.5
NOP NOP Read NOP NOPRead
DO a-n DOa- b
BAa, COL n BAa, COL b
CL=2.5
CK
CK
Command
Address
DQS
DQ
NOP
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 26 Rev. 1.0, 2004-03
Figure 12 Random Read Accesses: CAS Latencies (Burst Length = 2, 4 or 8)
Data from any Read burst may be truncated with a Burst Terminate command, as shown on Figure 13. The Burst
Terminate latency is equal to the read (CAS) latency, i.e. the Burst Terminate command should be issued x cycles
after the Read command, where x equals the number of desired data element pairs.
Data from any Read burst must be completed or truncated before a subsequent Write command can be issued. If
truncation is necessary, the Burst Terminate command must be used, as shown on Figure 14. The example is
shown for tDQSS(min). The tDQSS(max) case, not shown here, has a longer bus idle time. tDQSS(min) and tDQSS(max) are
defined in Chapter 3.5.3.
A Read burst may be followed by, or truncated with, a Precharge command to the same bank (provided that Auto
Precharge was not activated). The Precharge command should be issued x cycles after the Read command,
where x equals the number of desired data element pairs (pairs are required by the 2n prefetch architecture). This
is shown on Figure 15 for Read latencies of 2 and 2.5. Following the Precharge command, a subsequent
command to the same bank cannot be issued until tRP is met. Note that part of the row precharge time is hidden
during the access of the last data elements.
DOa-n
CAS Latency = 2
Read Read Read NOP NOPRead
DOa-bDOa-n’ DOa-x DOa-x’ DOa-b’ DOa-g
CK
CK
Command
Address
DQS
DQ
DO a-n, etc. = data out from bank a, column n etc.
n' etc. = odd or even complement of n, etc. (i.e., column address LSB inverted).
Reads are to active rows in any banks.
Shown with nominal tAC, tDQSCK, and tDQSQ.
Don’t Care
BAa, COL n BAa, COL x BAa, COL b BAa, COL g
CL=2
CAS Latency = 2.5
Read Read Read NOP NOPRead
CK
CK
Command
Address
DQS
DQ
BAa, COL n BAa, COL x BAa, COL b BAa, COL g
CL=2.5
DOa-n DOa-bDOa-n’ DOa-x DOa-x’ DOa-b’
Data Sheet 27 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
In the case of a Read being executed to completion, a Precharge command issued at the optimum time (as
described above) provides the same operation that would result from the same Read burst with Auto Precharge
enabled. The disadvantage of the Precharge command is that it requires that the command and address busses
be available at the appropriate time to issue the command. The advantage of the Precharge command is that it
can be used to truncate bursts.
Figure 13 Terminating a Read Burst: CAS Latencies (Burst Length = 8)
CAS Latency = 2
NOP BST NOP NOP NOPRead
CK
Command
Address
DQS
DQ
DO a-n = data out from bank a, column n.
Cases shown are bursts of 8 terminated after 4 data elements.
3 subsequent elements of data out appear in the programmed order following DO a-n.
Shown with nominal tAC, tDQSCK, and tDQSQ.
DOa-n
Don’t Care
CK
BAa, COL n
CL=2
CAS Latency = 2.5
NOP BST NOP NOP NOPRead
CK
Command
Address
DQS
DQ DOa-n
CK
BAa, COL n
CL=2.5
No further output data after this point.
DQS tristated.
No further output data after this point.
DQS tristated.
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 28 Rev. 1.0, 2004-03
Figure 14 Read to Write: CAS Latencies (Burst Length = 4 or 8)
CAS Latency = 2
BST NOP Write NOP NOPRead
DI a-b
CK
CK
Command
Address
DQS
DQ
DM
DOa-n
DO a-n = data out from bank a, column n
1 subsequent elements of data out appear in the programmed order following DO a-n.
Data In elements are applied following Dl a-b in the programmed order, according to burst length.
Don’t Care
BAa, COL n BAa, COL b
CL=2 tDQSS (min)
CAS Latency = 2.5
BST NOP NOP Write NOPRead
CK
CK
Command
Address
DQS
DQ
DM
DOa-n
BAa, COL n BAa, COL b
CL=2.5 tDQSS (min)
Dla-b
Shown with nominal tAC, tDQSCK, and tDQSQ.
.
DI a-b = data in to bank a, column b
Data Sheet 29 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Figure 15 Read to Precharge: CAS Latencies (Burst Length = 4 or 8)
CAS Latency = 2
NOP PRE NOP NOP ACTRead
CK
CK
Command
Address
DQS
DQ DOa-n
DO a-n = data out from bank a, column n.
Cases shown are either uninterrupted bursts of 4 or interrupted bursts of 8.
3 subsequent elements of data out appear in the programmed order following DO a-n.
Shown with nominal tAC, tDQSCK, and tDQSQ.Don’t Care
BA a, COL n BA a or all BA a, ROW
CL=2.5
CAS Latency = 2.5
NOP PRE NOP NOP ACTRead
CK
CK
Command
Address
DQS
DQ DOa-n
tRP
BA a, COL n BA a or all BA a, ROW
CL=2
tRP
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 30 Rev. 1.0, 2004-03
3.5.3 Writes
Write bursts are initiated with a Write command, as shown in Figure 16.
The starting column and bank addresses are provided with the Write command, and Auto Precharge is either
enabled or disabled for that access. If Auto Precharge is enabled, the row being accessed is precharged at the
completion of the burst. For the generic Write commands used in the following illustrations, Auto Precharge is
disabled.
During Write bursts, the first valid data-in element is registered on the first rising edge of DQS following the write
command, and subsequent data elements are registered on successive edges of DQS. The Low state on DQS
between the Write command and the first rising edge is known as the write preamble; the Low state on DQS
following the last data-in element is known as the write postamble. The time between the Write command and the
first corresponding rising edge of DQS (tDQSS) is specified with a relatively wide range (from 75% to 125% of one
clock cycle), so most of the Write diagrams that follow are drawn for the two extreme cases (i.e. tDQSS(min) and
tDQSS(max)). Figure 17 shows the two extremes of tDQSS for a burst of four. Upon completion of a burst, assuming
no other commands have been initiated, the DQs and DQS enters High-Z and any additional input data is ignored.
Data for any Write burst may be concatenated with or truncated with a subsequent Write command. In either case,
a continuous flow of input data can be maintained. The new Write command can be issued on any positive edge
of clock following the previous Write command. The first data element from the new burst is applied after either
the last element of a completed burst or the last desired data element of a longer burst which is being truncated.
The new Write command should be issued x cycles after the first Write command, where x equals the number of
desired data element pairs (pairs are required by the 2n prefetch architecture). Figure 18 shows concatenated
bursts of 4. An example of non-consecutive Writes is shown in Figure 19. Full-speed random write accesses
within a page or pages can be performed as shown in Figure 20. Data for any Write burst may be followed by a
subsequent Read command. To follow a Write without truncating the write burst, tWTR (Write to Read) should be
met as shown in Figure 21.
Data for any Write burst may be truncated by a subsequent Read command, as shown in Figure 22 to Figure 24.
Note that only the data-in pairs that are registered prior to the tWTR period are written to the internal array, and any
subsequent data-in must be masked with DM, as shown in the diagrams noted previously.
Data for any Write burst may be followed by a subsequent Precharge command. To follow a Write without
truncating the write burst, tWR should be met as shown in Figure 25.
Data for any Write burst may be truncated by a subsequent Precharge command, as shown in Figure 26 to
Figure 28. Note that only the data-in pairs that are registered prior to the tWR period are written to the internal array,
and any subsequent data in should be masked with DM. Following the Precharge command, a subsequent
command to the same bank cannot be issued until tRP is met.
In the case of a Write burst being executed to completion, a Precharge command issued at the optimum time (as
described above) provides the same operation that would result from the same burst with Auto Precharge. The
disadvantage of the Precharge command is that it requires that the command and address busses be available at
the appropriate time to issue the command. The advantage of the Precharge command is that it can be used to
truncate bursts.
Data Sheet 31 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Figure 16 Write Command
BA
HIGH
CA = column address
BA = bank address
CKE
CS
RAS
CAS
WE
A10
BA0, BA1
Don’t Care
CA
x4: A0-A9, A11
x8: A0-A9
x16: A0-A8
EN AP
DIS AP
EN AP = enable Auto Precharge
DIS AP = disable Auto Precharge
CK
CK
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 32 Rev. 1.0, 2004-03
Figure 17 Write Burst (Burst Length = 4)
T1 T2 T3 T4
tDQSS (max)
NOP NOP NOPWrite
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
A10 is Low with the Write command (Auto Precharge is disabled).
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
Maximum DQSS
BA a, COL b
T1 T2 T3 T4
tDQSS (min)
NOP NOP NOPWrite
CK
CK
Command
Address
DQS
Minimum DQSS
BA a, COL b
DQ
DM
Dla-b
Dla-b
Data Sheet 33 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Figure 18 Write to Write (Burst Length = 4)
T1 T2 T3 T4 T5 T6
tDQSS (max)
Maximum DQSS
NOP Write NOP NOP NOPWrite
DI a-b = data in for bank a, column b, etc.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
3 subsequent elements of data in are applied in the programmed order following DI a-n.
A non-interrupted burst is shown.
Each Write command may be to any bank.
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
T1 T2 T3 T4 T5 T6
Minimum DQSS
NOP Write NOP NOP NOPWrite
CK
CK
Command
Address
DQS
DQ
DM
BAa, COL b BAa, COL n
BA, COL b BA, COL n
tDQSS (min)
DI a-b DI a-n
DI a-b DI a-n
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 34 Rev. 1.0, 2004-03
Figure 19 Write to Write: Max. DQSS, Non-Consecutive (Burst Length = 4)
T1 T2 T3 T4 T5
tDQSS (max)
NOP NOP Write NOPWrite
DI a-b, etc. = data in for bank a, column b, etc.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
3 subsequent elements of data in are applied in the programmed order following DI a-n.
A non-interrupted burst is shown.
Each Write command may be to any bank.
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
BAa, COL b BAa, COL n
DI a-b DI a-n
Data Sheet 35 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Figure 20 Random Write Cycles (Burst Length = 2, 4 or 8)
T1 T2 T3 T4 T5
tDQSS (max)
Maximum DQSS
Write Write Write Write
Write
DI a-b DI a-n
DI a-b, etc. = data in for bank a, column b, etc.
b', etc. = odd or even complement of b, etc. (i.e., column address LSB inverted).
Each Write command may be to any bank.
DI a-b’ DI a-x DI a-x’ DI a-n’ DI a-a DI a-a’
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
BAa, COL b BAa, COL x BAa, COL n BAa, COL a BAa, COL g
T1 T2 T3 T4 T5
Minimum DQSS
Write Write Write Write
Write
DI a-b DI a-nDI a-b’ DI a-x DI a-x’ DI a-n’ DI a-a DI a-a’
CK
CK
Command
Address
DQS
DQ
DM
BAa, COL b BAa, COL x BAa, COL n BAa, COL a BAa, COL g
tDQSS (min)
DI a-g
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 36 Rev. 1.0, 2004-03
Figure 21 Write to Read: Non-Interrupting (CAS Latency = 2; Burst Length = 4)
CL = 2
T1 T2 T3 T4 T5 T6
tWTR
NOP NOP NOP ReadWrite
DI a-b
NOP
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
tWTR is referenced from the first positive CK edge after the last data in pair.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands may be to any bank.
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
Maximum DQSS
BAa, COL b BAa, COL n
T1 T2 T3 T4 T5 T6
tWTR
NOP NOP NOP ReadWrite NOP
CK
CK
Command
Address
Minimum DQSS
BAa, COL b BAa, COL n
tDQSS (max)
DI a-b
DQS
DQ
DM
tDQSS (min)
CL = 2
Data Sheet 37 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Figure 22 Write to Read: Interrupting (CAS Latency = 2; Burst Length = 8)
T1 T2 T3 T4 T5 T6
tDQSS (max)
Maximum DQSS
NOP NOP NOP ReadWrite NOP
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 4 data elements are written.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
tWTR is referenced from the first positive CK edge after the last data in pair.
The Read command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands are not necessarily to the same bank.
DIa- b
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
BAa, COL b BAa, COL n
tWTR
CL = 2
T1 T2 T3 T4 T5 T6
Minimum DQSS
NOP NOP NOP ReadWrite NOP
CK
CK
Command
Address BAa, COL b BAa, COL n
tWTR
DI a-b
DQS
DQ
DM
CL = 2
tDQSS (min)
1 = These bits are incorrectly written into the memory array if DM is low.
11
11
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 38 Rev. 1.0, 2004-03
Figure 23 Write to Read: Minimum DQSS, Odd Number of Data (3-bit Write),
Interrupting (CAS Latency = 2; Burst Length = 8)
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 3 data elements are written.
2 subsequent elements of data in are applied in the programmed order following DI a-b.
tWTR is referenced from the first positive CK edge after the last desired data in pair (not the last desired data in element)
The Read command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands are not necessarily to the same bank.
Don’t Care
T1 T2 T3 T4 T5 T6
NOP NOP NOP ReadWrite NOP
CK
CK
Command
Address BAa, COL b BAa, COL n
tWTR
DI a-b
DQS
DQ
CL = 2
tDQSS (min)
DM 122
1 = This bit is correctly written into the memory array if DM is low.
2 = These bits are incorrectly written into the memory array if DM is low.
Data Sheet 39 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Figure 24 Write to Read: Nominal DQSS, Interrupting (CAS Latency = 2; Burst Length = 8)
T1 T2 T3 T4 T5 T6
tDQSS (nom)
NOP NOP NOP ReadWrite NOP
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 4 data elements are written.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
tWTR is referenced from the first positive CK edge after the last desired data in pair.
The Read command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands are not necessarily to the same bank.
DI a-b
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
BAa, COL b BAa, COL n
tWTR
CL = 2
1 = These bits are incorrectly written into the memory array if DM is low.
11
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 40 Rev. 1.0, 2004-03
Figure 25 Write to Precharge: Non-Interrupting (Burst Length = 4)
T1 T2 T3 T4 T5 T6
tDQSS (max)
NOP NOP NOP NOPWrite
DI a-b
PRE
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
tWR is referenced from the first positive CK edge after the last data in pair.
A10 is Low with the Write command (Auto Precharge is disabled).
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
BA a, COL b BA (a or all)
tWR
Maximum DQSS
T1 T2 T3 T4 T5 T6
NOP NOP NOP NOPWrite PRE
CK
CK
Command
Address BA a, COL b BA (a or all)
tWR
Minimum DQSS
DI a-b
DQS
DQ
DM
tDQSS (min)
tRP
tRP
Data Sheet 41 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Figure 26 Write to Precharge: Interrupting (Burst Length = 4 or 8)
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 2 data elements are written.
1 subsequent element of data in is applied in the programmed order following DI a-b.
tWR is referenced from the first positive CK edge after the last desired data in pair.
The Precharge command masks the last 2 data elements in the burst, for burst length = 8.
A10 is Low with the Write command (Auto Precharge is disabled).
1 = Can be don't care for programmed burst length of 4.
2 = For programmed burst length of 4, DQS becomes don't care at this point. Don’t Care
T1 T2 T3 T4 T5 T6
NOP NOP NOP PREWrite NOP
CK
CK
Command
Address
Maximum DQSS
DI a-b
11
2
DQS
DQ
DM
tDQSS (max) tRP
T1 T2 T3 T4 T5 T6
NOP NOP NOP PREWrite NOP
CK
CK
Command
Address BA a, COL b BA (a or all)
Minimum DQSS
tWR
tRP
DI a-b
11
DQS
DQ
DM
tDQSS (min) 2
BA a, COL b BA (a or all)
tWR
3 = These bits are incorrectly written into the memory array if DM is low.
33
33
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 42 Rev. 1.0, 2004-03
Figure 27 Write to Precharge: Minimum DQSS, Odd Number of Data (1-bit Write), Interrupting (Burst
Length = 4 or 8)
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 1 data element is written.
tWR is referenced from the first positive CK edge after the last desired data in pair.
The Precharge command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
1 = Can be don't care for programmed burst length of 4.
2 = For programmed burst length of 4, DQS becomes don't care at this point.
Don’t Care
T1 T2 T3 T4 T5 T6
NOP NOP NOP PREWrite NOP
CK
CK
Command
Address BA a, COL b BA (a or all)
tWR
tRP
DI a-b
DQS
DQ
tDQSS (min) 2
11
DM 344
3 = This bit is correctly written into the memory array if DM is low.
4 = These bits are incorrectly written into the memory array if DM is low.
Data Sheet 43 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Figure 28 Write to Precharge: Nominal DQSS (2-bit Write), Interrupting (Burst Length = 4 or 8)
DI a-b = Data In for bank a, column b.
An interrupted burst is shown, 2 data elements are written.
1 subsequent element of data in is applied in the programmed order following DI a-b.
tWR is referenced from the first positive CK edge after the last desired data in pair.
The Precharge command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
1 = Can be don't care for programmed burst length of 4.
2 = For programmed burst length of 4, DQS becomes don't care at this point. Don’t Care
T1 T2 T3 T4 T5 T6
NOP NOP NOP PREWrite NOP
CK
CK
Command
Address BA a, COL b BA (a or all)
tRP
tDQSS (nom)
DI a-b
1
2
DQS
DQ
DM 1
tWR
33
3 = These bits are incorrectly written into the memory array if DM is low.
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 44 Rev. 1.0, 2004-03
3.5.4 Precharge
The Precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) will be available for a subsequent row access some specified time (tRP) after the Precharge command is
issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank
is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are
treated as “Don’t Care”. Once a bank has been precharged, it is in the idle state and must be activated prior to any
Read or Write commands being issued to that bank.
Figure 29 Precharge Command
BA
HIGH
BA = bank address
CK
CK
CKE
CS
RAS
CAS
WE
A10
BA0, BA1
Don’t Care
All Banks
One Bank
(if A10 is Low, otherwise Don’t Care).
A0-A9, A11, A12
Data Sheet 45 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
3.5.5 Power-Down
Power-down is entered when CKE is registered LOW (no accesses can be in progress). If power-down occurs
when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a
row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input
and output buffers, excluding CK, CK and CKE. The DLL is still running in Power Down mode, so for maximum
power savings, the user has the option of disabling the DLL prior to entering Power-down. In that case, the DLL
must be enabled after exiting power-down, and 200 clock cycles must occur before a Read command can be
issued. In power-down mode, CKE Low and a stable clock signal must be maintained at the inputs of the DDR
SDRAM, and all other input signals are “Don’t Care”. However, power-down duration is limited by the refresh
requirements of the device, so in most applications, the self refresh mode is preferred over the DLL-disabled
power-down mode.
The power-down state is synchronously exited when CKE is registered HIGH (along with a NOP or Deselect
command). A valid, executable command may be applied one clock cycle later.
Figure 30 Power Down
tIS
tIS
CK
CK
CKE
Command
No column
access in
progress
VALID NOP VALID
Don’t Care
Exit
power down
mode
Enter Power Down mode
(Burst Read or Write operation
must not be in progress)
NOP
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 46 Rev. 1.0, 2004-03
1. CKEn is the logic state of CKE at clock edge n: CKE n-1 was the state of CKE at the previous clock edge.
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.
3. COMMAND n is the command registered at clock edge n, and ACTION n is a result of COMMAND n.
4. All states and sequences not shown are illegal or reserved.
Table 7 Truth Table 2: Clock Enable (CKE)
Current State CKE n-1 CKEn Command n Action n Notes
Previous
Cycle
Current
Cycle
Self Refresh L L X Maintain Self-Refresh
Self Refresh L H Deselect or NOP Exit Self-Refresh 1)
Power Down L L X Maintain Power-Down
Power Down L H Deselect or NOP Exit Power-Down
All Banks Idle H L Deselect or NOP Precharge Power-Down Entry
All Banks Idle H L AUTO REFRESH Self Refresh Entry
Bank(s) Active H L Deselect or NOP Active Power-Down Entry
HHSee Table 8 ––
1) Deselect or NOP commands should be issued on any clock edges occurring during the Self Refresh Exit (tXSNR) period. A
minimum of 200 clock cycles are needed before applying a read command to allow the DLL to lock to the input clock.
Table 8 Truth Table 3: Current State Bank n - Command to Bank n (same bank)
Current State CS RAS CAS WE Command Action Notes
Any H X X X Deselect NOP. Continue previous operation. 1)2)3)4)5)6)
1) This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Table 7 and after tXSNR/tXSRD has been met (if the
previous state was self refresh).
2) This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are
those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.
L H H H No Operation NOP. Continue previous operation. 1) to 6)
Idle L L H H Active Select and activate row 1) to 6)
LLLHAUTO REFRESH 1) to 7)
LLLLMODE
REGISTER SET
1) to 7)
Row Active L H L H Read Select column and start Read burst 1) to 6), 8)
L H L L Write Select column and start Write burst 1) to 6), 8)
L L H L Precharge Deactivate row in bank(s) 1) to 6), 9)
Read (Auto
Precharge
Disabled)
L H L H Read Select column and start new Read
burst
1) to 6), 8)
L L H L Precharge Truncate Read burst, start
Precharge
1) to 6), 9)
L H H L BURST
TERMINATE
BURST TERMINATE 1) to 6), 10)
Write (Auto
Precharge
Disabled)
L H L H Read Select column and start Read burst 1) to 6), 8), 11)
L H L L Write Select column and start Write burst 1) to 6), 8)
L L H L Precharge Truncate Write burst, start Precharge 1) to 6), 9), 11)
Data Sheet 47 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
3) Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register
accesses are in progress.
Read: A Read burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
Write: A Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
4) The following states must not be interrupted by a command issued to the same bank.
Precharging: Starts with registration of a Precharge command and ends when tRP is met. Once tRP is met, the bank is in
the idle state.
Row Activating: Starts with registration of an Active command and ends when tRCD is met. Once tRCD is met, the bank is in
the “row active” state.
Read w/Auto Precharge Enabled: Starts with registration of a Read command with Auto Precharge enabled and ends when
tRP has been met. Once tRP is met, the bank is in the idle state.
Write w/Auto Precharge Enabled: Starts with registration of a Write command with Auto Precharge enabled and ends when
tRP has been met. Once tRP is met, the bank is in the idle state.
Deselect or NOP commands, or allowable commands to the other bank should be issued on any clock edge occurring
during these states. Allowable commands to the other bank are determined by its current state and according to Table 9.
5) The following states must not be interrupted by any executable command; Deselect or NOP commands must be applied
on each positive clock edge during these states.
Refreshing: Starts with registration of an Auto Refresh command and ends when tRFC is met. Once tRFC is met, the DDR
SDRAM is in the “all banks idle” state.
Accessing Mode Register: Starts with registration of a Mode Register Set command and ends when tMRD has been met.
Once tMRD is met, the DDR SDRAM is in the “all banks idle” state.
Precharging All: Starts with registration of a Precharge All command and ends when tRP is met. Once tRP is met, all banks
is in the idle state.
6) All states and sequences not shown are illegal or reserved.
7) Not bank-specific; requires that all banks are idle.
8) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads
or Writes with Auto Precharge disabled.
9) May or may not be bank-specific; if all/any banks are to be precharged, all/any must be in a valid state for precharging.
10) Not bank-specific; BURST TERMINATE affects the most recent Read burst, regardless of bank.
11) Requires appropriate DM masking.
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 48 Rev. 1.0, 2004-03
Table 9 Truth Table 4: Current State Bank n - Command to Bank m (different bank)
Current State CS RAS CAS WE Command Action Notes
Any H X X X Deselect NOP. Continue previous operation. 1)2)3)4)5)6)
L H H H No Operation NOP. Continue previous operation. 1) to 6)
Idle XXXXAny Command
Otherwise Allowed
to Bank m
1) to 6)
Row Activating,
Active, or
Precharging
L L H H Active Select and activate row 1) to 6)
L H L H Read Select column and start Read burst 1) to 7)
L H L L Write Select column and start Write burst 1) to 7)
L L H L Precharge 1) to 6)
Read (Auto
Precharge
Disabled)
L L H H Active Select and activate row 1) to 6)
L H L H Read Select column and start new Read
burst
1) to 7)
L L H L Precharge 1) to 6)
Write (Auto
Precharge
Disabled)
L L H H Active Select and activate row 1) to 6)
L H L H Read Select column and start Read burst 1) to 8)
L H L L Write Select column and start new Write
burst
1) to 7)
L L H L Precharge 1) to 6)
Read (With Auto
Precharge)
L L H H Active Select and activate row 1) to 6)
L H L H Read Select column and start new Read
burst
1) to 7), 9)
L H L L Write Select column and start Write burst 1) to 7), 9), 10)
L L H L Precharge 1) to 6)
Write (With Auto
Precharge)
L L H H Active Select and activate row 1) to 6)
L H L H Read Select column and start Read burst 1) to 7), 9)
L H L L Write Select column and start new Write
burst
1) to 7), 9)
L L H L Precharge 1) to 6)
1) This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Table 7: Clock Enable (CKE) and after tXSNR/tXSRD
has been met (if the previous state was self refresh).
2) This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands
shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is
allowable). Exceptions are covered in the notes below.
3) Current state definitions:
Idle: The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register
accesses are in progress.
Read: A Read burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
Write: A Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated.
Read with Auto Precharge Enabled: See 10).
Write with Auto Precharge Enabled: See 10).
4) AUTO REFRESH and Mode Register Set commands may only be issued when all banks are idle.
5) A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state
only.
6) All states and sequences not shown are illegal or reserved.
Data Sheet 49 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
7) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads
or Writes with Auto Precharge disabled.
8) Requires appropriate DM masking.
9) Concurrent Auto Precharge:
This device supports “Concurrent Auto Precharge”. When a read with auto precharge or a write with auto precharge is
enabled any command may follow to the other banks as long as that command does not interrupt the read or write data
transfer and all other limitations apply (e.g. contention between READ data and WRITE data must be avoided). The
minimum delay from a read or write command with auto precharge enable, to a command to a different banks is
summarized in Table 10.
10) A Write command may be applied after the completion of data output.
Table 10 Truth Table 5: Concurrent Auto Precharge
From Command To Command (different bank) Minimum Delay with Concurrent
Auto Precharge Support
Unit
WRITE w/AP Read or Read w/AP 1 + (BL/2) + tWTR tCK
Write to Write w/AP BL/2 tCK
Precharge or Activate 1 tCK
Read w/AP Read or Read w/AP BL/2 tCK
Write or Write w/AP CL (rounded up) + BL/2 tCK
Precharge or Activate 1 tCK
HYB25D512[16/40/80]0AT–[6/7/7F]
Functional Description
Data Sheet 50 Rev. 1.0, 2004-03
3.6 Simplified State Diagram
Figure 31 Simplified State Diagram
Self
Auto
Idle
MRS
EMRS
Row
Precharge
Power
Write
Power
ACT
Read A
Read
REFS
REFSX
REFA
CKEL
MRS
CKEH
CKEH
CKEL
Write
Power
Applied
Automatic Sequence
Command Sequence
Read A
Write A
Read
PRE PRE
PRE
PRE
Refresh
Refresh
Down
Power
Down
Active
On
A
Read
A
Read
A
Write A
Burst Stop
PREALL
Active
Precharge
Precharge
PREALL
Read
Write
PREALL = Precharge All Banks
MRS = Mode Register Set
EMRS = Extended Mode Register Set
REFS = Enter Self Refresh
REFSX = Exit Self Refresh
REFA = Auto Refresh
CKEL = Enter Power Down
CKEH = Exit Power Down
ACT = Active
Write A = Write with Autoprecharge
Read A = Read with Autoprecharge
PRE = Precharge
Data Sheet 51 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
4 Electrical Characteristics
4.1 Operating Conditions
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This
is a stress rating only, and functional operation should be restricted to recommended operation
conditions. Exposure to absolute maximum rating conditions for extended periods of time may
affect device reliability and exceeding only one of the values may cause irreversible damage to
the integrated circuit.
Table 11 Absolute Maximum Ratings
Parameter Symbol Values Unit Note/ Test Condition
min. typ. max.
Voltage on I/O pins relative to VSS VIN, VOUT –0.5 VDDQ+0.5 V
Voltage on inputs relative to VSS VIN –1.0 +3.6 V
Voltage on VDD supply relative to VSS VDD –1.0 +3.6 V
Voltage on VDDQ supply relative to VSS VDDQ –1.0 +3.6 V
Operating temperature (ambient) TA0—+70 °C—
Storage temperature (plastic) TSTG -55 +150 °C—
Power dissipation (per SDRAM component) PD—1.5 W
Short circuit output current IOUT —50 mA
Table 12 Input and Output Capacitances
Parameter Symbol Values Unit Note/
Test Condition
Min. Typ. Max.
Input Capacitance: CK, CK CI1 1.5 2.5 pF TSOPII 1)
1) These values are guaranteed by design and are tested on a sample base only. VDDQ = VDD = 2.5 V ± 0.2 V, f = 100 MHz,
TA = 25 °C, VOUT(DC) = VDDQ/2, VOUT (Peak to Peak) 0.2 V. Unused pins are tied to ground.
Delta Input Capacitance CdI1 ——0.25pF
1)
Input Capacitance:
All other input-only pins
CI2 2.0 3.0 pF TSOPII 1)
Delta Input Capacitance:
All other input-only pins
CdIO ——0.5pF
1)
Input/Output Capacitance: DQ, DQS, DM CIO 4.0 5.0 pF TSOPII 1)2)
2) DM inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace
matching at the board level.
Delta Input/Output Capacitance: DQ, DQS, DM CdIO ——0.5pF
1)
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Data Sheet 52 Rev. 1.0, 2004-03
4.2 Normal Strength Pull-down and Pull-up Characteristics
1. The nominal pull-down V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
2. The full variation in driver pull-down current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
3. The nominal pull-up V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
4. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
5. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pull-up to pull-down current should be unity ±10%, for device drain
to source voltages from 0.1 to 1.0 V.
Figure 32 Normal Strength Pull-down Characteristics
Figure 33 Normal Strength Pull-up Characteristics
00.5 1 1.5 2 2.50
20
40
60
80
100
120
140
IOUT (mA)
VDDQ - VOUT (V)
Maximum
Nominal High
Nominal Low
Minimum
Maximum
Nominal High
Nominal Low
Minimum
VDDQ - VOUT (V)
0.5 1 1.5 2 2.50
0
-20
-40
-60
-80
-100
-120
-140
-160
IOUT (mA)
Data Sheet 53 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Table 13 Normal Strength Pull-down and Pull-up Currents
Voltage (V) Pulldown Current (mA) Pullup Current (mA)
Nominal
Low
Nominal
High
min. max. Nominal
Low
Nominal
High
min. max.
0.1 6.0 6.8 4.6 9.6 -6.1 -7.6 -4.6 -10.0
0.2 12.2 13.5 9.2 18.2 -12.2 -14.5 -9.2 -20.0
0.3 18.1 20.1 13.8 26.0 -18.1 -21.2 -13.8 -29.8
0.4 24.1 26.6 18.4 33.9 -24.0 -27.7 -18.4 -38.8
0.5 29.8 33.0 23.0 41.8 -29.8 -34.1 -23.0 -46.8
0.6 34.6 39.1 27.7 49.4 -34.3 -40.5 -27.7 -54.4
0.7 39.4 44.2 32.2 56.8 -38.1 -46.9 -32.2 -61.8
0.8 43.7 49.8 36.8 63.2 -41.1 -53.1 -36.0 -69.5
0.9 47.5 55.2 39.6 69.9 -43.8 -59.4 -38.2 -77.3
1.0 51.3 60.3 42.6 76.3 -46.0 -65.5 -38.7 -85.2
1.1 54.1 65.2 44.8 82.5 -47.8 -71.6 -39.0 -93.0
1.2 56.2 69.9 46.2 88.3 -49.2 -77.6 -39.2 -100.6
1.3 57.9 74.2 47.1 93.8 -50.0 -83.6 -39.4 -108.1
1.4 59.3 78.4 47.4 99.1 -50.5 -89.7 -39.6 -115.5
1.5 60.1 82.3 47.7 103.8 -50.7 -95.5 -39.9 -123.0
1.6 60.5 85.9 48.0 108.4 -51.0 -101.3 -40.1 -130.4
1.7 61.0 89.1 48.4 112.1 -51.1 -107.1 -40.2 -136.7
1.8 61.5 92.2 48.9 115.9 -51.3 -112.4 -40.3 -144.2
1.9 62.0 95.3 49.1 119.6 -51.5 -118.7 -40.4 -150.5
2.0 62.5 97.2 49.4 123.3 -51.6 -124.0 -40.5 -156.9
2.1 62.9 99.1 49.6 126.5 -51.8 -129.3 -40.6 -163.2
2.2 63.3 100.9 49.8 129.5 -52.0 -134.6 -40.7 -169.6
2.3 63.8 101.9 49.9 132.4 -52.2 -139.9 -40.8 -176.0
2.4 64.1 102.8 50.0 135.0 -52.3 -145.2 -40.9 -181.3
2.5 64.6 103.8 50.2 137.3 -52.5 -150.5 -41.0 -187.6
2.6 64.8 104.6 50.4 139.2 -52.7 -155.3 -41.1 -192.9
2.7 65.0 105.4 50.5 140.8 -52.8 -160.1 -41.2 -198.2
Table 14 Pull-down and Pull-up Process Variations and Conditions
Parameter Nominal Minimum Maximum
Operating Temperature 25 °C0 °C 70 °C
VDD/VDDQ 2.5 V 2.3 V 2.7 V
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Data Sheet 54 Rev. 1.0, 2004-03
4.3 Weak Strength Pull-down and Pull-up Characteristics
1. The weak pull-down V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
2. The weak pull-up V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
3. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
4. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
5. The full variation in the ratio of the nominal pull-up to pull-down current should be unity ±10%, for device drain
to source voltages from 0.1 to 1.0 V.
Figure 34 Weak Strength Pull-down Characteristics
Figure 35 Weak Strength Pull-up Characteristics
0
10
20
30
40
50
60
70
80
0,0 0,5 1,0 1,5 2,0 2,5
Vout [V]
Iout [mA]
Maxi m um
Typical high
Typical low
Minim um
-80,0
-70,0
-60,0
-50,0
-40,0
-30,0
-20,0
-10,0
0,0
0,0 0,5 1,0 1,5 2,0 2,5
Vout [V]
Iout [V]
Maximum
Typical high
Typical low
Minimum
Data Sheet 55 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Table 15 Weak Strength Driver Pull-down and Pull-up Characteristics
Voltage (V) Pulldown Current (mA) Pullup Current (mA)
Nominal
Low
Nominal
High
min. max. Nominal
Low
Nominal
High
min. max.
0.1 3.4 3.8 2.6 5.0 -3.5 -4.3 -2.6 -5.0
0.2 6.9 7.6 5.2 9.9 -6.9 -8.2 -5.2 -9.9
0.3 10.3 11.4 7.8 14.6 -10.3 -12.0 -7.8 -14.6
0.4 13.6 15.1 10.4 19.2 -13.6 -15.7 -10.4 -19.2
0.5 16.9 18.7 13.0 23.6 -16.9 -19.3 -13.0 -23.6
0.6 19.6 22.1 15.7 28.0 -19.4 -22.9 -15.7 -28.0
0.7 22.3 25.0 18.2 32.2 -21.5 -26.5 -18.2 -32.2
0.8 24.7 28.2 20.8 35.8 -23.3 -30.1 -20.4 -35.8
0.9 26.9 31.3 22.4 39.5 -24.8 -33.6 -21.6 -39.5
1.0 29.0 34.1 24.1 43.2 -26.0 -37.1 -21.9 -43.2
1.1 30.6 36.9 25.4 46.7 -27.1 -40.3 -22.1 -46.7
1.2 31.8 39.5 26.2 50.0 -27.8 -43.1 -22.2 -50.0
1.3 32.8 42.0 26.6 53.1 -28.3 -45.8 -22.3 -53.1
1.4 33.5 44.4 26.8 56.1 -28.6 -48.4 -22.4 -56.1
1.5 34.0 46.6 27.0 58.7 -28.7 -50.7 -22.6 -58.7
1.6 34.3 48.6 27.2 61.4 -28.9 -52.9 -22.7 -61.4
1.7 34.5 50.5 27.4 63.5 -28.9 -55.0 -22.7 -63.5
1.8 34.8 52.2 27.7 65.6 -29.0 -56.8 -22.8 -65.6
1.9 35.1 53.9 27.8 67.7 -29.2 -58.7 -22.9 -67.7
2.0 35.4 55.0 28.0 69.8 -29.2 -60.0 -22.9 -69.8
2.1 35.6 56.1 28.1 71.6 -29.3 -61.2 -23.0 -71.6
2.2 35.8 57.1 28.2 73.3 -29.5 -62.4 -23.0 -73.3
2.3 36.1 57.7 28.3 74.9 -29.5 -63.1 -23.1 -74.9
2.4 36.3 58.2 28.3 76.4 -29.6 -63.8 -23.2 -76.4
2.5 36.5 58.7 28.4 77.7 -29.7 -64.4 -23.2 -77.7
2.6 36.7 59.2 28.5 78.8 -29.8 -65.1 -23.3 -78.8
2.7 36.8 59.6 28.6 79.7 -29.9 -65.8 -23.3 -79.7
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Data Sheet 56 Rev. 1.0, 2004-03
4.4 AC Characteristics
(Notes 1-5 apply to the following Tables; Electrical Characteristics and DC Operating Conditions, AC Operating
Conditions, IDD Specifications and Conditions, and Electrical Characteristics and AC Timing.)
Notes
1. All voltages referenced to VSS.
2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal
reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full
voltage range specified.
3. Figure 36 represents the timing reference load used in defining the relevant timing parameters of the part. It
is not intended to be either a precise representation of the typical system environment nor a depiction of the
actual load presented by a production tester. System designers will use IBIS or other simulation tools to
correlate the timing reference load to a system environment. Manufacturers will correlate to their production
test conditions (generally a coaxial transmission line terminated at the tester electronics).
4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is
still referenced to VREF (or to the crossing point for CK, CK), and parameter specifications are guaranteed for
the specified AC input levels under normal use conditions. The minimum slew rate for the input signals is
1 V/ns in the range between VIL(AC) and VIH(AC).
5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver effectively
switches as a result of the signal crossing the AC input level, and remains in that state as long as the signal
does not ring back above (below) the DC input LOW (HIGH) level).
6. For System Characteristics like Setup & Holdtime Derating for Slew Rate, I/O Delta Rise/Fall Derating, DDR
SDRAM Slew Rate Standards, Overshoot & Undershoot specification and Clamp V-I characteristics see the
latest JEDEC specification for DDR components.
Figure 36 AC Output Load Circuit Diagram / Timing Reference Load
50
Timing Reference Point
Output
(VOUT)
30 pF
VTT
Data Sheet 57 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Table 16 AC Operating Conditions1)
Parameter Symbol Values Unit Note/
Test Condition
min. max.
Input High (Logic 1) Voltage, DQ, DQS and
DM Signals
VIH(AC) VREF + 0.31 V 2)3)
Input Low (Logic 0) Voltage, DQ, DQS and
DM Signals
VIL(AC) VREF - 0.31 V 2)3)
Input Differential Voltage, CK and CK
Inputs
VID(AC) 0.7 VDDQ + 0.6 V 2)3)4)
Input Closing Point Voltage, CK and CK
Inputs
VIX(AC) 0.5 × VDDQ
- 0.2
0.5 × VDDQ
+ 0.2
V2)3)5)
1) 0 °C TA 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V
2) Input slew rate = 1 V/ns.
3) Inputs are not recognized as valid until VREF stabilizes.
4) VID is the magnitude of the difference between the input level on CK and the input level on CK.
5) The value of VIX is expected to equal 0.5 × VDDQ of the transmitting device and must track variations in the DC level of the
same.
Table 17 AC Timing - Absolute Specifications DDR333, DDR266A and DDR266 TSOP
Parameter Symbol –6 –7 –7F Unit Note/
Test Condition 1)
DDR333 DDR266A DDR266
Min. Max. Min. Max. Min. Max.
DQ output access time
from CK/CK
tAC –0.7 +0.7 –0.75 +0.75 –0.75 +0.75 ns 2)3)4)5)
DQS output access time
from CK/CK
tDQSCK –0.6 +0.6 –0.75 +0.75 –0.75 +0.75 ns 2)3)4)5)
CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 tCK 2)3)4)5)
CK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK 2)3)4)5)
Clock Half Period tHP min. (tCL, tCH)min. (tCL, tCH)min. (tCL, tCH)ns 2)3)4)5)
Clock cycle time tCK3 ——
tCK2.5 6.0 12 7.5 12 7.5 12 ns CL = 2.5 2)3)4)5)
tCK2 7.5 12 7.5 12 7.5 12 ns CL = 2.0 2)3)4)5)
DQ and DM input hold
time
tDH 0.45 0.5 0.5 ns 2)3)4)5)
DQ and DM input setup
time
tDS 0.45 0.5 0.5 ns 2)3)4)5)
Control and Addr. input
pulse width (each input)
tIPW 2.2 2.2 2.2 ns 2)3)4)5)6)
DQ and DM input pulse
width (each input)
tDIPW 1.75 1.75 1.75 ns 2)3)4)5)6)
Data-out high-impedance
time from CK/CK
tHZ –0.7 +0.7 –0.75 –0.75 +0.75 ns 2)3)4)5)7)
Data-out low-impedance
time from CK/CK
tLZ –0.7 +0.7 –0.75 +0.75 –0.75 +0.75 ns 2)3)4)5)7)
Write command to 1st
DQS latching transition
tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 tCK 2)3)4)5)
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Data Sheet 58 Rev. 1.0, 2004-03
DQS-DQ skew (DQS and
associated DQ signals)
tDQSQ +0.45 +0.5 +0.5 ns TSOP2)3)4)5)
Data hold skew factor tQHS +0.55 — +0.75 +0.75 ns TSOP2)3)4)5)
DQ/DQS output hold time tQH tHPtQHS tHPtQHS tHPtQHS ns 2)3)4)5)
DQS input low (high) pulse
width (write cycle)
tDQSL,H 0.35 0.35 0.35 tCK 2)3)4)5)
DQS falling edge to CK
setup time (write cycle)
tDSS 0.2 0.2 0.2 tCK 2)3)4)5)
DQS falling edge hold time
from CK (write cycle)
tDSH 0.2 0.2 0.2 tCK 2)3)4)5)
Mode register set
command cycle time
tMRD 2— 2 2 tCK 2)3)4)5)
Write preamble setup time tWPRES 0— 0— 0 ns
2)3)4)5)8)
Write postamble tWPST 0.40 0.60 0.40 0.60 0.40 0.60 tCK 2)3)4)5)9)
Write preamble tWPRE 0.25 0.25 0.25 tCK 2)3)4)5)
Address and control input
setup time
tIS 0.75 0.9 0.9 ns fast slew rate
3)4)5)6)10)
0.8 1.0 1.0 ns slow slew rate
3)4)5)6)10)
Address and control input
hold time
tIH 0.75 0.9 0.9 ns fast slew rate
3)4)5)6)10)
0.8 1.0 1.0 ns slow slew rate
3)4)5)6)10)
Read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK 2)3)4)5)
Read postamble tRPST 0.40 0.60 0.40 0.60 0.40 0.60 tCK 2)3)4)5)
Active to Precharge
command
tRAS 42 70E+3 45 120E+3 45 120E+3 ns 2)3)4)5)
Active to Active/Auto-
refresh command period
tRC 60 65 65 ns 2)3)4)5)
Auto-refresh to
Active/Auto-refresh
command period
tRFC 72 75 75 ns 2)3)4)5)
Active to Read or Write
delay
tRCD 18 20 20 ns 2)3)4)5)
Precharge command
period
tRP 18 20 20 ns 2)3)4)5)
Active to Autoprecharge
delay
tRAP tRCD or tRASmin tRCD or tRASmin tRCD or tRASmin ns 2)3)4)5)
Active bank A to Active
bank B command
tRRD 12 15 15 ns 2)3)4)5)
Write recovery time tWR 15 15 15 ns 2)3)4)5)
Auto precharge write
recovery + precharge time
tDAL (tWR/tCK) + (tRP/tCK)tCK 2)3)4)5)11)
Table 17 AC Timing - Absolute Specifications DDR333, DDR266A and DDR266 TSOP
Parameter Symbol –6 –7 –7F Unit Note/
Test Condition 1)
DDR333 DDR266A DDR266
Min. Max. Min. Max. Min. Max.
Data Sheet 59 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Internal write to read
command delay
tWTR 1— 1 1 tCK 2)3)4)5)
Exit self-refresh to non-
read command
tXSNR 75 75 75 ns 2)3)4)5)
Exit self-refresh to read
command
tXSRD 200 200 200 tCK 2)3)4)5)
Average Periodic Refresh
Interval
tREFI 7.8 7.8 7.8 µs2)3)4)5)12)
1) 0 °C TA 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V
2) Input slew rate 1 V/ns for DDR266A
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference
level for signals other than CK/CK, is VREF. CK/CK slew rate are 1.0 V/ns.
4) Inputs are not recognized as valid until VREF stabilizes.
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT.
6) These parameters guarantee device timing, but they are not necessarily tested on each device.
7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
8) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.
A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were
previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress,
DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but
system performance (bus turnaround) degrades accordingly.
10) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns,
measured between VIH(ac) and VIL(ac).
11) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock
cycle time.
12) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.
Table 17 AC Timing - Absolute Specifications DDR333, DDR266A and DDR266 TSOP
Parameter Symbol –6 –7 –7F Unit Note/
Test Condition 1)
DDR333 DDR266A DDR266
Min. Max. Min. Max. Min. Max.
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Data Sheet 60 Rev. 1.0, 2004-03
Table 18 IDD Conditions
Parameter Symbol
Operating Current: one bank; active/ precharge; tRC = tRCMIN; tCK = tCKMIN;
DQ, DM, and DQS inputs changing once per clock cycle; address and control inputs changing once
every two clock cycles.
IDD0
Operating Current: one bank; active/read/precharge; Burst = 4;
Refer to the following page for detailed test conditions.
IDD1
Precharge Power-Down Standby Current: all banks idle; power-down mode; CKE VILMAX; tCK =
tCKMIN
IDD2P
Precharge Floating Standby Current: CS VIHMIN, all banks idle;
CKE VIHMIN; tCK = tCKMIN, address and other control inputs changing once per clock cycle, VIN = VREF
for DQ, DQS and DM.
IDD2F
Precharge Quiet Standby Current:
CS VIHMIN, all banks idle; CKE VIHMIN; tCK = tCKMIN, address and other control inputs stable
at VIHMIN or VILMAX; VIN = VREF for DQ, DQS and DM.
IDD2Q
Active Power-Down Standby Current: one bank active; power-down mode;
CKE VILMAX; tCK = tCKMIN; VIN = VREF for DQ, DQS and DM.
IDD3P
Active Standby Current: one bank active; CS VIHMIN; CKE VIHMIN; tRC =tRASMAX; tCK = tCKMIN; DQ,
DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock
cycle.
IDD3N
Operating Current: one bank active; Burst = 2; reads; continuous burst; address and control inputs
changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR200
and DDR266A, CL = 3 for DDR333; tCK = tCKMIN; IOUT =0mA
IDD4R
Operating Current: one bank active; Burst = 2; writes; continuous burst; address and control inputs
changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR200
and DDR266A, CL = 3 for DDR333; tCK = tCKMIN
IDD4W
Auto-Refresh Current: tRC = tRFCMIN, burst refresh IDD5
Self-Refresh Current: CKE 0.2 V; external clock on; tCK = tCKMIN IDD6
Operating Current: four bank; four bank interleaving with BL = 4; Refer to the following page for
detailed test conditions.
IDD7
Data Sheet 61 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Table 19 IDD Specification and Conditions
Symbol –6 –7 7F Unit Note/Test Condition1)
1) Test conditions for typical values: VDD = 2.5 V (DDR266, DDR333), TA = 25 °C, test conditions for maximum values: VDD =
2.7 V, TA = 10 °C
DDR333 DDR266A DDR266
typ. max. typ. max. typ. max.
IDD0 155 200 135 170 147 185 mA x4/x8 2)3)
2) IDD specifications are tested after the device is properly initialized and measured at 133 MHz for DDR266, 166 MHz for
DDR333.
3) Input slew rate = 1 V/ns.
155 200 135 170 140 177 mA x16 3)
IDD1 170 215 145 180 158 196 mA x4/x8 3)
170 215 145 180 151 187 mA x16 3)
IDD2P 12 18 10 14 10 14 mA 3)
IDD2F 45 60 40 50 40 50 mA 3)
IDD2Q 30 40 20 28 20 28 mA 3)
IDD3P 17 23 14 18 14 18 mA 3)
IDD3N 60 75 55 70 55 70 mA x4/x8 3)
60 75 55 70 55 70 mA x16 3)
IDD4R 200 245 165 200 172 208 mA x4/x8 3)
200 245 165 200 172 208 mA x16 3)
IDD4W 190 235 160 195 166 203 mA x4/x8 3)
110 130 90 105 94 109 mA x16 3)
IDD5 270 335 255 310 270 329 mA 3)4)
4) Enables on-chip refresh and address counters.
IDD6 2.5 5 2.5 5 2.5 5 mA x4/x8 3)
IDD7 330 405 315 380 331 399 mA x4/x8 3)
330 405 315 380 343 414 mA x16 3)
HYB25D512[16/40/80]0AT–[6/7/7F]
Electrical Characteristics
Data Sheet 62 Rev. 1.0, 2004-03
4.5 IDD1: Operating Current: One Bank Operation
1. Only one bank is accessed with tRCMIN. Burst Mode, Address and Control inputs on NOP edge are changing
once per clock cycle. IOUT = 0 mA.
2. Timing patterns
a) DDR200 (100 MHz, CL = 2): tCK = 10 ns, CL = 2, BL = 4, tRCD = 2 × tCK, tRAS = 5 × tCK
Setup: A0 N R0 N N P0 N
Read: A0 N R0 N N P0 N - repeat the same timing with random address changing
50% of data changing at every burst
b) DDR266A (133 MHz, CL = 2): tCK = 7.5 ns, CL = 2, BL = 4, tRCD = 3 × tCK, tRC = 9 × tCK, tRAS = 5 × tCK
Setup: A0 N N R0 N P0 N N N
Read: A0 N N R0 N P0 N NN - repeat the same timing with random address changing
50% of data changing at every burst
c) DDR333 (166 MHz, CL = 2.5): tCK = 6 ns, CL = 2.5, BL = 4, tRCD = 3 × tCK, tRC = 9 × tCK, tRAS = 5 × tCK
Setup: A0 N N R0 N P0 N N N
Read: A0 N N R0 N P0 N N N - repeat the same timing with random address changing
50% of data changing at every burst
3. Legend: A = Activate, R = Read, W = Write, P = Precharge, N = NOP
IDD7: Operating Current: Four Bank Operation
1. Four banks are being interleaved with tRCMIN. Burst Mode, Address and Control inputs on NOP edge are not
changing. IOUT = 0 mA.
2. Timing patterns
a) DDR200 (100 MHz, CL = 2): tCK = 10 ns, CL = 2, BL = 4, tRRD = 2 × tCK, tRCD = 3 × tCK, Read with
autoprecharge
Setup: A0 N A1 R0 A2 R1 A3 R2
Read: A0 R3 A1 R0 A2 R1 A3 R2 - repeat the same timing with random address changing
50% of data changing at every burst
b) DDR266A (133 MHz, CL = 2): tCK = 7.5 ns, CL = 2, BL = 4, tRRD = 2 × tCK, tRCD = 3 × tCK
Setup: A0 N A1 R0 A2 R1 A3 R2 N R3
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 - repeat the same timing with random address changing
50% of data changing at every burst
c) DDR333 (166 MHz, CL = 2.5): tCK = 6 ns, CL = 2.5, BL = 4, tRRD = 2 × tCK, tRCD = 3 × tCK
Setup: A0 N A1 R0 A2 R1 A3 R2 N R3
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 - repeat the same timing with random address changing
50% of data changing at every burst
3. Legend: A = Activate, R = Read, W = Write, P = Precharge, N = NOP
Data Sheet 63 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
5 Timing Diagrams
Figure 37 Data Input (Write), Timing Burst Length = 4
Figure 38 Data Output (Read), Timing Burst Length = 4
tDH
tDS
tDH
tDS
tDQSL
DI n = Data In for column n.
3 subsequent elements of data in are applied in programmed order following DI n.
DI n
DQS
DQ
DM
Don’t Care
tDQSH
tQH (Data output hold time from DQS)
tDQSQ and tQH are only shown once and are shown referenced to different edges of DQS, only for clarify of illustration.
.
DQS
DQ
tDQSQ max tQH
tDQSQ and tQH both apply to each of the four relevant edges of DQS.
tDQSQ max. is used to determine the worst case setup time for controller data capture.
tQH is used to determine the worst case hold time for controller data capture.
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
Data Sheet 64 Rev. 1.0, 2004-03
Figure 39 Initialize and Mode Register Sets
tIH
200µs
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tMRD
tRFC
tRFC
tRP
tMRD
tMRD
tCL
tCK
tCH
tVTD
PRE EMRS MRS PRE AR AR MRSNOP ACT
CODE CODE CODE RA
CODE CODE CODE RA
BA0=L BA0=L BA
High-Z
High-Z
Power-up:
VDD and CK
stable
Extended Mode
Register Set Load Mode
Register, Reset DLL Load Mode
Register
(with A8 = L)
VDD
VDDQ
VTT (System*)
VREF
CK
CKE
Command
DM
A0-A9, A11
A10
BA0, BA1
DQS
DQ
LVCMOS LOW LEVEL
ALL BANKS
BA0=H
BA1=L BA1=L BA1=L
ALL BANKS
* VTT is not applied directly to the device, however tVTD must be
** tMRD is required before any command can be applied and
The two Autorefresh commands may be moved to follow the first MRS,
greater than or equal to zero to avoid device latchup.
200 cycles of CK are required before a Read command can be applied.
but precede the second Precharge All command.
Don’t Care
200 cycles of CK**
CK
Data Sheet 65 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
Figure 40 Power Down Mode
tIH
tIS
tIH
tIS
tIS
tIS
tIH
tIS
tCL
tCH
tCK
NOP VALIDVALID*
VALID VALID
Enter Power
Down Mode Exit Power
Down Mode
No column accesses are allowed to be in progress at the time power down is entered.
* = If this command is a Precharge (or if the device is already in the idle state) then the power down mode
shown is Precharge power down. If this command is an Active (or if at least one row is already active), then
the power down mode shown is Active power down.
CKE
Command
ADDR
DQS
DQ
DM
Don’t Care
C K
C K
NOP
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
Data Sheet 66 Rev. 1.0, 2004-03
Figure 41 Auto Refresh Mode
tIH
tIS
tIH
tIS
tIH
tIS
tRFC
tRP
tCL
tCH
tCK
PRE NOP NOP AR NOP AR NOPNOP NOP
RA
RA
BA
PRE = Precharge; ACT = Active; RA = Row address; BA = Bank address; AR = Autorefresh.
NOP commands are shown for ease of illustration; other valid commands may be possible at these times.
DM, DQ, and DQS signals are all don't care/high-Z for operations shown.
VALID VALID
ACT
RA
CKE
Command
A0-A8
A9, A11,A12
A10
BA0, BA1
DQS
DQ
DM
BANK(S)
Don’t Care
ALL BANKS
ONE BANK
tRFC
CK
CK
Data Sheet 67 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
Figure 42 Self Refresh Mode
200 cycles
tIH
tIS
tXSRD, tXSRN
tIH
tIS
tIS
tIS
tIH
tIS
tRP*
tCK
tCL
tCH
AR VALIDNOP
VALID
Enter Self
Refresh Mode
Exit Self
Refresh Mode
NOP
* = Device must be in the all banks idle state before entering Self Refresh Mode.
** = tXSNR is required before any non-read command can be applied, and tXSRD (200 cycles of CK).
CKE
Command
ADDR
DQS
DQ
DM
Don’t Care
are required before a Read command can be applied.
CK
CK
Clock must be stable before exiting Self Refresh Mode
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
Data Sheet 68 Rev. 1.0, 2004-03
Figure 43 Read without Auto Precharge (Burst Length = 4)
tHZ (max)
tLZ (max)
tHZ (min)
tRPST
tLZ (min)
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIH
tIS
tRP
tCL
tCH
tCK
PRE NOP NOP ACT NOP NOP NOPNOP
DO n = data out from column n.
3 subsequent elements of data out are provided in the programmed order following DO n.
* = Don't care if A10 is High at this point.
PRE = Precharge; ACT = Active; RA = Row address; BA = Bank address.
NOP commands are shown for ease of illustration; other commands may be valid at these times.
BA x BA x
VALID VALID VALID
NOP Read
COL n RA
RA
BA x*
DO n
CKE
Command
A10
BA0, BA1
DM
DQS
DQ
DQS
DQ
A0-A9, A11, A12
ALL BANKS
ONE BANK
tDQSCK (max)
tRPRE
CL=2
tRPRE
Don’t Care
Case 1:
tAC/tDQSCK = min
Case 2:
tAC/tDQSCK = max tRPST
tAC (max)
tLZ (max)
tDQSCK (min)
tAC (min)
DO n
C K
C K
DIS AP
DIS AP = Disable Auto Precharge.
Data Sheet 69 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
Figure 44 Read with Auto Precharge (Burst Length = 4)
tHZ (max)
tLZ (max)
tHZ (min)
tRPST
tLZ (min)
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIH
tIS
tRP
tCL
tCH
tCK
NOP NOP NOP ACT NOP NOP NOPNOP
DO n = data out from column n.
3 subsequent elements of data out are provided in the programmed order following DO n.
EN AP = enable Auto Precharge.
ACT = active; RA = row address.
NOP commands are shown for ease of illustration; other commands may be valid at these times.
BA x
VALID VALID VALID
NOP Read
COL n RA
RA
DO n
CKE
Command
A10
BA0, BA1
DM
DQS
DQ
DQS
DQ
A0-A9, A11, A12
tDQSCK (max)
tRPRE
CL=2
tRPRE
Don’t Care
Case 1:
tAC/tDQSCK = min
Case 2:
tAC/tDQSCK = max tRPST
tAC (max)
tLZ (max)
tDQSCK (min)
tAC (min)
DO n
EN AP
BA x
C K
C K
tLZ (min)
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
Data Sheet 70 Rev. 1.0, 2004-03
Figure 45 Bank Read Access (Burst Length = 4)
tHZ (max)
tLZ (max)
tHZ (min)
tRPST
tLZ (min)
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tCL
tCH
tCK
Read NOP PRE NOP NOP ACT NOPNOP
BA x BA x*
VALID
NOP ACT
RA RA
BA x
DO n
C K
C K
CKE
Command
A10
BA0, BA1
DM
DQS
DQ
DQS
DQ
tDQSCK (max)
tRPRE
CL=2CL=2
tRPRE
Don’t Care
Case 1:
tAC/tDQSCK = min
Case 2:
tAC/tDQSCK = max tRPST
tAC (max)
tLZ (max)
tDQSCK (min)
tAC (min)
DO n
COL n
RARA
ALL BANKS
RA
ONE BANKDIS AP
BA x
tRP
DO n = data out from column n.
3 subsequent elements of data out are provided in the programmed order following DO n.
DIS AP = disable Auto Precharge.
* = Don't care if A10 is High at this point.
PRE = Precharge; ACT = Active; RA = Row address; BA = Bank address.
NOP commands are shown for ease of illustration; other commands may be valid at these times.
tRCD
A0-A9, A11, A12
tRAS
tRC
tLZ (min)
Data Sheet 71 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
Figure 46 Write without Auto Precharge (Burst Length = 4)
t
IH
t
WPST
t
DQSL
t
IH
t
IS
t
IH
t
IS
t
IH
t
IS
t
IH
t
IS
t
IH
t
IS
t
RP
t
CL
t
CH
t
CK
NOP NOP NOP PRE NOP NOP ACT
NOP
BA x BA
NOP Write
COL n RA
RA
BA x
*
VALID
DIn = Data in for column n.
3 subsequent elements of data in are applied in the programmed order following DIn.
DIS AP = Disable Auto Precharge.
*
= Don't care if A10 is High at this point.
PRE = Precharge; ACT = Active; RA = Row address; BA = Bank address.
NOP commands are shown for ease of illustration; other valid commands may be possible at these times.
DIn
C K
C K
CKE
Command
A10
BA0, BA1
DQS
DQ
DM
DIS AP
ALL BANKS
ONE BANK
t
WR
t
WPRES
t
DQSH
Don’t Care
A0-A9, A11, A12
t
DQSS
= min.
t
DQSS
t
WPRE
t
DSH
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
Data Sheet 72 Rev. 1.0, 2004-03
Figure 47 Write with Auto Precharge (Burst Length = 4)
NOP commands are shown for ease of illustration; other valid commands may be possible at these times.
ACT = Active; RA = Row address; BA = Bank address.
tIH
tWPST
tDQSL
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIS
tRP
tCL
tCH
tCK
NOP NOP NOP NOP NOP NOP ACT
NOP
BA x BA
NOP Write
COL n RA
RA
VALID
DIn = Data in for column n.
3 subsequent elements of data in are applied in the programmed order following DIn.
EN AP = Enable Auto Precharge.
C K
C K
CKE
Command
A10
BA0, BA1
DQS
DQ
DM
tWR
tDQSS
tWPRES
tDQSH
Don’t Care
VALID VALID
EN AP
A0-A9, A11, A12
tDAL
tDQSS = min.
tDSH
tWPRE
DIn
Data Sheet 73 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
Figure 48 Bank Write Access (Burst Length = 4)
tWPST
tDQSL
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tIH
tIS
tCL
tCH
tCK
tRAS
Write NOP NOP NOP NOP PRE NOPNOP
BA x
NOP ACT
RA
RA
DI n = data in for column n.
3 subsequent elements of data in are applied in the programmed order following DI n.
DIS AP = Disable Auto Precharge.
* = don't care if A10 is High at this point.
PRE = Precharge; ACT = Active; RA = Row address.
NOP commands are shown for ease of illustration; other valid commands may be possible at these times.
DIn
VALID
BA x
CKE
Command
A10
BA0, BA1
DQS
DQ
DM
CK
CK
tWPRES tWR
tRCD
ALL BANKS
ONE BANK
DIS AP
Don’t Care
A0-A9, A11, A12 Col n
BA x
tDQSS
tDQSH
tDSH
tWPRE
tDQSS = min.
HYB25D512[16/40/80]0AT–[6/7/7F]
Timing Diagrams
Data Sheet 74 Rev. 1.0, 2004-03
Figure 49 Write DM Operation (Burst Length = 4)
tIH
tWPST
tDQSL
tIH
tIS
tIH
tIS
tIS
tRP
tCL
tCH
tCK
NOP NOP NOP PRE NOP NOP ACT
NOP
NOP Write
COL n RA
DIn
CK
CK
CKE
Command
A10
BA0, BA1
DQS
DQ
DM
tWR
tDQSS
Don’t Care
VALID
tIH
tIS
tIH
tIS
BA x BA
RA
BA x*
ALL BANKS
ONE BANK
DIS AP
DI n = data in for column n.
3 subsequent elements of data in are applied in the programmed order following DI n (the second element of the 4 is masked).
DIS AP = Disable Auto Precharge.
* = Don't care if A10 is High at this point.
PRE = Precharge; ACT = Active; RA = Row address; BA = Bank address.
NOP commands are shown for ease of illustration; other valid commands may be possible at these times.
A0-A9, A11, A12
tDQSH tDSH
tDQSS = min.
tWPRES
Data Sheet 75 Rev. 1.0, 2004-03
HYB25D512[16/40/80]0AT–[6/7/7F]
Package Outlines
6 Package Outlines
Figure 50 P-TSOP66II-1 (Plastic Thin Small Outline Package Type II)
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Does not include plastic protrusion of 0.25 max. per side
3) Does not include dambar protrusion of 0.13 max.
0.12
331
Index Marking
2.5 MAX.
22.22 1)
±0.13
0.3
0.65
3)
6 MAX.
±0.08
66
0.65
32 x
34
15˚
15˚
20.8=
±5˚
±5˚
±0.05
0.1
10.16
66x
M
66x0.1
±0.05
1
0.25
2)
11.76
0.5
±0.2
±0.1
±0.13
+0.06
-0.03
0.15
SMD = Surface Mounted Device
You can find all of our packages, sorts of packing and others in our
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Dimensions in mm
Published by Infineon Technologies AG
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