BCW89
SURFACE MOUNT
PNP SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW89 is a Silicon
PNP Transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount package,
designed for general purpose applications.
MARKING CODE: H3
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Emitter Voltage VCEO 60 V
Collector-Emitter Voltage VCES 60 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 500 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=20V 100 nA
ICBO V
CB=20V, TA=100°C 10 μA
BVCBO I
C=10μA 80 V
BVCEO I
C=2.0mA 60 V
BVCES I
C=10μA 60 V
BVEBO I
C=10μA 5.0 V
VCE(SAT) I
C=10mA, IB=0.5mA 300 mV
VBE(ON) V
CE=5.0V, IC=2.0mA 600 750 mV
hFE V
CE=5.0V, IC=2.0mA 120 260
NF VCE=5.0V, IC=200μA, RS=2.0kΩ
f=1.0kHz, B=200Hz 10 dB
SOT-23 CASE
R1 (20-November 2009)
www.centralsemi.com
BCW89
SURFACE MOUNT
PNP SILICON TRANSISTOR
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
SOT-23 CASE - MECHANICAL OUTLINE
MARKING CODE: H3
www.centralsemi.com
R1 (20-November 2009)
