SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE FZT753
PARTMARKING DETAIL FZT653
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 6A
Continuous Collector Current IC2A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 120 V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 100 V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1
10 µA
µA
VCB
=100V
VCB
=100V,T
amb
=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.13
0.23
0.3
0.5
V
V
IC=1A, IB
=100mA*
IC=2A, IB
=200mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 1.25 V IC=1A, IB
=100mA*
Base-Emitter
Turn-On Voltage
VBE(on) 0.8 1.0 V IC=1A, VCE
=2V*
Static Forward Current
Transfer Ratio
hFE 70
100
55
25
200
200
110
55
300
IC=50mA, VCE
=2V*
IC=500mA, VCE
=2V*
IC=1A, VCE
=2V*
IC=2A, VCE
=2V*
Transition Frequency fT140 175 MHz IC=100mA, VCE =5V
f=100MHz
Output Capacitance Cobo 30 pF VCB
=10V, f=1MHz
Switching Times ton 80 ns IC=500mA, VCC =10V
IB1=IB2=50mA
toff 1200 ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT653
FZT653
C
C
E
B
3 - 210 3 - 209
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
Single Pulse Test at T
amb
=25°C
0.01 0.1 101
I
C
- Collector Current (Amps)
VBE(sat) v IC
V - (Volts)
I
C
- Collector Current (Amps)
hFE v IC
h- Gain
0.01 100.1 1
V
CE
=2V
0.6
0.8
1.0
1.2
I
C
- Collector Current (Amps)
VBE(on) v IC
V - (Volts)
Switching Speeds
I
C
- Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
ts
ns
125
175
225
75
0.6
0.8
1.0
1.2
0.4
0
0.1
0.2
0.4
0.5
0.3
0.6
0.0010.0001
I
C
/I
B
=10
1.4
0.01 100.1 1
0.0001 0.001
I
C
/I
B
=10
0.01 100.1 1
0.0001 0.001
V
CE
=2V
0
td
tr
tf
ns
200
240
80
40
120
160
280
0
2000
2400
800
400
1200
1600
2800
25
0.1 100
1s
100ms
10
DC
0.01
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
300
µ
s
110
0.1
1
SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE FZT753
PARTMARKING DETAIL FZT653
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 6A
Continuous Collector Current IC2A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 120 V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 100 V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1
10 µA
µA
VCB
=100V
VCB
=100V,T
amb
=100°C
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.13
0.23
0.3
0.5
V
V
IC=1A, IB
=100mA*
IC=2A, IB
=200mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.9 1.25 V IC=1A, IB
=100mA*
Base-Emitter
Turn-On Voltage
VBE(on) 0.8 1.0 V IC=1A, VCE
=2V*
Static Forward Current
Transfer Ratio
hFE 70
100
55
25
200
200
110
55
300
IC=50mA, VCE
=2V*
IC=500mA, VCE
=2V*
IC=1A, VCE
=2V*
IC=2A, VCE
=2V*
Transition Frequency fT140 175 MHz IC=100mA, VCE =5V
f=100MHz
Output Capacitance Cobo 30 pF VCB
=10V, f=1MHz
Switching Times ton 80 ns IC=500mA, VCC =10V
IB1=IB2=50mA
toff 1200 ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT653
FZT653
C
C
E
B
3 - 210 3 - 209
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
Single Pulse Test at T
amb
=25°C
0.01 0.1 101
I
C
- Collector Current (Amps)
VBE(sat) v IC
V - (Volts)
I
C
- Collector Current (Amps)
hFE v IC
h- Gain
0.01 100.1 1
V
CE
=2V
0.6
0.8
1.0
1.2
I
C
- Collector Current (Amps)
VBE(on) v IC
V - (Volts)
Switching Speeds
I
C
- Collector Current (Amps)
Switching time
0.1 1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
ts
ns
125
175
225
75
0.6
0.8
1.0
1.2
0.4
0
0.1
0.2
0.4
0.5
0.3
0.6
0.0010.0001
I
C
/I
B
=10
1.4
0.01 100.1 1
0.0001 0.001
I
C
/I
B
=10
0.01 100.1 1
0.0001 0.001
V
CE
=2V
0
td
tr
tf
ns
200
240
80
40
120
160
280
0
2000
2400
800
400
1200
1600
2800
25
0.1 100
1s
100ms
10
DC
0.01
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
300
µ
s
110
0.1
1
