TC110331ECTTR - Microchip Technology



2002 Microchip Technology Inc. DS21355B-page 1

TC110

Features

• Assured Start-up at 0.9V

•50µA (Typ) Supply Current (fOSC = 100kHz)

• 300mA Output Current @ VIN ≥2.7V

•0.5µA Shutdown Mode

• 100kHz and 300kHz Switching Frequency

Options

• Programmable Soft-Start

• 84% Typical Efficiency

• Small Package: 5-Pin SOT-23A

Applications

•Palmtops

• Battery-Operated Systems

• Positive LCD Bias Generators

• Portable Communicators

Device Selection Table

*Other output voltages are available. Please contact

Microchip Technology Inc. for details.

Package Type

General Description

The TC110 is a step-up (Boost) switching controller

that furnishes output currents of up to 300mA while

delivering a typical efficiency of 84%. The TC110

normally operates in pulse width modulation mode

(PWM), but automatically switches to pulse frequency

modulation (PFM) at low output loads for greater

efficiency. Supply current draw for the 100kHz version

is typically only 50µA, and is reduced to less than

0.5µA when the SHDN input is brought low. Regulator

operation is suspended during shutdown. The TC110

accepts input voltages from 2.0V to 10.0V, with a

guaranteed start-up voltage of 0.9V.

The TC110 is available in a small 5-Pin SOT-23A

package, occupies minimum board space and uses

small external components (the 300kHz version allows

for less than 5mm surface-mount magnetics).

Functional Block Diagram

Part

Number

Output

Voltage

(V)* Package Osc.

Freq.

(kHz)

Operating

Temp.

Range

TC110501ECT 5.0 5-Pin SOT-23A 100 -40°Cto+85°C

TC110331ECT 3.3 5-Pin SOT-23A 100 -40°Cto+85°C

TC110301ECT 3.0 5-Pin SOT-23A 100 -40°Cto+85°C

TC110503ECT 5.0 5-Pin SOT-23A 300 -40°Cto+85°C

TC110333ECT 3.3 5-Pin SOT-23A 300 -40°Cto+85°C

TC110303ECT 3.0 5-Pin SOT-23A 300 -40°Cto+85°C

TC110

123

VDD

EXT GND

5-Pin SOT-23A

NOTE: 5-Pin SOT-23A is equivalent to the EIAJ SC-74A

VOUT SHDN/SS

TC110

3V to 5V Supply

SHDN/SS

VDD

EXT GND

IN5817

47µF

Tantalum

Si9410DY

47µH

10µF

Battery

VOUT

*RC Optional

OFF

–

PFM/PWM Step-Up DC/DC Controller

TC110

DS21355B-page 2



2002 Microchip Technology Inc.

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Voltage on VDD,V

OUT, SHDN Pins ........-0.3V to +12V

EXT Output Current ...................................±100mA pk

Voltage on EXT Pin........................-0.3V to VDD +0.3V

Power Dissipation.............................................150mW

Operating Temperature Range.............-40°C to +85°C

Storage Temperature Range..............-40°C to +125°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC110 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Note 1, VIN =0.6xV

R,V

DD =V

OUT,T

A=25°C, unless otherwise noted.

Symbol Parameter Min Typ Max Units Test Conditions

VDD Operating Supply Voltage 2.0 — 10.0 V Note 2

VSTART Start-Up Supply Voltage — — 0.9 V IOUT =1mA

VHOLD-UP Oscillator Hold-Up Voltage — — 0.7 V IOUT =1mA

IDD Boost Mode Supply Current —

—

120

130

180

190

200

280

100

120

µAV

OUT = SHDN = (0.95 x VR);fOSC =300kHz;V

R=3.0V

VR=3.3V

VR=5.0V

fOSC = 100kHz; VR=3.0V

VR=3.3V

VR=5.0V

ISTBY Standby Supply Current —

—

µAV

OUT = SHDN =(V

R+0.5V);f

OSC =300kHz;V

R=3.0V

VR=3.3V

VR=5.0V

fOSC = 100kHz; VR=3.0V

VR=3.3V

VR=5.0V

ISHDN Shutdown Supply Current — 0.05 0.5 µA SHDN =GND,V

O=(V

Rx0.95)

fOSC Oscillator Frequency 255

85 300

100 345

115 kHz VOUT = SHDN = (0.95 x VR);fOSC =300kHz

fOSC = 100kHz

VOUT Output Voltage VR

x0.975 VRVR

x1.025 VNote3

DTYMAX Maximum Duty Cycle

(PWM Mode) ——92%V

OUT = SHDN =0.95xV

DTYPFM Duty Cycle (PFM Mode) 15 25 35 % IOUT =0mA

VIH SHDN Input Logic High 0.65 — — V VOUT =(V

Rx0.95)

VIL SHDN Input Logic Low — — 0.20 V VOUT =(V

Rx0.95)

REXTH EXT ON Resistance to VDD —

—

ΩVOUT = SHDN =(V

Rx0.95);V

R=3.0V

VR=3.3V

VEXT =(V

OUT –0.4V) V

R=5.0V

REXTL EXT ON Resistance to GND —

—

ΩVOUT = SHDN =(V

Rx0.95);V

R=3.0V

VR=3.3V

VEXT =0.4V V

R=5.0V

ηEfficiency — 84 — %

Note 1: VR=3.0V,I

OUT =120mA

VR=3.3V,I

OUT =130mA

VR=5.0V,I

OUT =200mA

2: See Application Notes “Operating Mode” description for clarification.

3: VRis the factory output voltage setting.



2002 Microchip Technology Inc. DS21355B-page 3

TC110

2.0 PIN DESCRIPTIONS

ThedescriptionsofthepinsarelistedinTable2-1.

TABLE 2-1: PIN FUNCTION TABLE

Pin No.

(5-Pin SOT-23A) Symbol Description

OUT Internal device power and voltage sense input. This dual function input provides both feedback

voltage sensing and internal chip power. It should be connected to the regulator output. (See

Section 4.0, Applications).

DD Power supply voltage input.

3 SHDN/SS Shutdown input. A logic low on this input suspends device operation and supply current is

reducedtolessthan0.5µA. The device resumes normal operation when SHDNis again brought

high. An RC circuit connected to this input also determines the soft-start time.

4 GND Ground terminal.

5 EXT External switch transistor drive complimentary output. This pin drives the external switching

transistor. It may be connected to the base of the external bipolar transistor or gate of the external

N-channel MOSFET. (See Section 4.0, Applications).

TC110

DS21355B-page 4



2002 Microchip Technology Inc.

3.0 DETAILED DESCRIPTION

The TC110 is a PFM/PWM step-up DC/DC controller

for use in systems operating from two or more cells, or

in low voltage, line-powered applications. It uses PWM

as the primary modulation scheme, but automatically

converts to PFM at output duty cycles less than

approximately 25%. The conversion to PFM provides

reduced supply current, and therefore higher operating

efficiency at low loads. The TC110 uses an external

switching transistor, allowing construction of switching

regulators with maximum output currents of 300mA.

The TC110 consumes only 70µA, typical, of supply

current and can be placed in a 0.5µA shutdown mode

by bringing the shutdown input (SHDN) low. The

regulator remains disabled while in shutdown mode,

and normal operation resumes when SHDN is brought

high. Other features include start-up at VIN = 0.9V and

an externally programmable soft start time.

3.1 Operating Mode

The TC110 is powered by the voltage present on the

VDD input. The applications circuits of Figure 3-1 and

Figure 3-2 show operation in the bootstrapped and

non-bootstrapped modes. In bootstrapped mode, the

TC110 is powered from the output (start-up voltage is

supplied by VIN through the inductor and Schottky

diode while Q1 is off). In bootstrapped mode, the

switching transistor is turned on harder because its

gate voltage is higher (due to the boost action of the

regulator), resulting in higher output current capacity.

The TC110 is powered from the input supply in the non-

bootstrapped mode. In this mode, the supply current to

the TC110 is minimized. However, the drive applied to

the gate of the switching transistor swings from the

input supply level to ground, so the transistor’s ON

resistance increases at low input voltages. Overall

efficiency is increased since supply current is reduced,

and less energy is consumed charging and discharging

the gate of the MOSFET. While the TC110 is guaran-

teed to start up at 0.9V the device performs to

specifications at 2.0V and higher.

3.2 Low Power Shutdown Mode

The TC110 enters a low power shutdown mode when

SHDN is brought low. While in shutdown, the oscillator

is disabled and the output switch (internal or external)

is shut off. Normal regulator operation resumes when

SHDN is brought high. SHDN maybetiedtotheinput

supply if not used.

Note: Because the TC110 uses an external diode,

a leakage path between the input voltage

and the output node (through the inductor

and diode) exists while the regulator is in

shutdown. Care must be taken in system

design to assure the input supply is isolated

from the load during shutdown.

3.3 Soft Start

Soft start allows the output voltage to gradually ramp

from 0V to rated output value during start-up. This

action minimizes (or eliminates) overshoot, and in

general, reduces stress on circuit components.

Figure 3-3 shows the circuit required to implement soft

start (values of 470K and 0.1µFforR

SS and CSS,

respectively, are adequate for most applications).

3.4 Input Bypass Capacitors

Using an input bypass capacitor reduces peak current

transients drawn from the input supply and reduces the

switching noise generated by the regulator. The source

impedance of the input supply determines the size of

the capacitor that should be used.



2002 Microchip Technology Inc. DS21355B-page 5

TC110

FIGURE 3-1: BOOTSTRAPPED OPERATION

FIGURE 3-2: NON-BOOTSTRAPPED OPERATION

FIGURE 3-3: SOFT START/SHUTDOWN CIRCUIT

TC110XX

VOUT

EXT GND

IN5817

47µF

100µH

VOUT

OFF ON

MTP3055EL

33µF

VIN

SHDN

VDD

–

TC110XX

VOUT

EXT GND

IN5817

47µF

100µH

VOUT

OFF ON

MTP3055EL

33µF

VIN

SHDN

VDD

–

TC110XX

SHDN/SS

CSS

0.1µF

SHDN

RSS

470K

VIN

TC110XX

SHDN/SS

CSS

0.1µF

RSS

470K

Shutdown Used

Shutdown Not Used

TC110

DS21355B-page 6



2002 Microchip Technology Inc.

3.5 Output Capacitor

The effective series resistance of the output capacitor

directly affects the amplitude of the output voltage

ripple. (The product of the peak inductor current and

the ESR determines output ripple amplitude.) There-

fore, a capacitor with the lowest possible ESR should

be selected. Smaller capacitors are acceptable for light

loads or in applications where ripple is not a concern.

The Sprague 595D series of tantalum capacitors are

among the smallest of all low ESR surface mount

capacitors available. Table 4-1 lists suggested

components and suppliers.

3.6 Inductor Selection

Selecting the proper inductor value is a trade-off

between physical size and power conversion require-

ments. Lower value inductors cost less, but result in

higher ripple current and core losses. They are also

more prone to saturate since the coil current ramps

faster and could overshootthe desired peak value. This

not only reduces efficiency, but could also cause the

current rating of the external components to be

exceeded. Larger inductor values reduce both ripple

current and core losses, but are larger in physical size

and tend to increase the start-up time slightly.

A22µH inductor is recommended for the 300kHz

versions and a 47µH inductor is recommended for the

100kHz versions. Inductors with a ferrite core (or

equivalent) are also recommended. For highest

efficiency, use inductors with a low DC resistance (less

than 20 mΩ).

The inductor value directly affects the output ripple

voltage. Equation 3-3 is derived as shown below, and

can be used to calculate an inductor value, given the

required output ripple voltage and output capacitor

series resistance:

EQUATION 3-1:

where ESR is the equivalent series resistance of the

output filter capacitor, and VRIPPLE is in volts.

Expressing di in terms of switch ON resistance and

time:

EQUATION 3-2:

Solving for L:

EQUATION 3-3:

Care must be taken to ensure the inductor can handle

peak switching currents, which can be several times

load currents. Exceeding rated peak current will result

in core saturation and loss of inductance. The inductor

should be selected to withstand currents greater than

IPK (Equation 3-10) without saturating.

Calculating thepeak inductor current is straightforward.

Inductor current consists of an AC (sawtooth) current

centered on an average DC current (i.e., inputcurrent).

Equation 3-6 calculates the average DC current. Note

that minimum input voltage and maximum load current

values should be used:

EQUATION 3-4:

Re-writing in terms of input and output currents and

voltages:

EQUATION 3-5:

Solving for input curent:

EQUATION 3-6:

The sawtooth current is centered on the DC current

level; swinging equally above and below the DC current

calculated in Equation 3-6.The peak inductor current is

the sum of the DC current plus half the AC current.

Note that minimum input voltage should be used when

calculating the AC inductor current (Equation 3-9).

EQUATION 3-7:

EQUATION 3-8:

EQUATION 3-9:

where: VSW =V

CESAT oftheswitch(noteifaCMOS

switch is used substitute VCESAT for rDSON xI

IN)

Combining the DC current calculated in Equation 3-6,

with half the peak AC current calculated in Equation 3-

9, the peak inductor current is given by:

EQUATION 3-10:

VRIPPLE ≈ESR(di)

VRIPPLE ≈ESR [(VIN –V

SW)tON]

≈ESR [(VIN –V

SW)tON]

VRIPPLE

Output Power

Efficiency

Input Power

(VOUTMAX)(I

OUTMAX)

Efficiency

(VINMIN)(I

INMAX)=

(VOUTMAX)(IOUTMAX)

(Efficiency)(VINMAX)

IINMAX =

=L(di)

=V(dt)

[(VINMIN –V

SW)tON]

di =

MAX

+0.5(di)



2002 Microchip Technology Inc. DS21355B-page 7

TC110

3.7 Output Diode

For best results, use a Schottky diode such as the

MA735, 1N5817, MBR0520L or equivalent. Connect

the diode between the FB (or SENSE) inputas close to

the IC as possible. Do not use ordinary rectifier diodes

since the higher threshold voltages reduce efficiency.

3.8 External Switching Transistor

Selection

The EXT output is designed to directly drive an

N-channel MOSFET or NPN bipolar transistor. N-

channel MOSFETs afford the highest efficiency

because they do not draw continuous gate drive

current, but are typically more expensive than bipolar

transistors. If using an N-channel MOSFET, the gate

should be connected directly to the EXT output as

shown in Figure 3-1 and Figure 3-1. EXT is a compli-

mentary outputwith a maximum ON resistances of 43Ω

to VDD when high and 27Ωto ground when low. Peak

currents should be kept below 10mA.

When selecting an N-channel MOSFET, there are three

important parameters to consider: total gate charge

(Qg); ON resistance (rDSON) and reverse transfer

capacitance (CRSS). Qg is a measure of the total gate

capacitance that will ultimately load the EXT output.

Too high a Qg can reduce the slew rate of the EXT

output sufficiently to grossly lower operating efficiency.

Transistors with typical Qg data sheet values of 50nC

or less can be used. For example, the Si9410DY has a

Qg (typ) of 17nC @ VGS = 5V. This equates to a gate

current of:

IGATEMAX =f

MAX x Qg = 115kHz x 17nC = 2mA

The two most significant losses in the N-channel

MOSFET are switching loss and I2R loss. To minimize

these, a transistor with low rDSON and low CRSS should

be used.

Bipolar NPN transistors can be used, but care must be

taken when determining base current drive. Too little

current will not fully turn the transistor on, and result in

unstable regulator operation and low efficiency. Too

high a base drive causes excessive power dissipation

in the transistor and increase switching time due to

over-saturation. For peak efficiency, make RBas large

as possible, but still guaranteeing theswitching transis-

tor is completely saturated when the minimum value of

hFE is used.

3.9 Board Layout Guidelines

As with all inductive switching regulators, the TC110

generates fast switching waveforms which radiate

noise. Interconnecting lead lengths should be mini-

mized to keep stray capacitance, trace resistance and

radiated noise as low as possible. In addition, the GND

pin, input bypass capacitor and output filter capacitor

ground leads should be connected to a single point.

The inputcapacitor should be placedas close to power

and ground pins of the TC110 as possible.

TC110

DS21355B-page 8



2002 Microchip Technology Inc.

4.0 APPLICATIONS

4.1 Circuit Examples

Figure 4-1 shows a TC110 operating as a 100kHz

bootstrapped regulator with soft start. This circuit uses

an NPN switching transistor (Zetex FZT690B) that has

an hFE of 400 and VCESAT of 100 mV at IC= 1A. Other

high beta transistors can be used, but the values of RB

and CBmay need adjustment if hFE is significantly

different from that of the FZT690B.

Figure 4-2 and Figure 4-3 both utilize an N-channel

switching transistor (Silconix Si9410DY). This transistor

is a member of the LittlefootTM family of small outline

MOSFETs. The circuit of Figure 4-2 operates in

bootstrapped mode, while the circuit of Figure 4-3

operates in non-bootstrapped mode.

TABLE 4-1: SUGGESTED COMPONENTS AND SUPPLIERS

Type Inductors Capacitors Diodes Transistors

Surface Mount Sumida

CD54 Series (300kHz)

CD75 (100kHz)

Coiltronics

CTX Series

Matsuo

267 Series

Sprague

595D Series

Nichicon

F93 Series

Nihon

EC10 Series

Matsushita

MA735 Series

N-channel

Silconix

Si9410DY

ON Semiconductor

MTP3055EL

MTD20N03

Through-Hole Sumida

RCH855 Series

RCH110 Series

Renco

RL1284-12

Sanyo

OS-CON Series

Nichicon

PL Series

ON Semiconductor

1N5817 - 1N5822 NPN

Zetex

ZTX694B



2002 Microchip Technology Inc. DS21355B-page 9

TC110

FIGURE 4-1: 100kHz BOOTSTRAPPED REGULATOR WITH SOFT START USING

A BIPOLAR TRANSISTOR

FIGURE 4-2: 300kHz BOOTSTRAPPED, N-CHANNEL TRANSISTOR

FIGURE 4-3: 300kHz NON-BOOTSTRAPPED, N-CHANNEL TRANSISTOR

TC110301

CIN

10µF/16V

VIN

EXT

VOUT

Matsushita

MA737

123

FZT690BCT

10nF

Ceramic

47µH

Sumida CD75

COUT

47µF, 10V

Tant.

SHUTDOWN

(Optional)

RSS

470K

CSS

0.1µF

Ceramic

TC110301

GND

VDD

SHDN/SS

12 3

CIN

10µF/16V

VIN

EXT

VOUT

ON Semiconductor

MBR0520L

Silconix

Si9410DY

22µH

Sumida CD54

COUT

47µF, 16V

Tant.

GND

VDD

SHDN/SS

TC110303

12 3

10µF/16V

EXT

OUT

ON Semiconductor

MBR0520L

Silconix

Si9410DY

22µH

Sumida CD54

OUT

47µF, 16V

Tant.

GND

SHDN/SS

TC110303

TC110

DS21355B-page 10



2002 Microchip Technology Inc.

5.0 TYPICAL CHARACTERISTICS

(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein are

not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

RRENT

OUT

(

)

000

OUTPUT VOLTAGE (V

OUT

) (V)

CL = 9

(

Tantalum

)

1.2V

1.5V 2.0V

2.7V

Output Voltage vs. Output Current

TC110

(

300kHz, 3.3V

)

RRENT

OUT

(

)

CL = 9

(

Tantalum

)

Efficiency vs. Output Current

TC110

(

300kHz, 3.3V

)

000

FFICIENCY

(

)

1.2V

2.7V



2002 Microchip Technology Inc. DS21355B-page 11

TC110

6.0 PACKAGING INFORMATION

6.1 Package Marking Information

Symbol

(100kHz) Symbol

(300kHz) Voltage

B11.

C22.

D33.

E44.

F55.

H66.

Symbol

(100kHz) Symbol

(300kHz) Voltage

0A.0

1B.1

2C.2

3D.3

4E.4

5F.5

6H.6

7K.7

8L.8

9M.9

1represents product classification; TC110 = M

2represents first integer of voltage and frequency

3represents first decimal of voltage and frequency

4represents production lot ID code

TC110

DS21355B-page 12



2002 Microchip Technology Inc.

6.2 Taping Form

6.3 Package Dimensions

Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices

Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size

5-Pin SOT-23A 8 mm 4 mm 3000 7 in

Carrier Tape, Number of Components Per Reel and Reel Size

User Direction of Feed

Device

Marking

PIN 1

Standard Reel Component Orientation

TR Suffix Device

(Mark Right Side Up)

.071 (1.80)

.059 (1.50)

.122 (3.10)

.098 (2.50)

.075 (1.90)

REF.

.020 (0.50)

.012 (0.30)

PIN 1

.037 (0.95)

REF.

.122 (3.10)

.106 (2.70)

.057 (1.45)

.035 (0.90)

.006 (0.15)

.000 (0.00)

.024 (0.60)

.004 (0.10)

10° MAX. .010 (0.25)

.004 (0.09)

SOT-23A-5

Dimensions: inches (mm)

 2002 Microchip Technology Inc. DS21355B-page13

TC110

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-

mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277

3. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification System

TC110

DS21355B-page14  2002 Microchip Technology Inc.

NOTES:



2002 Microchip Technology Inc. DS21355B-page 15

TC110

Information contained in this publication regarding device

applications and the like is intended through suggestion only

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

No representation or warranty is given and no liability is

assumed by Microchip Technology Incorporated with respect

to the accuracy or use of such information, or infringement of

patents or other intellectual property rights arising from such

use or otherwise. Use of Microchip’s products as critical com-

ponents in life support systems is not authorized except with

express written approval by Microchip. No licenses are con-

veyed, implicitly or otherwise, under any intellectual property

rights.

Trademarks

The Microchip name and logo, the Microchip logo, FilterLab,

KEELOQ,microID,MPLAB,PIC,PICmicro,PICMASTER,

PICSTART, PRO MATE, SEEVAL and The Embedded Control

Solutions Company are registered trademarks of Microchip Tech-

nologyIncorporated in the U.S.A. and other countries.

dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,

In-Circuit Serial Programming, ICSP, ICEPIC, microPort,

Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,

MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select

Mode and Total Endurance are trademarks of Microchip

Technology Incorporated in the U.S.A.

Serialized Quick Turn Programming (SQTP) is a service mark

of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received QS-9000 quality system

certification for its worldwide headquarters,

design and wafer fabrication facilities in

Chandler and Tempe, Arizona in July 1999

and Mountain View, California in March 2002.

The Company’s quality system processes and

procedures are QS-9000 compliant for its

PICmicro®8-bit MCUs, KEELOQ®code hopping

devices, Serial EEPROMs, microperipherals,

non-volatile memory and analog products. In

addition, Microchip’s quality system for the

design and manufacture of development

systems is ISO 9001 certified.

DS21355B-page 16



2002 Microchip Technology Inc.

AMERICAS

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200 Fax: 480-792-7277

Technical Support: 480-792-7627

Web Address: http://www.microchip.com

Rocky Mountain

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7966 Fax: 480-792-7456

Atlanta

500 Sugar Mill Road, Suite 200B

Atlanta, GA 30350

Tel: 770-640-0034 Fax: 770-640-0307

Boston

2 Lan Drive, Suite 120

Westford, MA 01886

Tel: 978-692-3848 Fax: 978-692-3821

Chicago

333 Pierce Road, Suite 180

Itasca, IL 60143

Tel: 630-285-0071 Fax: 630-285-0075

Dallas

4570 Westgrove Drive, Suite 160

Addison, TX 75001

Tel: 972-818-7423 Fax: 972-818-2924

Detroit

Tri-Atria Office Building

32255 Northwestern Highway, Suite 190

Farmington Hills, MI 48334

Tel: 248-538-2250 Fax: 248-538-2260

Kokomo

2767 S. Albright Road

Kokomo, Indiana 46902

Tel: 765-864-8360 Fax: 765-864-8387

Los Angeles

18201 Von Karman, Suite 1090

Irvine, CA 92612

Tel: 949-263-1888 Fax: 949-263-1338

New York

150 Motor Parkway, Suite 202

Hauppauge, NY 11788

Tel: 631-273-5305 Fax: 631-273-5335

San Jose

Microchip Technology Inc.

2107 North First Street, Suite 590

San Jose, CA 95131

Tel: 408-436-7950 Fax: 408-436-7955

Toronto

6285 Northam Drive, Suite 108

Mississauga, Ontario L4V 1X5, Canada

Tel: 905-673-0699 Fax: 905-673-6509

ASIA/PACIFIC

Australia

Microchip Technology Australia Pty Ltd

Suite 22, 41 Rawson Street

Epping 2121, NSW

Australia

Tel: 61-2-9868-6733 Fax: 61-2-9868-6755

China - Beijing

Microchip Technology Consulting (Shanghai)

Co., Ltd., Beijing Liaison Office

Unit 915

Bei Hai Wan Tai Bldg.

No. 6 Chaoyangmen Beidajie

Beijing, 100027, No. China

Tel: 86-10-85282100 Fax: 86-10-85282104

China - Chengdu

Microchip Technology Consulting (Shanghai)

Co., Ltd., Chengdu Liaison Office

Rm. 2401, 24th Floor,

Ming Xing Financial Tower

No. 88 TIDU Street

Chengdu 610016, China

Tel: 86-28-86766200 Fax: 86-28-86766599

China - Fuzhou

Microchip Technology Consulting (Shanghai)

Co., Ltd., Fuzhou Liaison Office

Unit 28F, World Trade Plaza

No. 71 Wusi Road

Fuzhou 350001, China

Tel: 86-591-7503506 Fax: 86-591-7503521

China - Shanghai

Microchip Technology Consulting (Shanghai)

Co., Ltd.

Room 701, Bldg. B

Far East International Plaza

No. 317 Xian Xia Road

Shanghai, 200051

Tel: 86-21-6275-5700 Fax: 86-21-6275-5060

China - Shenzhen

Microchip Technology Consulting (Shanghai)

Co., Ltd., Shenzhen Liaison Office

Rm. 1315, 13/F, Shenzhen Kerry Centre,

Renminnan Lu

Shenzhen 518001, China

Tel: 86-755-2350361 Fax: 86-755-2366086

China - Hong Kong SAR

Microchip Technology Hongkong Ltd.

Unit 901-6, Tower 2, Metroplaza

223 Hing Fong Road

Kwai Fong, N.T., Hong Kong

Tel: 852-2401-1200 Fax: 852-2401-3431

India

Microchip Technology Inc.

India Liaison Office

Divyasree Chambers

1 Floor, Wing A (A3/A4)

No. 11, O’Shaugnessey Road

Bangalore, 560 025, India

Tel: 91-80-2290061 Fax: 91-80-2290062

Japan

Microchip Technology Japan K.K.

Benex S-1 6F

3-18-20, Shinyokohama

Kohoku-Ku, Yokohama-shi

Kanagawa, 222-0033, Japan

Tel: 81-45-471- 6166 Fax: 81-45-471-6122

Korea

Microchip Technology Korea

168-1, Youngbo Bldg. 3 Floor

Samsung-Dong, Kangnam-Ku

Seoul, Korea 135-882

Tel: 82-2-554-7200 Fax: 82-2-558-5934

Singapore

Microchip Technology Singapore Pte Ltd.

200 Middle Road

#07-02 Prime Centre

Singapore, 188980

Tel: 65-6334-8870 Fax: 65-6334-8850

Taiwan

Microchip Technology Taiwan

11F-3, No. 207

Tung Hua North Road

Taipei, 105, Taiwan

Tel: 886-2-2717-7175 Fax: 886-2-2545-0139

EUROPE

Denmark

Microchip Technology Nordic ApS

Regus Business Centre

Lautrup hoj 1-3

Ballerup DK-2750 Denmark

Tel: 45 4420 9895 Fax: 45 4420 9910

France

Microchip Technology SARL

Parc d’Activite du Moulin de Massy

43 Rue du Saule Trapu

Batiment A - ler Etage

91300 Massy, France

Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79

Germany

Microchip Technology GmbH

Gustav-Heinemann Ring 125

D-81739 Munich, Germany

Tel: 49-89-627-144 0 Fax: 49-89-627-144-44

Italy

Microchip Technology SRL

Centro Direzionale Colleoni

Palazzo Taurus 1 V. Le Colleoni 1

20041 Agrate Brianza

Milan, Italy

Tel: 39-039-65791-1 Fax: 39-039-6899883

United Kingdom

Microchip Ltd.

505 Eskdale Road

Winnersh Triangle

Wokingham

Berkshire, England RG41 5TU

Tel: 44 118 921 5869 Fax: 44-118 921-5820

05/01/02

WORLDWIDE SALES AND SERVICE