Device Operating
Temperature Range Package
SEMICONDUCTOR
TECHNICAL DATA
SINGLE IGBT
GATE DRIVER
ORDERING INFORMATION
MC33153D
MC33153P TA = –40° to +105°CSO–8
DIP–8
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
8
1
18
7
6
5
2
3
4
(Top View)
Current Sense
Input
Kelvin Gnd
VEE
Input
Fault Blanking/
Desaturation Input
Drive Output
PIN CONNECTIONS
Order this document by MC33153/D
P SUFFIX
PLASTIC PACKAGE
CASE 626
Fault Output
VCC
8
1
1
MOTOROLA ANALOG IC DEVICE DATA
The MC33153 is specifically designed as an IGBT driver for high power
applications that include ac induction motor control, brushless dc motor
control and uninterruptable power supplies. Although designed for driving
discrete and module IGBTs, this device offers a cost effective solution for
driving power MOSFETs and Bipolar T ransistors. Device protection features
include the choice of desaturation or overcurrent sensing and undervoltage
detection. These devices are available in dual–in–line and surface mount
packages and include the following features:
•High Current Output Stage: 1.0 A Source/2.0 A Sink
•Protection Circuits for Both Conventional and Sense IGBTs
•Programmable Fault Blanking Time
•Protection against Overcurrent and Short Circuit
•Undervoltage Lockout Optimized for IGBT’s
•Negative Gate Drive Capability
•Cost Effectively Drives Power MOSFETs and Bipolar Transistors
Representative Block Diagram
This device contains 133 active transistors.
Short Circuit
Latch
Overcurrent
Latch
Fault
Output S
QRCurrent
Sense
Input
Kelvin
Gnd
Fault
Blanking/
Desaturation
Input
Drive
Output
Short Circuit
Comparator
Overcurrent
Comparator
Fault Blanking/
Desaturation
Comparator
Under
Voltage
Lockout
Input
VEE
VCC
VCC
VCC
VEE
VEE
VCC
VEE
VCC
VEE
VCC
VEE
VCC
S
QR
VCC
VCC6
7
4 5
3
8
2
1
130 mV
65 mV
270
µ
A
6.5 V
Output
Stage
12 V/
11 V
100 k
Motorola, Inc. 1998 Rev 2
MC33153
2MOTOROLA ANALOG IC DEVICE DATA
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage V
VCC to VEE VCC – VEE 20
Kelvin Ground to VEE (Note 1) KGnd – VEE 20
Logic Input Vin VEE –0.3 to VCC V
Current Sense Input VS–0.3 to VCC V
Blanking/Desaturation Input VBD –0.3 to VCC V
Gate Drive Output
Source Current
Sink Current
Diode Clamp Current
IO1.0
2.0
1.0
A
Fault Output
Source Current
Sink Curent
IFO 25
10
mA
Power Dissipation and Thermal Characteristics
D Suffix SO–8 Package, Case 751
Maximum Power Dissipation @ TA = 50°C
Thermal Resistance, Junction–to–Air
P Suffix DIP–8 Package, Case 626
Maximum Power Dissipation @ TA = 50°C
Thermal Resistance, Junction–to–Air
PD
RθJA
PD
RθJA
0.56
180
1.0
100
W
°C/W
W
°C/W
Operating Junction Temperature TJ+150 °C
Operating Ambient Temperature T A–40 to +105 °C
Storage Temperature Range Tstg –65 to +150 °C
NOTE: ESD data available upon request.
ELECTRICAL CHARACTERISTICS (VCC = 15 V, VEE = 0 V, Kelvin Gnd connected to VEE. For typical values
TA = 25°C, for min/max values TA is the operating ambient temperature range that applies (Note 2), unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
LOGIC INPUT
Input Threshold Voltage
High State (Logic 1)
Low State (Logic 0) VIH
VIL –
1.2 2.70
2.30 3.2
–
V
Input Current
High State (VIH = 3.0 V)
Low State (VIL = 1.2 V) IIH
IIL –
–130
50 500
100
µA
DRIVE OUTPUT
Output Voltage
Low State (ISink = 1.0 A)
High State (ISource = 500 mA) VOL
VOH –
12 2.0
13.9 2.5
–
V
Output Pull–Down Resistor RPD –100 200 kΩ
FAULT OUTPUT
Output voltage
Low State (ISink = 5.0 mA)
High State (ISource = 20 mA) VFL
VFH –
12 0.2
13.3 1.0
–
V
SWITCHING CHARACTERISTICS
Propagation Delay (50% Input to 50% Output CL = 1.0 nF)
Logic Input to Drive Output Rise
Logic Input to Drive Output Fall tPLH(in/out)
tPHL (in/out) –
–80
120 300
300
ns
Drive Output Rise T ime (10% to 90%) CL = 1.0 nF tr– 17 55 ns
Drive Output Fall T ime (90% to 10%) CL = 1.0 nF tf– 17 55 ns
NOTES: 1.Kelvin Ground must always be between VEE and VCC.
2.Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
Tlow = –40°C for MC33153 Thigh = +105°C for MC33153
MC33153
3
MOTOROLA ANALOG IC DEVICE DATA
ELECTRICAL CHARACTERISTICS (continued) (VCC = 15 V, VEE = 0 V, Kelvin Gnd connected to VEE. For typical values
TA = 25°C, for min/max values TA is the operating ambient temperature range that applies (Note 2), unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
SWITCHING CHARACTERISTICS (continued)
Propagation Delay µs
Current Sense Input to Drive Output tP(OC) –0.3 1.0
Fault Blanking/Desaturation Input to Drive Output tP(FLT) –0.3 1.0
UVLO
Startup Voltage VCC start 11.3 12 12.6 V
Disable Voltage VCC dis 10.4 11 11.7 V
COMPARATORS
Overcurrent Threshold Voltage (VPin8 > 7.0 V) VSOC 50 65 80 mV
Short Circuit Threshold Voltage (VPin8 > 7.0 V) VSSC 100 130 160 mV
Fault Blanking/Desaturation Threshold (VPin1 > 100 mV) Vth(FLT) 6.0 6.5 7.0 V
Current Sense Input Current (VSI = 0 V) ISI ––1.4 –10 µA
FAULT BLANKING/DESATURATION INPUT
Current Source (VPin8 = 0 V, VPin4 = 0 V) Ichg –200 –270 –300 µA
Discharge Current (VPin8 = 15 V, VPin4 = 5.0 V) Idschg 1.0 2.5 – mA
TOTAL DEVICE
Power Supply Current
Standby (VPin 4 = VCC, Output Open)
Operating (CL = 1.0 nF, f = 20 kHz)
ICC –
–7.2
7.9 14
20
mA
NOTES: 1.Kelvin Ground must always be between VEE and VCC.
2.Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
Tlow = –40°C for MC33153 Thigh = +105°C for MC33153
0
16
0
1.5
VO, OUTPUT VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Iin, INPUT CURRENT (mA)
Figure 1. Input Current versus Input Voltage
Vin, INPUT VOLTAGE (V)
Figure 2. Output Voltage versus Input Voltage
VCC = 15 V
TA = 25
°
C
VCC = 15 V
TA = 25
°
C
1.0
0.5
02.0 4.0 6.0 8.0 10 12 14 16
14
12
10
8.0
6.0
4.0
2.0
01.0 2.0 3.0 4.0 5.0
MC33153
4MOTOROLA ANALOG IC DEVICE DATA
VOH, DRIVE OUTPUT HIGH STATE VOLTAGE (V)
VOH, DRIVE OUTPUT HIGH STATE VOLTAGE (V)
0
15.0
0
2.0
12
2.8
–60
14.0
–60
2.5
–60
3.2
ISource, OUTPUT SOURCE CURRENT (A)
VCC = 15 V
TA = 25
°
C
ISink, OUTPUT SINK CURRENT (A)
TA = 25
°
C
VCC = 15 V
VCC, SUPPLY VOLTAGE (V)
TA, AMBIENT TEMPERATURE (
°
C)
VCC = 15 V
ISource = 500 mA
VOL, OUTPUT LOW STATE VOLTAGE (V)
TA, AMBIENT TEMPERATURE (
°
C)
ISink = 1.0 A
Figure 3. Input Threshold Voltage
versus Temperature
TA, AMBIENT TEMPERATURE (
°
C)
Figure 4. Input Threshold Voltage
versus Supply Voltage
Figure 5. Drive Output Low State Voltage
versus Temperature Figure 6. Drive Output Low State Voltage
versus Sink Current
Figure 7. Drive Output High State Voltage
versus Temperature Figure 8. Drive Output High State Voltage
versus Source Current
TA = 25
°
C
VCC = 15 V
VIH
VIL
VIH
VIL
– VIL, INPUT THRESHOLD VOLTAGE (V)VIH
– VIL, INPUT THRESHOLD VOLTAGE (V)VIH
VOL, OUTPUT LOW STATE VOLTAGE (V)
= 500 mA
= 250 mA
VCC = 15 V
3.0
2.8
2.6
2.4
2.2
2.0 –40 –20 0 20 40 60 80 100 120 140
2.7
2.6
2.5
2.4
2.3
2.2 13 14 15 16 17 18 19 20
2.0
1.5
1.0
0.5
–40 –20 0 20 40 60 80 100 120 140
0
1.6
1.2
0.8
00.2 0.4 0.6 0.8 1.0
–40 –20 0 20 40 60 80 100 120 140
13.9
13.8
13.7
13.6
13.5
14.6
14.2
13.8
13.0 0.1 0.2 0.3 0.4 0.5
0.4
13.4
MC33153
5
MOTOROLA ANALOG IC DEVICE DATA
VSSC, SHORT CIRCUIT THRESHOLD VOLT AGE (mV) VSOC, OVERCURRENT THRESHOLD VOLTAGE (mV)
12
135
12
70
100
14
–60
135
–60
70
50
16
VCC, SUPPLY VOLTAGE (V)
TA = 25
°
C
VCC, SUPPLY VOLTAGE (V)
TA = 25
°
C
VPin 7, FAULT OUTPUT VOLTAGE (V)
VPin 1, CURRENT SENSE INPUT VOLT AGE (mV)
VSSC, SHORT CIRCUIT THRESHOLD VOLT AGE (mV)
TA, AMBIENT TEMPERATURE (
°
C)
VCC = 15 V
VSOC, OVERCURRENT THRESHOLD VOLTAGE (mV)
TA, AMBIENT TEMPERATURE (
°
C)
VCC = 15 V
VO, DRIVE OUTPUT VOLT AGE (V)
Figure 9. Drive Output Voltage
versus Current Sense Input Voltage
VPin 1, CURRENT SENSE INPUT VOLT AGE (mV)
Figure 10. Fault Output Voltage
versus Current Sense Input Voltage
Figure 11. Overcurrent Protection Threshold
Voltage versus Temperature Figure 12. Overcurrent Protection Threshold
Voltage versus Supply Voltage
Figure 13. Short Circuit Comparator Threshold
Voltage versus Temperature Figure 14. Short Circuit Comparator Threshold
Voltage versus Supply Voltage
VCC = 15 V
VPin 4 = 0 V
VPin 8 > 7.0 V
TA = 25
°
C
VCC = 15 V
VPin 4 = 0 V
VPin 8 > 7.0 V
TA = 25
°
C
14
12
10
8.0
6.0
4.0
2.0
055 60 65 70 75 80
12
10
8.0
6.0
4.0
2.0
0110 120 130 140 150 160
68
66
64
62
60 –40 –20 0 20 40 60 80 100 120 140
68
66
64
62
60 14 16 18 20
130
125 –40 –20 0 20 40 60 80 100 120 140 14 16 18 20
130
125
MC33153
6MOTOROLA ANALOG IC DEVICE DATA
, CURRENT SOURCE ( A)Ichg
µ
, CURRENT SOURCE ( A)
VBDT, FAULT BLANKING/DESATURATION
5.0
–200
12
6.6
6.0
16
–60
–200
–60
6.6
0
0
VCC, SUPPLY VOLTAGE (V)
VPin 4 = 0 V
VPin 8 = 0 V
TA = 25
°
C
VCC, SUPPLY VOLTAGE (V)
VPin 4 = 0 V
VPin 1 > 100 mV
TA = 25
°
C
VO, DRIVE OUTPUT VOLT AGE (V)
VPin 8, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)
VCC = 15 V
VPin 4 = 0 V
VPin 1 > 100 mV
TA = 25
°
C
Ichg
µ
TA, AMBIENT TEMPERATURE (
°
C)
VCC = 15 V
VPin 8 = 0 V
VBDT, FAULT BLANKING/DESATURATION
TA, AMBIENT TEMPERATURE (
°
C)
VCC = 15 V
VPin 4 = 0 V
VPin 1 > 100 mV
ISI, CURRENT SENSE INPUT CURRENT ( A)
µ
Figure 15. Current Sense Input Current
versus Voltage
VPin 1, CURRENT SENSE INPUT VOLT AGE (V)
Figure 16. Drive Output Voltage versus Fault
Blanking/Desaturation Input Voltage
VCC = 15 V
TA = 25
°
C
Figure 17. Fault Blanking/Desaturation Comparator
Threshold Voltage versus Temperature Figure 18. Fault Blanking/Desaturation Comparator
Threshold Voltage versus Supply Voltage
Figure 19. Fault Blanking/Desaturation Current
Source versus Temperature Figure 20. Fault Blanking/Desaturation Current
Source versus Supply Voltage
THRESHOLD VOLTAGE (V)
THRESHOLD VOLTAGE (V)
14
12
10
8.0
6.0
4.0
2.0
06.2 6.4 6.6 6.8 7.0
–0.5
–1.0
–1.5 4.0 6.0 8.0 10 12 14 162.0
6.5
6.4 –20 0 20 40 60 80 100 120 140–40
6.5
6.4 14 16 18 20
–220
–240
–260
–280
–300 –20 0 20 40 60 80 100 120 140–40 15 2010
–220
–240
–260
–280
–300
MC33153
7
MOTOROLA ANALOG IC DEVICE DATA
, DISCHARGE CURRENT (mA)Idscg
–60
12.5
0
14.0
0
2.5
10
16
0
1.0
0
–200
Vth(UVLO), UNDERVOLTAGE
TA, AMBIENT TEMPERATURE (
°
C)
Startup Threshold
VCC Increasing
ISource, OUTPUT SOURCE CURRENT (mA)
VCC = 15 V
VPin 4 = 0 V
VPin 1 = 1.0 V
Pin 8 = Open
TA = 25
°
C
VPin 8, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)
VO, DRIVE OUTPUT VOLT AGE (V)
VCC, SUPPLY VOLTAGE (V)
VPin 4 = 0 V
TA = 25
°
C
VPin 7, FAULT OUTPUT VOLTAGE (V)
ISink, OUTPUT SINK CURRENT (mA)
VCC = 15 V
VPin 4 = 5.0 V
TA = 25
°
C
Figure 21. Fault Blanking/Desaturation
Current Source versus Input Voltage
VPin 8, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)
Figure 22. Fault Blanking/Desaturation Discharge
Current versus Input Voltage
VCC = 15 V
VPin 4 = 0 V
TA = 25
°
C
Figure 23. Fault Output Low State Voltage
versus Sink Current Figure 24. Fault Output High State Voltage
versus Source Current
Figure 25. Drive Output Voltage
versus Supply Voltage Figure 26. UVLO Thresholds
versus Temperature
, CURRENT SOURCE ( A)Ichg
µ
VCC = 15 V
VPin 4 = 5.0 V
TA = 25
°
C
VPin 7, FAULT OUTPUT VOLTAGE (V)
Turn–Off
Threshold
Startup
Threshold
T urn–Off Threshold
VCC Decreasing
LOCKOUT THRESHOLD (V)
13.8
13.6
13.4
13.2
4.0 6.0 8.0 10 12 14 16 18 202.0
13.0
–220
–240
–260
–280
–300 4.0 6.0 8.0 10 12 14 162.0 4.0 8.0 12 16
2.0
1.5
1.0
0.5
0
–0.5
0.8
0.6
0.4
0.2
02.0 4.0 6.0 8.0 10
11 12 13 14 15
14
12
10
8.0
6.0
4.0
2.0
0
12.0
11.5
11.0
10.5 –20 20 60 100 140–40 0 40 80 120
MC33153
8MOTOROLA ANALOG IC DEVICE DATA
–60
10
1.0
80
5.0
10
TA, AMBIENT TEMPERATURE (
°
C)
VCC = 15 V
VPin 4 = VCC
Drive Output Open
f, INPUT FREQUENCY (kHz)
VCC = 15 V
TA = 25
°
C
ICC, SUPPL Y CURRENT (mA)
Figure 27. Supply Current versus
Supply Voltage
VCC, SUPPLY VOLTAGE (V)
Figure 28. Supply Current versus Temperature
Output High
Figure 29. Supply Current versus Input Frequency
Output Low
TA = 25
°
C
ICC, SUPPL Y CURRENT (mA)
CL = 10 nF
= 5.0 nF
= 2.0 nF
= 1.0 nF
ICC, SUPPLY CURRENT (mA)
8.0
6.0
4.0
2.0
0 20 40 60 80 100 120 14020 –20
0–4010 15
8.0
6.0
4.0
2.0
0
100010 100
60
40
20
0
OPERATING DESCRIPTION
GATE DRIVE
Controlling Switching Times
The most important design aspect of an IGBT gate drive is
optimization of the switching characteristics. The switching
characteristics are especially important in motor control
applications in which PWM transistors are used in a bridge
configuration. In these applications, the gate drive circuit
components should be selected to optimize turn–on, turn–of f
and off–state impedance. A single resistor may be used to
control both turn–on and turn–off as shown in Figure 30.
However, the resistor value selected must be a compromise
in turn–on abruptness and turn–off losses. Using a single
resistor is normally suitable only for very low frequency
PWM. An optimized gate drive output stage is shown in
Figure 31. This circuit allows turn–on and turn–off to be
optimized separately. The turn–on resistor, Ron, provides
control over the IGBT turn–on speed. In motor control
circuits, the resistor sets the turn–on di/dt that controls how
fast the free–wheel diode is cleared. The interaction of the
IGBT and free–wheeling diode determines the turn–on dv/dt.
Excessive turn–on dv/dt is a common problem in half–bridge
circuits. The turn–off resistor , Roff, controls the turn–off speed
and ensures that the IGBT remains off under commutation
stresses. Turn–off is critical to obtain low switching losses.
While IGBTs exhibit a fixed minimum loss due to minority
carrier recombination, a slow gate drive will dominate the
turn–off losses. This is particularly true for fast IGBTs. It is
also possible to turn–of f an IGBT too fast. Excessive turn–of f
speed will result in large overshoot voltages. Normally, the
turn–off resistor is a small fraction of the turn–on resistor.
The MC33153 contains a bipolar totem pole output stage
that is capable of sourcing 1.0 amp and sinking 2.0 amps
peak. This output also contains a pull down resistor to ensure
that the IGBT is off whenever there is insufficient VCC to the
MC33153.
In a PWM inverter, IGBTs are used in a half–bridge
configuration. Thus, at least one device is always off. While
the IGBT is in the off–state, it will be subjected to changes in
voltage caused by the other devices. This is particularly a
problem when the opposite transistor turns on.
MC33153
9
MOTOROLA ANALOG IC DEVICE DATA
When the lower device is turned on, clearing the upper
diode, the turn–on dv/dt of the lower device appears across
the collector emitter of the upper device. To eliminate
shoot–through currents, it is necessary to provide a low sink
impedance to the device that is in the off–state. In most
applications the turn–off resistor can be made small enough
to hold off the device that is under commutation without
causing excessively fast turn–off speeds.
Figure 30. Using a Single Gate Resistor
Output
VCC
VEE
5
VEE
VEE
3
Rg
IGBT
Figure 31. Using Separate Resistors
for Turn–On and Turn–Off
Output
VCC
VEE
5
VEE
VEE
3
Ron IGBT
Roff
Doff
A negative bias voltage can be used to drive the IGBT into
the off–state. This is a practice carried over from bipolar
Darlington drives and is generally not required for IGBTs.
However, a negative bias will reduce the possibility of
shoot–through. The MC33153 has separate pins for VEE and
Kelvin Ground. This permits operation using a +15/–5.0 V
supply.
INTERFACING WITH OPTOISOLATORS
Isolated Input
The MC33153 may be used with an optically isolated
input. The optoisolator can be used to provide level shifting,
and if desired, isolation from ac line voltages. An optoisolator
with a very high dv/dt capability should be used, such as the
Hewlett Packard HCPL4053. The IGBT gate turn–on resistor
should be set large enough to ensure that the opto’s dv/dt
capability is not exceeded. Like most optoisolators, the
HCPL4053 has an active low open–collector output. Thus,
when the LED is on, the output will be low . The MC33153 has
an inverting input pin to interface directly with an optoisolator
using a pull up resistor. The input may also be interfaced
directly to 5.0 V CMOS logic or a microcontroller.
Optoisolator Output Fault
The MC33153 has an active high fault output. The fault
output may be easily interfaced to an optoisolator. While it is
important that all faults are properly reported, it is equally
important that no false signals are propagated. Again, a high
dv/dt optoisolator should be used.
The LED drive provides a resistor programmable current
of 10 to 20 mA when on, and provides a low impedance path
when off. An active high output, resistor, and small signal
diode provide an excellent LED driver . This circuit is shown in
Figure 32.
Figure 32. Output Fault Optoisolator
Short Circuit
Latch Output
7
VEE
VCC
VEE
Q
UNDER VOLTAGE LOCKOUT
It is desirable to protect an IGBT from insufficient gate
voltage. IGBTs require 15 V on the gate to achieve the rated
on–voltage. At gate voltages below 13 V, the on–voltage
increases dramatically, especially at higher currents. At very
low gate voltages, below 10 V, the IGBT may operate in the
linear region and quickly overheat. Many PWM motor drives
use a bootstrap supply for the upper gate drive. The UVLO
provides protection for the IGBT in case the bootstrap
capacitor discharges.
The MC33153 will typically start up at about 12 V. The
UVLO circuit has about 1.0 V of hysteresis and will disable
the output if the supply voltage falls below about 11 V.
MC33153
10 MOTOROLA ANALOG IC DEVICE DATA
PROTECTION CIRCUITRY
Desaturation Protection
Bipolar Power circuits have commonly used what is known
as “Desaturation Detection”. This involves monitoring the
collector voltage and turning off the device if this voltage rises
above a certain limit. A bipolar transistor will only conduct a
certain amount of current for a given base drive. When the
base is overdriven, the device is in saturation. When the
collector current rises above the knee, the device pulls out of
saturation. The maximum current the device will conduct in
the linear region is a function of the base current and the dc
current gain (hFE) of the transistor.
The output characteristics of an IGBT are similar to a
Bipolar device. However, the output current is a function of
gate voltage instead of current. The maximum current
depends on the gate voltage and the device type. IGBTs tend
to have a very high transconductance and a much higher
current density under a short circuit than a bipolar device.
Motor control IGBTs are designed for a lower current density
under shorted conditions and a longer short circuit survival
time.
The best method for detecting desaturation is the use of a
high voltage clamp diode and a comparator. The MC33153
has a Fault Blanking/Desaturation Comparator which senses
the collector voltage and provides an output indicating when
the device is not fully saturated. Diode D1 is an external high
voltage diode with a rated voltage comparable to the power
device. When the IGBT is “on” and saturated, D1 will pull
down the voltage on the Fault Blanking/Desaturation Input.
When the IGBT pulls out of saturation or is “off”, the current
source will pull up the input and trip the comparator. The
comparator threshold is 6.5 V, allowing a maximum
on–voltage of about 5.8 V.
A fault exists when the gate input is high and VCE is
greater than the maximum allowable VCE(sat). The output of
the Desaturation Comparator is ANDed with the gate input
signal and fed into the Short Circuit and Overcurrent Latches.
The Overcurrent Latch will turn–off the IGBT for the
remainder of the cycle when a fault is detected. When input
goes high, both latches are reset. The reference voltage is
tied to the Kelvin Ground instead of the VEE to make the
threshold independent of negative gate bias. Note that for
proper operation of the Desaturation Comparator and the
Fault Output, the Current Sense Input must be biased above
the Overcurrent and Short Circuit Comparator thresholds.
This can be accomplished by connecting Pin 1 to VCC.
Figure 33. Desaturation Detection
VCC
VEE
VCC
8
270
µ
A
Vref
6.5 V
Desaturation
Comparator
Kelvin
Gnd
D1
The MC33153 also features a programmable fault
blanking time. During turn–on, the IGBT must clear the
opposing free–wheeling diode. The collector voltage will
remain high until the diode is cleared. Once the diode has
been cleared, the voltage will come down quickly to the
VCE(sat) of the device. Following turn–on, there is normally
considerable ringing on the collector due to the COSS
capacitance of the IGBTs and the parasitic wiring inductance.
The fault signal from the Desaturation Comparator must be
blanked sufficiently to allow the diode to be cleared and the
ringing to settle out.
The blanking function uses an NPN transistor to clamp the
comparator input when the gate input is low. When the input
is switched high, the clamp transistor will turn “off”, allowing
the internal current source to charge the blanking capacitor.
The time required for the blanking capacitor to charge up
from the on–voltage of the internal NPN transistor to the trip
voltage of the comparator is the blanking time.
If a short circuit occurs after the IGBT is turned on and
saturated, the delay time will be the time required for the
current source to charge up the blanking capacitor from the
VCE(sat) level of the IGBT to the trip voltage of the
comparator. Fault blanking can be disabled by leaving Pin 8
unconnected.
Sense IGBT Protection
Another approach to protecting the IGBTs is to sense the
emitter current using a current shunt or Sense IGBTs. This
method has the advantage of being able to use high gain
IGBTs which do not have any inherent short circuit capability .
Current sense IGBTs work as well as current sense
MOSFETs in most circumstances. However, the basic
problem of working with very low sense voltages still exists.
Sense IGBTs sense current through the channel and are
therefore linear with respect to the collector current. Because
IGBTs have a very low incremental on–resistance, sense
IGBTs behave much like low–on resistance current sense
MOSFETs. The output voltage of a properly terminated
sense IGBT is very low, normally less than 100 mV.
The sense IGBT approach requires fault blanking to
prevent false tripping during turn–on. The sense IGBT also
requires that the sense signal is ignored while the gate is low .
This is because the mirror output normally produces large
transient voltages during both turn–on and turn–off due to the
collector to mirror capacitance. With non–sensing types of
IGBTs, a low resistance current shunt (5.0 to 50 mΩ) can be
used to sense the emitter current. When the output is an
actual short circuit, the inductance will be very low. Since the
blanking circuit provides a fixed minimum on–time, the peak
current under a short circuit can be very high. A short circuit
discern function is implemented by the second comparator
which has a higher trip voltage. The short circuit signal is
latched and appears at the Fault Output. When a short circuit
is detected, the IGBT should be turned–off for several
milliseconds allowing it to cool down before it is turned back
on. The sense circuit is very similar to the desaturation
circuit. It is possible to build a combination circuit that
provides protection for both Short Circuit capable IGBTs and
Sense IGBTs.
MC33153
11
MOTOROLA ANALOG IC DEVICE DATA
APPLICATION INFORMATION
Figure 34 shows a basic IGBT driver application. When
driven from an optoisolator, an input pull up resistor is
required. This resistor value should be set to bias the output
transistor at the desired current. A decoupling capacitor
should be placed close to the IC to minimize switching noise.
A bootstrap diode may be used for a floating supply. If the
protection features are not required, then both the Fault
Blanking/Desaturation and Current Sense Inputs should both
be connected to the Kelvin Ground (Pin 2). When used with a
single supply, the Kelvin Ground and VEE pins should be
connected together. Separate gate resistors are
recommended to optimize the turn–on and turn–of f drive.
Figure 34. Basic Application
7
4
3
2
1
5
8
6
Fault
Input
Desat/
Blank
Output
Sense
Gnd
VEE
VCC
MC33153
18 V
B+
Bootstrap
Figure 35. Dual Supply Application
7
4
3
2
1
5
8
6
Fault
Input
Desat/
Blank
Output
Sense
Gnd
VEE
VCC
MC33153
15 V
–5.0 V
When used in a dual supply application as in Figure 35, the
Kelvin Ground should be connected to the emitter of the
IGBT. If the protection features are not used, then both the
Fault Blanking/Desaturation and the Current Sense Inputs
should be connected to Ground. The input optoisolator
should always be referenced to VEE.
If desaturation protection is desired, a high voltage diode
is connected to the Fault Blanking/Desaturation pin. The
blanking capacitor should be connected from the
Desaturation pin to the VEE pin. If a dual supply is used, the
blanking capacitor should be connected to the Kelvin
Ground. The Current Sense Input should be tied high
because the two comparator outputs are ANDed together.
Although the reverse voltage on collector of the IGBT is
clamped to the emitter by the free–wheeling diode, there is
normally considerable inductance within the package itself. A
small resistor in series with the diode can be used to protect
the IC from reverse voltage transients.
Figure 36. Desaturation Application
7
4
3
2
1
5
8
6
Fault
Input
Desat/
Blank
Output
Sense
Gnd
VEE
VCC
MC33153
18 V
CBlank
When using sense IGBTs or a sense resistor, the sense
voltage is applied to the Current Sense Input. The sense trip
voltages are referenced to the Kelvin Ground pin. The sense
voltage is very small, typically about 65 mV, and sensitive to
noise. Therefore, the sense and ground return conductors
should be routed as a differential pair . An RC filter is useful in
filtering any high frequency noise. A blanking capacitor is
connected from the blanking pin to VEE. The stray
capacitance on the blanking pin provides a very small level of
blanking if left open. The blanking pin should not be grounded
when using current sensing, that would disable the sense.
The blanking pin should never be tied high, that would short
out the clamp transistor.
Figure 37. Sense IGBT Application
7
4
3
2
1
5
8
6
Fault
Input
Desat/
Blank
Output
Sense
Gnd
VEE
VCC
MC33153
18 V
MC33153
12 MOTOROLA ANALOG IC DEVICE DATA
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
D SUFFIX
PLASTIC PACKAGE
CASE 751–06
(SO–8)
ISSUE T
OUTLINE DIMENSIONS
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
14
58
F
NOTE 2 –A–
–B–
–T–
SEATING
PLANE
H
J
GDK
N
C
L
M
M
A
M
0.13 (0.005) B M
T
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A9.40 10.16 0.370 0.400
B6.10 6.60 0.240 0.260
C3.94 4.45 0.155 0.175
D0.38 0.51 0.015 0.020
F1.02 1.78 0.040 0.070
G2.54 BSC 0.100 BSC
H0.76 1.27 0.030 0.050
J0.20 0.30 0.008 0.012
K2.92 3.43 0.115 0.135
L7.62 BSC 0.300 BSC
M––– 10 ––– 10
N0.76 1.01 0.030 0.040
__
SEATING
PLANE
14
58
A0.25 MCBSS
0.25 MBM
h
q
C
X 45
_
L
DIM MIN MAX
MILLIMETERS
A1.35 1.75
A1 0.10 0.25
B0.35 0.49
C0.19 0.25
D4.80 5.00
E1.27 BSCe3.80 4.00
H5.80 6.20
h
0 7
L0.40 1.25
q
0.25 0.50
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
D
EH
A
Be
B
A1
CA
0.10
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Af firmative Action Employer .
Mfax is a trademark of Motorola, Inc.
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MC33153/D
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