FC 111 Say Si-P SMD, Dual, =2x 2681342 45 $0T-153 FC 112 Say Si-N SMD, Dual, =2x 26C3396 45 8OT-153 - FC 113 Say Si-P SMD, Dual, =2x 2801344 46 SOT-163 . FC 144 Say Si-N SMD, Dual, =2x 2603398 46 SOT-163 . FO 115 Say Si-P SMD, Dual, =2x 2881344 45 SOT-153 FC 116 Say Si-N SMD, Dual, =2x 2803308 45 SOT-153 FC 117 Say Si-P SMD, Dual, =2x 2681745 46 SOT-163 - FC 118 Say Si-N SMD, Dual, =2x 254555 46 SOT-163 - FC 119 Say Si-N SMD, Dual, =2x 2562814 46 SOT-163 - FC 120 Say Si-N SMD, Dual, =2x 2503142 46 SOT-163 - FC 121 Say Si-P SMD, Dual, =2x 2841502 45 SOT-153 - FCB 61 C65(L,LL)P Phi CMOS-sRAM-IC 8k x 8Bit, 55ns, 0...70 28-DIP . FCB 61 CB5(L,LL)T Phi CMOS-sRAM-IC-=FCB 61....P: SMD 28-MDIP - FCF61C@5(L,LL)T Phi CMOS-sRAM-IC-FCB 61...: SMD, ~40...+85 28-MDIP - FoM 7010 Mos-IC Digital-Uhr/Digital Clock 40-DIL FCS 6208. ...6209 Si-NP CS 6208...6209 7 10-92 CS 6208.09 a ~ FOS 9010...9022 Si-WP C8. Q00...9022 7 T0-92 C8 9010...22 oe a FD Si-N =28C3053-D (SMO-Marking) 35 SOT-23 2803053 FD Si-N =2803438-D (SMD-Marking) 39 S0T-89 2803498 FD Si-N =2804258-D (SMD-Marking) 35(2mm) $OT-323 2804258 FD Si-P =BCV 26 (SMD-Marking) 35 SOT-23 >BCV 26 FD Si-N =BFP 35A (SMD-Marking) 44 SOT-143 >BFP 35A FD SiN, =BFQ 17P (SMD-Marking) 39 SOT-89 >BFQA7P _ FD 100 Fh Si-Di $8, 75V, Uf<TV(10mA), <4ns 31a D0-7 1N4148 3ta BAW 62, BAW 76, BAX 95, 1N4148...49, ++ FD 111 Feh Si-Di 88, 75V, Ut<tV(10mA}, <ins Bla DO-7 44148 Bla BAW 62, BAW 76, BAX 95, 1N4148...49, ++ FD 200 Fch Si-Di $, 200V, Uf<1(0,1A), <50ns 31a 00-7 BA 197...198, BAV 20...21, BAW 50 FD 222 Fch Si-Di 8, 150V, Uf<1,05V(0,1A), <60ns Sta D0-7 BA 196...198, BAV 16, BAY 20...21, BAW 50 FD 300 Feh Si-Di Uni, 150, Uf<1V(0,2A), Ir<1nA(125V) 31a .D0-7 BAS 45, FDH 300, FOH 333 FD 333 Feh Si-Di Uni, 150, Uf<1V(0,2A), Ir<3nA(125V) 3la DO-7 BAS 45, FDH 300, FOH $33 FD 600 Fch Si-Di $8, 75V, Uf<1V(0,2A), <4ns 31a BO-7 BAV 12, BAV 14, BAW 26...27, BAX 81 FD 700 Fch Si-Di SS, 20V, 0,05A, Uf-0,89...1,1V(0,05A), <0,7ns 31a DO-7 FDH 700 FD 77 Feh Si-Di 8S, BV, 0,05A, Uf-0,89...1,35V(0,05A), <0,75ns 3ta DO-7 FDH 777 FD.6666 Feh Si-Di SS, 75V, Ufc1V(0.2A), <5ns 31a DO? ; BAW 26...27, BAV 12, BAV 14, BAX 81 FDH 300 Feh, NscSi-Di Uni, 125V, 0,2A, Uf<1V(0,2A), Ir<1nA(125V) 31a D0-35 BAS 45, BAY 135 FDH 333 Foh,NscSi-Di Uni, 125V, 0,2A, Uf<1,05V(0,2A), Ir<3nA(125V) 31a 00-35 BAS 45, BAY 135 FDH 400 Fe, Nsc S-Di Uni, 8, 175V, 0,2A, Uf<1V(0,2A), <50ns 31a D0-35 BA 159 3la BA 197...198, BAV 20...21, BAW 50 FDH 444 Feh,NscSi-Di Uni, S, 125V, 0,2A, Uf<1V(0,2A), <60ns 31a D0-35 BA 159 Sta BA 196...198, BAV 15...16, BAV 19...21 FOH 600 Feh,Nsc Si-Di 8S, SOV, 0,2A, Uf<0,92V(0,1A), <4ns 31a D0-35 1N4148 31a BAW 62, BAW 76, BAX 95, 1N4148...49, ++ FDH 666 Feh,NscSi-Di 88, 25V, 0,2A, Ut<1(0,1A), <4ns 31a DO-35 4N4148 31a BAW 62, BAW 76, BAX 95, 1N4148...49, ++ FDH 700 Fch Si-Di SS, 20V, 0,05A, Uf<1,10V(0,05A), <0,7ns 31a DO-7 FD 700 FOH 777 Feh Si-Di $8, 8V, 0,05A, Ufc 1,35V(0,05A), <0,75ns 31a D0-7 FD 777 FOH 900 Feh, Nec SEDI $8, 40V, 0,24, Utct (0,14), <Ans 3ta p0-35 1N4148 3ta BAV 10, BAW 24...27, BAX 81, 1N4150, ++ FDH 999 Feh,Nsc Si-Di SS, 25V, 0,2A, Uf<1V(0,01A), <Bns 31a D0-35 1N4148 31a BAV 10, BAW 24...27, BAX 81, 1N4150, ++ FOH 1000 Foh,Nsc Si-Di $, BOV, 0,2A, Ufc! V(0,5A) 31a, D0-35 BAW 24...27, BAX 82, BAY 95, 1N4151 FON 600 Feh Si-Di =FDH 600: 31a D0-34 >FDH 600 FDN 666 Fch Si-Di =FDH 666: 31a D0-34 -FDH 666 FDR 300 Fch Si-Di S, RadH, 250V, Uf<0,85V(0,1A), <325ns 3ia D0-7 - FDR 600 Fch Si-Di $8, RadH, 75V, Ul<1V(0,2A), <4ns 3fa b0-7 - FOR 700 Feh Si-Di $8, RadH, 30V, Uf<1,1V(0,05A), <0,7ns 3ta 00-7 - FE Si-N =2803438-E (SMD-Marking) 39 SOT-89 2803438 FE(p,s) Si-P =BCV 46 (SMD-Marking) 35 SOT-23 BV 46 FE Si-N =BFP 93A (SMD-Marking} 44 SOT-143 BFP O3A FE Si-N ___=BFQ.19P (SMD-Marking) _ 39s SOT-89 BFQ 19P FETA...H Gie Si-Di FRr, 50...400V, 1A, Uf<0,95V(1A), <30ns 31a 800-57 BYV 27/200 3ta BYV 26B....E, EGP 10A...G A=50,8=100,C=150,0=200,=250,F=300,6-350, H=400V FE2A....H Gie Si-Di FRr, 50...400V, 2A, Uf<0,95V(2A), <35ns 31a $0D-57 BYV 27/200 Sta BYD 47A...G, BYV 27/..., EGP 20A...G FE3A...H Gie Si-Di FRr, 50...400V, 3A, Uf<0,95V(3A), <35ns 3ta $0D-64 BYV 28/200 31a BYV 26/..., EGP 30A...G FESA....D Gie Si-Di FRr, 50...200V, 5A, Uf<0,95(5A), <35ns 31a $0D-64 BYV 61...63, EGP 50A...G FEGA..H sie SDI FRr, 50. ..400V, 6A, Uf<0,95V(6A), <35ns 31a_ $0D-64 BYV 61...63 . FEBA...J Gie,Tho_Si-Di P FRr, 50...600V, 8A(Tc=100), Uf<0,95V(8A), <35ns 17k 70-220 BYT 79/..., BYV 29/..., BYR 29/..., ++ A=50,B=100,C=150,0=200,F=300,6-400,H-500,J=600V FE16A...J GieTho Si-Di Dual, 50...600V(Te=100), 16A, Uf<0,95V(8A), <35ns ss 17e 70-220 BYV 34/... FE 16 AD...JD Si-Di =FE 16A....: 170 TO-220 FED 16AT...JT FE 16 AN...JN Si-Di =FE 16A....: 17h 10-220 FEN 16AT...JT FE30A....J GieTho Si-Di Dual,50....600V, 30A(TC100),Uf<0,95V(30A),<35...50ns 23f 10-3 BYV 72/..., BYV 74/..., MUR 3005...3060PT FE 30 AD....JD Si-Di =FE 30A...J: 238 TO-3 - FE 30 AN....JN / Si-Di =FE30A...J: 23n 10-3 : _ FE 0654A....C FehTsc-N-FET HF/S25V, Idss=1...40mA, Up<8V 8b T0-106 BF 244A....C, BF 245A...C, 2N5163 FE O65SA.....C Foh.Tsc = N-FET Uni, 30V, fdss>3mA, Up<10V 8b 70-106 BFS 74...79, BSV 78...80, 2N4856...4861 FE 718A... Fh SP SMD, Dual, 40V, 400MHz__ 10-MDIP__T0-89 - FE 2060A,B Fch Si-N =2N2060A,B: SMD 10-MDIP 0-89 - FE 2223(A) Feh Si-N =2N2223(A): SMO 10-MDIP 0-89 . FE 2913....2920(A) Fh Si-N =2N2913...2920(A): SMD 10-MDIP _T0-89 - FE 3423 Feh Si-N =2N3423: SMD 10-MDIP 0-89 - FE 3424 Feh Si-N =2N3424: SMD 10-MDIP_ 0-89 - FE 3726 Feh Si-P =2N3726: SMD 40-MDIP 70-89 - FE 3727 Fch Si-P =2N3727: SMD 10-MDIP 0-89 - FE 3728 Fch Si-N =2N3728: SMD 10-MDIP 0-89 - FE 3729 Feh Si-N =2N3729: SMD 10-MDIP 0-89 - FE 3819 Feh,Tsc = N-FET =2N3819: 0,3W 8b TO-106 >2N3B19 FE 4015....4025 Feh Si-P =2N4015...4025: SMD 10-MDIP 0-89 - FE 4302....4304 Feh,Tsc -NeFET =2N4302....4304: 0,3W 8b T0-106 >2N4302....4303 FE 5245,...6247 Foh,Tsc N-FET =2N5245. ,.5247; 0,36W 8f T0-106 -2N5245,..5247 FE 5257,...5259 FehIsc -N-FET =2N5257....5259; 0,31W 8b TO-106 >2N5257. ..5259 FeS2e4...5286 -Feh,Isc _N-FET =2N5284...5286: 0,31W 8t 10-106 2N5284,..5286 FED 16 AT....JT Gie Si-Di =FEP 16AT...JT: t7r T0-220 FE 16AD....D FED 30 AP.....JP Gie Si-Di =FEP 30AP....JP: 18r 10-247 - FEN 16 AT....JT Gie Si-Di =FEP 16AT....JT: 17h T0-220 FE 16AN...JN FEN 30 AP.....JP Gie Si-Di =FEP SOAP... ..JP: 18h 10-247 . FEP 16 AT....JT Gie Si-Di Dual, 50...600V, 16ATo=100), Uf<0,95V(8A), <50ns 17e T0-220 BYV 3/..., FE16A...J A=50,B=100,C=150,D=200,F=300,G=400,H=500,J=600V