© 2017 Kingbright. All Rights Reserved. Spec No: DSAO8740 / 1203000168 Rev No: V.3B Date: 09/08/2017 Page 1 / 4
DESCRIPTION
zSF4 Made with Gallium Aluminum Arsenide Infrared
Emitting diodes.
FEATURES
z2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness
z Mechanically and spectrally matched to the phototransistor
zPackage : 2000 pcs / reel
zMoisture sensitivity level: 3
zRoHS compliant
APPLICATIONS
zInfrared Illumination for cameras
zMachine vision systems
zSurveillance systems
zIndustrial electronics
zIR data transmission
zRemote control
PACKAGE DIMENSIONS
SELECTION GUIDE
Notes:
1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value.
2. Radiant Intensity / luminous flux: +/-15%.
3. Radiant intensity value is traceable to CIE127-2007 standards.
AP2012SF4C-P22
2.0 x 1.25 mm Infrared Emitting Diode
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.1(0.004") unless otherwise noted.
3. The specifications, characteristics and technical data described in the datasheet are subject to
change without prior notice.
4. The device has a single mounting surface. The device must be mounted according to the specifications.
Part Number Emitting Color
(Material) Lens Type
Po (mW/sr)
@ 20mA [2]
Viewing Angle [1]
Min. Typ. 2θ1/2
AP2012SF4C-P22 Infrared (GaAlAs) Water Clear 0.8 1.5 160°
RECOMMENDED SOLDERING PATTERN
(units : mm; tolerance : ± 0.1)
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© 2017 Kingbright. All Rights Reserved. Spec No: DSAO8740 / 1203000168 Rev No: V.3B Date: 09/08/2017 Page 2 / 4
ABSOLUTE MAXIMUM RATINGS at TA=25°C
ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C
Parameter Symbol Emitting Color
Value
Unit
Typ. Max.
Wavelength at Peak Emission IF = 20mA λpeak Infrared 880 - nm
Spectral Bandwidth at 50% Φ REL MAX
IF = 20mA Δλ Infrared 50 - nm
Capacitance C Infrared 90 - pF
Forward Voltage IF = 20mA VF [1] Infrared 1.3 1.6 V
Reverse Current (VR = 5V) IR Infrared - 10 uA
Temperature Coefficient of Wavelength
IF = 20mA, -10°C ≤ T ≤ 85°C TCλ Infrared 0.3 - nm/°C
Temperature Coefficient of VF
IF = 20mA, -10°C ≤ T ≤ 85°C TCV Infrared -1.3 - mV/°C
Parameter Symbol Unit
Power Dissipation PD 85 mW
Reverse Voltage VR 5 V
Junction Temperature Tj 125 °C
Operating Temperature Top -40 to +85 °C
Storage Temperature Tstg -40 to +85 °C
DC Forward Current IF 50 mA
Peak Forward Current IFM [1] 1200 mA
Thermal Resistance (Junction / Ambient) Rth JA [2] 320 °C/W
Thermal Resistance (Junction / Solder point) Rth JS [2] 240 °C/W
Value
Electrostatic Discharge Threshold (HBM) - 8000 V
Notes:
1. Forward voltage: ±0.1V.
2. Wavelength value is traceable to CIE127-2007 standards.
3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure.
Notes:
1. 1/100 Duty Cycle, 10μs Pulse Width.
2. Rth
JA ,Rth
JS Results from mounting on PC board FR4 (pad size ≥ 16 mm2 per pad).
3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.
AP2012SF4C-P22
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© 2017 Kingbright. All Rights Reserved. Spec No: DSAO8740 / 1203000168 Rev No: V.3B Date: 09/08/2017 Page 3 / 4
0
10
20
30
40
50
0.8 1.0 1.2 1.4 1.6 1.8
T
a
= 25 °C
Forward voltage (V)
Forward current (mA)
0.0
0.5
1.0
1.5
2.0
2.5
0 1020304050
T
a
= 25 °C
Forward current (mA)
Radiant intensity normalised
at 20mA
0
10
20
30
40
50
60
70
-40-20 0 20406080100
Ambient temperature (°C)
Permissible forward current (mA)
0.0
0.5
1.0
1.5
2.0
2.5
-40-200 20406080100
Ambient temperature (°C)
Radiant intensity normalised
at T
a
= 25 °C
0%
20%
40%
60%
80%
100%
600 650 700 750 800 850 900 950 1000 1050
T
a
= 25 °C
SF4
Wavelength (nm)
Relative Intensity (a. u.)
TECHNICAL DATA
RELATIVE INTENSITY vs. WAVELENGTH
INFRARED
TAPE SPECIFICATIONS (units : mm)
REEL DIMENSION (units : mm)
REFLOW SOLDERING PROFILE for LEAD-FREE SMD PROCESS
0.5 0.5
90°
15°
0°
30°
45°
60°
75°
-15°
-30°
-45°
-60°
-75°
-90°
0.01.0 1.0
T
a
= 25 °C
SPATIAL DISTRIBUTION
Notes:
1. Don't cause stress to the LEDs while it is exposed to high temperature.
2. The maximum number of reflow soldering passes is 2 times.
3. Reflow soldering is recommended. Other soldering methods are not recommended as they might
cause damage to the product.
Forward Current vs.
Forward Voltage
Radiant Intensity vs.
Forward Current
Radiant Intensity vs.
Ambient Temperature
Forward Current Derating Curve
AP2012SF4C-P22
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© 2017 Kingbright. All Rights Reserved. Spec No: DSAO8740 / 1203000168 Rev No: V.3B Date: 09/08/2017 Page 4 / 4
PACKING & LABEL SPECIFICATIONS
PRECAUTIONARY NOTES
1. The information included in this document reflects representative usage scenarios and is intended for technical reference only.
2. The part number, type, and specifications mentioned in this document are subject to future change and improvement without notice. Before production usage customer should refer to
the latest datasheet for the updated specifications.
3. When using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet. If
customer usage exceeds the specified limits, Kingbright will not be responsible for any subsequent issues.
4. The information in this document applies to typical usage in consumer electronics applications. If customer's application has special reliability requirements or have life-threatening
liabilities, such as automotive or medical usage, please consult with Kingbright representative for further assistance.
5. The contents and information of this document may not be reproduced or re-transmitted without permission by Kingbright.
6. All design applications should refer to Kingbright application notes available at http://www.KingbrightUSA.com/ApplicationNotes
AP2012SF4C-P22
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