Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Typ Max
30 40
60 75
RθJC 3.1 3.7 °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
°C/W
Maximum Junction-to-Case DSteady-State
Continuous Drain
Current B
TA=25°C
IDSM
TA=25°C PDSM
TC=25°C
Maximum Junction-to-Ambient ASteady-State
Power Dissipation A
V±20Gate-Source Voltage
Drain-Source Voltage
ID
Pulsed Drain Current C
10
20
20
80
TA=70°C
3.1
2
13.5
A
Continuous Drain
Current B,G
Maximum UnitsParameter
TC=25°C
TC=100°C
30
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
Junction and Storage Temperature Range
PD
°C
35
14
-55 to 150
TC=100°C
TA=70°C
Power Dissipation B
W
AON7702
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 13.5A (VGS = 10V)
RDS(ON) < 10mΩ (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 4.5V)
General Description
SRFETTM AON7702/L uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
- RoHS Compliant.
- Halogen Free
SRFE
T
TM
G
S
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
S
S
D
D
D
D
DFN 3x3
Top View Bottom View
Pin 1
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON7702
Symbol Min Typ Max Units
BVDSS 30 V
100
TJ=55°C 500
IGSS 100 nA
VGS(th) 1 1.6 3 V
ID(ON) 80 A
810
TJ=125°C 12 15
11 14
gFS 21 S
VSD 0.38 0.5 V
IS6A
Ciss 2390 4250 pF
Coss 480 pF
Crss 180 pF
Rg0.5 1 1.5 Ω
Qg (10v) 37 48 nC
Qg (4.5v) 16 21 nC
Qgs 9.3 nC
Qgd 5.5 nC
tD(on) 9ns
tr14 ns
tD(off) 32 ns
tf16 ns
trr 29 38 ns
Qrr 15 nC
150
35
14
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=10V, VDS=5V
VDS=30V, VGS=0V
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
IDSS µA
Body Diode Reverse Recovery Charge IF=13.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
VGS=10V, ID=13.5A
Reverse Transfer Capacitance
IF=13.5A, dI/dt=100A/µs
Gate Threshold Voltage VDS=VGS ID=250µA
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
VGS=4.5V, ID=11A
IS=1A,VGS=0V
VDS=5V, ID=13.5A
mΩ
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.1Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=10V, VDS=15V, ID=13.5A
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G.The maximum current rating is limited by bond-wires.
Rev0: Sept 2007
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON7702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
35
14
-55 to 150
60 75
3 3.5
0
20
40
60
80
012345
VDS (Volts)
Figure 1: On-Region Characteristics
ID (A)
4.0V
10V
6.0V
VGS=3V
4.5V
`
3.5V
0
5
10
15
20
25
30
35
40
012345
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
-40°C
6
8
10
12
14
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
0.001
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
-40°C
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
VGS=10V
ID=13.5A
VGS=4.5V
ID=11A
0
5
10
15
20
25
30
2345678910
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
-40°C
VDS=5V
V
GS
=4.5V
V
GS
=10V
ID=13.5A
25°C 125°C
25°C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON7702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
35
14
-55 to 150
60 75
3 3.5
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
ZθJA Normalized Transient
Thermal Resistance
0
2
4
6
8
10
0 10203040
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
1
10
100
1000
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Power (W)
Coss
Cr
ss
0.01
0.1
1
10
100
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1ms
1s
100ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=60°C
10s
10ms
100
µ
s
VDS=15V
ID=13.5A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
T
o
nT
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
