AON7702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON7702/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS (V) = 30V (VGS = 10V) ID = 13.5A RDS(ON) < 10m (VGS = 10V) RDS(ON) < 14m (VGS = 4.5V) - RoHS Compliant. - Halogen Free DFN 3x3 Top View D Bottom View S S S G Pin 1 D D G D D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25C Continuous Drain Current B,G Pulsed Drain Current C TA=70C A 35 14 Junction and Storage Temperature Range 2 TJ, TSTG -55 to 150 Symbol t 10s Steady-State Steady-State W 3.1 PDSM TA=70C Alpha & Omega Semiconductor, Ltd. 10 PD TC=100C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D A 80 IDSM TA=25C Power Dissipation V 13.5 TA=25C B 20 20 ID IDM TC=25C Power Dissipation Units V 20 TC=100C Continuous Drain Current B Maximum 30 RJA RJC Typ 30 60 3.1 C Max 40 75 3.7 Units C/W C/W C/W www.aosmd.com AON7702 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=250A, VGS=0V 100 TJ=55C 500 100 nA 3 V 8 10 12 15 VGS=4.5V, ID=11A 11 14 VDS=5V, ID=13.5A 21 VDS=0V, VGS= 20V VDS=VGS ID=250A 1 ID(ON) On state drain current VGS=10V, VDS=5V 80 VGS=10V, ID=13.5A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10v) Total Gate Charge Qg (4.5v) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time A 0.38 DYNAMIC PARAMETERS Ciss Input Capacitance Crss A 1.6 Gate-Body leakage current Gate Threshold Voltage Output Capacitance Units V VDS=30V, VGS=0V IGSS Coss Max 30 VGS(th) IS Typ 2390 VGS=0V, VDS=15V, f=1MHz S 0.5 V 6 A 4250 pF 480 pF 180 VGS=0V, VDS=0V, f=1MHz 0.5 VGS=10V, VDS=15V, ID=13.5A VGS=10V, VDS=15V, RL=1.1, RGEN=3 m pF 1 1.5 37 48 nC 16 21 nC 9.3 nC 5.5 nC 9 ns 14 ns 32 ns 16 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=13.5A, dI/dt=100A/s 29 Qrr Body Diode Reverse Recovery Charge IF=13.5A, dI/dt=100A/s 15 38 ns nC 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. air environment with T A=25C. The SOA E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still 150 curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G.The maximum current rating is limited by bond-wires. 35 Rev0: Sept 2007 14 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 80 10V 4.5V VDS=5V 35 4.0V 6.0V 30 60 ID(A) ID (A) 25 3.5V 40 20 125C 15 20 25C 10 VGS=3V -40C 5 0 0 0 1 2 3 4 5 0 1 VDS (Volts) Figure 1: On-Region Characteristics 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 14 Normalized On-Resistance 1.8 12 RDS(ON) (m) 2 VGS=4.5V 10 VGS=10V 8 1.6 VGS=10V ID=13.5A 1.4 VGS=4.5V ID=11A 1.2 1 0.8 6 0 5 10 15 20 0.6 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 10 30 ID=13.5A 150 25 25C 15 IS (A) RDS(ON) (m) 1 35 14 20 125C 125C 0.1 25C 10 -55 to 150 0.01 5 -40C -40C 0 0.001 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 60 3 0.4 0.6 75 VSD (Volts) 3.5 0.8 1.0 Figure 6: Body-Diode Characteristics www.aosmd.com AON7702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=15V ID=13.5A 2500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 2000 1500 1000 Coss 500 0 Crss 0 0 10 20 30 40 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10 1000 100 30 TJ(Max)=150C TA=25C 10s 100s 1 1ms RDS(ON) limited 0.1 TJ(Max)=150C TA=60C DC 10ms 100ms 1s 10s Power (W) ID (Amps) 10 0.01 0.1 1 10 10 ZJA Normalized Transient Thermal Resistance 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 10 1 0.0001 0.001 100 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W 100 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 35 14 0.1 -55 to 150 PD 0.01 Ton 0.001 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 60 3 10 T 75 3.5 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com