TT OPTOELECTRONICS INFRARED EMITTERS MAX. [PEAK EMISSION| RISE Ve@ | WAVELENGTH MAX.| MAX. Ig tp =100mAIIf= 100mATYP. n. METERS I TYP. n. SEC.ITYP. n. SEC.) mW LEDSSC LEDS5B DETECTORS PHOTO TRANSISTORS SENSITIVITY (ma/mw/cm?) | BVcEQ| BVaco | Ip (nA) SWITCHING TYP. GE TYPE MIN. . MAX. | t, (uSEC.) te (uSEC.) 14G1 L14G2 L14G3 L14H1 L14H2 L14H3 L14H4 PHOTO DARLINGTONS 2N5777 2N5778 2N5779 2N5780 L14F1 L14F2 PHOTO SWITCHES Tye. CE(SAT) IRRADIANCE TO TRIGGER BLOCKING GE TYPE PAGE NO. (mw/em?) VOLTAGE L8 ok : 10 Lg 42 PHOTO TRANSISTOR OUTPUT ISOLATION CURRENT GE TYPE VOLTAGE (V,,) | TRANSFER . MIN. RATIO MIN. H11A1 2500 H11A2 1500 Hi1A3 2500 H11A4 1500 H11A5 1500 H11A520 5656 H11A550 5656 H11A5100 5656 H15A1 4000 Vems H15A2 4000 Vems 4N25 2500 4N25A 1775 Vams 4N26 1500 4N27 1500 4N28 500 4N35 2500 Vemus 4N36 1750 Vams 4N37 1050 Vams H74A1 1500 128 TYPICAL (uSEC.) TR UOUAAWWWWWWWNYNDN ~porpmnwryn Te AMAWWWWHRWWNHNN prmNnn VceE(saT) MAX.Infrared Emitter Direct replacement for SSL55B, SSL55C, SSL56, SSLS5BF, SSL55CF, SSL56F (29) G1 LED55B, LED55C,LED56,LED558F, LEDSSCF, LEDS6F Gallium Arsenide Infrared-Emitting Diode The General Electric LEDS5B-LED55C-LED56 Series are gallium arsenide, light emitting diodes which emit non-coherent, infrared energy with a peak wave length of 940 nanometers. They are ideally suited for use with silicon detectors. The F versions of these devices have flat lens caps. absolute maximum ratings: (25C unless otherwise specified) Voltage: Reverse Voltage VR 3 volts Currents: Forward Current Continuous Ip 100 mA Forward Current (pw 1 usec 200 Hz) Ip 10 A Dissipations: Power Dissipation (T4 = 25C)* Py 170 mW Power Dissipation (To = 25C)** Py 1.3 WwW Temperatures: Junction Temperature Storage Temperature Lead Soldering Time *Derate 1.36 mW/C above 25C ambient. **Derate 10.4 mW/C above 25C case. Ty -65C to +150C Tstg -65C to +150C 10 seconds at 260C electrical characteristics: (25C unless otherwise specified) MIN. Reverse Leakage Current (Vp = 3V) IR Forward Voltage optical characteristics: (25C unless otherwise specified) Total Power Output (note 1) (Ip = 100mA) LEDS5B-LED5S5BF Po 3.5 LED55C-LEDS5CF 5.4 LEDS6 -LED56F 1.5 Peak Emission Wavelength (Ip = 100mA) Spectral Shift with Temperature Spectral Bandwidth 50% Rise Time 0-90% of Output Fall Time 100-10% of Output Note 1: 1341 LEDS5B LEDSSBF LED55C LEDSSCF LEDS56 LEDS6F 3 195 8 | hse 255 t MAX. 88 , Xx 2veaps E SLANE: i omg Tgigtles NE ool T g39%o0 0 0 ovtgee fl J 3 ( \ ! ANODE CATHODE (CONNECTED TO CASE) TYP. MAX. 10 1.7 940 .28 60 300 200 Total power output, Po, is the total power radiated by the device into a solid angle of 2 7 steradians. NOTE 1: LEAD DIAMETER tS CONTROL LED IN THE ZONE BETWEEN .050 AND .250 FROM THE SEATING PLANE. BETWEEN .250 AND END OF LEADA MAX. OF .021 IS HELD. UNITS BLA mW mW mW nm/C nm nsec nsec| LED5SB, LEDSSC, LED56, LED55BF, LED55CF, LEDS6F too PULSED PW 804 SEC FORWARD CURRENT NORMALIZED Tex 100mA Tax 28C 02 NORMALIZED POWER OUTPUT 0.1 0.05 0.02 0.01 Ol .002 005 01 02 05 0. 0.2 Os 10 2 IF- FORWARD CURRENT -AMPERES 1. POWER OUTPUT VS. INPUT CURRENT aL oo - 9 o 8 s go n o oo $2 Ip~FORWARD CURRENT AMPERES o S s Q 2 | 2 3 4 5 6 7 & VF~ FORWARD VOLTAGE VOLTS 3. LED 558, 55C, 56, SSBF, SSCF, 56F FORWARD VOLTAGE VS. FORWARD CURRENT 9 Te- FORWARD CURRENT -MILLIAMPERES 100 80 z z & 60 a q Qi 5 z 5 3 a w 40 z 5 a B 20 O55 40 30 20 10 oO 10 20 30 40 50 9-ANGULAR DISPLACEMENT FROM OPTICAL AXIS -DEGREES 5. LED 55B, 55C, 56 TYPICAL RADIATION PATTERN 1342 Po NORMALIZED POWER OUTPUT S a 0.2 100 80 60 40 20 Lfere} 80 60 40 20 TYPICAL CHARACTERISTICS NORMALIZED TO Ipsl0OmA N Ta= 25C ~30 ~25 25 80 75 100 125 re) Ta~AMBIENT TEMPERATURE -C 2. POWER OUTPUT VS. TEMPERATURE Ta =100C It 2 3 14 1S Vp - FORWARD VOLTAGE VOLTS 4. FORWARD VOLTAGE VS. FORWARD CURRENT A AS 80 60 40 20 20 40 =~ 60 80 8- ANGULAR DISPLACEMENT FROM OPTICAL AXIS - DEGREES 6. LED 55BF, 55CF, 56F TYPICAL RADIATION PATTERN