September 2013 Doc ID 15610 Rev 4 1/27
1
VN800PS-E
High-side driver
Features
■
ECOPACK
®
: lead free and RoHS compliant
■
Automotive Grade: compliance with AEC
guidelines
■
Very low standby current
■
CMOS compatible input
■
Thermal shutdown protection and diagnosis
■
Undervoltage shutdown
■
Overvoltage clamp
■
Load current limitation
■
Reverse battery protection
■
Electrostatic discharge protection
Description
The VN800PS-E is monolithic device made by
using STMicroelectronics™ VIPower™ M0-3
technology, intended for driving any kind of load
with one side connected to ground.
Active V
CC
pin voltage clamp protects the device
against low energy spikes. Active current
limitation combined with thermal shutdown and
automatic restart protect the device against
overload. Device automatically turns off in case of
ground pin disconnection.
This device is espe cially suitable for industrial
applications in norms conformity with IEC1131
(Programmable Controllers International
Standard).
Type R
DS(on)
I
OUT
V
CC
VN800PS-E 135 mΩ 0.7 A 36 V
Table 1. Device summary
Package Order codes
Tube Tape and reel
SO-8 VN800PS-E VN800PSTR-E
SO-8
www.st.com
Contents VN800PS-E
2/27 Doc ID 15610 Rev 4
Contents
1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Elect rical char acteristi c s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 15
3.1.1 Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 15
3.1.2 Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 16
3.2 Microcontroller I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4 SO-8 maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . . . . 19
4 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1 SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.1 ECOPACK
®
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.2 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.3 SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
VN800PS-E List of tables
Doc ID 15610 Rev 4 3/27
List of tables
Table 1. Device summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 4. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 6. Switching (V
CC
= 24 V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 7. Input pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 8. V
CC
- output diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 9. Status pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 10. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 11. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 12. Electrical transient requirements on V
CC
pin (part 1/3). . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 13. Electrical transient requirements on V
CC
pin (part 2/3). . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 14. Electrical transient requirements on V
CC
pin (part 3/3). . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 15. Thermal parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 16. SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 17. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
List of figures VN800PS-E
4/27 Doc ID 15610 Rev 4
List of figures
Figure 1. Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. Status timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 6. Peak short circuit current test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 7. Avalanche energy test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 8. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 9. Application schematic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 10. Off-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 11. High level input current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 12. Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 13. On-state resistance vs T
case
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 14. On-state resistance vs V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 15. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 16. Input low level. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 17. Turn-on voltage slope. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 18. Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 19. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 20. Turn-off voltage slope. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 21. I
LIM
vs T
case
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 22. SO-8 maximum turn off current versus load inductance. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 23. Demagnetization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 24. SO-8 PC board
(1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 25. SO-8 R
thj-amb
vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . 20
Figure 26. SO-8 thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 27. Thermal fitting model of a single channel HSD in SO-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 28. SO-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 29. SO-8 tube shipment (no suffix). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 30. SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
VN800PS-E Block diagram and pin description
Doc ID 15610 Rev 4 5/27
1 Block diagram and pin description
Figure 1. Block diagram
Figure 2. Conf iguration diagram (top view)
Table 2. Suggested connections for unused and not connected pins
Connection/pin Status N.C. Output Input
Floating X X X X
To ground X Through 10 KΩ resistor
*1'
,1387
287387
67$786
9
&&
&855(17/,0,7(5
3RZHU&/$03
'5,9(5
*$3*&)7
9&&
&/$03
29(592/7$*(
'(7(&7,21
81'(592/7$*(
'(7(&7,21
/2*,&
29(57(03(5$785(
'(7(&7,21
*1'
,1387
67$786
1&
9&&
9&&
287387
287387
62
*$3*&)7
Electrical specifications VN800PS-E
6/27 Doc ID 15610 Rev 4
2 Electrical specifications
Figure 3. Current and voltage conventions
2.1 Absolute maximum ratings
,1387
,6
,,1
9&&
67$786
*1'
9&&
9287
,*1'
287387
9
)
,287
,67$7
967$7
9,1
*$3*&)7
Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
SO-8
V
CC
DC supply voltage 41 V
- V
CC
Reverse DC supply voltage -0.3 V
- I
GND
DC reverse ground pin current -200 mA
I
OUT
DC output current Internal ly lim ited A
- I
OUT
Reverse DC output current -6 A
I
IN
DC input current +/- 10 mA
V
IN
Input voltage range -3/+V
CC
V
V
STAT
DC status voltage +V
CC
V
V
ESD
Electrostatic discharge (human body model: R = 1.5 KΩ;
C=100pF)
- Input
- Status
- Output
- V
CC
4000
4000
5000
5000
V
V
V
V
P
tot
Power di ssipation T
C
=25°C 4.2 W
E
MAX
Maximum switching energy
(L = 77.5 mH; R
L
=0Ω; V
bat
=13.5V; T
jstart
= 150 °C; I
L
=1.5A) 121 mJ
VN800PS-E Electrical specifications
Doc ID 15610 Rev 4 7/27
2.2 Thermal data
T
j
Junction operating temperature Internally limited °C
T
c
Case operating temperature -40 to 150 °C
T
stg
Storage temperature -55 to 150 °C
Table 3. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
SO-8
Table 4. Thermal data
Symbol Parameter Value Unit
SO-8
R
thj-lead
Thermal res is t anc e jun cti on- lea d max 30 °C/W
R
thj-amb
Thermal res is t anc e jun cti on- am bie nt max 93
(1)
°C/W
82
(2)
°C/W
1. When mounted on FR4 printed circuit board with 0.5 cm
2
of copper area (at least 35 µm thick) connected to all V
CC
pins.
2. When mounted on FR4 printed circuit board with 2 cm
2
of copper area (at least 35 µm thick).
Electrical specifications VN800PS-E
8/27 Doc ID 15610 Rev 4
2.3 Electrical characteristics
Values specified in this section are for 8 V< V
CC
<36V; -40°C<T
j
< 150 °C, unless
otherwise stated.
Table 5. Power
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply
voltage 5.5 36 V
V
USD
Undervoltage shutdown 3 4 5.5 V
V
OV
Overvoltage shutdown 36 42 V
R
ON
On-state resistance I
OUT
= 0.5 A; T
j
=25°C
I
OUT
=0.5A 135
270 mΩ
mΩ
I
S
Supply cu rrent Off-state; V
CC
=24V; T
case
=25°C
On-state; V
CC
=24V
On-state; V
CC
=24V; T
case
=100°C
10
1.5 20
3.5
2.6
µA
mA
mA
I
LGND
Output current at turn-off V
CC
=V
STAT
=V
IN
=V
GND
=24V;
V
OUT
=0V 1mA
I
L(off1)
Off-state output current V
IN
=V
OUT
=0V 0 50 µA
I
L(off2)
Off-state output current V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
=125°C 5µA
I
L(off3)
Off-state output current V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
=25°C 3µA
Table 6. Switching (V
CC
= 24 V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time R
L
=48Ω from V
IN
rising edge to
V
OUT
=2.4V -10-µs
t
d(off)
Turn-of f del ay time R
L
=48Ω from V
IN
falling edge to
V
OUT
=21.6V -40-µs
dV
OUT
/dt
(on)
Turn-on voltage slope R
L
=48Ω from V
OUT
= 2.4 V to
V
OUT
=19.2V -See
relative
diagram -V/µs
dV
OUT
/dt
(off)
Turn-of f vo lt a ge slo pe R
L
=48Ω from V
OUT
= 21.6 V to
V
OUT
=2.4V -See
relative
diagram -V/µs
Table 7. Input pin
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
INL
Input low level - 1.25 V
I
INL
Low level input current V
IN
=1.25V 1 - µA
V
INH
Input high level 3.25 - V
VN800PS-E Electrical specifications
Doc ID 15610 Rev 4 9/27
I
INH
High lev el input cur r ent V
IN
=3.25 V - 10 µA
V
I(hyst)
Input hysteresis voltage 0.5 - V
I
IN
Input current V
IN
=V
CC
=36V - 200 µA
Table 7. Input pin (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Table 8. V
CC
- output diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
F
Forward on voltage -I
OUT
= 0.6 A; T
j
= 150 °C - - 0.6 V
Table 9. Status pin
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
STAT
Status low output voltage I
STAT
=1.6 mA - - 0.5 V
I
LSTAT
Status leakage current Normal operation; V
STAT
=V
CC
=36V - - 10 µA
C
STAT
Status pin input
capacitance Normal operation; V
STAT
=5V - - 30 pF
Table 10.
Protections
(1)
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
TSD
Shutdown tempera ture 150 175 200 °C
T
R
Reset temperature 135 °C
T
hyst
Thermal hysteresis 7 15 °C
T
SDL
Status delay in overload
condition T
j
>T
jsh
20 µs
I
lim
DC short circuit current V
CC
=24V; R
LOAD
=10mΩ0.7 2 A
V
demag
Turn -off output clamp voltag e I
OUT
=0.5A; L=6mH V
CC
-47 V
CC
-52 V
CC
-57 V
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals
must be used together with a proper software strategy. If the devi ce is subjected to abnormal conditions, t his software must
limit the duration and number of activation cycles.
Electrical specifications VN800PS-E
10/27 Doc ID 15610 Rev 4
Figure 4. Status timing
Table 11. Truth table
Conditions Input Output Status
Normal operation L
HL
HH
H
Current limitation L
H
H
L
X
X
H
(T
j
< T
TSD
) H
(T
j
> T
TSD
) L
Over temperature L
HL
LH
L
Undervoltage L
HL
LX
X
Overvoltage L
HL
LH
H
29(57(0367$7867,0,1*
7
M
!7
MVK
9
,1
9
67$7
W
6'/
W
6'/
*$3*&)7
VN800PS-E Electrical specifications
Doc ID 15610 Rev 4 11/27
Figure 5. Switching time waveforms
9287
G9287GWRQ
WU

 WI
7GRII
9,1
W
W

7GRQ
G9287GWRII
*$3*&)7
Electrical specifications VN800PS-E
12/27 Doc ID 15610 Rev 4
Table 12. Electrical transient requirements on V
CC
pin (part 1/3)
ISO T/R 7637/1
test pulse
Te st levels
I II III IV Delays and
impedance
1 -25 V -50 V -75 V -100 V 2 ms, 10 Ω
2 +25 V +50 V +75 V +100 V 0.2 ms, 10 Ω
3a -25 V -50 V -100 V -150 V 0.1 µs, 50 Ω
3b +25 V +50 V +75 V +100 V 0.1 µs, 50 Ω
4 -4 V -5 V -6 V -7 V 100 ms, 0.01
Ω
5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2
Ω
Table 13. Electrical transient requirements on V
CC
pin (part 2/3)
ISO T/R 7637/1
Test pulse
Test levels results
I II III IV
1CCCC
2CCCC
3aCCCC
3bCCCC
4CCCC
5CEEE
Table 14. Electrical transient requirements on V
CC
pin (part 3/3)
Class Contents
CAll functions of the device are performed as designed after exposure to
disturbance.
EOne or more functions of the device is not performed as designed after
exposure to disturbance and cannot be returned to proper operation without
replaci ng the device.
VN800PS-E Electrical specifications
Doc ID 15610 Rev 4 13/27
Figure 6. Peak short circuit current test circuit
Figure 7. Avalanche energy test circuit
*1'
Nё
5,1
,1387 287387
5/ Pё
9&&
*1'
67$786 9&&
&21752/
81,7
*$3*&)7
*1'
Nё
5,1
,1387 287387
/2$'
9&&
*1'
67$786 9&&
&21752/
81,7
*$3*&)7
Electrical specifications VN800PS-E
14/27 Doc ID 15610 Rev 4
Figure 8. Waveforms
67$786
,1387
1250$/23(5$7,21
/2$'92/7$*(
81'(592/7$*(
9&&
986'
986'K\VW
,1387
67$786
/2$'92/7$*(
XQGHILQHG
29(592/7$*(
,1387
67$786
9&&929
/2$'92/7$*(
9&&
9&&!929
29(57(03(5$785(
,1387
67$786
776'
75
7M
/2$'&855(17
*$3*&)7
VN800PS-E Application information
Doc ID 15610 Rev 4 15/27
3 Application information
Figure 9. Application schematic
3.1 GND protection network against reverse battery
3.1.1 Solution 1: resistor in the ground line (R
GND
only)
This can be used with any type of load.
The following is an indication on how to dimension the R
GND
resistor.
1) R
GND
≤ 600 mV / (I
S(on)max
)
2) R
GND
≥ (-V
CC
) / (-I
GND
)
where -I
GND
is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device’s datasheet.
Power dissipation in R
GND
(when V
CC
< 0: during reverse battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different HSD. Please note that the value of this
resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not common with the device ground then
the R
GND
produces a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output
values. This shift varies depending on many devices are on in the case of several high side
drivers sharing the sa me R
GND
.
Application information VN800PS-E
16/27 Doc ID 15610 Rev 4
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then the ST suggests to utilize Solution 2 (see Section 3.1.2).
3.1.2 Solution 2: diode (D
GND
) in the ground line
A resistor (R
GND
=1kΩ) should be inserted in parallel to D
GND
if the device is driving an
inductive load.
This small signal diode can be safely shared amongst several different HSD. Also in this
case, the presence of the ground network produces a shift (≈600 mV) in the input threshold
and the status output values if the microprocessor ground is not common with the device
ground. This shift not varies if more than one HSD shares the same diode/resistor network.
Series resistor in input and status lines are also required to prevent that, during battery
voltage transient, the current exceeds the absolute maximum rating.
Safest configuration for unused input and status pin is to leave them unconnected.
3.2 Microcontroller I/Os protection
If a ground protection network is used and negative transients are present on the V
CC
line,
the control pins are pulled negative. ST suggests to insert a resistor (R
prot
) in li ne to prev ent
the microcontroller I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-V
CCpeak
/I
latchup
≤ R
prot
≤ (V
OHµC
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= -100 V and I
latchup
≥ 20 mA; V
OHµC
≥ 4.5 V
5k Ω ≤ R
prot
≤ 65 kΩ.
Recommended R
prot
value is 10 kΩ.
VN800PS-E Application information
Doc ID 15610 Rev 4 17/27
3.3 Electrical characteristics curves
Figure 10. Off-state output current Figure 11. H igh level input current
Figure 12. Status leakage current Figure 13. On-state resistance vs T
case
Figure 14. On-state resistance vs V
CC
Figure 15. Input high level
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
IL(off 1) (µA)
Off state
Vcc=36V
Vin=Vout=0V
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
1
2
3
4
5
6
7
8
Iih (µA)
Vin=3.25V
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
Ilstat (µA)
Vstat=Vcc=36V
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
50
100
150
200
250
300
350
400
Ron (mOhm)
Iout=0.5A
Vcc=8V; 13V; 36V
510152025303540
Vcc (V)
0
50
100
150
200
250
300
350
400
Ron (mOhm)
Iout=0.5A
Tc= - 40ºC
Tc= 25ºC
Tc= 150ºC
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
Vih (V)
Application information VN800PS-E
18/27 Doc ID 15610 Rev 4
Figure 16. Input low level Figure 17. Turn-on voltage slope
Figure 18. Overvoltage shutdown Figure 19. Input hysteresis voltage
Figure 20. Turn-off voltage slope Figure 21. I
LIM
vs T
case
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
Vil (V)
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
200
400
600
800
1000
1200
1400
1600
dVout/dt(on) (V/ms)
Vcc=24V
Rl=48Ohm
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
30
32
34
36
38
40
42
44
46
48
50
Vov (V)
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
Vhyst (V)
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
100
200
300
400
500
600
700
800
dVout/dt(off) (V/ms)
Vcc=24V
Rl=48Ohm
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
Ilim (A)
Vcc=24V
Rl=10mOhm
VN800PS-E Application information
Doc ID 15610 Rev 4 19/27
3.4 SO-8 maximum demagnetization energy
Figure 22. SO-8 maximum turn off current versus load inductance
Note: Legend
A = Single pulse at T
Jstart
=150ºC
B = Repetitive pulse at T
Jstart
=100ºC
C = Repetitive Pulse at T
Jstart
=125ºC
Conditions:
V
CC
=13.5V
Values are generated with R
L
=0Ω
In case of repeti ti ve pulse s, T
jstart
(at beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves B and C.
Figure 23. Demagnetization
0.1
1
10
1 10 100 1000
L(mH)
I
LMAX (A)
A
B
C
'HPDJQHWL]DWLRQ 'HPDJQHWL]DWLRQ 'HPDJQHWL]DWLRQ
W
9,1,/
*$3*&)7
Package and PCB thermal data VN800PS-E
20/27 Doc ID 15610 Rev 4
4 Package and PCB thermal data
4.1 SO-8 thermal data
Figure 24. SO-8 PC board
(1)
1. Layout condition of R
th
and Z
th
measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness = 2 mm,
Cu thickness = 35 µm, Copper areas: 0.14 cm
2
, 2 c m
2
).
Figure 25. SO-8 R
thj-amb
vs PCB copper area in open box free air condition
VN800PS-E Package and PCB thermal data
Doc ID 15610 Rev 4 21/27
Figure 26. SO-8 thermal impedance junction ambient single pulse
Figure 27. Thermal fitting model of a single channel HSD in SO-8
Equation 1 Pulse calculation formula
where
0.1
1
10
100
1000
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
ZT H (°C/W)
0.5 cm
2
2 cm
2
T_amb
C1
R1 R2
C2
R3
C3
R4
C4
R5
C5
R6
C6
Pd
Tj
ZTHδRTH δZTHtp 1δ–()+⋅=
δt
p
T⁄=
Package and PCB thermal data VN800PS-E
22/27 Doc ID 15610 Rev 4
Table 15. Thermal parameter
Area/island (cm
2
)0.142
R1 (°C/W) 0.24
R2 (°C/W) 1.2
R3 (°C/W) 4.5
R4 (°C/W) 21
R5 (°C/W) 16
R6 (°C/W) 58 28
C1 (W.s/°C) 0.00015
C2 (W.s/°C) 0.0005
C3 (W.s/°C) 7.50E-03
C4 (W.s/°C) 0.045
C5 (W.s/°C) 0.35
C6 (W.s/°C) 1.05 2
VN800PS-E Package and packing information
Doc ID 15610 Rev 4 23/27
5 Package and packing information
5.1 ECOPACK
®
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
5.2 SO-8
package infor mation
Table 16. SO-8 mechanical data
Dim. mm
Min. Typ. Max.
A 1.75
a1 0.1 0.25
a2 1.65
a3 0.65 0.85
b 0.35 0.48
b1 0.19 0.25
C0.25 0.5
c1 45
D 4.8 5
E 5.8 6.2
e1.27
e3 3.81
F3.8 4
L 0.4 1.27
M0.6
S 8
L1 0.8 1.2
Package and packing information VN800PS-E
24/27 Doc ID 15610 Rev 4
Figure 28. SO-8 package dimensions
001602 3 D
VN800PS-E Package and packing information
Doc ID 15610 Rev 4 25/27
5.3 SO-8
packi ng infor mati o n
The devices can be packed in tube or tape and reel shipments (see the Device summary on
page 1).
Figure 29. SO-8 tube shipment (no suffix)
Figure 30. SO-8 tape and reel shipment (suffix “TR”)
All dimensions are in mm.
Base Q.ty
100
Bulk Q.ty
2000
Tube length (± 0.5)
532
A
3.2
B
6
C (± 0.1)
0.6
C
B
A
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
All dimensions are in mm.
Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diam et er D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2
Top
cover
tape
End
Start
No componentsNo components Components
500mm min
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
REEL DIMENSIONS
All dimensions are in mm.
Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13
F20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4
Revision history VN800PS-E
26/27 Doc ID 15610 Rev 4
6 Revision history
Table 17. Document revision history
Date Revision Changes
21-Apr-2009 1 Initial release
31-May-2010 2 Updated Features list.
Updated Table 3: Absolute maximum r atings.
Reformatted entire document.
07-Feb-2011 3
Updated Features list.
Updated following tables:
–Table 4: Thermal data
–Table 16: SO-8 mechanical data
18-Sep-2013 4 Updated Disclaimer.
VN800PS-E
Doc ID 15610 Rev 4 27/27
Please Read Carefully:
Informa tion in this do cument is prov ided solely in connec tion with ST products. STMic roelect ronics NV and its subsidiari es (“ST”) reser ve the
right to mak e chang es, c or recti ons , modif ic ations or improv ement s, t o th is documen t, and the prod ucts an d servic es des crib ed he rein a t any
time, without notice.
All ST produ cts are sold purs uant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating t o the choice, sele ction or use of the ST products and se rvices described herein.
No license, express o r implied, by es toppel or otherwise, t o any intellectual property rights is granted under this doc ument. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST produ cts with provis ions different f rom the statement s and/or technic al features set forth in this document shall i mmediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liabili ty of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all informa tion previously supplied.
The ST logo is a registered t rademark of STMi croelectron ics. All other names are the propert y of their respective owners.
© 2013 STMicroelec tronics - All right s re se rv ed
STMicroelectronic s group of compani es
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - Unit ed States of Americ a
www.st.com