1
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
8-lead PDIP
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
8-lead SOIC
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
8-lead TSSOP
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
CS
SO
WP
GND
8-lead SAP
VCC
HOLD
SCK
SI
CS
SO
WP
GND
1
2
3
4
8
7
6
5
8-ball dBGA2
Bottom View
Bottom View
Features
•Serial Peripheral Interface (SPI) Compatible
•Supports SPI Modes 0 (0,0) and 3 (1,1)
•Data Sheet Describes Mode 0 Operation
•Low-voltage and Standard-voltage Operation
– 2.7 (VCC = 2.7V to 5.5V)
– 1.8 (VCC = 1.8V to 5.5V)
•20 MHz Clock Rate (5V)
•64-byte Page Mode and Byte Write Operation
•Block Write Protection
– Protect 1/4, 1/2, or Entire Array
•Write Protect (WP) Pin and Write Disable Instructions for
Both Hardware and Software Data Protection
•Self-timed Write Cycle (5 ms Max)
•High-reliability
– Endurance: 1 Million Write Cycles
– Data Retention: >100 Years
•Automotive Grade, Extended Temperature and Lead-free/Halogen-free
Devices Available
•8-lead PDIP, 8-lead EIAJ SOIC, 8-lead JEDEC SOIC, 8-lead TSSOP, 8-ball dBGA2 and
8-lead SAP Packages
•Die Sales: Wafer Form, Waffle Pack, and Bumped Die
Description
The AT25128A/256A provides 131,072/262,144 bits of serial electrically-erasable
programmable read only memory (EEPROM) organized as 16,384/32,768 words of
8 bits each. The device is optimized for use in many industrial and commercial appli-
cations where low-power and low-voltage operation are essential. The devices are
available in space saving 8-lead PDIP, 8-lead EIAJ SOIC, 8-lead JEDEC SOIC, 8-
lead TSSOP, 8-ball dBGA2 and 8-lead SAP packages. In addition, the entire family is
available in 2.7V (2.7V to 5.5V) and 1.8V (1.8V to 5.5V) versions.
The AT25128A/256A is enabled through the Chip Select pin (CS) and accessed via
a 3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO), and
Serial Clock (SCK). All programming cycles are completely self-timed, and no sepa-
rate Erase cycle is required before Write.
Table 1. Pin Configurations
Pin Name Function
CSChip Select
SCK Serial Data Clock
SISerial Data Input
SOSerial Data Output
GND Ground
VCC Power Supply
WP Write Protect
HOLD Suspends Serial Input
NC No Connect
3368H–SEEPR–8/05
SPI Serial
EEPROMs
128K (16,384 x 8)
256K (32,768 x 8)
AT25128A
AT25256A
2AT25128A/256A
3368H–SEEPR–8/05
Block Write protection is enabled by programming the status register with top ¼, top ½
or entire array of write protection. Separate Program Enable and Program Disable
instructions are provided for additional data protection. Hardware data protection is pro-
vided via the WP pin to protect against inadvertent write attempts to the status register.
The HOLD pin may be used to suspend any serial communication without resetting the
serial sequence.
Figure 1. Block Diagram
Note: 1. This parameter is characterized and is not 100% tested.
Absolute Maximum Ratings*
Operating Temperature......................................−55°C to +125°C*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions beyond those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect device reliability.
Storage Temperature .........................................−65°C to +150°C
Voltage on Any Pin
with Respect to Ground ........................................ −1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
16384/32768 x 8
Table 2. Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted)
Symbol Test Conditions Max Units Conditions
COUT Output Capacitance (SO) 8pF VOUT = 0V
CIN Input Capacitance (CS, SCK, SI, WP, HOLD)6pFV
IN = 0V
3
AT25128A/256A
3368H–SEEPR–8/05
Note: 1. VIL and VIH max are reference only and are not tested.
Table 3. DC Characteristics
Applicable over recommended operating range from TAI = −40°C to +85°C, VCC = +1.8V to +5.5V,
TAE = −40°C to +125°C, VCC = +1.8V to +5.5V(unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Units
VCC1 Supply Voltage 1.85.5 V
VCC2 Supply Voltage 2.7 5.5 V
VCC3Supply Voltage 4.5 5.5 V
ICC1 Supply Current VCC = 5.0V at 20 MHz, SO = Open,
Read9.0 10.0 mA
ICC2 Supply Current VCC = 5.0V at 10 MHz,
SO = Open, Read, Write 5.0 7.0 mA
ICC3Supply Current VCC = 5.0V at 1 MHz,
SO = Open, Read, Write 2.2 3.5 mA
ISB1 Standby Current VCC = 1.8V, C S = VCC 0.2 3.0 µA
ISB2 Standby Current VCC = 2.7V, CS = VCC 0.5 3.0 µA
ISB3Standby Current VCC = 5.0V, CS = VCC 2.0 5.0 µA
IIL Input Leakage VIN = 0V to VCC −3.0 3.0 µA
IOL Output Leakage VIN = 0V to VCC, TAC = 0°C to 70°C−3.0 3.0 µA
VIL(1) Input Low-voltage −1.0 VCC x 0.3V
VIH(1) Input High-voltage VCC x 0.7 VCC + 0.5 V
VOL1 Output Low-voltage 3.6 ≤ VCC ≤ 5.5V IOL = 3.0 mA 0.4 V
VOH1 Output High-voltage IOH = −1.6 mA VCC −0.8V
VOL2 Output Low-voltage 1.8V ≤ VCC ≤ 3.6V IOL = 0.15 mA 0.2 V
VOH2 Output High-voltage IOH = −100 µA VCC −0.2 V
Table 4. AC Characteristics
Applicable over recommended operating range from TAI = −40°C to + 85°C, TAE = −40°C to +125°C, VCC = As Specified,
CL = 1 TTL Gate and 30 pF (unless otherwise noted)
Symbol Parameter Voltage Min Max Units
fSCK SCK Clock Frequency
4.5−5.5
2.7−5.5
1.8−5.5
0
0
0
20
10
5
MHz
tRI Input Rise Time
4.5−5.5
2.7−5.5
1.8−5.5
2
2
2
µs
tFI Input Fall Time
4.5−5.5
2.7−5.5
1.8−5.5
2
2
2
µs
tWH SCK High Time
4.5−5.5
2.7−5.5
1.8−5.5
20
40
80
ns
4AT25128A/256A
3368H–SEEPR–8/05
Note: 1. This parameter is characterized and is not 100% tested. Contact Atmel for further information.
tWL SCK Low Time
4.5−5.5
2.7−5.5
1.8−5.5
20
40
80
ns
tCSCS High Time
4.5−5.5
2.7−5.5
1.8−5.5
100
100
200
ns
tCSS CS Setup Time
4.5−5.5
2.7−5.5
1.8−5.5
100
100
200
ns
tCSHCS Hold Time
4.5−5.5
2.7−5.5
1.8−5.5
100
100
200
ns
tSUData In Setup Time
4.5−5.5
2.7−5.5
1.8−5.5
5
10
20
ns
tH Data In Hold Time
4.5−5.5
2.7−5.5
1.8−5.5
5
10
20
ns
tHD Hold Setup Time
4.5−5.5
2.7−5.5
1.8−5.5
5
10
20
ns
tCD Hold Hold Time
4.5−5.5
2.7−5.5
1.8−5.5
5
10
20
ns
tVOutput Valid
4.5−5.5
2.7−5.5
1.8−5.5
0
0
0
20
40
80
ns
tHO Output Hold Time
4.5−5.5
2.7−5.5
1.8−5.5
0
0
0
ns
tLZ Hold to Output Low Z
4.5−5.5
2.7−5.5
1.8−5.5
0
0
0
25
50
100
ns
tHZ Hold to Output High Z
4.5−5.5
2.7−5.5
1.8−5.5
25
50
100
ns
tDISOutput Disable Time
4.5−5.5
2.7−5.5
1.8−5.5
25
50
100
ns
tWC Write Cycle Time
4.5−5.5
2.7−5.5
1.8−5.5
5
5
5
ms
Endurance(1) 5.0V, 25°C, Page Mode 1M Write Cycles
Table 4. AC Characteristics (Continued)
Applicable over recommended operating range from TAI = −40°C to + 85°C, TAE = −40°C to +125°C, VCC = As Specified,
CL = 1 TTL Gate and 30 pF (unless otherwise noted)
Symbol Parameter Voltage Min Max Units
5
AT25128A/256A
3368H–SEEPR–8/05
Serial Interface
Description
MASTER: The device that generates the serial clock.
SLAVE: Because the serial clock pin (SCK) is always an input, the AT25128A/256A
always operates as a slave.
TRANSMITTER/RECEIVER: The AT25128A/256A has separate pins designated for
data transmission (SO) and reception (SI).
MSB: The Most Significant Bit (MSB) is the first bit transmitted and received.
SERIAL OP-CODE: After the device is selected with CS going low, the first byte will
be received. This byte contains the op-code that defines the operations to be performed.
INVALID OP-CODE: If an invalid op-code is received, no data will be shifted into the
AT25128A/256A, and the serial output pin (SO) will remain in a high impedance state
until the falling edge of CS is detected again. This will reinitialize the serial
communication.
CHIP SELECT: The AT25128A/256A is selected when the CS pin is low. When the
device is not selected, data will not be accepted via the SI pin, and the serial output pin
(SO) will remain in a high impedance state.
HOLD: The HOLD pin is used in conjunction with the CS pin to select the
AT25128A/256A. When the device is selected and a serial sequence is underway,
HOLD can be used to pause the serial communication with the master device without
resetting the serial sequence. To pause, the HOLD pin must be brought low while the
SCK pin is low. To resume serial communication, the HOLD pin is brought high while the
SCK pin is low (SCK may still toggle during HOLD). Inputs to the SI pin will be ignored
while the SO pin is in the high impedance state.
WRITE PROTECT: The write protect pin (WP) will allow normal read/write operations
when held high. When the WP pin is brought low and WPEN bit is “1”, all write opera-
tions to the status register are inhibited. WP going low while CS is still low will interrupt a
write to the status register. If the internal write cycle has already been initiated, WP
going low will have no effect on any write operation to the status register. The WP pin
function is blocked when the WPEN bit in the status register is “0”. This will allow the
user to install the AT25128A/256A in a system with the WP pin tied to ground and still be
able to write to the status register. All WP pin functions are enabled when the WPEN bit
is set to “1”.
6AT25128A/256A
3368H–SEEPR–8/05
Figure 2. SPI Serial Interface
AT25128A/256A
7
AT25128A/256A
3368H–SEEPR–8/05
Functional
Description
The AT25128A/256A is designed to interface directly with the synchronous serial
peripheral interface (SPI) of the 6800 type series of microcontrollers.
The AT25128A/256A utilizes an 8-bit instruction register. The list of instructions and
their operation codes are contained in see Table 5. All instructions, addresses, and data
are transferred with the MSB first and start with a high-to-low CS transition.
WRITE ENABLE (WREN): The device will power-up in the write disable state when VCC
is applied. All programming instructions must therefore be preceded by a Write Enable
instruction.
WRITE DISABLE (WRDI): To protect the device against inadvertent writes, the Write
Disable instruction disables all programming modes. The WRDI instruction is indepen-
dent of the status of the WP pin.
READ STATUS REGISTER (RDSR): The Read Status Register instruction provides
access to the status register. The Ready/Busy and Write Enable status of the device
can be determined by the RDSR instruction. Similarly, the Block Write Protection bits
indicate the extent of protection employed. These bits are set by using the WRSR
instruction.
Table 5. Instruction Set for the AT25128A/256A
Instruction Name Instruction Format Operation
WREN 0000 X110 Set Write Enable Latch
WRDI 0000 X100 Reset Write Enable Latch
RDSR 0000 X101 Read Status Register
WRSR 0000 X001 Write Status Register
READ 0000 X011 Read Data from Memory Array
WRITE 0000 X010 Write Data to Memory Array
Table 6. Status Register Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
WPEN X X X BP1 BP0 WEN RDY
Table 7. Read Status Register Bit Definition
Bit Definition
Bit 0 (RDY) Bit 0 = “0” (RDY) indicates the device is ready.
Bit 0 = “1” indicates the write cycle is in progress.
Bit 1 (WEN) Bit 1 = 0 indicates the device is not write enabled. Bit 1 = “1” indicates
the device is write enabled.
Bit 2 (BP0) See Table 8 on page 8.
Bit 3 (BP1) See Table 8 on page 8.
Bits 4 − 6 are 0s when device is not in an internal write cycle.
Bit 7 (WPEN) See Table 9 on page 8.
Bits 0 − 7 are “1”s during an internal write cycle.
8AT25128A/256A
3368H–SEEPR–8/05
WRITE STATUS REGISTER (WRSR): The WRSR instruction allows the user to select
one of four levels of protection. The AT25128A/256A is divided into four array segments.
Top quarter (1/4), top half (1/2), or all of the memory segments can be protected. Any of
the data within any selected segment will therefore be read only. The block write protec-
tion levels and corresponding status register control bits are shown in Table 8.
The three bits, BP0, BP1, and WPEN are nonvolatile cells that have the same properties
and functions as the regular memory cells (e.g. WREN, tWC, RDSR).
The WRSR instruction also allows the user to enable or disable the write protect (WP)
pin through the use of the write protect enable (WPEN) bit. Hardware write protection is
enabled when the WP pin is low and the WPEN bit is “1”. Hardware write protection is
disabled when either the WP pin is high or the WPEN bit is “0”. When the device is hard-
ware write protected, writes to the Status Register, including the Block Protect bits and
the WPEN bit, and the block-protected sections in the memory array are disabled.
Writes are only allowed to sections of the memory which are not block-protected.
NOTE: When the WPEN bit is hardware write protected, it cannot be changed back to
“0”, as long as the WP pin is held low.
READ SEQUENCE (READ): Reading the AT25128A/256A via the SO pin requires the
following sequence. After the CS line is pulled low to select a device, the Read op-code
is transmitted via the SI line followed by the byte address to be read (see Table 10 on
page 9). Upon completion, any data on the SI line will be ignored. The data (D7 - D0) at
the specified address is then shifted out onto the SO line. If only one byte is to be read,
the CS line should be driven high after the data comes out. The read sequence can be
continued since the byte address is automatically incremented and data will continue to
be shifted out. When the highest address is reached, the address counter will roll over to
the lowest address allowing the entire memory to be read in one continuous read cycle.
Table 8. Block Write Protect Bits
Level
Status Register Bits Array Addresses Protected
BP1 BP0 AT25128A AT25256A
0 0 0 None None
1(1/4) 0 1 3000 – 3FFF 6000 – 7FFF
2(1/2) 1 0 2000 – 3FFF 4000 – 7FFF
3(All) 1 1 0000 – 3FFF 0000 – 7FFF
Table 9. WPEN Operation
WPEN WP WEN
Protected
Blocks
Unprotected
Blocks
Status
Register
0 X 0 Protected Protected Protected
0X1Protected Writable Writable
1 Low 0 Protected Protected Protected
1Low1 Protected Writable Protected
X High 0 Protected Protected Protected
X High 1 Protected Writable Writable
9
AT25128A/256A
3368H–SEEPR–8/05
WRITE SEQUENCE (WRITE): In order to program the AT25128A/256A, two separate
instructions must be executed. First, the device must be write enabled via the Write
Enable (WREN) Instruction. Then a Write instruction may be executed. Also, the
address of the memory location(s) to be programmed must be outside the protected
address field location selected by the Block Write Protection Level. During an internal
write cycle, all commands will be ignored except the RDSR instruction.
A Write Instruction requires the following sequence. After the CS line is pulled low to
select the device, the Write op-code is transmitted via the SI line followed by the byte
address and the data (D7 - D0) to be programmed (see Table 10). Programming will
start after the CS pin is brought high. (The Low-to-High transition of the CS pin must
occur during the SCK low time immediately after clocking in the D0 (LSB) data bit.
The Ready/Busy status of the device can be determined by initiating a Read Status
Register (RDSR) Instruction. If Bit 0 = 1, the Write cycle is still in progress. If Bit 0 = 0,
the Write cycle has ended. Only the Read Status Register instruction is enabled during
the Write programming cycle.
The AT25128A/256A is capable of a 64-byte Page Write operation. After each byte of
data is received, the six low order address bits are internally incremented by one; the
high order bits of the address will remain constant. If more than 64 bytes of data are
transmitted, the address counter will roll over and the previously written data will be
overwritten. The AT25128A/256A is automatically returned to the write disable state at
the completion of a Write cycle.
NOTE: If the device is not write enabled (WREN), the device will ignore the Write
instruction and will return to the standby state, when CS is brought high. A new CS fall-
ing edge is required to re-initiate the serial communication.
Table 10. Address Key
Address AT25128A AT25256A
ANA13 − A0A14 − A0
Don’t Care Bits A15 − A14 A15
10 AT25128A/256A
3368H–SEEPR–8/05
Timing Diagrams (for SPI Mode 0 (0, 0))
Figure 3. Synchronous Data Timing
Figure 4. WREN Timing
Figure 5. WRDI Timing
SO
V
OH
V
OL
HI-Z HI-Z
t
V
VALID IN
SI
V
IH
V
IL
t
H
t
SU
t
DIS
SCK
V
IH
V
IL
t
WH
t
CSH
CS
V
IH
V
IL
t
CSS
t
CS
t
WL
t
HO
11
AT25128A/256A
3368H–SEEPR–8/05
Figure 6. RDSR Timing
Figure 7. WRSR Timing
Figure 8. READ Timing
CS
SCK
0123456789 1011121314
SIINSTRUCTION
SO
76543210
DATA OUT
MSB
HIGH IMPEDANCE
15
12 AT25128A/256A
3368H–SEEPR–8/05
Figure 9. WRITE Timing
Figure 10. HOLD Timing
SO
SCK
HOLD
tCD
tHD
tHZ
tLZ
tCD
tHD
CS
13
AT25128A/256A
3368H–SEEPR–8/05
Notes: 1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics
tables.
2. “U” designates Green package + RoHS compliant.
3.Available in waffle pack and wafer form; order as SL719 for wafer form. Bumped die available upon request. Please Contact
Serial EEPROM Marketing.
AT25128A Ordering Information(1)
Ordering Code Package Operation Range
AT25128A-10PI-2.7
AT25128AN-10SI-2.7
AT25128AW-10SI-2.7
AT25128A-10TI-2.7
8P3
8S1
8S2
8A2
Industrial Temperature
(−40°C to 85°C)
AT25128A-10PI-1.8
AT25128AN-10SI-1.8
AT25128AW-10SI-1.8
AT25128A-10TI-1.8
8P3
8S1
8S2
8A2
Industrial Temperature
(−40°C to 85°C)
AT25128A-10PU-2.7(2)
AT25128A-10PU-1.8(2)
AT25128AN-10SU-2.7(2)
AT25128AN-10SU-1.8(2)
AT25128AW-10SU-2.7(2)
AT25128AW-10SU-1.8(2)
AT25128A-10TU-2.7(2)
AT25128A-10TU-1.8(2)
AT25128AU2-10UU-1.8(2)
AT25128AY4-10YU-1.8(2)
8P3
8P3
8S1
8S1
8S2
8S2
8A2
8A2
8U2-1
8Y4
Lead-free/Halogen-free/
Industrial Temperature
(−40°C to 85°C)
AT25128A-W2.7-11(3)
AT25128A-W1.8-11(3)
Die Sale
Die Sale
Industrial Temperature
(−40°C to 85°C)
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual In-line Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8S2 8-lead, 0.200" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8U2-1 8-ball, die Ball Grid Array Package (dBGA2)
8A2 8-lead, 4.4 mm Body, Thin Shrink Small Outline Package (TSSOP)
8Y4 8-lead, 6.00 mm x 4.90 mm Body, Dual Footprint, Non-leaded, Small Array Package (SAP)
Options
−2.7 Low-voltage (2.7V to 5.5V)
−1.8 Low-voltage (1.8V to 5.5V)
14 AT25128A/256A
3368H–SEEPR–8/05
Notes: 1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC Characteristics
tables.
2. “U” designates Green package + RoHS compliant.
3.Available in waffle pack and wafer form; order as SL719 for wafer form. Bumped die available upon request. Please contact
Serial EEPROM Marketing.
AT25256A Ordering Information(1)
Ordering Code Package Operation Range
AT25256A-10PI-2.7
AT25256AN-10SI-2.7
AT25256AW-10SI-2.7
AT25256A-10TI-2.7
8P3
8S1
8S2
8A2
Industrial Temperature
(−40°C to 85°C)
AT25256A-10PI-1.8
AT25256AN-10SI-1.8
AT25256AW-10SI-1.8
AT25256A-10TI-1.8
8P3
8S1
8S2
8A2
Industrial Temperature
(−40°C to 85°C)
AT25256A-10PU-2.7(2)
AT25256A-10PU-1.8(2)
AT25256AN-10SU-2.7(2)
AT25256AN-10SU-1.8(2)
AT25256AW-10SU-2.7(2)
AT25256AW-10SU-1.8(2)
AT25256A-10TU-2.7(2)
AT25256A-10TU-1.8(2)
AT25256AU2-10UU-1.8(2)
AT25256AY4-10YU-1.8(2)
8P3
8P3
8S1
8S1
8S2
8S2
8A2
8A2
8U2-1
8Y4
Lead-free/Halogen-free/
Industrial Temperature
(−40°C to 85°C)
AT25256A-W2.7-11(3)
AT25256A-W1.8-11(3)
Die Sale
Die Sale
Industrial Temperature
(−40°C to 85°C)
Package Type
8P3 8-lead, 0.300" Wide, Plastic Dual In-line Package (PDIP)
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8S2 8-lead, 0.200" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8U2-1 8-ball, die Ball Grid Array Package (dBGA2)
8A2 8-lead, 4.4 mm Body, Thin Shrink Small Outline Package (TSSOP)
8Y4 8-lead, 6.00 mm x 4.90 mm Body, Dual Footprint, Non-leaded, Small Array Package (SAP)
Options
−2.7 Low-voltage (2.7V to 5.5V)
−1.8 Low-voltage (1.8V to 5.5V)
15
AT25128A/256A
3368H–SEEPR–8/05
Packaging Information
8P3 – PDIP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
01/09/02
8P3 B
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA, for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
COMMON DIMENSIONS
(Unit of Measure = inches)
SYMBOL MIN NOM MAX NOTE
D
D1
E
E1
e
L
b2
b
A2 A
1
N
eA
c
b3
4 PLCS
A
–
–
0.210 2
A2 0.115 0.130 0.195
b 0.014 0.018 0.022 5
b2 0.045 0.060 0.070 6
b3 0.030 0.039 0.045 6
c 0.008 0.010 0.014
D 0.355 0.365 0.400 3
D1 0.005
–
–
3
E 0.300 0.310 0.325 4
E1 0.240 0.250 0.280 3
e 0.100 BSC
eA 0.300 BSC 4
L 0.115 0.130 0.150 2
Top View
Side View
End View
16 AT25128A/256A
3368H–SEEPR–8/05
8S1 – JEDEC SOIC
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE DRAWING NO.
R
REV.
Note:
10/7/03
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC) 8S1 B
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A1 0.10 – 0.25
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
A 1.35 – 1.75
b 0.31 – 0.51
C 0.17 – 0.25
D 4.80 – 5.00
E1 3.81 – 3.99
E 5.79 – 6.20
e 1.27 BSC
L 0.40 – 1.27
∅ 0˚ – 8˚
∅
Top View
End View
Side View
eB
D
A
A1
N
E
1
C
E1
L
17
AT25128A/256A
3368H–SEEPR–8/05
8S2 – EIAJ SOIC
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
10/7/03
8S2 C
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs are not included.
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
4. Determines the true geometric position.
5. Values b and C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/−0.005 mm.
A 1.70 2.16
A1 0.05 0.25
b 0.35 0.48 5
C 0.15 0.35 5
D 5.13 5.35
E1 5.18 5.40 2, 3
E 7.70 8.26
L 0.51 0.85
∅
0° 8°
e 1.27 BSC 4
End View
Side View
eb
A
A1
D
E
N
1
C
E1
∅
L
Top View
18 AT25128A/256A
3368H–SEEPR–8/05
8U2-1 – dBGA2
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE DRAWING NO.
R
REV.
PO8U2-1
A
6/24/03
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
8U2-1, 8-ball, 2.35 x 3.73 mm Body, 0.75 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
A 0.81 0.91 1.00
A1 0.15 0.20 0.25
A2 0.40 0.45 0.50
b 0.25 0.30 0.35 1
D 2.35 BSC
E 3.73 BSC
e 0.75 BSC
e1 0.74 REF
d 0.75 BSC
d1 0.80 REF
1. Dimension 'b' is measured at the maximum solder ball diameter.
This drawing is for general information only.
d
A
Side View
Top View
Bottom View
8 Solder Balls
1
A
B
C
D
2
(e1)
e
A1 BALL PAD CORNER
(d1)
1. b
A1
A2
D
A1 BALL PAD CORNER
E
19
AT25128A/256A
3368H–SEEPR–8/05
8A2 – TSSOP
2325 Orchard Parkway
San Jose, CA 95131
TITLE DRAWING NO.
R
REV.
5/30/02
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
D 2.90 3.00 3.10 2, 5
E 6.40 BSC
E1 4.30 4.40 4.50 3, 5
A – – 1.20
A2 0.80 1.00 1.05
b 0.19 – 0.30 4
e 0.65 BSC
L 0.45 0.60 0.75
L1 1.00 REF
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
8A2 B
Side View
End View
Top View
A2
A
L
L1
D
123
E1
N
b
Pin 1 indicator
this corner
E
e
20 AT25128A/256A
3368H–SEEPR–8/05
8Y4 – SAP
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE DRAWING NO.
R
REV.
8Y4, 8-lead (6.00 x 4.90 mm Body) SOIC Array Package
(SAP) Y4 A
8Y4
5/24/04
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN NOM MAX NOTE
A – – 0.90
A1 0.00 – 0.05
D 5.80 6.00 6.20
E 4.70 4.90 5.10
D1 2.85 3.00 3.15
E1 2.85 3.00 3.15
b 0.35 0.40 0.45
e 1.27 TYP
e1 3.81 REF
L 0.50 0.60 0.70
A
EA1
b
PIN 1 INDEX AREA
D
A
PIN 1 ID
E1
D1
L
e
e1
Printed on recycled paper.
3368H–SEEPR–8/05
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