2009-08-18
Page 1
Rev. 2.1
BSP296
SIPMOS Small-Signal-Transistor
Product Summary
V
DS
100 V
R
DS(on)
0.7 Ω
I
D
1.1 A
Feature
• N-Channel
• Enhancement mode
• Logic Level
•dv/dtrated
PG-SOT223
VPS05163
123
4
Marking
BSP296
Type Package Tape and Reel Information
BSP296 PG-SOT223 L6433: 4000 pcs/reel
Maximum Ratings, at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
1.1
0.88
A
Pulsed drain current
T
A
=25°C
I
D puls
4.4
Reverse diode dv/dt
I
S
=1.1A, V
DS
=80V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
6 kV/µs
Gate source voltage V
GS
±20 V
ESD (JESD22-A114-HBM) 1B (>500V, <1000V)
Power dissipation
T
A
=25°C
P
tot
1.79 W
Operating and storage temperature T
j,
T
stg
-55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Pb-free lead plating; RoHS compliant
•
BSP296
BSP296 PG-SOT223 L6327: 1000 pcs/reel
x Qualified according to AEC Q101
Packaging
Non dry
Non dry
Rev. 2.1
BSP296
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4) R
thJS
- - 25 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
--
-115
70
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=250µA
V
(BR)DSS
100 - - V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=400µA
V
GS(th)
0.8 1.4 1.8
Zero gate voltage drain current
V
DS
=100V, V
GS
=0, T
j
=25°C
V
DS
=100V, V
GS
=0, T
j
=150°C
I
DSS
-
--
-0.1
50
µA
Gate-source leakage current
V
GS
=20V, V
DS
=0
I
GSS
- 10 100 nA
Drain-source on-state resistance
V
GS
=4.5V, I
D
=0.95A
R
DS(on)
- 0.62 1 Ω
Drain-source on-state resistance
V
GS
=10V, I
D
=1.1A
R
DS(on)
- 0.43 0.7
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2009-08-18
Page 2
Rev. 2.1
BSP296
Electrical Characteristics, at
T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.88A
0.6 1.2 - S
Input capacitance C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
- 291 364 pF
Output capacitance C
oss
- 53 66
Reverse transfer capacitance C
rss
- 29 36
Turn-on delay time t
d(on)
V
DD
=50V, V
GS
=10V,
I
D
=1.1A, R
G
=6Ω
- 5.2 7.8 ns
Rise time t
r
- 7.9 11.8
Turn-off delay time t
d(off)
- 37.4 56.1
Fall time t
f
- 21.4 32.1
Gate Charge Characteristics
Gate to source charge Q
gs
V
DD
=80V, I
D
=1.1A
- 0.7 0.9 nC
Gate to drain charge Q
gd
- 5 7.5
Gate charge total Q
gV
DD
=80V, I
D
=1.1A,
V
GS
=0 to 10V
- 13.8 17.2
Gate plateau voltage V
(plateau)
V
DD
=80V, I
D
= 1.1 A
- 2.7 - V
Reverse Diode
Inverse diode continuous
forward current I
ST
A
=25°C
- - 1.1 A
Inv. diode direct current, pulsed
I
SM
- - 4.4
Inverse diode forward voltage V
SD
V
GS
=0, I
F
= I
S
- 0.82 1.2 V
Reverse recovery time t
rr
V
R
=50V, I
F=
l
S
,
di
F
/dt=100A/µs
- 44.3 55.4 ns
Reverse recovery charge Q
rr
- 71.9 89.8 nC
2009-08-18
Page 3
Rev. 2.1
BSP296
1 Power dissipation
P
tot
= f(
T
A
)
0 20 40 60 80 100 120
°C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9
BSP296
P
tot
2 Drain current
I
D
=f(
T
A
)
parameter: V
GS
≥ 10 V
0 20 40 60 80 100 120
°C
160
T
A
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
A
1.3
BSP296
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
A
= 25 °C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
A
BSP296
I
D
R
DS(on)
=V
DS
/I
D
DC
10 ms
1 ms
tp = 120.0µs
4 Transient thermal impedance
Z
thJA
= f(t
p
)
parameter : D=t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP296
Z
thJA
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
2009-08-18
Page 4
Rev. 2.1
BSP296
5 Typ. output characteristic
I
D
= f (
V
DS
)
parameter: T
j
= 25 °C, V
GS
0 0.5 1 1.5 2
V
3
V
DS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
A
2
I
D
2.1V
2.5V
2.7V
3.1V
3.7V
3.9V
4.1V
4.3V
4.5V
10V
6 Typ. drain-source on resistance
R
DS(on)
= f(I
D
)
parameter: T
j
= 25 °C,
V
GS
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
A
2
I
D
0.2
0.5
0.8
1.1
1.4
Ω
2
R
DS(on)
2.1V 2.5V 2.7V 3.1V
3.7V
3.9V
4.5V
5V
6V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: T
j
= 25 °C
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2
V
4
V
GS
0
0.4
0.8
1.2
A
2
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 °C
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
A
2
I
D
0
0.4
0.8
1.2
S
2
g
fs
2009-08-18
Page 5
Rev. 2.1
BSP296
9 Drain-source on-state resistance
R
DS(on)
= f(T
j
)
parameter : I
D
= 1.1 A,
V
GS
= 10 V
-60 -20 20 60 100
°C
180
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
Ω
2.8
BSP296
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (Tj)
parameter: V
GS
= V
DS;
I
D
=400µA
-60 -20 20 60 100
°C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f(
V
DS
)
parameter:
V
GS
=0, f=1 MHz, T
j
= 25 °C
0 5 10 15 20
V
30
V
DS
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
-2
10
-1
10
0
10
1
10
A
BSP296
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
2009-08-18
Page 6
Rev. 2.1
BSP296
13 Typ. gate charge
V
GS
=f (Q
G
); parameter: V
DS
,
I
D
= 1.1 A pulsed, T
j
= 25 °C
0 2 4 6 8 10 12 14 16 18
nC
21
Q
G
0
2
4
6
8
10
12
V
16
BSP296
V
GS
0.2 V
DS max
0.5 V
DS max
0.8 V
DS max
14 Drain-source breakdown voltage
V
(BR)DSS
= f(
T
j
)
-60 -20 20 60 100
°C
180
T
j
90
92
94
96
98
100
102
104
106
108
110
112
114
V
120
BSP296
V
(BR)DSS
2009-08-18
Page 7
2009-08-18
Page 8
Rev. 2.1
BSP296
