TK40M60U(F) - TOSHIBA - Product.Network

TK40M60U

MOSFETs Silicon N-Channel MOS (DTMOS)

TK40M60U

Start of commercial production

2010-08

1. Applications

Applications

• Switching Voltage Regulators

2. Features

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.065 Ω (typ.)

(2) High forward transfer admittance: |Yfs| = 30 S (typ.)

(3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)

(4) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

Packaging and Internal Circuit

TO-3P(N)IS

1: Gate (G)

2: Drain (D)

3: Source (S)

4. Absolute Maximum Ratings (Note) (T

Absolute Maximum Ratings (Note) (T

Absolute Maximum Ratings (Note) (Ta

a = 25

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature

(Tc = 25)

(Note 1)

(Note 2)

(Note 3)

Symbol

VDSS

VGSS

IDP

EAS

IAR

EAR

Tch

Tstg

Rating

600

±30

540

150

-55 to 150

Unit



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2013-12-26

Rev.4.0

TK40M60U

5. Thermal Characteristics

Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Symbol

Rth(ch-c)

Rth(ch-a)

Max

1.38

41.6

Unit

/W

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = 90 V, Tch = 25 (initial), L = 2.36 mH, RG = 25 Ω, IAR = 20 A

Note 3: Repetitive rating; pulse width limited by maximum channel temperature

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2013-12-26

Rev.4.0

TK40M60U

6. Electrical Characteristics

Electrical Characteristics

6.1.

6.1. Static Characteristics (T

Static Characteristics (T

Static Characteristics (Ta

a = 25

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

Forward transfer admittance

Symbol

IGSS

IDSS

V(BR)DSS

Vth

RDS(ON)

|Yfs|

Test Condition

VGS = ±30 V, VDS = 0 V

VDS = 600 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 20 A

VDS = 10 V, ID = 20 A

Min



600

3.0



7.5

Typ.



0.065

Max

±1

100



5.0

0.08



Unit

µA

Ω

6.2.

6.2. Dynamic Characteristics (T

Dynamic Characteristics (T

Dynamic Characteristics (Ta

a = 25

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

Symbol

Ciss

Crss

Coss

ton

toff

Test Condition

VDS = 10 V, VGS = 0 V, f = 0.1 MHz

See Figure 6.2.1.

Min



Typ.

3400

180

7800

120

160

Max



Unit

Fig.

Fig. 6.2.1

6.2.1

6.2.1 Switching Time Test Circuit

Switching Time Test Circuit

6.3.

6.3. Gate Charge Characteristics (T

Gate Charge Characteristics (T

Gate Charge Characteristics (Ta

a = 25

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Total gate charge (gate-source plus

gate-drain)

Gate-source charge

Gate-drain charge

Symbol

Qgs

Qgd

Test Condition

VDD ≈ 400 V, VGS = 10 V, ID = 40 A

Min



Typ.

Max



Unit

6.4.

6.4. Source-Drain Characteristics (T

Source-Drain Characteristics (T

Source-Drain Characteristics (Ta

a = 25

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Reverse drain current (DC)

Reverse drain current (pulsed)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

(Note 1)

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition



IDR = 40 A, VGS = 0 V

-dIDR/dt = 100 A/µs

Min



Typ.



520

Max

-1.7



Unit

µC

2013-12-26

Rev.4.0

TK40M60U

7. Marking (Note)

Marking (Note)

Fig.

Fig. 7.1

7.1

7.1 Marking

Marking

Note: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the

restriction of the use of certain hazardous substances in electrical and electronic equipment.

2013-12-26

Rev.4.0

TK40M60U

8. Characteristics Curves (Note)

Characteristics Curves (Note)

Fig.

Fig. 8.1

8.1

8.1 I

D - V

- V

- VDS

DS Fig.

Fig.

Fig. 8.2

8.2

8.2 I

D - V

- V

- VDS

Fig.

Fig. 8.3

8.3

8.3 I

D - V

- V

- VGS

GS Fig.

Fig.

Fig. 8.4

8.4

8.4 V

VDS

DS - V

- V

- VGS

Fig.

Fig. 8.5

8.5

8.5 |Y

|Yfs

fs| - I

| - I

| - ID

DFig.

Fig.

Fig. 8.6

8.6

8.6 R

RDS(ON)

DS(ON)

DS(ON) - I

- I

- ID

2013-12-26

Rev.4.0

TK40M60U

Fig.

Fig. 8.7

8.7

8.7 R

RDS(ON)

DS(ON)

DS(ON) - T

- T

- Ta

aFig.

Fig.

Fig. 8.8

8.8

8.8 I

IDR

DR - V

- V

- VDS

Fig.

Fig. 8.9

8.9

8.9 C - V

C - V

C - VDS

DS Fig.

Fig.

Fig. 8.10

8.10

8.10 V

Vth

th - T

- T

- Ta

Fig.

Fig. 8.11

8.11

8.11 P

D - T

- T

- Tc

(Guaranteed Maximum)

Fig.

Fig. 8.12

8.12

8.12 Dynamic Input/Output Characteristics

Dynamic Input/Output Characteristics

2013-12-26

Rev.4.0

TK40M60U

Fig.

Fig. 8.13

8.13

8.13 r

rth

th/R

/Rth(ch-c)

th(ch-c)

th(ch-c) - t

- t

- tw

(Guaranteed Maximum)

Fig.

Fig. 8.14

8.14

8.14 Safe Operating Area

Safe Operating Area

(Guaranteed Maximum)

Fig.

Fig. 8.15

8.15

8.15 E

EAS

AS - T

- T

- Tch

(Guaranteed Maximum)

Fig.

Fig. 8.16

8.16

8.16 Test Circuit/Waveform

Test Circuit/Waveform

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

2013-12-26

Rev.4.0

TK40M60U

Package Dimensions

Unit: mm

Weight: 5.8 g (typ.)

Package Name(s)

TOSHIBA: 2-16F1S

Nickname: TO-3P(N)IS

2013-12-26

Rev.4.0

TK40M60U

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in this document, and related hardware, software and systems (collectively "Product") without notice.

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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which

minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage

to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate

the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA

information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the

precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application

with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,

including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating

and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample

application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.

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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING

TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING

AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

2013-12-26

Rev.4.0