TK40M60U MOSFETs Silicon N-Channel MOS (DTMOS) TK40M60U 1. Applications * Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.065 (typ.) (2) High forward transfer admittance: |Yfs| = 30 S (typ.) (3) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) (4) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-3P(N)IS unless otherwise specified) 25 4. Absolute Maximum Ratings (Note) (Ta = 25 Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS 30 Drain current (DC) (Note 1) ID 40 Drain current (pulsed) (Note 1) IDP 80 PD 90 W (Note 2) EAS 540 mJ IAR 20 A (Note 3) EAR 9 mJ Power dissipation (Tc = 25) Single-pulse avalanche energy Avalanche current Repetitive avalanche energy A Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1 2010-08 2013-12-26 Rev.4.0 TK40M60U 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 1.38 /W Channel-to-ambient thermal resistance Rth(ch-a) 41.6 Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 2.36 mH, RG = 25 , IAR = 20 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2013-12-26 Rev.4.0 TK40M60U 6. Electrical Characteristics unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Symbol Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Test Condition IGSS VGS = 30 V, VDS = 0 V IDSS VDS = 600 V, VGS = 0 V Min Typ. Max Unit 1 A 100 V(BR)DSS ID = 10 mA, VGS = 0 V 600 V Vth VDS = 10 V, ID = 1 mA 3.0 5.0 Drain-source on-resistance RDS(ON) VGS = 10 V, ID = 20 A 0.065 0.08 Forward transfer admittance |Yfs| VDS = 10 V, ID = 20 A 7.5 30 S Min Typ. Max Unit 3400 pF 180 7800 60 unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Symbol Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Test Condition VDS = 10 V, VGS = 0 V, f = 0.1 MHz Switching time (rise time) tr Switching time (turn-on time) ton 120 tf 13 toff 160 Switching time (fall time) Switching time (turn-off time) See Figure 6.2.1. ns Fig. 6.2.1 Switching Time Test Circuit unless otherwise specified) 25 6.3. Gate Charge Characteristics (Ta = 25 Characteristics Symbol Total gate charge (gate-source plus gate-drain) Qg Test Condition VDD 400 V, VGS = 10 V, ID = 40 A Min Typ. Max Unit 55 nC Gate-source charge Qgs 37 Gate-drain charge Qgd 18 Min Typ. Max Unit 40 A unless otherwise specified) 6.4. Source-Drain Characteristics (Ta = 25 25 Characteristics Symbol Reverse drain current (DC) (Note 1) Reverse drain current (pulsed) (Note 1) Test Condition IDR IDRP 80 Diode forward voltage VDSF IDR = 40 A, VGS = 0 V -1.7 V Reverse recovery time trr 520 ns Reverse recovery charge Qrr IDR = 40 A, VGS = 0 V -dIDR/dt = 100 A/s 13 C 3 2013-12-26 Rev.4.0 TK40M60U 7. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 4 2013-12-26 Rev.4.0 TK40M60U 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 |Yfs| - ID Fig. 8.6 RDS(ON) - ID 5 2013-12-26 Rev.4.0 TK40M60U Fig. 8.7 RDS(ON) - Ta Fig. 8.8 IDR - VDS Fig. 8.9 C - VDS Fig. 8.10 Vth - Ta Fig. 8.11 PD - Tc (Guaranteed Maximum) Fig. 8.12 Dynamic Input/Output Characteristics 6 2013-12-26 Rev.4.0 TK40M60U Fig. 8.13 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.14 Safe Operating Area (Guaranteed Maximum) Fig. 8.15 EAS - Tch (Guaranteed Maximum) Fig. 8.16 Test Circuit/Waveform Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 7 2013-12-26 Rev.4.0 TK40M60U Package Dimensions Unit: mm Weight: 5.8 g (typ.) Package Name(s) TOSHIBA: 2-16F1S Nickname: TO-3P(N)IS 8 2013-12-26 Rev.4.0 TK40M60U RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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