Features
l Function as a trigger diode with a fixed voltage reference
l The TMMDB3 can be used in conjunction with triacs for simplified
gate control circuits or as a starting element in fluorescent lamp
ballasts.
l The diacs are intended for use in thyrisitors phase control ,
circuits for lamp dimming, universal motor speed control ,and
heat control.
Maximum Ratings
l Operating Temperature: -40oC to +125oC
l Storage Temperature: -40oC to +125oC
Electrical Characteristics @ 25oC Unless Otherwise Specified
NOTES: 1.Electrical characteristics applicable in both forward and
reverse directions.
2.Connected in parallel with the devices.
TMMDB3
SILICON
BIDIRECTIONAL
DIAC
Power dissipation
on Printed
Circuit(l=10mm) PC150mW T
A
=50oC
Repetitive Peak
on-state Current ITRM 2.0A
t
p
=10us,f=100Hz
Breakover Voltage
TMMDB3 VBO
Min Typ Max
28 32 36V C=22nF(Note 2)
Breakover Voltage
Symmetry |+VBO|
-|-VBO|±3V C=22nF(Note 2)
Output
Voltage(Note 1)
Vo(min) 5V
Breakover
Current(Note 1) IBO(max)
50uA C=22nF
Rise Time(Note 1)
Tr
2us
Leakage
Current(Note 1) IR(max)
10uA
VR=0.5VBO(max)
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SUGGESTED SOLDER
PAD LAYOUT
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .134 .142 3.40 3.60
B .008 .016 .20 .40
C .055 .059 1.40 1.50
∅
A
B
C
Cat
h
ode
M
a
.165
.075
.030
MINIMELF
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 3 2003/04/30
TM
Micro Commercial Components
TM
Micro Commercial Components
MCC
www.mccsemi.com
10mA
IBO
IR
-V +V
+I
F
-I
F
0,5 VBO
VBO
V
VF
Diagram 1: Voltage - current characteristic curve.
D.U.T
Vo
C=0.1µF
220V
50 Hz
500 kΩ10 kΩ
R=20 Ω
IP
Rs=0
T410
Diagram 2: Test circuit.
90 % l
p
10 % t
r
Diagram 3: Rise time measurement.
25 50 75 100 125
1.08
1.06
1.04
1.02
1.00
VBO [Tj]
VBO [Tj = 25°C]
Tj (°C)
Fig. 1: Relative variation of VBO versus junction
temperature (typical values)
1 10 100
0.1
1.0
10.0
20.0
tp(µs)
ITRM(A)
F=120Hz
Tj initial=25°C
Fig. 2: Repetitive peak pulse current versus pulse
duration (maximum values).
TMMDB3
10 20 50 100 200 500
0
5
10
15
20
25
30
35
40
C(nF)
tp(µs)
Tj=25°C
0Ω
10Ω
22Ω
68Ω
47Ω
33Ω
Fig. 3: Time duration while current pulse is higher
50mA versus C and Rs (typical values).
Revision: 3 2003/04/30
TM
Micro Commercial Components
