AO3418, AO3418L
Symbol Min Typ Max Units
BVDSS 30 V
0.001 1
TJ=55°C 5
IGSS 100 nA
VGS(th) 1 1.4 1.8 V
ID(ON) 15 A
43 60
TJ=125°C 64 85
52 70 m
101 155 m
gFS 11.7 S
VSD 0.81 1 V
IS2.5 A
Ciss 226 270 pF
Coss 39 pF
Crss 29 pF
Rg1.4 1.7 Ω
Qg3 3.6 nC
Qgs 1.4 nC
Qgd 0.55 nC
tD(on) 2.6 4 ns
tr3.2 5 ns
tD(off) 14.5 22 ns
tf2.1 3 ns
trr 10.2 13 ns
Qrr 3.8 5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
IF=3.8A, dI/dt=100A/µs
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=3.8A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=3.9Ω,
RGEN=6Ω
mΩ
VGS=4.5V, ID=3.5A
IS=1A,VGS=0V
VDS=5V, ID=3.8A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=2.5V, ID=1A
VGS=4.5V, VDS=5V
VGS=10V, ID=3.8A
Reverse Transfer Capacitance
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.