Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
70 90
100 125
RθJL 63 80
Junction and Storage Temperature Range
A
PD
°C
1.4
0.9
-55 to 150
TA=70°C
ID
3.8
3.1
15
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±12Gate-Source Voltage
Drain-Source Voltage 30
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
AO3418, AO3418L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
Rev 3: Nov 2004
Features
VDS (V) = 30V
ID = 3.8 A
RDS(ON) < 60mΩ (VGS = 10V)
RDS(ON) < 70mΩ (VGS = 4.5V)
RDS(ON) < 155mΩ (VGS = 2.5V)
General Description
The AO3418 uses advanced trench technology to
provide excellent RDS(ON), very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO3418L ( Green Product ) is offered in
a lead-free package.
G
D
S
S
GD
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd.
AO3418, AO3418L
Symbol Min Typ Max Units
BVDSS 30 V
0.001 1
TJ=55°C 5
IGSS 100 nA
VGS(th) 1 1.4 1.8 V
ID(ON) 15 A
43 60
TJ=125°C 64 85
52 70 m
Ω
101 155 m
Ω
gFS 11.7 S
VSD 0.81 1 V
IS2.5 A
Ciss 226 270 pF
Coss 39 pF
Crss 29 pF
Rg1.4 1.7 Ω
Qg3 3.6 nC
Qgs 1.4 nC
Qgd 0.55 nC
tD(on) 2.6 4 ns
tr3.2 5 ns
tD(off) 14.5 22 ns
tf2.1 3 ns
trr 10.2 13 ns
Qrr 3.8 5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
IF=3.8A, dI/dt=100A/µs
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=3.8A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=3.9Ω,
RGEN=6Ω
mΩ
VGS=4.5V, ID=3.5A
IS=1A,VGS=0V
VDS=5V, ID=3.8A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=2.5V, ID=1A
VGS=4.5V, VDS=5V
VGS=10V, ID=3.8A
Reverse Transfer Capacitance
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO3418, AO3418L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
270
1.7
3.6
13
0
3
6
9
12
15
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=2.5V
3V
3.5V
4V
10V
6V
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3 3.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
0
25
50
75
100
125
150
175
200
0246810
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=2.5V
VGS=10V
VGS=4.5V
30
40
50
60
70
80
90
100
0246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=2.5V
VGS=4.5V
VGS=10V
ID=3.8A
25°C
125°C
ID=3.8A
ID=1A
ID=3.5A
Alpha & Omega Semiconductor, Ltd.
AO3418, AO3418L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
270
1.7
3.6
13
0
1
2
3
4
5
012345
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power ( W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Crss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100µs
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=15V
ID=3.8A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.
