October 2011 Doc ID 11736 Rev 4 1/17
17
SD2942
HF/VHF/UHF RF power N-channel MOSFETs
Features
■Gold metallization
■Excellent thermal stability
■Common source configuration, push pull
■POUT = 350 W min. with 15 db gain @ 175 MHz
■Low RDS(on)
Description
The SD2942 is a gold metallized N-channel MOS
field-effect RF power transistor. The SD2942
offers 25% lower RDS(ON) than industry standard
and 20% higher power saturation than ST
SD2932. These characteristics make the SD2942
ideal for 50 V DC very high power applications up
to 250 MHz.
Figure 1. Pin connection
M244 Epoxy sealed
11
22
3
1. Drain
2. Gate
3. Source
3
Table 1. Device summary
Order code Marking Base qty. Package Packaging
SD2942W SD2942(1) 15 M244 Tube
1. For more details please refer to Chapter 7: Marking, packing and shipping specifications.
www.st.com
Content SD2942
2/17 Doc ID 11736 Rev 4
Content
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 15
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
SD2942 Electrical data
Doc ID 11736 Rev 4 3/17
1 Electrical data
1.1 Maximum rating
TCASE = 25°C
1.2 Thermal data
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V(BR)DSS(1)
1. TJ = 150 °C
Drain source voltage 130 V
VDGR(1) Drain-gate voltage (RGS = 1MΩ)130V
VGS Gate-source voltage ±20 V
IDDrain current 40 A
PDISS Power dissipation 500 W
TJMax. operating junction temperature +200 °C
TSTG Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Junction to case thermal resistance 0.35 °C/W
Electrical characteristics SD2942
4/17 Doc ID 11736 Rev 4
2 Electrical characteristics
TCASE = 25°C
Table 4. Static (per section)
Symbol Test conditions Min. Typ. Max. Unit
V(BR)DSS(1)
1. TJ = 150°C
VGS = 0 V IDS = 100 mA 130 V
IDSS VGS = 0 V VDS = 50 V 100 µA
IGSS VGS = 20 V VDS = 0 V 250 nA
VGS(Q) VDS = 10 V ID = 250 mA 1.5 4 V
VDS(ON) VGS = 10 V ID = 10 A 3.0 V
GFS VDS = 10 V ID = 5 A 5 mho
CISS VGS = 0 V VDS = 50 V f = 1 MHz 415 pF
COSS VGS = 0 V VDS = 50 V f = 1 MHz 236 pF
CRSS VGS = 0 V VDS = 50 V f = 1 MHz 17 pF
Table 5. Dynamic
Symbol Test Conditions Min. Typ. Max. Unit
POUT VDD = 50 V IDQ = 500 mA f = 175MHz 350 W
GPS VDD = 50 V IDQ = 500 mA POUT = 350 W f = 175MHz 15 17 dB
η
DVDD = 50 V IDQ = 500 mA POUT = 350 W f = 175MHz 55 61 %
Load
mismatch
VDD = 50 V IDQ = 500 mA POUT = 350 W f = 175MHz
all phase angles 5:1 VSWR
SD2942 Impedance
Doc ID 11736 Rev 4 5/17
3 Impedance
Figure 2. Impedance data schematic
Table 6. Impedance data
fZ
IN (Ω)Z
DL (Ω)
250 MHz 1.3 - j 1.9 1.9 + j 3.2
230 MHz 1.2 - j 1.8 2.1 + j 3.7
200 MHz 1.1 - j 1.6 2.7 +j 4.2
175 MHz 1.0 - j 1.4 3.3 + j 4.8
100 MHz 1.8 - j 2.5 7.5 + j 9
50 MHz 3.2 - j 4.4 10 + j 12
Z
DL
D
S
Z
IN
G
Typical Input
Impedance
Typical Drain
Load Impedance
Typical performance SD2942
6/17 Doc ID 11736 Rev 4
4 Typical performance
Figure 3. Capacitance vs drain voltage Figure 4. Drain current vs gate voltage
1
10
100
1000
0 5 10 15 20 25 30 35 40 45 50 55
Vdd (V)
Capacitance (pF)
Freq = 1 MHz
COSS
CISS
CRSS
0
2
4
6
8
10
12
14
16
18
20
0123456
Vgs (V)
Id (A)
Vds = 10 V
Tc = +80 °C Tc = +25 °C
Tc = -20 °C
Figure 5. Gate-source voltage vs case
temperature
Figure 6. Power gain vs POUT and case
temperature
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-25 0 25 50 75 100
Tc (oC)
Vgs (V - Normalized
)
Id = 0.1 A
Id = 0.25 A
Id = 1 A
Id = 2 A
Id = 4 A
I d = 11 A I d = 10 A Id = 9 A
Id = 7 A
Id = 5 A
12
13
14
15
16
17
18
19
20
0 50 100 150 200 250 300 350 400 450 500
Pout (W)
Gain (dB )
Vdd = 50V
Idq = 2 x 250mA
Freq = 175 MHz
-20°C
+25°C
+80°C
SD2942 Typical performance
Doc ID 11736 Rev 4 7/17
Figure 7. Efficiency vs case temperature Figure 8. POUT vs input power and case
temperature
0
10
20
30
40
50
60
70
0 50 100 150 200 250 300 350 400 450 500
Pout (W)
Nd ( %)
Vdd = 50V
Idq = 2 x 250mA
Freq = 175 MHz
-20°C
+25°C
+80°C
0
50
100
150
200
250
300
350
400
450
500
012345678910111213
Pin (W)
Pout (W)
V dd = 50V
Idq = 2 x 250mA
Freq = 175 MHz
-20°C +25°C
+80°C
Figure 9. POUT vs input power and drain
voltage
Figure 10. POUT vs gate voltage and case
temperature
0
50
100
150
200
250
300
350
400
450
500
0 1 2 3 4 5 6 7 8 9 101112131415
Pin (W)
Pout (W)
Freq = 175 MHz
Idq = 2 x 250mA
40V
50V
0
50
100
150
200
250
300
350
400
450
500
-4 -3 -2 -1 0 1 2 3 4
Vgs (V)
Pout (W)
Freq = 175 MHz
Idq = 2 x 250mA
Pin = 7W
+80°C
+25°C
- 20°C
Typical performance SD2942
8/17 Doc ID 11736 Rev 4
Figure 13. Maximum safe operating area
Figure 11. POUT vs drain voltage and input
power
Figure 12. Maximum thermal resist vs case
temperature
100
150
200
250
300
350
400
450
500
24 28 32 36 40 44 48 52
Vdd (V)
Pou t (W)
Freq = 175 MHz
Idq = 2 x 250mA
Pin = 5W
Pin = 7W
Pin = 10W
0.34
0.36
0.38
0.40
0.42
25 30 35 40 45 50 55 60 65 70 75 80 85
Tc (oC)
Rth(j-c) (oC/W)
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SD2942 Typical performance
Doc ID 11736 Rev 4 9/17
Figure 14. Transient thermal impedance
Figure 15. Transient thermal model
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Test circuit SD2942
10/17 Doc ID 11736 Rev 4
5 Test circuit
Figure 16. 175 MHz test circuit schematic
Note: 1 Dimensions at component symbols are references for component placement.
2 Gap between ground and transmission lines is + 0.002{0.05} - 0.000{0.00} Typ.
SD2942 Test circuit
Doc ID 11736 Rev 4 11/17
Table 7. 175 MHz test circuit component list
Symbol Description
R1,R2,R5,R6 470 Ω 1 W, surface mount chip resistor
R3,R4 360 Ω 0.5 W, carbon comp. axial lead resistor or equivalent
R7,R8 560 Ω 2 W, resistor two turn wire air-wound axial lead resistor
R9,R10 20 KΩ 3.09 W, 10 turn wirewound precision potentiometer
C1,C4 680 pF ATC 130B surface mount ceramic chip capacitor
C2,C3,C7,C8,C17,C19,C20,C21 10000 pF ATC 200B surface mount ceramic chip capacitor
C5 75 pF ATC 100B surface mount ceramic chip capacitor
C6 ST40 25 pF - 115 pF miniature variable trimmer
C9,C10 47 pF ATC 100B surface mount ceramic chip capacitor
C11,C12, C13 43 pF ATC 100B surface mount ceramic chip capacitor
C14,C15,C24,C25 1200 pF ATC 700B surface mount ceramic chip capacitor
C16,C18 470 pF ATC 700B surface mount ceramic chip capacitor
C22,C23 0.1 µF / 500 V surface mount ceramic chip capacitor
C26,C27 0.01 µF / 500 V surface mount ceramic chip capacitor
C28 10 µF / 63 aluminum electrolytic axial lead capacitor
B1 50 Ω RG316 O.D 0.076[1.93] L = 11.80[299.72] flexible coaxial cable 4 turns
through ferrite bead
B2 50 Ω RG-142B O.D 0.165[4.19] L = 11.80[299.72] flexible coaxial cable
T1 R.F. transformer 4:1, 25 Ω O.D RG316-25 O.D 0.080[2.03] L = 5.90[149.86]
flexible coaxial cable 2 turns through ferrite bead multi-aperture core
T2 R.F. transformer 1:4, 25 Ω semi-rigid coaxial cable O.D. 0.141[3.58] L =
5.90[149.86]
L1 Inductor λ 1/4 wave 50 Ω O.D 0.165[4.19] L = 11.80 [299.72] flexible coaxial
cable 2 turns through ferrite bead
FB1,FB5 Shield bead
FB2,FB6 Multi-aperture core
FB3 Multilayer ferrite chip bead (surface mount)
FB4 Surface mount EMI shield bead
PCB Woven glass reinforced ptfe microwave Laminate 0.06”, 1 oz EDCu, both
sides, εr = 2.55
Test circuit SD2942
12/17 Doc ID 11736 Rev 4
Figure 17. 175 MHz test circuit photomaster
Figure 18. 175 MHz test circuit
8.50 inches
4 inches
SD2942 Package mechanical data
Doc ID 11736 Rev 4 13/17
6 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 8. M244 (.400 x .860 4/L BAL N/HERM W/FLG)
DIM.
mm. inch
Min. Typ. Max. Min. Typ. Max.
A 5.59 5.84 0.220 0.230
B 5.08 0.200
C 3.02 3.28 0.119 0.129
D 9.65 9.91 0.380 0.390
E 19.81 20.82 0.780 0.820
F 10.92 11.18 0.430 0.440
G 27.94 1.100
H 33.91 34.16 1.335 1.345
I 0.10 0.15 0.004 0.006
J 1.52 1.78 0.060 0.070
K 2.59 2.84 0.102 0.112
L 4.83 5.84 0.190 0.230
M 10.03 10.34 0.395 0.407
N 21.59 22.10 0.850 0.870
Package mechanical data SD2942
14/17 Doc ID 11736 Rev 4
Figure 19. M244 package dimensions
n
g Dimensions are in inches
SD2942 Marking, packing and shipping specifications
Doc ID 11736 Rev 4 15/17
7 Marking, packing and shipping specifications
Figure 20. Marking layout
Table 9. Packing and shipping specifications
Order code Packaging Pcs per tray Dry pack
humidity Lot code
SD2942W Tube 15 < 10 % Not mixed
Table 10. Marking specifications
Symbol Description
W Wafer process code
CZ Assembly plant
xxx Last 3 digits of diffusion lot
VY Diffusion plant
MAR Country of origin
CZ Test and finishing plant
y Assembly year
yy Assembly week
SD2942
Revision history SD2942
16/17 Doc ID 11736 Rev 4
8 Revision history
Table 11. Document revision history
Date Revision Changes
18-Oct-2005 1 First Issue.
04-Jan-2006 2 Complete version.
14-Apr-2010 3 Added Figure 13, Figure 14 and Figure 15.
25-Oct-2011 4 Inserted Chapter 7: Marking, packing and shipping
specifications.
SD2942
Doc ID 11736 Rev 4 17/17
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