Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10123EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
SILICON POWER MOS FET
NE5520279A
3.2 V OPERATION SILICON RF POWER LDMOS FET
FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
(our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0
dBm output power with 45% power added efficiency at 1.8 GHz under the 3.2 V supply voltage.
FEATURES
•High output power : Pout = 32.0 dBm TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)
•High power added efficiency :
add = 45% TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 25 dBm)
•High linear gain : GL = 10 dB TYP. (VDS = 3.2 V, IDset = 700 mA, f = 1.8 GHz, Pin = 5 dBm)
•Surface mount package : 5.7 5.7 1.1 mm MAX.
•Single supply : VDS = 2.8 to 6.0 V
APPLICATION
•Digital cellular phones : 3.2 V DCS1800 Handsets
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
NE5520279A-T1
79A
A2
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
NE5520279A-T1A
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5520279A-A
The mark shows major revised points.
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Data Sheet PU10123EJ03V0DS
2
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15.0
V
Gate to Source Voltage
VGS
5.0
V
Drain Current
ID
0.6
A
Drain Current (Pulse Test)
ID Note
1.2
A
Total Power Dissipation
Ptot
12.5
W
Channel Temperature
Tch
125
C
Storage Temperature
Tstg
55 to +125
C
Note Duty Cycle 50%, Ton 1 s
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
2.8
3.0
6.0
V
Gate to Source Voltage
VGS
0
2.0
3.0
V
Drain Current
ID
Duty Cycle 50%, Ton 1 s
800
1 000
mA
Input Power
Pin
f = 1.8 GHz, VDS = 3.2 V
24
25
30
dBm
ELECTRICAL CHARACTERISTICS
(TA = +25C, unless otherwise specified, using NEC standard test fixture)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSS
VGS = 5.0 V
100
nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
VDS = 6.0 V
100
nA
Gate Threshold Voltage
Vth
VDS = 3.5 V, ID = 1 mA
1.0
1.4
1.9
V
Thermal Resistance
Rth
Channel to Case
8
C/W
Transconductance
Gm
VDS = 3.2 V, ID = 700 mA
1.3
S
Drain to Source Breakdown Voltage
BVDSS
IDSS = 10
A
15
18
V
Output Power
Pout
f = 1.8 GHz, VDS = 3.2 V,
30.5
32.0
dBm
Drain Current
ID
Pin = 25 dBm,
800
mA
Power Added Efficiency
add
IDset = 700 mA (RF OFF), Note1
40
45
%
Linear Gain Note2
GL
10
dB
Notes 1. DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2. Pin = 5 dBm
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Data Sheet PU10123EJ03V0DS
3
TYPICAL CHARACTERISTICS (TA = +25C)
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10123EJ03V0DS
4
S-PARAMETERS
LARGE SIGNAL IMPEDANCE (VDS = 3.2 V, ID = 700 mA, f = 1.8 GHz)
f (GHz)
Zin ()
ZOL () Note
1.8
1.77 j6.71
1.25 j5.73
Note ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
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Data Sheet PU10123EJ03V0DS
5
EVALUATION BOARD FOR 1.8 GHz
Symbol
Value
Comment
C1, C3
4.7 pF
C2
2.4 pF
C4
2.2 pF
C5
0.8 pF
C6
10 pF
C7
1 000 pF
C8
0.22
F
C9
3.3
F - 16V
R1
1 000
L1
22 nH
Circuit Board
t = 0.4 mm, r = 4.5
R4775
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Data Sheet PU10123EJ03V0DS
6
PACKAGE DIMENSIONS
79A (UNIT: mm)
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
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Data Sheet PU10123EJ03V0DS 7
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220C or higher : 60 seconds or less
Preheating time at 120 to 180C : 12030 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature) : 215C or below
Time at temperature of 200C or higher : 25 to 40 seconds
Preheating time at 120 to 150C : 30 to 60 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature) : 260C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature) : 350C or below
Soldering time (per pin of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
DISCONTINUED
Mouser Electronics
Authorized Distributor
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CEL:
NE5520279A-EVPW24 CG2164X3-EVAL