© 2008 IXYS All rights reserved 1 - 3
20080305
FMD 47-06KC5
FDM 47-06KC5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
MOSFET T
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C 600 V
VGS ± 20 V
ID25
ID90
TC = 25°C
TC = 90°C
47
32
A
A
EAS
EAR
single pulse
repetitive
1950
3
mJ
mJ
dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V 50 V/ns
ID = 11 A; TC = 25°C
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon VGS = 10 V; ID = 44 A 40 45 mW
VGS(th) VDS = VGS; ID = 3 mA 2.5 3 3.5 V
IDSS VDS = VDSS; VGS = 0 V TVJ = 25°C
TVJ = 150°C 50
10 µA
µA
IGSS VGS = ± 20 V; VDS = 0 V 100 nA
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
6800
320
pF
pF
Qg
Qgs
Qgd
VGS = 0 to 10 V; VDS = 400 V; ID = 44 A
150
35
50
190 nC
nC
nC
td(on)
tr
td(off)
tf
Eon
Eoff
Erec off
VGS = 10 V; VDS = 400 V
ID = 44 A; RG = 3.3 Ω
30
20
100
10
tbd
tbd
tbd
ns
ns
ns
ns
mJ
mJ
mJ
RthJC
RthCH with heat transfer paste 0.25
0.45 K/W
K/W
1) CoolMOS™ is a trademark of
Infineon Technologies AG.
ID25 = 47 A
VDSS = 600 V
RDS(on) max = 0.045 Ω
CoolMOS™ 1) Pow er MOSFET
with HiPerDyn™ FRED
Buck and Boost Topologies
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge
ISOPLUS i4™
1
5isolated back
surface
E72873
FMD
4
3
1
2
D
T
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 40 pF)
• Fast CoolMOS™ 1) power MOSFET 4th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
• HiPerDyn™ FRED
- consisting of series connected diodes
- enhanced dynamic behaviour for
high frequency operation
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
FDM
5
3
4
2
D
T
© 2008 IXYS All rights reserved 2 - 3
20080305
FMD 47-06KC5
FDM 47-06KC5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
MOSFET T Source-Drain Diode
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
ISVGS = 0 V 44 A
VSD IF = 44 A; VGS = 0 V 0.9 1.2 V
trr
QRM
IRM
IF = 44 A; -diF /dt = 100 A/µs; VR = 400 V
600
17
60
ns
µC
A
Component
Symbol Conditions Maximum Ratings
TVJ
Tstg
operating
storage
-55...+150
-55...+125
°C
°C
VISOL IISOL < 1 mA; 50/60 Hz 2500 V~
FCmounting force with clip 20...120 N
Symbol Conditions Characteristic Values
min. typ. max.
CPcoupling capacity between shorted pins
and mounting tab in the case
40 pF
dS, dA
dS, dA
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Weight 9g
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 30 A TVJ = 25°C
IF = 60 A
2.48
3.02
V
V
IF = 30 A TVJ = 150°C
IF = 60 A
1.89
2.45
A
A
IRVR = VRRM TVJ = 25°C
TVJ = 150°C
1
0.2
µA
mA
IFSM t = 10 ms (50 Hz), sine; TVJ = 45°C450 A
IRM
trr
IF = 30 A; VR = 100 V; TVJ = 25°C
-diF /dt = 200 A/µs
2
30
A
ns
RthJC
RthCH with heat transfer paste 0.25
0.55 K/W
K/W
Diode D (data for series connection)
Symbol Conditions Maximum Ratings
VRRM TVJ = 25°C to 150°C 600 V
IF25
IF90
TC = 25°C
TC = 90°C
95
56
A
A
© 2008 IXYS All rights reserved 3 - 3
20080305
FMD 47-06KC5
FDM 47-06KC5
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
ISOPLUS i4TM Outline
