TLUV5300 Vishay Semiconductors Bicolor LED in 5 mm Untinted Diffused Package FEATURES * * * * 19230 PRODUCT GROUP AND PACKAGE DATA * Product group: LED * Package: 5 mm * Product series: bicolor * Angle of half intensity: 30 * * * * * Even luminance of the emitting surface Ideal as flush mounted panel indicators For DC and pulse operation Color mixing possible due to separate anode terminals Luminous intensity selected into groups Categorized for green color Wide viewing angle Common cathode Lead (Pb)-free device e4 APPLICATIONS * Indicating and illumination purposes PARTS TABLE PART COLOR, LUMINOUS INTENSITY TECHNOLOGY Green/red, IV > 1 mcd GaAsP on GaP TLUV5300 ABSOLUTE MAXIMUM RATINGS1) TLUV5300 SYMBOL VALUE Reverse voltage per diode PARAMETER TEST CONDITION VR 6 UNIT V DC Forward current per diode IF 30 mA tp 10 s IFSM 1 A Power dissipation per diode Tamb 55 C PV 100 mW Total power dissipation Tamb 55 C Ptot 150 mW Tj 100 C Tamb - 40 to + 100 C Tstg - 55 to + 100 C Tsd 260 C RthJA 450 K/W RthJA 300 K/W Surge forward current per diode Junction temperature Operating temperature range Storage temperature range Soldering temperature t 5 s, 2 mm from body Thermal resistance junction/ ambient per diode Thermal resistance junction/ ambient total Note: 1) T amb = 25 C, unless otherwise specified Document Number 83056 Rev. 1.7, 21-Sep-07 www.vishay.com 1 TLUV5300 Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLUV5300, RED PARAMETER TEST CONDITION SYMBOL MIN TYP. 2.5 MAX UNIT Per diode Luminous intensity 2) IF = 10 mA IV 1 Dominant wavelength IF = 10 mA d 612 mcd 625 nm Peak wavelength IF = 10 mA p 630 nm Angle of half intensity IF = 10 mA 30 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 A VR VR = 0, f = 1 MHz Cj Junction capacitance 2 6 3 V 15 V 50 pF Note: 1) T amb = 25 C, unless otherwise specified 2) in one packing unit IVmin/IVmax 0.5 OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLUV5300, GREEN PARAMETER TEST CONDITION SYMBOL MIN TYP. Luminous intensity 2) IF = 10 mA IV 1 2.5 Dominant wavelength IF = 10 mA d 552 Peak wavelength IF = 10 mA p 565 Angle of half intensity IF = 10 mA 30 Forward voltage IF = 20 mA VF 2.4 Reverse voltage IR = 10 A VR VR = 0, f = 1 MHz Cj MAX UNIT Per diode Junction capacitance mcd 575 6 nm nm deg 3 V 15 V 50 pF Note: 1) T amb = 25 C, unless otherwise specified 2) in one packing unit IVmin/IVmax 0.5 TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified 60 100 IF - Forward Current (mA) PV - Power Dissipation (mW) 125 75 50 25 0 50 40 30 20 10 0 0 95 9983 20 40 60 80 100 Tamb - Ambient Temperature (C) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 0 95 9984 20 40 60 80 100 Tamb - Ambient Temperature (C) Figure 2. Forward Current vs. Ambient Temperature for InGaN Document Number 83056 Rev. 1.7, 21-Sep-07 TLUV5300 Vishay Semiconductors I v rel - Relative Luminous Intensity tp/T = 0.01 1000 0.02 0.05 0.1 100 0.2 0.5 1 10 Tamb 55 C 1 0.01 0.1 1 10 0.8 0.4 I F = 10 mA 0 40 1.0 0.9 50 0.8 60 70 0.7 80 20 40 60 80 100 T amb - Ambient Temperature (C) Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 20 30 IVrel - Relative Luminous Intensity 1.2 95 10087 Figure 3. Forward Current vs. Pulse Length 0 Red 0 tp - Pulse Length (ms) 95 10085 1.6 100 10 2.4 I v rel - Relative Luminous Intensity IF - Forward Current (mA) 10000 Red 2.0 1.6 1.2 0.8 0.4 I FAV = 10 mA, const. 0 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10042 Figure 4. Rel. Luminous Intensity vs. Angular Displacement 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 1000 10 I v rel - Relative Luminous Intensity I F - Forward Current (mA) 10 95 10088 red 100 10 1 t p /T = 0.001 t p = 10 s 0.1 Red 1 0.1 0.01 0 95 10086 2 4 6 8 10 V F - Forward Voltage (V) Figure 5. Forward Current vs. Forward Voltage Document Number 83056 Rev. 1.7, 21-Sep-07 1 95 10089 10 100 I F - Forward Current (mA) Figure 8. Relative Luminous Intensity vs. Forward Current www.vishay.com 3 TLUV5300 Vishay Semiconductors 2.4 Red I v rel - Specific Luminous Intensity I v rel - Relative Luminous Intensity 1.2 1.0 0.8 0.6 0.4 0.2 0 590 1.6 1.2 0.8 0.4 0 610 630 650 670 690 - Wavelength (nm) 95 10090 10 20 50 100 200 500 IF (mA) 1 0.5 0.2 0.1 0.05 0.02 t p /T 95 10263 Figure 9. Relative Intensity vs. Wavelength Figure 12. Specific Luminous Intensity vs. Forward Current 1000 10 I v rel - Relative Luminous Intensity I F - Forward Current (mA) green 2.0 green 100 t p /T = 0.001 t p = 10 s 10 1 green 1 0.1 0.1 0 95 10034 2 4 6 8 1.2 IVrel - Relative Luminous Intensity green 1.2 0.8 0.4 I F = 10 mA 0 95 10035 20 40 60 80 100 T amb - Ambient Temperature (C) Figure 11. Rel. Luminous Intensity vs. Ambient Temperature www.vishay.com 4 100 Figure 13. Relative Luminous Intensity vs. Forward Current 1.6 0 10 I F - Forward Current (mA) 95 10037 Figure 10. Forward Current vs. Forward Voltage I v rel - Relative Luminous Intensity 1 10 V F - Forward Voltage (V) green 1.0 0.8 0.6 0.4 0.2 0 520 95 10038 540 560 580 600 620 - Wavelength (nm) Figure 14. Relative Intensity vs. Wavelength Document Number 83056 Rev. 1.7, 21-Sep-07 TLUV5300 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 95 11271 Document Number 83056 Rev. 1.7, 21-Sep-07 www.vishay.com 5 TLUV5300 Vishay Semiconductors Ozone Depleting Substances Policy Statemen It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 83056 Rev. 1.7, 21-Sep-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1