1N5147A - Motorola / Freescale Semiconductor

‘! \ . .

’ r 1

I I ,1 i ::

“,

“1 .,& i” , :.,i %,~,,>V<,,L > a>“_

_j : **

I *k .. ,., *t *.; :, ;: a; y <.~ E ~,* ‘:, T <’ ‘;i‘<“: $ a* I Ri <;

‘-\ ‘,,’

._“_ I’

Characteristic-All Types Test Conditions Symbol Min Typ Max Unit

Reverse Bre*down Voltage IR =10 pAdc Bn 60 70 —Vdc w’

Reverse Voltage Le~age Current VR =55 Vdc, TA =25°C IR — — 0.02 pAdc

VR =55 Vdc, TA =150°C — — 20

Series hductmce f=250 MHz, Lx1/16~) LS —5—~*2;.+

Case Capacitance f=1MHz, L%1/16’) cc —0.25 —f:,&:

,,*,.‘$.,~..

,:i>

Diode Capacitance Temperature ‘),;,l+..!,s.

~!:~J\~.?:,{

Coefficient VR=4VdC, f=l MHz TCC —200 ~w$:b,p”:~ PP4°c

,:~::~,,:4..+y,<;’

v,...<, ..(,

IDevice

I1N5139

1N5139A

1N5140

1N5140A

1N5141

1N5141A

1N5142

1N5142A

1N5143

1N5143A

1N5144

1N5144A

1N5145

1N5145A

1N5146

1N5146A

1N5147

1N5147A

1N5148

1N5148A

Cr, Diode Capacitance Q, Figure of Merit .:

VR=4Vdc, f=l MHz VR =4Vdc, VR =4Vd; f=1w~e..

.\,.yJ/>,&,

pF f=50 MHz ‘“~-~.>...~.

:,.‘.!.Ji>,:.,,,

10.8 12.0 13.2 300 .. ‘~;~$ 0.38 0.41

11.4 12.0 12.6 300 .&$;,, 0.38 0.41

13.5 15.0 16.5 25Q:,.,,,. ‘h<.: 0.38 0.41

14.3 15.0 15.7 .zf~ ‘$ 0.38 0.41

.’<1.,,:.*,,\N~

16.2 18.0 19.8 ..,,,.:,,:,\~ 0.38 0.41

17.1 18.0 18.9 $~+\..,>..

,$ 0.38 0.41

19.8 22.0 24.2 ,,)$ 200 0.43 0.45

20.9 22.0 23.1 .~~. .200

.,,,:>l.,;$, 0.43 0.45

Min Typ

2.7 2.9

2.8 3.0

3.2 3.4

1s,SERIES lNDUCTA~’~ ‘“ tance bridge at the specified frequency and substituting in

LSis measured on’k,”~tied package at 250 MHz using an the following equations:

impedance bri ~.$~,oonton Radio Model 250A RX Meter). 2rfc

L=lead Ienst i;. “’$ Q=T

~:.. .1+

.~,,:’’~;:;,,} (Boonton Electronics Model 33AS8).

Cc, CA$Fi\~&fTANCE 6. a, DIODE CAPACITANCE REVERSE VOLTAGE SLOPE

cc i~,~~s$ted on an open package at 1MHz using aca- The diode capacitance, CT (as measured at VR =4Vdc,

pa@#t’~~~&’’bridge (Boonton Electronics Model 75A or

.RqtiJ$5Y&nt). f=1MHz) is compared to CT(as measured at V, =60 Vdc,

:;~?~.....:*J f=1MHz) by the following equation which defines a.

,i>,,..,,...,\

&;tiODE CAPACITANCE log C,(4) –log CT(60)

a= 10~ 60 – 10~ 4

(C, =CC +CJ). C, is measured at 1MHz using acapaci-

tance bridge (Boon ton Electronics Model 75A or

equivalent).

TR,TUNING RATIO

TR is the ratio of C, measured at 4Vdc divided by CTmeas-

ured at 60 Vdc.

Q, FIGURE OF MERIT

Qis calculated by taking the Gand Creadings of an admit-

Note that aC, versus vR-law is a;sumed as shown in the

following equation where CC is included.

7. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT

TCC is guaranteed by comparing CT at V, =4Vdc, f=

1MHz, T. =–65° Cwith CT at VR =4Vdc, f=1MHz,

T. =+85°C in the following equation which defines TCC:

TCC =C,(+85°C) –C,(–65” C) 1. 106

85 +65 C,(25° C)

MOTOROLA Semiconductor Products Inc. @●00000000 ●00000000

100

1,020

1.010

0.960

—

FIGURE 1– DIODE CAPACITANCEversusREVERSEVOLTAGE

1.0 3.0 5.0 7.0 10 30 5060

VR,REVERSEVOLTAGE(VOLTS)

FIGURE 3– NORMALIZED DIODE CAPACITANCE

versusJUNCTION TEMPERATURE

o– 10 –20 –30 –40

VR,

REVERSEVOLTAGE(VOLTS)

)00000000 ●00000000 ●

-50 –60

10000

7000

5000

3000

~1000

~700

u- 500

300

100

140

FIGURE 2 – FIGURE OF MERITversusREVERSEVOLTAGE

1 1 1 [1I1

III[1 ITA = 25°C

f=50 MHz

,1 1

I1[

*WE 4- NORMALIZED FIGURE OF MERIT

,,.:,y:w’:~isus JUNCTION TEMPERATURE

M070ROLA

?= 50MHz

70 II1

–65 –50 –25 o+25 +50 +75 +85

2000

1000

700

500

300

100

T,,JUNCTIONTEMPERATURE(°C)

FIGURE 6– FIGURE OF MERITversusFREQUENCY

10 30 50 70 100

f,FREQUENCY(MHz)

Semiconductor Products Inc.

EPICAP VOLTAGE VARIABLE CAPACITANCE DIODE DEVICE CONSIDERATIONS

A. EPICAP NETWORK PRESENTATION FIGURE 7d

The equivalent circuit in Figure 7shows the voltage capaci- Cc)l

tance and parasitic elements of an EPICAP diode. For design

purposes at all but very high and very low frequencies, Ls, RJ, )1

and CC can be neglected. The simplified equivalent circuit of

Figure 8represents the diode under these conditions. CJ {:.?

Definitions: R,

CJ —Voltage Variable Junction Capacitance

RS —Series Resistance (semiconductor bulk, contact,

and lead resistance) ~,1~

Cc —Case Capacitance ,,$,

FIGURE 8

LS—Series Inductance

RJ —Voltage Variable Junction Resistance (negligible c,

above 100 kHz) oVI ~,:.\..?,.:.K:.

B. EPICAP CAPACITANCE VS REVERSEBIAS VOLTAGE CT= CC+CJ :xd>y,b “’*

J* (1)

..:.,:\:.

The most important design characteristic of an EPICAP C,= CC+ c“ ~‘{[,~”,{ ‘(2)

diode is the C, versus VRvariation as shown in equations 1and (1 +$$$:$’”

2. Since the designer is primarily interested in the slope of CT C.= C, at VR =O

versus VR, the CC, CO, o, and Ycharacteristics have been en- ‘*,‘:,.. V, =Reverse Bias

. ,.“$?.

compassed by the simplified equation 3. Min/max limits on @=Contact Potent~*~W*.y o’~6vOlt ~ = CJ slope, ~z0.5

a(as defined in Note 6) can be guaranteed over aspecified

V~ range. c,= ~>$,; ’’”” (3)

sv&$4, .,? “

\~,\.t

,i,;:\;2:1-

.Jt’.,.

,,* *J;:..

.$/:,

,?i~~e.),,,

.,!),l.,

,~\*\..%*,, \.

JJ: -1>,\

,.~,

..,, ‘$\:

\\$:\,i.;:.:.l,,!:>

J,.r,,

,$\i,y,*?$,\,t,*;,.

‘,:$.,

~1.?,

,,+$

C. EPICAP CAPACITANCE VS FREQUENCY

Variations in EPICAP effective capacitance, as a function of

operating frequency, can be derived from asimplified equiv-

alent circuit similar to that of Figure 7, but neglecting RS and

R,. The admittance expression for such acircuit is given in

equation 4. Examination of equation 4yields the following

information:

At low frequencies, C,. =CJ; at very high freque~~~es

(f= m) C.q -cc. . .,i,

As frequency is increased from 1MHz, C., incre~&2$@n%~

it is maximum at W2 =1/LsCJ: and as WZ is incraa&~%6m

1/LsC, toward infinity, C.; increases from ave~:~~~~e ca-

pacitance (inductance) toward C., =Cc, apositi%.c~,@~tan ce.

Very simple calculations for C., at highe~$~.$~~%mcles indi-

cate the problems encountered when cap%~~-surements

~~~ <LsC,, small

are made above 1MHz. As uapproach esi.w. %.{

variations in Ls cause extreme variat~~%~~:,~easured diode

capacitance. ,.. ~~\

,+:~,+:,:,,

.,~t.,~,.iy

..;:....

y=j.C.q =Jwc.+1 T~LsCJ (4)

0. EPICAP FIGURE OF MERIT (~h@WtiTOFF FREQUENCY (f..)

The efficiency of EPIC& re%se to an input frequency is

related to the Figure of ,~~@tof the device as defined in equa-

tion 5. For very low f&@~FR@ies, equation 6applies whereas

at high frequencie~~~fi,e~d” Rj can be neglected, equation 5

may be rewritten i~$dw familiar form of equation 7.

Another usefd~<~&&meter for EPICAP devices is the cutoff

frequency (f.:~:~lk is merely that frequency at which Qis

equal to l..~~u~~on 8gives this relationship.

,:,$> *J

.....

,,..,,...,:\., ~?,.>,:.t!:,

E. H~~%$lW GENERATION USING EPICAPS

,<:\*s\,+l.,,,,.:-::,

gf@9~flt harmonic generation is possible with Motorola

EPl@PS because of their high cutoff frequency and break-

down voltage. Since EPICAP junction capacitance varies in-

versely with the square root of the breakdown voltage,

harmonic generator performance can be accurately predicted

from various idealized models. Equation 9gives the level of

maximum input power for the EPICAP and equation 10 gives

the relationshi~s governing EPICAP circuit efficiency. In these

Q=%

Rsa~ (5)

Q,, =UCJRJ2

RJ +Rs(l +W2CJ2RJ2) (6)

Q,, = ~ (7)

wRsC.*

f.. =Qf.., = ~ (8)

2RRSCBYR

p,~,,) ~M(BV, +o)z f,.

I“ Rs E(9)

M(x2) =0.0285 ;M(x3) =0.0241; M(x4) =0.196

Eff=l– N~ (lo)

N(x2) =20.8; N(x3) =34.8; N(x4) =62.5

equations, adequate heat =inking has been assumed. Mand Nare Constants

@WOTOROLAINC.,1972

MOTOROLA Semiconductor Products Inc.

OOX 20S12 ●PHOENIX, ARIZONA 85036 ●ASUBSIDIARY OF MOTOROLA INC.

,,0”-1,,1,,,. ,, ,,, 7-s5 Im,k,A, ,,,,,0 c,,,,, 1,000 0s,5,,