e
1
0
10
20
30
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Input Power (Watts)
Output Power (Watts)
VCC = 24 V
ICQ = 150 mA
f = 470 MHz
Typical Output Power vs. Input Power
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 30 Vdc
Collector-Base Voltage VCBO 65 Vdc
Emitter-Base Voltage (collector open) VEBO 4.0 Vdc
Collector Current (continuous) IC6.7 Adc
Total Device Dissipation at Tflange = 25°C PD150 Watts
Above 25°C derate by 1.0 W/°C
Storage Temperature Tstg 150 °C
Thermal Resistance (Tflange = 70°C) RθJC 1.0 °C/W
PTB 20200
30 Watts, 380–500 MHz
RF Power Transistor
Description
The 20200 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 380–500 MHz. Rated at 30 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
30 Watts, 380–500 MHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Package 20200
20200
LOT CODE
9/23/98
PTB 20200
2
e
Z Source Z Load
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 10 mA V(BR)CEO 30 — — Volts
Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V(BR)CES 55 70 — Volts
Breakdown Voltage E to B IC = 0 A, IE = 10 mA V(BR)EBO 3.5 — — Volts
DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(VCC = 24 Vdc, Pout = 30 W, ICQ = 150 mA, f = 500 MHz) Gpe 10.0 11.5 — dB
Collector Efficiency
(VCC = 24 Vdc, Pout = 30 W, ICQ = 150 mA, f = 500 MHz) ηC—50—%
Intermodulation Distortion
(VCC = 24 Vdc, Pout = 30 W(PEP), ICQ = 150 mA, IMD — -30 — dBc
f1 = 469 MHz, f2 = 470 MHz)
Load Mismatch Tolerance
(VCC = 24 Vdc, Pout = 30 W, ICQ = 150 mA, Ψ— — 10:1 —
f = 500 MHz—all phase angles at frequency of test)
Impedance Data (data shown for fixed-tuned broadband circuit)
VCC = 24 Vdc, Pout = 30 W, ICQ = 150 mA
Frequency Z Source Z Load
MHz R jX R jX
450 0.9 -3.3 2.4 0.1
470 0.8 -2.9 2.4 0.7
490 0.8 -2.5 2.4 1.3
9/23/98
PTB 20200
3
e
Gain & Efficiency vs. Frequency
(as measured in a broadband c ircuit)
9
10
11
12
13
440 450 460 470 480 490 500
Frequency (MHz)
Gain (dB)
55
60
65
70
75
Efficiency (%)
VCC = 24 V
ICQ = 150 mA
Pout = 40 W
Gain (dB)
Efficiency (%)
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20200 Uen Rev. D 9-23-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
9/23/98
