Philips Semiconductors Product specification
Thyristors BT169 series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated, sensitive gate thyristors SYMBOL PARAMETER MAX MAX MAX MAX UNIT
inaplasticenvelope,intendedforuse ....
in general purpose switching and BT169
phase control applications. These VDRM, Repetitive peak BDEGV
devicesareintendedtobeinterfaced VRRM off-state voltages 200 400 500 600
directly to microcontrollers, logic IT(AV) Average on-state A
integrated circuits and other low current 0.5 0.5 0.5 0.5
power gate trigger circuits. IT(RMS) RMS on-state current A
ITSM Non-repetitive peak 0.8 0.8 0.8 0.8 A
on-state current 8888
PINNING - TO92 variant PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 anode
2 gate
3 cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BDEG
VDRM, VRRM Repetitive peak off-state - 2001400150016001V
voltages
IT(AV) Average on-state current half sine wave; - 0.5 A
Tlead ≤ 83 ˚C
IT(RMS) RMS on-state current all conduction angles - 0.8 A
ITSM Non-repetitive peak t = 10 ms - 8 A
on-state current t = 8.3 ms - 9 A
half sine wave;
Tj = 25 ˚C prior to surge
I2tI
2t for fusing t = 10 ms - 0.32 A2s
dIT/dt Repetitive rate of rise of ITM = 2 A; IG = 10 mA; - 50 A/µs
on-state current after dIG/dt = 100 mA/µs
triggering
IGM Peak gate current - 1 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 2 W
PG(AV) Average gate power over any 20 ms period - 0.1 W
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 125 ˚C
temperature
ak
g
321
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 2001 1 Rev 1.500
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-lead Thermal resistance - - 60 K/W
junction to lead
Rth j-a Thermal resistance pcb mounted; lead length = 4mm - 150 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 10 mA; gate open circuit - 50 200 µA
ILLatching current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ-26mA
IHHolding current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ-25mA
VTOn-state voltage IT = 1 A - 1.2 1.35 V
VGT Gate trigger voltage VD = 12 V; IT = 10 mA; gate open circuit - 0.5 0.8 V
VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C; 0.2 0.3 - V
gate open circuit
ID, IROff-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C; - 0.05 0.1 mA
RGK = 1 kΩ
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 500 800 - V/µs
off-state voltage exponential waveform; RGK = 1 kΩ
tgt Gate controlled turn-on ITM = 2 A; VD = VDRM(max); IG = 10 mA; - 2 - µs
time dIG/dt = 0.1 A/µs
tqCircuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 100 - µs
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
September 2001 2 Rev 1.500
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
Fig.3. Maximum permissible rms current IT(RMS) ,
versus lead temperature, Tlead.
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tlead ≤ 83˚C.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8 a = 1.57
1.9
2.2
2.8
4
IF(AV) / A
Ptot / W Tc(max) / C
125
119
113
107
101
95
89
83
conduction
angle form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
77
a
1 10 100 1000
0
2
4
6
8
10
Number of half cycles at 50Hz
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
1
10
100
1000
10us 100us 1ms 10ms
T / s
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
0.01 0.1 1 10
0
0.5
1
1.5
2
surge duration / s
IT(RMS) / A
-50 0 50 100 150
0
0.2
0.4
0.6
0.8
1
Tlead / C
IT(RMS) / A
83 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
September 2001 3 Rev 1.500
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj, RGK = 1 kΩ.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Zth j-lead, versus
pulse width tp.
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2 2.5
0
1
2
3
4
5
typ
VT / V
IT / A
max
Tj = 125 C
Tj = 25 C
Vo = 1.067 V
Rs = 0.187 ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
0.01
0.1
1
10
Zth j-lead (K/W)
100
tp
P
t
D
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25 C)
050 100 150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
RGK = 1 kohms
September 2001 4 Rev 1.500
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
MECHANICAL DATA
Fig.13. TO92 ; plastic envelope; Net Mass: 0.2 g
Notes
1. Epoxy meets UL94 V0 at 1/8".
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43 97-02-28
A L
0 2.5 5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
September 2001 5 Rev 1.500
Philips Semiconductors Product specification
Thyristors BT169 series
logic level
DEFINITIONS
DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS
STATUS2STATUS3
Objective data Development This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
September 2001 6 Rev 1.500
