INTERNATIONAL RECTIFIER POWER SEMICONDUCTOR JUNCTIONS INTERNATIONAL RECTIFIER ebE D Diode, Thyristor and Triac Junctions me 438ss4sSe 0010280 1 @& TOlr-C THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION This section describes the pre-passivated thyristors and diodes available from International Rectifier in die form. International Rectifier employs two different passivation techniques in the manufacturing of low, medium and high power die, glass and silicon rubber, Each process offers certain advantages and is therefore specific to certain die types. Glass passivation provides great stability of blocking voltage characteristic and a level of hermeticity with relatively high mechanical strength, for this reason it is chosen for the ranges of Schottky die and power thyristors. Silicone rubber offers both very high working temperature gradient, capability and blocking voltage stability and so is used for power rectifier passivation. Processes developed by International Rectifier allow for the passivation with either glass or silicone rubber at wafer scale, just prior to die cutting, this reduces handling and processing time thereby enhancing reliability and improving costs, higher quality lower price! JUNCTION CHARACTERISTICS The die characteristics and die sizes of thyristors and diodes presently available from International Rectifler in chip form are designed in the specification and characteristics table. Because of limitation when electrically probing in die form some of the generic specification of the equivalent packaged device cannot be tested and guaranteed in chip form. These are power dissipation, surge, tum-off and thermal resistance. These ratings are dependent largely upon the user's assembly technique. However, the following characteristics are guaranteed by design to meet the specifications of the equivalent packaged part: Vt, VDRM, VARM; VR; lar, Vet; |H, DWOT, VF, trr and Tmax), in addition, a 100% probe test is performed on the parameters with guaranteed limits: VDRM: VARM: VA; lat, Ver, !H. For typical characteristic performance on most of the parameters, consult the appropriate generic data sheet. After die separation the dice are 100% visually inspected, tested, Q.A. inspected and packaged for shipment. HANDLING AND SHIPPING All Power Semiconductor chips from International Rectifier are shipped in plastic containers for protection during shipment, with the exception of the square thyristor chips which are shipped in glass jar filled with inert liquid to prevent damage during shipment. Once opened, the dice must be stored in a dry, inert atmosphere such as nitrogen prior to assembly. The dice should be handled In such a way as to prevent mechanical damage. JUNCTION MOUNTING The square chips have gold metallisation and the round chips have silver, both types are suitable for solder preform mounting. Glass passivated thyristors are also suitable for solder cream mounting with no-acid flux. Any of the commonly used header or substrate material such as copper, nickel-plated copper, gold, nickel, silver plated molybdenum, metallised beryllia and alumina are acceptable. The substrate must be freed of oxides prior to assembly by means of a chemical clean. It should not be necessary to clean the die before assembly. Mounting is generally accomplished in a profiled belt furnace. The furnace zone settings will depend upon hybrid mass density, jigging and belt speed. The die temperature must not exceed 350C, not be in the range of 300 to 350C for greater than 5 minutes. Anitrogen atmosphere is recommended for glass passivated chips although forming gas (nitrogen 85% hydrogen 15%) is acceptable. The forming gas atmosphere could also be used for silicone rubber passivated chips when soldered without flux or solder cream. For fast recovery diodes lead-indium solder is recommended. The round chips are also available optionally with- aluminium metallisation suitable for compression bond encapsulation. For details contact your local Sales Office. ENCAPSULATION Prior to encapsulation, the die/asssembly must be cleaned of any solder residue and must be moisture free, (Leakage is particularly sensitive to surface moisture). A high grade electronic coating must then be applied before any final encapsulating material. If the final package is plastic, be careful that the material used is compatible both organically and thermally with the chip passivation. CONCLUSION The use of thyristor and diode chips in hybrid assemblies can result in significant reductions in overall package size. Several dice can readily be mounted on the same heatsink or to parallel devices. Power semiconductor operated advantages can thus be realised in very compact custom configurations. MEDIUM POWER RECTIFIER JUNCTIONS TABLE 8: MEDIUM POWER PRE-PASSIVATED STANDARD RECOVERY RECTIFIER JUNCTIONS Junction Equivalent Device Series Package is shown to Figure Passivation IF(AV) Voltage Range Part No: Indicate power capability only A v PD150.... 6F, 12F, 16F 44a 16 100 to 1600 PD180.-... 21PT, 4AF, 36MB-A, P100 44b 25 100 to 1600 PD210.... BAF, 40HF 44C Silicone 40 100 to 2000 PD280.... 70HF 44d Rubber 70 100 to 2000 PD350.... 85HF, IRKH/L41-56, IRKD/E5-71, T40HF, TVOHF A4e 90 100 to 2000 PD480.... IRKH/L71-91, IRKD/E91, T8SHF, T110HF 44f 120 100 to 2000 7-02-05"Diode, Thyristor and Triac Junctions ~ INTERNATIONAL RECTIFIER 2bE D MM@ 4855452 0010241 3 T-o01-05 TABLE 9: > MEDIUM POWER PRE-PASSIVATED FAST RECOVERY RECTIFIER JUNCTIONS' 7 ~O3~O5 INTERNATIONAL RECTIFIER |TQR Junction Equivalent Device Series Package is shown to Figure Passivation IF(AV) Voltage Range Part No: indicate power capability only A Vv FD150-... 6FL, 12FL, 16FL 45a 16 100 to 1000 FD210-... 40HFL 45b Silicone 40 100 to 1000 FD280.... 7OHFL 45c Rubber 70 100 to 1000 FD350.... 85HEL, IRKD/ELS56-71, T40HFL, T7OHFL 45d 90 100 to 1000 *see table for available try, MEDIUM POWER THYRISTOR JUNCTIONS TABLE 10: MEDIUM POWER SQUARE GLASS PASSIVATED CENTRE GATE THYRISTOR JUNCTIONS Junction Equivalent Device Series Package is shown to Figure Passivation IT(RMS) Voltage Range Part No: Indicate power capability only A Vv {RCI210-. 10RIA, 16RIA, 22RIA, 26RIA, P100 46a Glass 40 100 to 1200 IRCI350-. IRKT/H/L41-56, TSORIA, T70RIA, 50RIA 46b 110 100 to 1200 TABLE 11: MEDIUM POWER SQUARE GLASS PASSIVATED CORNER GATE THYRISTOR JUNCTIONS Junction Equivalent Device Series Package is shown to Figure Passivation IF(AV) Voltage Range Part No: Indicate power capability only A IRCI230-. IRKT/H/L26 47a Glass 40 100 to 1200 IRC1480-, IRKT/H/L71-91, TSORIA 47b 140 100 to 1200 TABLE 12: , MEDIUM POWER SQUARE GLASS PASSIVATED TRIAC JUNCTIONS Junction Equivalent Device Series Package is shown to Figure Passivation IF(AV) Voltage Range Part No: indicate power capability only A TRIAC210-. | B25AC 48a Glass 25 400 to 1200 TRIAG350-. | 50AC, TSOAC 48b 50 400 to 1200 VOLTAGE CODES RECOVERY TIME CODES Voltage | Code Die trr Voltage Code Number ns Vv 100V 10 200V 20 FD150 90 600 $02 400V 40 600V 60 ; 225 1000 $05 800V 80 10Q0V 100 FD210 70 600 s02 1200V 120 - 1400V 140 180 1000 S05 1600V 160 . 1800V 180 FD280 60 600 $02 2000V 200 150 1000 $05 FD350 50 600 $02 120 1000 $05 trp test conditions: Ty = 25C, ip = 1A to VR = 30V, -digjat = 100Aus PART NUMBERING To complete Part Number add voltage code and try code where applicable. e.g. PD280-80, IRCI210-120, FD210-60S02 etc. 47|TeaR Diode, Thyristor NATIONAL RECTIFIER . . INTERNAT! and Triac Junctions INTERNATIONAL RECTIFIER ChE D M@@ 4855452 O010e82 5 Mm T- ol -05 POWER SEMICONDUCTOR JUNCTION DIMENSIONS T-O 3 -O5 44 i co < LU C ml _ ed freee Figure Die Part A B Cc Number (Typical) 44a PD150.... 0.150/3.81 0.134/3.40 0.010/0,25 44b PD180.... 0.180/4.57 0.164/4.17 0.010/0.25 44c PD210.... 0.210/5.33 0.194/4.93 0.010/0,25 44d PD280.... 0.280/7.11 0.264/6.71 0.010/0.25 44e PD350.-... 0.350/8.89 0.334/8.48 0.010/0,25 44f PD480.... 0.480/12.19 0.464/11.79 0.010/0.25 45 | A ao <x I C ee _ ew] Figure Die Part A B Cc Number + 0,002/0.05 (Typical) (Maximum) 45a FD150.... 0.150/3.81 0.138/3.50 0.010/0.25 45b FD210.... 0.210/5.33 0.193/4.90 0.010/0.25 45c FD280.... 0.280/7.11 0.266/6.80 0.010/0.25 46d FD350.... 0.350/8.89 0.336/8.50 0.010/0.25 18Diode, Thyristor and Trlac Junctions INTERNATIONAL RECTIFIER | TOR ~ INTERNATIONAL RECTIFIER 2e6bE D M@@ 4855452 G010283 7 mt T-O)-05 POWER SEMICONDUCTOR JUNCTION DIMENSIONS cont'd T-03-05 6 | [ ) a < LY 0.010/0.20 A 0.013/0.35 panes Figure Die Part A B CG D Number (Typical) (Typical) 46a IRCI210.... 0.210/5.33 0.170/4.32 0.038/0.81 0.064/1.62 46b IRCI350.... 0.350/8.89 0.310/7.87 0.040/1.02 0.080/2.03 47 I | | o S a < | Wa | 0.006/0.16(IRCI230) C 0.010/0.25(IRCI480) ; 0.016/0.40(IRCI230) [ _ | | __ 0.013/0.35(IRC1480) B See A ee, Figure Die Part A B Cc D Number 47a IRCI230.... 0.230/5.84 0.190/4.83 0.159/4.04 0.171/4.34 47b IRCI480.... 0.480/12.19 0.404/10.26 0.299/7.60 0.355/9.02 19TaR | INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER ebE D Diode, Thyristor and Triac Junctions POWER SEMICONDUCTOR JUNCTION DIMENSIONS contd T-63 -65 48 Th B 0.010/0.25 A E Figure Die Part A B Cc D E Number max 48a TRIAC210.... 0.210/5.33 0.170/4.32 0.038/0.97 0.064/1.63 0.016/0.41 48b TRIAC3850.... 0.350/8,89 0.310/7.87 0.040/1.02 0.118/3.00 0.013/0.33 JUNCTION CARRIER QUANTITIES Basic Part Number Quantity per Carrier FD150.-... 360 FD210.-... 195 FD280.... 120 FD350-... 100 IRCI210-.... 1000 IRCI230-... 1000 IRCI350-... 1000 IRCI480-.... 1000 PD150.-... 1000 PD180.... 4000 PD210-... 195 PD280.... 120 PD350.... 100 PD480-... 49 TRIAG210-... 1000 TRIACS50.-... 1000 Please note that junctions are only sold in multiples of the carriers shown above. 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