MPSH11/MMBTH11, Rev. B
NPN RF Transistor
This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100 µA to
10 mA range to 300 MHz, and low frequency drift common-
base VHF oscillator applications with high output levels for
driving FET mixers. Sourced from Process 47.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Vol t age 25 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 3.0 V
ICCollector Current - Continuous 50 mA
TJ, Tst
g
Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSH11 *MMBTH11
PDTotal Device Dissipation
Derate above 25°C350
2.8 225
1.8 mW
mW/°C
RθJC Thermal Resistance, Junct ion to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
MPSH11
CEBTO-92
MMBTH11
C
B
E
SOT-23
Mark: 3G
2002 Fairchild Semiconductor Corporation
MPSH11 / MMBTH11
3
MPSH11/MMBTH11, Rev. B
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(
BR
)
CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 25 V
V
(
BR
)
CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 30 V
V
(
BR
)
EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.0 V
ICBO Collector Cutoff Current VCB = 25 V, IE = 0 100 nA
IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 4.0 mA, VCE = 10 V 60
VCE(sat)Collector-Emitter Saturation Voltage IC = 4.0 mA, IB = 0.4 mA 0.5 V
VBE(on)Base-Emitter On Vo lta ge IC = 4.0 mA, VCE = 10 V 0.95 V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
fTCurrent Gain - Bandwidth Product IC = 4.0 mA, VCE = 10 V,
f = 100 MHz 650 MHz
Ccb Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.7 pF
Crb Common-Base Feedba ck Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.6 0.9 pF
rb묬cCollector Ba se Time Constant IC = 4.0 mA, VCB = 10 V,
f = 31.8 MHz 9.0 pS
Typical Characteristics
NPN RF Transistor
(continued)
MPSH11 / MMBTH11
Co llecto r-Emi tter Satu r ation
Vo ltage vs C o ll e ctor Cu r rent
0.1 1 10 20 30
0.05
0.1
0.15
0.2
I - COLLECTOR CU R REN T (mA )
V - COLLECTOR -EMI TTER VOLTA GE (V)
CESAT
C
β
ββ
β= 10
125 °C
- 40 °C
25
캜
캜캜
캜
DC Current Gain
vs Collector Current
0.01 0.1 1 10 100
0
50
100
150
200
250
300
I - COLLECTOR CURRENT ( mA)
h - DC PULSED CURRENT GAIN
FE
C
V = 5V
CE
125 °C
- 40 °C
25
캜
캜캜
캜
MPSH11/MMBTH11, Rev. B
Typical Characteristics (continued)
Ca pacitance vs
Reverse Bias Vol tage
0.1 1 10 50
0
0.6
1.2
1.8
2.4
3
REVERSE BIAS VOLTAGE (V)
CAPACI TANCE (pF)
f = 1 . 0 M H z
C
CB
C
ibo
Cont our s of C ons ta nt G ai n
Ban dw idt h Product ( f )
0.1 1 10 100
0.1
1
10
50
I - COLLECTOR CURRENT (mA)
V - CO LLEC TOR V OL TAGE (V)
CE
C
T = 25 C
A
T
º100 MHz
200 MHz
300 MHz 400 M Hz
500 M Hz
600 M Hz
700 M Hz
800 M Hz
900 M Hz
10 00 M Hz
Power Dissipation vs
Ambien t Temp erature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERAT URE ( C)
P - POWER DISSIPATIO N (mW)
D
SO T-2 3
TO-92
°
Co ll ector Cut-Off Cur rent
vs Amb ien t Temperatur e
25 50 75 100 125 150
0.1
1
10
T - AM BIENT TE MPERATURE ( C)
I - COLLECTOR C URRENT (nA)
A
V = 30V
CB
°
CBO
Base-Emitter Satu ratio n
Voltage vs Collector Current
0.1 1 10 20 30
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRE NT (mA )
V - B ASE-EMITTER VOLTAGE (V)
BESAT
125 °C
- 40 °C
25
캜
캜캜
캜
C
β
ββ
β= 10
B ase-Em itter ON Vo ltag e vs
Colle c tor Cur re nt
0.01 0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - B ASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5.0V
CE
125 °C
- 40 °C
25
캜
캜캜
캜
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
3
MPSH11/MMBTH11, Rev. B
Common Emitter Y Parameters
Input Admittance vs
Coll ector Current
0 4 8 121620
0
2
4
6
8
10
12
14
I - C OLLECTOR CUR RENT (mA)
Y - INPUT ADM ITTANCE (mm hos)
ie
C
V = 1 5V
CE
f = 45 MH z
b
ie
g
ie
I nput Admi ttan ce vs
Collector Current
0246810
0
4
8
12
16
20
24
I - COLLECTOR CURRENT (mA)
Y - IN PUT ADMIT TANCE (m mhos )
ie
C
V = 10V
CE
f = 200 MHz
b
ie
g
ie
Input Admittance vs
Collec t o r Vo lta g e
048121620
0
4
8
12
16
20
24
28
V - COLLECTOR VOLTAGE
Y - IN PUT ADMI T TAN CE (m mhos )
ie
CE
I = 7.0 mA
C
f = 200 MHz
b
ie
g
ie
I npu t Admittanc e vs
Frequency
50 100 200 500 1000
0
4
8
12
16
20
f - FRE QU ENCY (MH z )
Y - IN PUT ADM IT TAN CE (mmhos )
ie
I = 7.0 mA
C
b
ie
g
ie
V = 15V
CE
Forward Transfer Admit tance
vs Col lector Current
0 4 8 12 16 20 24
1
10
100
200
500
I - COLLECTOR CURRENT (mA)
Y - F ORWA RD TR AN S ADMIT TAN CE (m mho s )
fe
-b
fe
V = 15V
CE
C
f = 45 MH z
g
fe
Forward T ransfer Admit tance
vs Collector Cu rr en t
0246810
0
20
40
60
80
100
120
I - COLLECTOR CURRENT (mA)
Y -FORW ARD TRANS ADMITTANCE (mmhos)
fe
-b
fe
V = 10V
CE
C
f = 200 MH z
g
fe
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
MPSH11/MMBTH11, Rev. B
Common Emitter Y Parameters (continued)
Forward Transfer Admittance
v s Coll ector Voltag e
048121620
0
20
40
60
80
100
120
140
V - COLLECTO R VOLTAGE (V)
Y -F ORWA RD TRANS ADMI T TANCE (m mho s)
fe
-b
fe
CE
g
fe
I = 7.0 mA
C
f = 4 5 MHz
Fo rw ard Transfer Admit tance
vs Frequen cy
50 100 200 500 1000
0
20
40
60
80
100
120
140
f - F REQU ENC Y (MH z )
Y -FORWA RD TR AN S ADMIT TANCE (mm ho s )
fe
I = 7.0 mA
C
g
fe
V = 15V
CE
-b
fe
R everse T r ansfer Admittance
vs Co l lector Cu r r en t
0 4 8 12 16 20
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
I - COLLECTOR CURRENT (mA)
Y -REVERSE TRA NS ADMITTANCE (m mhos)
re
-g
re
C
V = 15V
CE
f = 4 5 MHz
-b
re
R everse Transfer Admit tance
vs Col lector Current
0246810
0
0.1
0.2
0.3
0.4
0.5
0.6
I - C OLLEC TO R CURR ENT ( mA)
Y -REVERS E TRANS ADM ITTANCE (mmhos)
re
-g
re
C
V = 10V
CE
f = 200 MHz -b
re
R everse Transfer Admittance
vs Co llector Voltage
0 2 4 6 8 10 12 14 16 18 20
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.36
0.4
V - CO L LECTOR V OL TAG E (V)
Y -REVERSE TR ANS ADMITTANCE (mmhos)
re
-g
re
CE
-b
re
I = 7.0 mA
C
f = 45 MH z
R everse T ransfer Admittance
vs Frequency
50 100 200 500 1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
f - F RE QU ENC Y (MH z)
Y -RE VERSE TRANS ADM ITTANCE (mmhos)
re
-g
re
-b
re
I = 7.0 m A
C
V = 15V
CE
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
3
MPSH11/MMBTH11, Rev. B
Common Emitter Y Parameters (continued)
Outp u t Ad m ittan ce vs
Collecto r Cur r ent
0 4 8 12 16 20 24
1
10
100
1000
I - COLLECTOR CURRENT (mA)
Y - OUTPUT ADMITTANCE (mmhos)
oe
C
V = 15V
CE
f = 45 MHz
b
oe
g
oe
Outpu t Admittance vs
Collector Current
0246810
0.1
0.2
0.5
1
2
5
I - C OLLECTO R CURR ENT (mA)
Y - OUTPUT ADMITTANCE (mmhos)
oe
C
V = 1 0V
CE
f = 20 0 MHz b
oe
g
oe
Output A d mittanc e vs
Collect or Vo l ta ge
0 4 8 12 16 20 24
10
100
1000
10000
V - COLLEC TOR V OL TAGE (V )
Y - OUTP UT ADMITTANC E (mmhos )
oe
CE
b
oe
g
oe
I = 7 .0 m A
C
f = 45 MHz
Output Admittance
vs Frequency
50 100 200 500 1000
10
100
1000
10000
f - F RE QU ENC Y (MH z)
Y - OUTPUT ADMITT ANCE (mmhos)
oe
I = 7.0 m A
C
V = 15V
CE
b
oe
g
oe
Power Gain and Noise Figure
vs Col lect or Current
0246810
0
5
10
15
20
25
30
35
I - COLLECTOR CURRENT (mA)
POWER GAIN AND NOISE FIGURE (dB)
C
V = 12V
CC
f = 200 MH z
NF
PG
FIG. 2
Con v ersion G ain
vs Col lect or Current
012345
18
20
22
24
26
28
I - C OLLECTOR CUR RENT (mA)
C - CONVERSION GAIN (dB)
C
f = 45 MHz
IF
GE
f = 200 MHz
O
f = 245 MHz
LO
V = 1 5V
CE
FIG. 1
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
MPSH11/MMBTH11, Rev. B
Test Circuits
FIGURE 1: Unneutralized 200 MHz PG and NF Test Circuit
200 mHz Output into
50Ω
200 mHz
Input
VCC = 12 V
1000 pF
1000 pF
0.8-10 pF
RS
RL
100 pF
1000 pF
1000 pF
2.2 KΩΩ
ΩΩ
Ω
390 ΩΩ
ΩΩ
Ω
270 ΩΩ
ΩΩ
Ω
L1
L2
VBB
L1 - Ohmite Z-235 RFC
L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1
1/2 turns from cold side
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
3
MPSH11/MMBTH11, Rev. B
Test Circuits (continued)
1000 pF 1000 pF
0.002 µµ
µµ
µF4.0-30 pF
1000 pF
VCC = 12 V
2.2 KΩΩ
ΩΩ
Ω
1/2 W
R.F. Beads
50 ΩΩ
ΩΩ
Ω
Input
50 ΩΩ
ΩΩ
Ω
Output
VAGC
390 ΩΩ
ΩΩ
Ω
1/2 W
2KΩΩ
ΩΩ
Ω
T1
270 ΩΩ
ΩΩ
Ω
1/2 W
T1 - Q3 T oroid 4:1 ratio
8 turns Pri. 2 turns Sec. }No. 22 wire
FIGURE 2: 45 MHz Power Gain Circuit
200 mHz Output into
50Ω
RFin
LOin
2.0 pF
300 pF
1000 pF
L1
47 KΩΩ
ΩΩ
Ω
245 mHz
Input into
50Ω
VCE
VBB
T1
1.1 pF 20pF
1000 pF
45 mHz Output
into 50Ω
VCE = 15 V
FIGURE 3: 200 MHz Conversion Gain T est Circuit
L1 - Ohmite RFC Z235
T1 - Primary 5 turns No. 34 wire 1/4 inch
diameter. Secondary runs No. 34 wire close
wound over a Q100 core (10.7 mHz). When
terminated on secondary side with 50Ω primary
measures 1.5 K, -25 pF.
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
