T1P2701012-SP
10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor
www.triquint.com/powerband
Preliminary Data Sheet
Subject to Change
Introduc on
The T1P2701012-SP is a POWERBANDTM discrete pHEMT,
deple on mode, RF Power transistor designed to operate from
500MHz to 3GHz in wide-band circuits. The device has an in-
stantaneous band-width P1dB output power of 10wa s across
the en re band when operated in the TriQuint wide-band test
fi xture. The T1P2701012-SP can also be used in narrow band ap-
plica ons and is rated at 15Wa s P1dB at 3GHz.
Figure 1. Available Packages
Features
— Excep onal Instantaneous band-width performance from
500MHz – 3GHz
— Increased effi ciency results in signifi cant advantages
— Smaller and lighter systems
— Reduced system component costs
— Reduced energy consump on
— Typical Performance ra ngs
— Wide-Band 500MHz-3GHz
(as tested in TriQuint Wideband Fixture)
— 10dB gain
— 50% Effi ciency
— 10Wa P1dB
— Narrow Band up to 3GHz
— 12dB gain
— 60% effi ciency
— 15Wa P1dB
Table 1. Maximum Ra ngs
Sym Parameter Value Notes
V+Posi ve Supply Voltage 12.5 V 2/
V-Nega ve Supply Voltage Range –5V to 0V
l+Posi ve Supply Current 5.6A 2/
| lG | Gate Supply Current 70 mA
PDPower Dissipa on See note 3 2/ 3/
TCH Opera ng Channel Temperature 150o C 4/
1/ These ra ngs represent the maximum operable values for this
device.
2/ Combina ons of supply voltage, supply current, input power,
and output power shall not exceed PD.
3/ For a median life me of 1E+6 hrs, Power dissipa on is limited
to: PD(max) = (150 °C – TBASE °C) / 8.3 (°C/W)
4/ Junc on opera ng temperature will directly aff ect the device
median me to failure(TM). For maximum life, it is recom-
mended that junc on temperatures be maintained at the lowest
possible levels.
Table 2. Thermal Informa on
Parameter Test Condi ons TCH
(°C)
θJC
(°C/W)
TM
(HRS)
θJC Thermal Resis-
tance (channel to
backside of carrier)
Vd = 10 V
Idq = 900 mA
Pdiss = 9 W
145 8.3 1.6E+6
T1P2701012-SP
10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor
www.triquint.com/powerband
Preliminary Data Sheet
Subject to Change
Electrical Characteristics
Recommended operating conditions apply unless otherwise specifi ed: TA = 25 °C.
Table 3. dc Characteris cs
Parameter Symbol Min Typ Max Unit
Saturated Drain Current Idss — 3000 — mA
Transconductance Gm — 4000 — mS
Pinch-off Voltage VP-1.35 -1 -0.65 V
Breakdown Voltage Gate-Source VBGS -30 — -8 V
Breakdown Voltage Gate-Drain VBGD -30 — -15 V
Table 4. RF Characteris cs
Parameter Symbol Min Typ Max Unit
Functional Tests, Instantaneous Band-Width (Tested in TriQuint’s Wide-Band Test Fixture)
Gain @ P1dB, 500MHz-3GHz
(VDS = 12 V, POUT = 10 W, IDD = 200 mA)
G — 10 — dB
P1dB, 500MHz-3GHz
(VDS = 12 V, POUT = 10 W, IDD = 200 mA)
P1dB — 10 — W
Power Added Effi ciency, 500MHz-3GHz
(VDS = 12 V, POUT = 10 W, IDD = 200 mA)
——45—%
Functional Tests, Narrow Band RF Performance (1GHz)
Gain
(VDS = 12 V, POUT = 15 W, IDQ = 200 mA)
G — 17 — dB
Output Power
(VDS = 12 V, 1 dB compression, IDQ = 200 mA)
P1dB — 15 — W
Drain Effi ciency
(VDS = 12 V, POUT = P1dB, IDQ = 200 mA)
— — 59 — %
Ruggedness
(VDS = 12 V, POUT = 15 W, IDQ = 200 mA, f = 500 MHz,
VSWR = 3:1, all angles)
— No degradation in output power.
T1P2701012-SP
10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor
www.triquint.com/powerband
Preliminary Data Sheet
Subject to Change
Typical Instantaneous Wideband Peformance Data, 500MHz-2.7GHz
(tested in TriQuint Wideband Fixture)
T1P2701012-SP
10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor
www.triquint.com/powerband
Preliminary Data Sheet
Subject to Change
Package Dimensions
Note: All dimensions in inches. Scale 8:1
.040
.360
.351
1
2
4
.090
.320
45°
.085
X
.087 .350
.063
.006
.090
