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2N4400 / MMBT4400
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Co llector-Emitter Voltage 40 V
VCBO Colle ctor-Base Vol t age 60 V
VEBO Emitter-Ba se Volt age 6.0 V
ICCollector Current - Continuous600 mA
TJ, Tstg Operating and Storage Junction Temperature Ra nge -55 to +150 °C
Symbol Characteristic Max Units
2N4400 *MMBT4400
PDTotal Device Dissipatio n
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resista nce, Junction to Case 83.3 °C/W
RθJA Thermal Resista nce , Junction to Ambient 200 357 °C/W
C
B
E
SOT-23
Mark: 83
MMBT4400
2N4400
CBETO-92
2001 Fairchild Semiconductor Corporation 2N4400/MMBT4400, Rev A
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Ba se Breakdown Voltage IC = 100 µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Volta ge IE = 100 µA, IC = 0 6.0 V
ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA
IBL Emitter Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA
ON CHARACTERISTICS*
hFE DC Current Gain VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 150 mA
VCE = 2.0 V, IC = 500 mA
20
40
50
20 150
VCE(sat)Collector-Emitter Satu ration Voltag e IC = 150 mA, IB =15 mA
IC = 500 mA, IB = 50 mA 0.40
0.75 V
V
VBE(sat)Base-Em itter Saturation Voltage IC = 150 mA, IB =15 mA
IC = 500 mA, IB = 50 mA 0.75 0.95
1.2 V
V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance VCB = 5.0 V, f = 140 kHz 6.5 pF
Cib Input Capacitance VEB = 0.5 V, f = 140 kHz 30 pF
hfe Small-Signal Cu rrent Gain IC = 20 mA, VCE = 10 V,
f = 100 MHz 2.0
hfe Small-Signal Cu rrent Gain VCE = 10 V, IC = 1.0 mA, 20 250
hie Input Impedance f = 1.0 kHz 0.5 7.5 KΩ
hre Voltage Feedback Ratio 0.1 8.0 x 10-4
hoe Output Admittance 1.0 30 µmhos
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
tdDelay TimeVCC = 30 V, IC = 150 mA,15ns
trRise Time IB1 = 15 mA ,VEB = 2 V
tsStorage Time VCC = 30 V, IC = 150 mA 225 ns
tfFa ll Time IB1 = IB2 = 15 mA 30 ns
20 ns
Typical Characteristics
Typical Pulsed Current Gain
vs Collector C urr e nt
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT ( mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Co l lec to r- Emitter Satu rat io n
Vol t age vs Coll ec tor Current
110100500
0.1
0.2
0.3
0.4
I - CO LL ECTO R CU RRENT ( mA)
V - COL LE C TOR-E MI TTER VOLT A GE (V )
CESAT
25 °C
C
β= 10
125 °C
- 40 °C
B a se-Emitter Saturation
Voltage vs Collector Cu r rent
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT ( mA)
V - B ASE-EMITTER VO LTA GE (V)
BESAT
C
β= 1 0
25 °C
125 °C
- 40 °C
Base-Emitter ON Volt ag e vs
Collector Cu rrent
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AM BIENT TEM PERATURE ( C)
I - CO L LECTOR CUR R ENT ( n A)
A
V = 40V
CB
CBO
°
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
0.1 1 10 100
4
8
12
16
20
RE VERSE BIAS VOLTAGE ( V)
CAP ACITANCE (pF)
f = 1 M H z
Cob
C
NPN General Purpose Amplifier
te
(continued)
2N4400 / MMBT4400
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPER AT URE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
Turn On and T ur n Off Ti mes
vs Collecto r Current
10 100 1000
0
80
160
240
320
400
I - COLLEC TO R CURREN T (mA)
TIM E ( nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 25 V
cc
S wi t ching Times
vs Col lector C urre n t
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME ( nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
V = 25 V
cc
tf
td
NPN General Purpose Amplifier
(continued)
2N4400 / MMBT4400
Typical Common Emitter Characteristics (f = 1.0kHz)
Commo n Emi tte r Ch aracteri st ics
0 102030405060
0
2
4
6
8
I - COLLECTOR CURRENT (mA)
CHAR. RELATIVE TO VALUES AT I = 10mA
V = 10 V
CE
C
C
T = 25 C
A o
hoe
h re
hfe
hie
Comm o n Emit te r Char acte ri stics
0 20406080100
0
0.4
0.8
1.2
1.6
2
2.4
T - AM BIENT TEMP ERATURE ( C)
CHAR. RELATIVE TO VALUES AT T = 25 C
V = 10 V
CE
A
A
I = 1 0 mA
C
hoe
hre
hfe
hie
o
o
Common Emi t ter Ch aracteristics
0 5 10 15 20 25 30 35
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
V - COLL ECTOR VOLTAGE (V)
CHAR . RELATIVE TO VALUES AT V = 10V
CE
CE
T = 25 C
A o
hoe
h re
h fe
hie
I = 10 mA
C
NPN General Purpose Amplifier
(continued)
2N4400 / MMBT4400
Test Circuits
30 V
1.0 KΩΩ
ΩΩ
Ω
16 V
0
≤≤
≤≤
≤ 200ns
≤≤
≤≤
≤ 200ns
500 ΩΩ
ΩΩ
Ω
200 ΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω
37 ΩΩ
ΩΩ
Ω
- 1.5 V
1.0 KΩΩ
ΩΩ
Ω
6.0 V
0
30 V
FIGURE 1: Saturated Turn-On Switching Timer
NOTE: BV = 5.0 V
FIGURE 2: Saturated Turn-Off Switching Time
EBO 1k
NPN General Purpose Amplifier
(continued)
2N4400 / MMBT4400
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
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This datasheet contains the design specifications for
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This datasheet contains preliminary data, and
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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The datasheet is printed for reference information only.
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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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