SPEC NO: DSAM8408 REV NO: V.2A DATE: APR/01/2015 PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Q.M.Chen ERP: 1301002538
Selection Guide
Note:
1. Luminous intensity / luminous Flux: +/-15%.
* Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1. Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
3. Wavelength value is traceable to the CIE127-2007 compliant national standards.
4. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or
premature failure.
Notes:
1. 1 / 10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA Description
Min. Typ.
Super Bright Yellow (AlGaInP) White Diffused
150000 400000
Common Anode,
Rt. Hand Decimal
*52000 *140000
SA10-11SYKWA
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength Super Bright Yellow 590 nm IF=20mA
λD [1] Dominant Wavelength Super Bright Yellow 590 nm IF=20mA
Δλ1/2 Spectral Line Half-width Super Bright Yellow 20 nm IF=20mA
C Capacitance Super Bright Yellow 20 pF VF=0V;f=1MHz
VF [2] Forward Voltage
(DP) Super Bright Yellow 4.0
(2.0)
5.0
(2.5) V IF=20mA
IR Reverse Current
(Per chip) Super Bright Yellow 10 uA VR=5V
(VR=5V)
Parameter Super Bright Yellow Units
Power dissipation
(Per chip) 75 mW
DC Forward Current 30 mA
Peak Forward Current [1] 175 mA
Reverse Voltage
(Per chip)
5
(5) V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds