Mar. 2016 Version 1.1 MagnaChip Semiconductor Ltd.
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MDHT4N25 N-channel MOSFET 250V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
V
Gate-Source Voltage
VGSS
V
Continuous Drain Current
TC=25oC
ID
A
TC=100oC
A
Pulsed Drain Current(1)
IDM
A
Power Dissipation
TC=25oC
PD
2.5
W
Derate above 25 oC
0.02
W/ oC
Peak Diode Recovery dv/dt(3)
dv/dt
5.5
V/ns
Repetitive Pulse Avalanche Energy(4)
EAR
0.25
mJ
Avalanche current(1)
IAR
0.83
A
Single Pulse Avalanche Energy(4)
EAS
52
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient(1)
RθJA
50
oC/W
*When mounted on the minimum pad size recommended (PCB Mount)
G
MDHT4N25
N-Channel MOSFET 250V, 0.83A, 1.75Ω
General Description
The MDHT4N25 uses advanced Magnachip’s
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDHT4N25 is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 250V
ID = 0.83A
RDS(ON) ≤ 1.75Ω @VGS = 10V
Applications
Power Supply
PFC
LED TV
S
D
D
SOT-223
Mar. 2016 Version 1.1 MagnaChip Semiconductor Ltd.
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MDHT4N25 N-channel MOSFET 250V
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDHT4N25URH
-55~150oC
SOT-223
Reel and Tape
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
250
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
3.0
-
5.0
Drain Cut-Off Current
IDSS
VDS = 250V, VGS = 0V
-
-
1
μA
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
-
100
nA
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 0.415A
1.38
1.75
Ω
Forward Transconductance
gfs
VDS = 30V, ID = 0.415A
-
0.91
-
S
Dynamic Characteristics
Total Gate Charge
Qg
VDS = 200V, ID = 3.6A, VGS = 10V
-
4.2
-
nC
Gate-Source Charge
Qgs
-
1.35
-
Gate-Drain Charge
Qgd
-
1.95
-
Input Capacitance
Ciss
VDS = 25V, VGS = 0V, f = 1.0MHz
-
146
-
pF
Reverse Transfer Capacitance
Crss
-
3
-
Output Capacitance
Coss
-
32
-
Turn-On Delay Time
td(on)
VGS = 5V, VDS = 125V, ID = 3.6A,
RG = 25Ω
-
8
-
ns
Rise Time
tr
-
21
-
Turn-Off Delay Time
td(off)
-
5
-
Fall Time
tf
-
16
-
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
IS
-
0.83
-
A
Source-Drain Diode Forward Voltage
VSD
IS = 0.83A, VGS = 0V
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
IF = 3.6A, dl/dt = 100A/μs(3)
-
110
-
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.34
-
μC
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤3.6A, di/dt≤300A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=120mH, IAS=0.83A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Mar. 2016 Version 1.1 MagnaChip Semiconductor Ltd.
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MDHT4N25 N-channel MOSFET 250V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
1
2
3
4
5
6
Notes
1. 250㎲ Pulse Test
2. TC=25℃
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10V
=15V
ID,Drain Current [A]
VDS,Drain-Source Voltage [V]
-50 0 50 100 150
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
0 1 2 3 4 5 6 7 8
0
1
2
3
4
VGS=20V
VGS=10V
RDS(ON) [Ω ]
ID,Drain Current [A]
2 3 4 5 6 7 8 9 10
0.1
1
10
-55℃
25℃
150℃
* Notes ;
1. Vds=30V
ID(A)
VGS [V]
0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
25℃
150℃
※ Notes :
1. VGS = 0 V
2.250s Pulse test
IDR
Reverse Drain Current [A]
VSD, Source-Drain Voltage [V]
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. VGS = 10 V
2. ID =0.415A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
Mar. 2016 Version 1.1 MagnaChip Semiconductor Ltd.
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MDHT4N25 N-channel MOSFET 250V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Transient Thermal Response Curve
10-1 100101102
10-2
10-1
100
101
10s
1s
100 s
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
10-5 10-4 10-3 10-2 10-1 100101102103
10-2
10-1
100
101
102
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC
* Rθ JC
(t) + TC
RΘ JA
=50℃/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
(t),
Thermal Response
t1, Rectangular Pulse Duration [sec]
0 1 2 3 4 5
0
2
4
6
8
10 50V
125V
200V
※ Note : ID = 3.6A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
1E-4 1E-3 0.01 0.1 110
0
100
200
300
400
500
600
700
800
single Pulse
RthJA = 50℃/W
TC = 25℃
Power (W)
Pulse Width (s)
Fig.11 Single Pulse Maximum Power
Dissipation
Fig.12 Maximum Drain Current vs. Case
Temperature
25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
ID, Drain Current [A]
TC, Case Temperature [℃]
110
0
200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
Mar. 2016 Version 1.1 MagnaChip Semiconductor Ltd.
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MDHT4N25 N-channel MOSFET 250V
Physical Dimension
SOT-223
Dimensions are in millimeters, unless otherwise specified
Mar. 2016 Version 1.1 MagnaChip Semiconductor Ltd.
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MDHT4N25 N-channel MOSFET 250V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
Mar. 2016 Version 1.1 MagnaChip Semiconductor Ltd.
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MDHT4N25 N-channel MOSFET 250V