ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
HIGH DENSITY MOUNTING
PHOTODARLINGTON
OPTICALLY COUPLED ISOLATORS
DESCRIPTION
The IS2702-1 is an optically coupled isolator
consisting of an infrared light emitting diode and
NPN silicon photodarlington in a space efficient
dual in line plastic package.
FEATURES
lMarked as FPD1.
lCurrent Transfer Ratio MIN. 600%
lIsolation Voltage (3.75kVRMS ,5.3kVPK )
lAll electrical parameters 100% tested
lDrop in replacement for NEC PS2702-1
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
IS2702-1
DB92860l-AAS/A3
22/4/02
Dimensions in mm
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.21.4VIF = 20mA
Reverse Voltage (VR) 5 VIR = 10µA
Reverse Current (IR)10µAVR = 4V
Output Collector-emitter Breakdown (BVCEO)35VIC = 0.1mA
Emitter-collector Breakdown (BVECO) 6 VIE = 10uA
Collector-emitter Dark Current (ICEO)1uA VCE = 10V
Coupled Current Transfer Ratio (CTR) 6007500%1mA IF , 2V VCE
Collector-emitter Saturation VoltageVCE (SAT) 1V20mA IF , 1mA IC
Input to Output Isolation Voltage VISO 3750 VRMS See note 1
5300 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time tr 418µsVCE = 2V ,
Output Fall Time tf 318µsIC = 2mA, RL = 100Ω
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 35V
Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.26mW/°C above 25°C)
Note 1 Measured with input leads shorted together and output leads shorted together.
DB92860l-AAS/A3
22/4/02
12/07/01 Appendix to Mini Flat Pack FPD-AAS/A1
TAPING DIMENSIONS
Description Symbol Dimensions in mm ( inches )
Tape wide W 12 ± 0.3 ( .47 )
Pitch of sprocket holes P0 4 ± 0.1 ( .15 )
Distance of compartment F
P2 5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
Distance of compartment to compartment P1 8 ± 0.1 ( .315 )
12/07/01 Appendix to Mini Flat Pack FPD-AAS/A1
CHARACTERISTIC CURVES
Fig.1 Forward Current vs. Ambient Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Fig.4 Forward Current vs. Forward
Fig.5 Current Transfer Ratio vs. Forward
Current Fig.6 Collector Current vs.
Collector-emitter Voltage
0
0
Ta=75 C
50 C 25 C
0 C
-25 C
Ta=25 C
Pc(MAX.)
5mA
2mA
1mA
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
Ic=0.5mA 1mA
3mA 7mA
5mA
Ta=25 C
30mA
Temperature
oo
10
20
30
40
50
60
0
50
100
150
200
000.5 1.0 1.5 2.0 2.5 4.03.0 3.5
1
2
3
4
5
6
7
8o
0
10.5 1.0 3.01.5 2.0 2.5
2
5
10
20
50
100
200
500 o
oo
o
o
0
0.1 0.2 0.5 1 2 5 10
1000
2000
3000
4000
5000
0
20
40
60
80
100
12345
OO
Voltage
IF=10mA
Forward current IF (mA) Collector-emitter voltage VCE (V)
Forward voltage V F (V)
Ambient temperature Ta ( C)
Forward current IF (mA)
Ambient temperature Ta ( C)
Forward current I F (mA)
Collector power dissipation Pc (mW)
Forward current I F (mA)
Currentor-emitter saturation voltage
VCE(sat)
Collector current I C (mA)
Current transfer ratio CTR ( %)
VCE=2V
Ta=25 C
05025 75 100 125-55 -55 12525050 75 100
12/07/01 Appendix to Mini Flat Pack FPD-AAS/A1
CHARACTERISTIC CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Ambient Temperature Fig.10 Response Time vs. Load
Fig.11 Frequency Response
0
Ta=25 C
tr
tf
td
ts
vs. Ambient Temperature
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Frequency f (kHz)
o
o
oo
o
40 60 80 100
50
100
150
0
0.2
0.4
0.6
0.8
1.0
20 40 60 80 100
0.2
0.0540 60 80 100 0.1 0.2 0.5 1 2 5 10
0.5
1
2
5
10
20
50
100
200
500
0.02
-20
-10
0
0.1 10 1001
Resistance
Test Circuit for Response Time
Test Circuit for Frequency Response
Input
Output
Input
Output
Vcc
td
tr tf
ts 90%
10%
Collecotr dark current I CEO (nA) Relative current transfer ratio ( %)
Response time ( s)
Voltage gain Av (dB)
Load resistance R L(k )
RL
RD
RL
RDOutput
Vcc
IF=1mA
VCE=2V IF=20mA
IC=1mA
VCE=2V
IC=10mA
VCE=2V
IC=2mA
Ta=25 C
20
1
10
100
1000
10000
100000
20
RL=10k 1k 100
Collector-emitter saturation voltage
VCE(sat) (V)
VCE=20V
12/07/01 Appendix to Mini Flat Pack FPD-AAS/A1
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
1 minute
2 minutes 1.5 minutes 1 minute
25 C
180 C
200 C
230 C
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).
