IS2702-1 HIGH DENSITY MOUNTING PHOTODARLINGTON OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS2702-1 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. Dimensions in mm FEATURES l Marked as FPD1. l Current Transfer Ratio MIN. 600% Isolation Voltage (3.75kVRMS ,5.3kVPK ) All electrical parameters 100% tested Drop in replacement for NEC PS2702-1 l l l APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 22/4/02 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB92860l-AAS/A3 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 35V 6V 150mW POWER DISSIPATION Total Power Dissipation 170mW (derate linearly 2.26mW/C above 25C) ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Output Coupled MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 5 1.2 Collector-emitter Breakdown (BVCEO) 35 Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 6 Current Transfer Ratio (CTR) 600 22/4/02 IF = 20mA IR = 10A VR = 4V V IC = 0.1mA 1 V uA IE = 10uA VCE = 10V 7500 % 1mA IF , 2V VCE 1 V 20mA IF , 1mA IC VRMS VPK See note 1 See note 1 s s VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100 3750 5300 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf Note 1 V V A 10 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 1.4 4 3 TEST CONDITION 18 18 Measured with input leads shorted together and output leads shorted together. DB92860l-AAS/A3 TAPING DIMENSIONS Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment 12/07/01 Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 12 0.3 ( .47 ) 4 0.1 ( .15 ) 5.5 0.1 ( .217 ) 2 0.1 ( .079 ) 8 0.1 ( .315 ) Appendix to Mini Flat Pack FPD-AAS/A1 CHARACTERISTIC CURVES Fig.1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs. Ambient Temperature 60 Collector power dissipation Pc (mW) 200 (mA) 50 Forward current I F 40 30 20 10 0 -55 0 25 50 75 100 125 150 100 50 0 -55 Ambient temperature Ta ( C) Ta= 75 C 50 C F Forward current I 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 3.0 Forward voltage V F (V) Fig.5 Current Transfer Ratio vs. Forward Current Fig.6 Collector Current vs. Collector-emitter Voltage 5000 100 I F = 10mA VCE = 2V Ta= 25 C o Ta= 25 C o 80 5mA Pc(MAX.) C (mA) 4000 3000 Collector current I Current transfer ratio CTR ( %) o o Forward current I F (mA) 2000 1000 60 2mA 40 1mA 20 0 0.2 0.5 1 2 Forward current I F (mA) 12/07/01 o 100 0 0 0.1 125 25 C 0C -25 C o 200 1 0 100 o (mA) 30mA 5mA 7mA 1mA 3mA 4 Ic=0.5mA Currentor-emitter saturation voltage VCE (sat) Ta= 25 C 6 2 75 500 o 3 50 Fig.4 Forward Current vs. Forward Voltage 8 5 25 Ambient temperature Ta ( C) Fig.3 Collector-emitter Saturation Voltage vs. Forward Current 7 0 O O 5 10 0 1 2 3 4 5 Collector-emitter voltage V CE (V) Appendix to Mini Flat Pack FPD-AAS/A1 CHARACTERISTIC CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 1.0 I F = 1mA VCE = 2V 100 50 0 20 40 60 80 Collector-emitter saturation voltage VCE (sat) (V) Relative current transfer ratio ( %) 150 I F = 20mA I C = 1mA 0.8 0.6 0.4 0.2 0 100 20 40 Ambient temperature Ta ( C) 500 VCE = 20V 200 s) 10000 100 VCE = 2V I C = 10mA Ta= 25 C tr o tf 50 Response time ( CEO (nA) 100 Fig.10 Response Time vs. Load Resistance 100000 Collecotr dark current I 80 Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Ambient Temperature 1000 100 20 td 10 5 ts 2 1 10 0.5 1 20 40 60 80 0.2 0.05 100 o 0.1 0.2 0.5 1 2 5 10 Load resistance R L (k ) Ambient temperature Ta ( C) Fig.11 Frequency Response Test Circuit for Response Time VCE = 2V I C = 2mA Ta= 25 C o Voltage gain Av (dB) 60 o o 0 Input Vcc Output Input RD RL 10% Output 90% td ts tr tf Test Circuit for Frequency Response -10 1k R L = 10k 100 Vcc RD -20 0.02 0.1 1 10 RL Output 100 Frequency f (kHz) 12/07/01 Appendix to Mini Flat Pack FPD-AAS/A1 TEMPERATURE PROFILE OF SOLDERING REFLOW (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. 30 seconds 230 C 200 C 180 C 1 minute 25 C 2 minutes 1.5 minutes 1 minute (2) When using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1). 12/07/01 Appendix to Mini Flat Pack FPD-AAS/A1