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FQT7N10
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristi cs
Symbol Parameter FQT7N10 Unit
VDSS Drain-Source Volt age 100 V
IDDrain Current - Continuous (TC = 25°C) 1.7 A
- Continuous (TC = 70°C) 1.36 A
IDM Drain Current - Pulsed (Note 1) 6.8 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 50 mJ
IAR Avalanche Current (Note 1) 1.7 A
EAR Repetitive Avalanche Energy (Note 1) 0.2 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
PDPower Dissipation (TC = 25°C) 2.0 W
- Derate above 25°C 0.016 W/°C
TJ, TSTG Operating and Storage Temperat ure Range -55 to +150 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Unit
RθJA Thermal Resistance, Junction-to-Ambient * -- 62.5 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
!"
!
!
!"
"
"
!"
!
!
!"
"
"
S
D
G
SOT-223
G
D
S
FQT7N10 N-Channel MOSFET
Description
This N-Channel enhancement mode power MOSFET
is produced using Fairchild Semiconductor®’s
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially
tailored to reduce on-state resistance, and to provide
superior switching performance and high avalanche
energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC
motor control, and variable switching power
applications.
Features
•1.7 A, 100 V, RDS(on)=350 mΩ(Max.) @VGS=10 V, ID=0.85 A
•Low Gate Charge (Typ. 5.8 nC)
•Low Crss (Typ. 10 pF)
•100% Avalanche Tested
March 2013
N-Channel QFET® MOSFET
100 V, 1.7 A, 350 mΩ
©2001 Fairchild Semiconductor Corporation
FQT7N10 Rev. C0
www.fairchildsemi.com
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 26mH, IAS = 1.7A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pu lse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA100 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.1 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 µA
VDS = 80 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 0.85 A -- 0.28 0.35 Ω
gFS Forward Transconductance VDS = 40 V, ID = 0.85 A -- 1.85 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 190 250 pF
Coss Output Capacitance -- 60 75 pF
Crss Reverse Transfer Capacit ance -- 10 13 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 50 V, ID = 7.3 A,
RG = 25 Ω
-- 7 25 ns
trTurn-On Rise Time -- 24 60 ns
td(off) Turn-Off De l a y Time -- 13 35 ns
tfTurn-Off Fall Time -- 1 9 50 ns
QgTotal Gate Charge VDS = 80 V, ID = 7.3 A,
VGS = 10 V
-- 5.8 7.5 nC
Qgs Gate-Source Charge -- 1.4 -- nC
Qgd Gate-Drain Charge -- 2.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 1.7 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.8 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 1.7 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, I S = 7.3 A,
dIF / dt = 100 A/µs
-- 70 -- ns
Qrr Reverse Recovery Charge -- 150 -- nC
FQT7N10 N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT7N10 Rev. C0
www.fairchildsemi.com
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10-1
100
25℃
150℃
※
N o te s :
1. V GS = 0V
2. 250μs Pulse Test
IDR , Reverse Drain Current [A]
VSD , Source-Drain Voltage [V]
246810
10-1
100
※ No te s :
1. VDS = 40V
2. 250μs Pulse T es t
-55℃
150℃
25℃
ID , D ra in Cu rre n t [A ]
VGS , G ate -Sou rce V o lta g e [V]
01234567
0
2
4
6
8
10
12
VDS = 50V
VDS = 80V
※ No te : I D = 7.3 A
VGS, G ate-Source Voltage [V ]
QG, Tota l G a te C h arg e [n C ]
10-1 100101
0
100
200
300
400
500 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 M H z
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 3 6 9 12 15 18
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
※ N o te : TJ = 25℃
VGS = 20V
VGS = 10V
RDS(on) [Ω],
Drain-Source O n-Resistance
ID , D ra in C u r re n t [A]
10-1 100101
100
V GS
T o p : 1 5 .0 V
10 .0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
B o tto m : 4 .5 V
※
N o te s :
1 . 2 5 0 μs Pulse Test
2. TC = 25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. C apacitance C haracterist ics Figure 6. Ga te Charge Characteris ti cs
Figu re 3. On-R esistance Variat ion vs.
Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Characteri st ic s
FQT7N10 N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT7N10 Rev. C0
www.fairchildsemi.com
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ No te s :
1. VGS = 10 V
2. ID = 0.85 A
RDS(ON) , (Nor malize d )
Drain-So urce O n-Res istance
TJ, Junction T emperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※
N o te s :
1. VGS = 0 V
2. ID = 250 μA
BV DSS , (No rma liz e d )
D rain-Sou rce Breakdow n Voltage
TJ, Junction Tem perature [oC]
10-5 10-4 10-3 10-2 10-1 100101102103
10-1
100
101
102
※ Notes :
1. Z θJC(t) = 62 .5 ℃/W M a x .
2 . Du ty Fa c to r , D=t1/t2
3. T JM - TC = PDM * ZθJC(t)
s in g le p u ls e
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Therm al R esponse
t1, Square W ave Pulse Duration [sec]
25 50 75 100 125 150
0.0
0.4
0.8
1.2
1.6
2.0
ID, D rai n Curre n t [A]
TC, Case Temperature [℃
]
10-1 100101102
10-2
10-1
100
101
100 ms
DC
10 ms
1 ms100 µs
Operation in This Area
is Limited by R DS(on)
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Breakdo w n Vol ta ge Variation
vs. Temperature Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Tr ans ient Ther m al Res pons e Cur ve
t1
PDM
t2
FQT7N10 N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT7N10 Rev. C0
www.fairchildsemi.com
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & W aveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & W aveforms
FQT7N10 N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT7N10 Rev. C0
www.fairchildsemi.com
Peak Diode Recovery dv /d t Test Ci rcuit & Wavefor m s
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
FQT7N10 N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT7N10 Rev. C0
www.fairchildsemi.com
Package Dimensions
3.00 ±0.10
7.00 ±0.30
0.65 ±0.20
0.08MAX
3.50 ±0.20
1.60 ±0.20
(0.46)
(0.89)
(0.60) (0.60)
1.75 ±0.20
0.70 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.95) (0.95)
2.30 TYP
0.25
MAX1.80
0°~10°
+0.10
–0.05
0.06 +0.04
–0.02
SOT-223
FQT7N10 N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT7N10 Rev. C0
www.fairchildsemi.com
FQT7N10 N-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQT7N10 Rev. C0
www.fairchildsemi.com
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Definition of Terms
2Cool™
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AX-CAP®*
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®*
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VCX™
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®
™
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Rev. I64
®
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