DVRN6056
Document number: DS30556 Rev. 5 - 2 1 of 5
www.diodes.com March 2010
© Diodes Incorporated
DVRN6056
VOLTAGE REFERENCE ARRAY
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead Free/RoHS Compliant Version (Notes 2 & 3)
• “Green” Device (Note 3)
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding Compound
(Note 3) UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
Maximum Ratings, NPN Transistor Element (Q1) @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 1) IC 600 mA
Maximum Ratings, Zener Element (Z1) @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Forward Voltage @ IF = 10mA VF 0.9 V
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1) PD 300 mW
Thermal Resistance, Junction to Ambient (Note 1) R
θ
JA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Product manufactured with date code WN (Week 45, 2009) and newer are built with Green Molding Compound and Lead-free plating. Product
manufactured prior to date code WO are built with Tin-Lead plating, Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View Device Schematic
A
1
E
1
K
1
NC
C
1
B
1
Q1
Z1
DVRN6056
Document number: DS30556 Rev. 5 - 2 2 of 5
www.diodes.com March 2010
© Diodes Incorporated
DVRN6056
Electrical Characteristics, NPN Transistor Element (Q1) @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V
(
BR
)
CBO 60 ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V
(
BR
)
CEO 40 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V
(
BR
)
EBO 6.0 ⎯ V IE = 100μA, IC = 0
Collector Cutoff Current ICEX ⎯ 100 nA
VCE = 35V, VEB
(
OFF
)
= 0.4V
Base Cutoff Current IBL ⎯ 100 nA
VCE = 35V, VEB
(
OFF
)
= 0.4V
ON CHARACTERISTICS (Note 4)
DC Current Gain hFE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
⎯
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.40
0.75 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(SAT) 0.75
⎯ 0.95
1.2 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Ccb ⎯ 6.5 pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Ceb ⎯ 30 pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 15 kΩ
VCE = 10V, IC = 1.0mA, f = 1.0kHz
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 40 500 ⎯
Output Admittance hoe 1.0 30 μS
Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = 10V, IC = 20mA, f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td ⎯ 15 ns
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA Rise Time t
r
⎯ 20 ns
Storage Time ts ⎯ 225 ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA Fall Time tf ⎯ 30 ns
Electrical Characteristics, Zener Element (Z1) @TA = 25°C unless otherwise specified
Zener Voltage Range (Note 4) Maximum Zener Impedance Maximum Reverse
Leakage Current (Note 4)
VZ @ IZT I
ZT Z
ZT @ IZT Z
Z
K
@ IZK = 0.5mA IR @ VR
Nom (V) Min (V) Max (V) mA ΩμA V
5.6 5.49 5.73 5 60 200 1.0 2.5
Notes: 4. Short duration pulse test used to minimize self-heating effect.
NPN Transistor Section (Q1)
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Total Device)
A
150
200
250
300
350
0
400
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
DVRN6056
Document number: DS30556 Rev. 5 - 2 3 of 5
www.diodes.com March 2010
© Diodes Incorporated
DVRN6056
NPN Transistor Section (Q1)
1.0
5.0
20
10
30
0.1 101.0 50
C
A
P
A
C
I
T
A
N
C
E (pF)
V, Ca pacit anc e C ha r act e ristics
R
REVERSE VO LTAGE (V)
Fig. 3 Typical
C
obo
C
ibo
f = 1MHz
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
110 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Col lector Cu r re nt
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
10.1 10 100
V , BASE-EMI
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On V oltage
vs. C ollector Cu r r ent
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
1
10
100
1,000
110100
I , COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
C
f,
G
AI
N
-BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
DVRN6056
Document number: DS30556 Rev. 5 - 2 4 of 5
www.diodes.com March 2010
© Diodes Incorporated
DVRN6056
Zener Section (Z1)
00.2 0.4 0.6 0.8 1.2
1.0
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(mA)
F
V , IN STANTANEOUS FO RW ARD VOLTAGE (V)
Fi g. 8 Typi c al F or war d C ha r acter i s t ics
F
100
10
1.0
0.1
0.01
1,000
Ordering Information (Note 5)
Part Number Case Packaging
DVRN6056-7-F SOT-26 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code P R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Package Outline Dimensions
SOT-26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ⎯ ⎯ 0.95
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
α 0° 8°
⎯
All Dimensions in mm
H1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: P = 2003)
M = Month (ex: 9 = September)
AH1
YM
A
M
JL
D
B C
H
K
DVRN6056
Document number: DS30556 Rev. 5 - 2 5 of 5
www.diodes.com March 2010
© Diodes Incorporated
DVRN6056
Suggested Pad Layout
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
Dimensions Value (in mm)
Z 3.20
G 1.60
X 0.55
Y 0.80
C1 2.40
C2 0.95
X
Z
Y
C1
C2
C2
G