IRFB260N - International Rectifier

Notes  through  are on page 8

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IRFB260N

SMPS MOSFET

HEXFET® Power MOSFET

VDSS RDS(on) max ID

200V 0.040Ω56A

PD - 94270

TO-220AB

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 56

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A

IDM Pulsed Drain Current 220

PD @TC = 25°C Power Dissipation 380 W

Linear Derating Factor 2.5 W/ °C

VGS Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt 10 V/ns

TJOperating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C

Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

lHigh frequency DC-DC converters

Benefits

Applications

lLow Gate-to-Drain Charge to Reduce Switching Losses

lFully Characterized Capacitance Including Effective COSS to

Simplify Design, (See App. Note AN1001)

lFully Characterized Avalanche Voltage and Current

8/29/01

Thermal Resistance Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 0.40

RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

RθJA Junction-to-Ambient ––– 62

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Parameter Min. Typ. Max. Units Conditions

gfs Forward Transconductance 29 ––– ––– SV

DS = 50V, ID = 34A

QgTotal Gate Charge ––– 150 220 ID = 34A

Qgs Gate-to-Source Charge ––– 24 37 nC VDS = 160V

Qgd Gate-to-Drain ("Miller") Charge ––– 67 100 VGS = 10V 

td(on) Turn-On Delay Time ––– 17 ––– VDD = 100V

trRise Time ––– 64 ––– ID = 34A

td(off) Turn-Off Delay Time ––– 52 ––– RG = 1.8Ω

tfFall Time ––– 50 ––– VGS = 10V 

Ciss Input Capacitance ––– 4220 ––– VGS = 0V

Coss Output Capacitance ––– 580 ––– VDS = 25V

Crss Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz

Coss Output Capacitance ––– 5080 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Coss Output Capacitance ––– 230 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz

Coss eff. Effective Output Capacitance ––– 500 ––– VGS = 0V, VDS = 0V to 160V 

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Typ. Max. Units

EAS Single Pulse Avalanche Energy––– 450 mJ

IAR Avalanche Current––– 34 A

EAR Repetitive Avalanche Energy––– 38 mJ

Avalanche Characteristics

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) ––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 34A, VGS = 0V 

trr Reverse Recovery Time ––– 240 360 ns TJ = 25°C, IF = 34A

Qrr Reverse RecoveryCharge ––– 2.1 3.2 µC di/dt = 100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Diode Characteristics

220 A

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– VV

GS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.040 ΩVGS = 10V, ID = 34A 

VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

––– ––– 25 µA VDS = 200V, VGS = 0V

––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V

IGSS

IDSS Drain-to-Source Leakage Current

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 110 100

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

0.1 110 100

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

3.0 5.0 7.0 9.0 11.0 13.0 15.0

VGS, Gate-to-Source Voltage (V)

1.00

10.00

100.00

1000.00

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 175°C

VDS = 15V

20µs PULSE WIDTH

-60 -40 -20 020 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

T , Junction Temperature

(

)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)



V =

I =

10V

56A

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

030 60 90 120 150

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)



I =

D34A



V = 40V

V = 100V

V = 160V

0.0 0.5 1.0 1.5 2.0

VSD, Source-toDrain Voltage (V)

0.10

1.00

10.00

100.00

1000.00

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

1 10 100 1000

VDS , Drain-toSource Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

110 100 1000

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance(pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = C

gs + Cgd, C

ds SHORTED

Crss

= C

Coss

= C

ds + Cgd

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Fig 10a. Switching Time Test Circuit

90%

10%

GS t

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

RGD.U.T.

10V

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150 175

T , Case Temperature ( C)

I , Drain Current (A)

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1



Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C



t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50



SINGLE PULSE

(THERMAL RESPONSE)

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Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

25 50 75 100 125 150 175

170

340

510

680

850

Startin

T , Junction Temperature

(

)

E , Single Pulse Avalanche Energy (mJ)



TOP

BOTTOM

14A

24A

34A

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P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P.W.

Period

Fig 14. For N-Channel HEXFET® Power MOSFETs

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit







RGVDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



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LEAD ASSIGNMENTS

1 - GAT E

2 - DRAIN

3 - SOURCE

4 - DRAIN

- B -

1.32

(

.052

)

1.22

(

.048

)

3X 0.55

(

.022

)

0.46

(

.018

)

2.92

(

.115

)

2.64

(

.104

)

4 .69

(

.185

)

4 .20

(

.165

)

3X 0.93

(

.037

)

0.69

(

.027

)

4.06

(

.160

)

3.55

(

.140

)

1.15

(

.045

)

MIN

6.47

(

.255

)

6.10

(

.240

)

3.78

(

.149

)

3.54

(

.139

)

- A -

10 .5 4

(

.415

)

10 .2 9

(

.405

)

2.87

(

.113

)

2.62

(

.103

)

15 .2 4

(

.600

)

14 .8 4

(

.584

)

14 .0 9

(

.555

)

13 .4 7

(

.530

)

3X 1.40

(

.055

)

1.15

(

.045

)

2.54

(

.100

)

0.36

(

.014

)

M B A M

1 2 3

NOTES:

1 D I M ENSION ING & T OLERAN CING PER AN SI Y 1 4.5M, 198 2. 3 O UT L INE C ON FOR MS T O JEDE C OUT L INE TO- 2 20AB.

2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREM ENTS DO NO T INCLUDE BURRS.

TO-220AB Part Marking Information

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/01

LOT CODE 17 89

ASSEMBLED ON WW 19, 19 97

IN TH E ASSEMBLY LINE "C"

INTERNATIONAL

RECTIFIER

LOGO

AS S EMBLY

LOT CODE

PART NU MBE R

DATE C ODE

YEAR 7 = 1997

WEEK 19

LINE C

EXAMPLE: T HIS IS AN IRF1010

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting TJ = 25°C, L = 0.78mH

RG = 25 Ω, IAS = 34A.

ISD ≤ 34, di/dt ≤ 480A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Notes:

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Coss eff. is a fixed capacitance that gives the same charging

time as Coss while VDS is rising from 0 to 80% V DSS

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Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/

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