DATA SH EET
Product specification
Supersedes data of 1998 May 19 1999 May 18
DISCRETE SEMICONDUCTORS
PDTC114YE
NPN resistor-equipped transistor
M3D173
1999 May 18 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114YE
FEATURES
•Built-in bias resistors R1 and R2 (typ. 10 kΩ and 47 kΩ
respectively)
•Simplification of circuit design
•Reduces number of components and board space.
APPLICATIONS
•Especially suitable for space reduction in interface and
driver circuits
•Inverter circuit configurations without use of external
resistors.
DESCRIPTION
NPN resistor-equipped transistor in a SC-75 (SOT416)
plastic package.
MARKING
TYPE NUMBER MARKING CODE
PDTC114YE 33
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground
3 collector/output
Fig.1 Simplified outline (SC-75; SOT416) and
symbol.
handbook, halfpage
MAM346
1
2
3
Top view
12
3R1
R2
Fig.2 Equivalent inverter symbol.
MGA893 - 1
13
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −50 V
VCEO collector-emitter voltage open base −50 V
VEBO emitter-base voltage open collector −10 V
VIinput voltage
positive −+40 V
negative −−6V
I
Ooutput current (DC) −100 mA
ICM peak collector current −100 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −150 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 May 18 3
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114YE
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 833 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =50V −−100 nA
ICEO collector cut-off current IB= 0; VCE =30V −−1µA
I
B
= 0; VCE =30V; T
j= 150 °C−−50 µA
IEBO emitter cut-off current IC= 0; VEB =5V −−150 µA
hFE DC current gain IC= 5 mA; VCE = 5 V 100 −−
V
CEsat collector-emitter saturation
voltage IC= 5 mA; IB= 0.25 mA −−100 mV
Vi(off) input-off voltage IC= 100 µA; VCE =5V −0.7 0.5 V
Vi(on) input-on voltage IC= 1 mA; VCE = 0.3 V 1.4 0.8 −V
R1 input resistor 7 10 13 kΩ
resistor ratio 3.7 4.7 5.7
Cccollector capacitance IE=i
e= 0; VCB =10V; f=1MHz −−2.5 pF
R2
R1
--------
1999 May 18 4
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114YE
Fig.3 DC current gain as a function of collector
current; typical values.
VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =−40 °C.
handbook, halfpage
MGM904
10−111010
2
I
C
(mA)
hFE
103
10
102
1
(1)
(2)
(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 20.
(1) Tamb = 100 °C.
(2) Tamb =25°C.
(3) Tamb =−40 °C.
handbook, halfpage
103
(2)
(3)
(1)
102
10
MGM903
10−111010
2
I
C
(mA)
VCEsat
(mV)
Fig.5 Input-off voltage as a function of collector
current; typical values.
VCE =5V.
(1) Tamb =−40 °C.
(2) Tamb =25°C.
(3) Tamb = 100 °C.
handbook, halfpage
10
(2)
(3)
(1)
1
10−1
MGM906
10−210−1110
I
C
(mA)
Vi(off)
(V)
Fig.6 Input-on voltage as a function of collector
current; typical values.
VCE = 0.3 V.
(1) Tamb =−40 °C.
(2) Tamb =25°C.
(3) Tamb = 100 °C.
handbook, halfpage
102
1
10
10−1
MGM905
10−111010
2
I
C
(mA)
Vi(on)
(V)
(1)(2)(3)
1999 May 18 5
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114YE
PACKAGE OUTLINE
UNIT A1
max bpcDEe
1H
EL
pQw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1 0.30
0.15 0.25
0.10 1.8
1.4 0.9
0.7 0.5
e
11.75
1.45 0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT416 SC-75
wM
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
EAB
B
vMA
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface mounted package; 3 leads SOT416
97-02-28
1999 May 18 6
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114YE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 May 18 7
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114YE
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 64
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 May 18 Document order number: 9397 750 05833
