FGH80N60FD2 - Fairchild Semiconductor

tm

FGH80N60FD2 Rev. A1

FGH80N60FD2 600V, 80A Field Stop IGBT

April 2008

Absolute Maximum Ratings

Notes :

(1) Repetitive rating : Pulse width limited by max. junction te mperature

Thermal Characteristics

Symbol Description Ratings Units

VCES Collector-Emitter Voltage 600 V

VGES Gate-Emitter Voltage ± 20 V

ICCollector Current @ TC = 25°C80 A

Collector Current @ TC = 100°C40 A

ICM (1) Pulsed Collector Current @ TC = 25°C 160 A

PDMaximum Power Dissipation @ TC = 25°C290 W

Maximum Power Dissipation @ TC = 100°C116 W

TJ Operating Junction Temperature -55 to +150 °C

Tstg Storage Temper ature Range -55 to +150 °C

TLMaximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds 300 °C

Symbol Parameter Typ. Max. Units

RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.43 °C/W

RθJC(Diode) Thermal Resistance, Junction-to-Case 1.45 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

G

C

E

ECG

COLLECTOR

(FLANGE)

FGH80N60FD2

600V, 80A Field Stop IGBT

Features

• High current capability

• Low saturation voltage: VCE(sat) =1.8V @ IC = 40A

• High input impedance

• Fast switching

• RoHS compliant

Applications

• Induction Heating Application

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new ses-

ries of Field Stop IGBTs offer the optimum performance for

Induction Heating applications where low conduction and

switching losses are essential.

2www.fairchildsemi.com

FGH80N60FD2 Rev. A1

FGH80N60FD2 600V, 80A Field Stop IGBT

Package Marking and Ordering Information

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Device Marking Device Package Packaging

Type Qty per Tube

Max Qty

per Box

FGH80N60FD2 FGH80N60FD2TU TO-247 Tube 30ea -

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

∆BVCES/

∆TJ

Temperature Coefficient of Breakdown

Voltage VGE = 0V, IC = 250uA -- 0.6 -- V/°C

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA

IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ±400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE 4.5 5.5 7.0 V

VCE(sat) Collector to Emitter

Saturation Voltage

IC = 40A, VGE = 15V -- 1.8 2.4 V

IC = 40A, VGE = 15V,

TC = 125°C-- 2.05 -- V

Dynamic Characteristics

Cies Input Capacitance VCE = 30V, VGE = 0V,

f = 1MHz

-- 2110 -- pF

Coes Output Capacitance -- 200 -- pF

Cres Reverse Transfer Capacitance -- 60 -- pF

Switching Characteristics

td(on) Turn-On Delay Time

VCC = 400 V, IC = 40A,

RG = 10Ω, V GE = 15V,

Inductive Load, TC = 25°C

-- 21 -- ns

trRise Time -- 56 -- ns

td(off) Turn-Off Delay Time -- 126 -- ns

tfFall Time -- 50 100 ns

Eon Turn-On Switching Loss -- 1 1.5 mJ

Eoff Turn-Off Switching Loss -- 0.52 0.78 mJ

Ets Total Switching Loss -- 1.52 2.28 mJ

td(on) Turn-On Delay Time

VCC = 400 V, IC = 40A,

RG = 10Ω, V GE = 15V,

Inductive Load, TC = 125°C

-- 20 -- ns

trRise Time -- 54 -- ns

td(off) Turn-Off Delay Time -- 131 -- ns

tfFall Time -- 70 -- ns

Eon Turn-On Switching Loss -- 1.1 -- mJ

Eoff Turn-Off Switching Loss -- 0.78 -- mJ

Ets Total Switching Loss -- 1.88 -- mJ

QgTo tal Gate Charge VCE = 400 V, IC = 40A,

VGE = 15V

-- 120 -- nC

Qge Gate-Emitter Charge -- 14 -- nC

Qgc Gate-Collector Charge -- 58 -- nC

3www.fairchildsemi.com

FGH80N60FD2 Rev. A1

FGH80N60FD2 600V, 80A Field Stop IGBT

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

VFM Diode Forward Voltage IF = 15A TC = 25°C- 1.2 1.5V

TC = 125°C- 1.0 -

trr Diode Reverse Recovery Time

IES =15A, dIES/dt = 200A/µs

TC = 25°C- 61 - ns

TC = 125°C - 125 -

Irr Diode Reverse Recovery Current TC = 25°C- 4.8 - ns

TC = 125°C- 8.4 -

Qrr Diode Reverse Recovery Charge TC = 25°C - 146 - nC

TC = 125°C - 525 -

4www.fairchildsemi.com

FGH80N60FD2 Rev. A1

FGH80N60FD2 600V, 80A Field Stop IGBT

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage

Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

C haract e ritic s

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Vo lta g e vs . Vge

Temperature at Variant Current Level

0246810

0

40

80

120

160

20V

TC = 25oC

12V

15V

10V

VGE = 8V

Collector Current , IC [A]

Collector-Emitter Voltage, VCE [V] 0246810

0

40

80

120

160

20V

TC = 125oC

12V

15V

10V

VGE = 8V

Collector Current , IC [A]

Co lle c to r -Em i tte r Vo lta g e , VCE [V]

25 50 75 100 125

1.0

1.5

2.0

2.5

3.0

3.5

80A

40A

20A

Common Emitter

VGE = 15V

Collector-Emitter Voltage, VCE [V]

Case Tem p erature, TC [oC] 4 8 12 16 20

0

4

8

12

16

20

IC = 20A

40A

80A

Common Emitter

TC = 25oC

Collector-Emitter Voltage, VCE [V]

Ga te -Emitte r Voltage , VGE [V ]

0123456

0

40

80

120

160

Co mmon Emitter

VGE = 15V

TC = 25oC

TC = 125oC

Collector Current, IC [A]

Co lle c to r -E mitter Vo lt ag e , V CE [V] 24681012

0

40

80

120

160 Common Emitter

VCE = 20V

TC = 25oC

TC = 125oC

Collector Current, IC [A]

Gate-Em i tter Voltage,VGE [V]

5www.fairchildsemi.com

FGH80N60FD2 Rev. A1

FGH80N60FD2 600V, 80A Field Stop IGBT

Typical Performance Characteristics (Continued)

Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance Characteristics

Figure 9. Gate Charge Characteristics Figure 10. SOA Characteeristics

Figure 11. Turn-Off Switching SOA Figure 12. Turn-On Characteristics vs.

Characteristics Gate Resistance

4 8 12 16 20

0

4

8

12

16

20

IC = 20A

40A

80A

Comm on E m itter

TC = 125oC

Collector-Emitter Voltage, VCE [V]

Gate-Emitter Voltage, VGE [V] 0.1 1 10

0

1000

2000

3000

4000

5000 Common E m itter

VGE = 0V , f = 1MHz

TC = 25oC

Crss

Coss

Ciss

Capacitance [pF]

Collector-Emitter Voltage, VCE [V] 30

1 10 100 1000

0.01

0.1

1

10

100

1ms

10 ms

DC

Single Nonrepetitive

Pulse TC = 25oC

Curves m ust be derated

linearly with incre as e

in temperature

10µs

100µs

Collector Current, Ic [A]

Collector-Emitter Voltage, VCE [V]

400

0 50 100 150

0

3

6

9

12

15 Comm on Em itter

TC = 25oC

300V 200V

Vcc = 100V

Gate-Emitter Voltage, VGE [V]

Ga te Cha r g e , Qg [nC ]

0 1020304050

10

100

200

Comm on Em itter

VCC = 400V, VGE = 15V

IC = 40A

TC = 25oC

TC = 125oC

td(on)

tr

Switching Time [ns]

Gate Resistance, RG [Ω]

5

1 10 100 1000

1

10

100

Safe O perating Area

VGE = 20V, TC = 100oC

Colle ctor Current, I C [A]

Collector-Emitter Voltage, VCE [V]

200

6www.fairchildsemi.com

FGH80N60FD2 Rev. A1

FGH80N60FD2 600V, 80A Field Stop IGBT

Typical Performance Characteristics (Continued)

Figure 13. Turn-Off Characteristics vs. Figure 14. Turn-On Characteristics vs.

Gate Resistance Collector Current

Figure 15. Turn-Off Characteristics vs. Figure 16. Switching Loss vs Gate Resistance

Collector Current

Figure 17. Switching Loss vs Collector Current

0 1020304050

10

100

1000

Common Emitter

VCC = 400V, VGE = 15V

IC = 40A

TC = 25oC

TC = 125oC td(off)

tf

Switching Time [ns]

Gate Resistance, RG [Ω]

2000

20 40 60 80

10

100

Common Emitter

VGE = 15V, RG = 10Ω

TC = 25oC

TC = 125oC tr

td(on)

Switching Time [ns]

Collector Current, IC [A]

200

20 40 60 80

100

500 Common E mitter

VGE = 15V , RG = 10Ω

TC = 25oC

TC = 125oC

td(off)

tf

Switching Time [ns]

Collector Current, IC [A]

20 0 1020304050

1

0.3

Common Em itter

VCC = 400V, VGE = 15V

IC = 40A

TC = 25oC

TC = 125oC Eon

Eoff

Switching Loss [mJ]

Gate Resistance, RG [Ω]

5

20 40 60 80

0.1

1

10 Common Emitter

VGE = 15V, RG = 10Ω

TC = 25oC

TC = 125oC

Eon

Eoff

Switching Loss [mJ]

Collector Current

,

I

C

[

A

]

7www.fairchildsemi.com

FGH80N60FD2 Rev. A1

FGH80N60FD2 600V, 80A Field Stop IGBT

Typical Performance Characteristics (Continued)

Figure 18. Transient Thermal Impedance of IGBT

Figure 19. Typical Forward Voltage Drop Figure 20. Stored Charge

Figure 21. Reverse Recovery Time Figure 22. Reverse Recovery Current

0123

0.1

1

10

TC = 25oC

TC = 125oC

Forward Voltage , VF [V]

Forward Current , IF [A]

100 200 300 400

0

200

400

600

800

1000

125oC

25oC

Stored Recovery Charge , Qrr [nC]

di/dt ,[A/µs]

100 200 300 400

20

40

60

80

100

120

140

160

125oC

25oC

Reverse Recovery Time, trr [ns]

di/dt, [A/µs]

5100 200 300 400

0

5

10

15

20

125oC

25oC

Reverse Recovery Current, Irr [A]

di/dt, [A/µs]

5

1E-5 1E-4 1E-3 0.01 0.1 1

1E-3

0.01

0.1

1

0.2

0.5

0.1

0.05

0.01

0.02

single pulse

Thermal Response [Zthjc]

Rectangular Pulse D uration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC

t1

PDM

t2

8www.fairchildsemi.com

FGH80N60FD2 Rev. A1

FGH80N60FD2 600V, 80A Field Stop IGBT

TO-247AB (FKS PKG CODE 001)

Mechanical Dimensions

FGH80N60FD2 600V, 80A Field Stop IGBT

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use

and is not intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO

IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE

OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE

RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,

SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT

THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which,

(a) are intended for su rgical implant into the body or (b) support

or sustain life, and (c) whose failure to perform when properly

used in accordance with instructions for use provided in the

labeling, can be reasonably expected to result in a significant

injury of the user.

2. A critical component in any component of a life support,

device, or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or system,

or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx®

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FPS™

FRFET®

Global Power ResourseSM

Green FPS™

Green FPS™ e-Series™

GOT™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroPak™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP-SPM™

Power220®

Power247®

POEWEREDGE®

Power-SPM™

PowerTrench®

Programmable Active Droop™

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

The Power Franchise®

™

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

UHC®

UniFET™

VCX™

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to

improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been dis-

continued by Fairchild Semiconductor.The datasheet is printed for refer-

ence information only.

tm

Rev. I28

tm

9www.fairchildsemi.com

FGH80N60FD2 Rev. A1