VS-MBRB4045CTPbF, VS-MBR4045CT-1PbF
www.vishay.com Vishay Semiconductors
Revision: 15-Jul-14 1Document Number: 94311
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Center tap TO-220, D2PAK and TO-262
packages
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-263AB (D2PAK), TO-262AA
IF(AV) 40 A
VR45 V
VF at IF0.58 V
IRM max. 95 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 20 mJ
TO-263AB (D2PAK) TO-262AA
Base
common
cathode
Anode Anode
Common
cathode
13
2
2
Base
common
cathode
Anode Anode
Common
cathode
13
2
2
V
S-MBRB4045CTPbFVS-MBR4045CT-1PbF
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform (per device) 40 A
IFRM TC = 118 °C (per leg) 40
VRRM 45 V
IFSM tp = 5 μs sine 900 A
VF20 Apk, TJ = 125 °C 0.58 V
TJRange -65 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRB4045CTPbF
VS-MBR4045CT-1PbF UNITS
Maximum DC reverse voltage VR45 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg IF(AV) TC = 118 °C, rated VR
20
A
per device 40
Peak repetitive forward current per leg IFRM Rated VR, square wave, 20 kHz, TC = 118 °C 40
Maximum peak one cycle non-repetitive
peak surge current per leg IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
900
10 ms sine or 6 ms rect. pulse 210
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 3 A, L = 4.4 mH 20 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 3A
VS-MBRB4045CTPbF, VS-MBR4045CT-1PbF
www.vishay.com Vishay Semiconductors
Revision: 15-Jul-14 2Document Number: 94311
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
20 A TJ = 25 °C 0.60
V
40 A 0.78
20 A TJ = 125 °C 0.58
40 A 0.75
Maximum instantaneous
reverse current IRM (1)
TJ = 25 °C
Rated DC voltage
1
mATJ = 100 °C 50
TJ = 125 °C 95
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 900 pF
Typical series inductance LSMeasured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ-65 to +150 °C
Maximum storage temperature range TStg -65 to +175
Maximum thermal resistance,
junction to case per leg RthJC DC operation 1.5
°C/W
Typical thermal resistance,
case to heatsink RthCS
Mounting surface, smooth and greased
(Only for TO-220) 0.50
Maximum thermal resistance,
junction to ambient RthJA DC operation
(For D2PAK and TO-262) 50
Approximate weight 2g
0.07 oz.
Mounting torque minimum Non-lubricated threads 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D2PAK MBRB4045CT
Case style TO-262 MBR4045CT-1
VS-MBRB4045CTPbF, VS-MBR4045CT-1PbF
www.vishay.com Vishay Semiconductors
Revision: 15-Jul-14 3Document Number: 94311
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
100
10
1000
IF - Instantaneous
Forward Current (A)
VFM - Forward Voltage Drop (V)
0.2 0.4 0.8 1.4 1.8 2.0
0.6 1.21.0 1.60
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.001
1
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520 40 45
25 30 35
0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
200
300
600
400
700
800
900
500
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
10 20 40
30
050
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.001
VS-MBRB4045CTPbF, VS-MBR4045CT-1PbF
www.vishay.com Vishay Semiconductors
Revision: 15-Jul-14 4Document Number: 94311
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
80
100
120
140
160
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
10 5 15 20
3025
0
DC
See note (1)
Square wave (D = 0.50)
Rated VR applied
0
2
10
16
18
14
12
6
4
8
20
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
1051520 3525 30
0
DC
RMS limit
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
VS-MBRB4045CTPbF, VS-MBR4045CT-1PbF
www.vishay.com Vishay Semiconductors
Revision: 15-Jul-14 5Document Number: 94311
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
2- Essential part number
3-
4- Current rating (40 = 40 A)
5-
8- None = tube (50 pieces)
TRL = tape and reel (left oriented - for D2PAK only)
Voltage rating (45 = 45 V)
PbF = lead (Pb)-free (for TO-262 and D2PAK tube)
7- None = D2PAK
-1 = TO-262
B = D2PAK
None = TO-262
7
7
None
= -1
6- CT = essential part number
3 = B
3 None
TRR = tape and reel (right oriented - for D2PAK only)
9-
P = lead (Pb)-free (for D2PAK TRR and TRL)
1- Vishay Semiconductors product
Device code
51 32 4 6 7 8 9
VS- MBR B 40 45 CT -1 TRL PbF
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95014
Part marking information www.vishay.com/doc?95008
Packaging information www.vishay.com/doc?95032
SPICE model www.vishay.com/doc?95296
Document Number: 95014 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
D2PAK, TO-262
Outline Dimensions
Vishay Semiconductors
DIMENSIONS - D2PAK in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC outline D2PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 95014
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 31-Mar-09
Outline Dimensions
Vishay Semiconductors D2PAK, TO-262
DIMENSIONS - TO-262 in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190
A1 2.03 3.02 0.080 0.119
b 0.51 0.99 0.020 0.039
b1 0.51 0.89 0.020 0.035 4
b2 1.14 1.78 0.045 0.070
b3 1.14 1.73 0.045 0.068 4
c 0.38 0.74 0.015 0.029
c1 0.38 0.58 0.015 0.023 4
c2 1.14 1.65 0.045 0.065
D 8.51 9.65 0.335 0.380 2
D1 6.86 8.00 0.270 0.315 3
E 9.65 10.67 0.380 0.420 2, 3
E1 7.90 8.80 0.311 0.346 3
e 2.54 BSC 0.100 BSC
L 13.46 14.10 0.530 0.555
L1 - 1.65 - 0.065 3
L2 3.56 3.71 0.140 0.146
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Revision: 08-Feb-17 1Document Number: 91000
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