PROFET® BTS 840 S2
Infineon technologies 1 of 15 2003-Oct-01
Smart High-Side Power Switch
Two Channels: 2 x 30mΩ
Current Sense
Product Summary Package
Operating Voltage Vbb(on) 5.0...34V
Active channels: one two parallel
On-state Resistance RON 30mΩ 15mΩ
Load Current (ISO) IL(ISO) 12A 24A
Current Limitation IL(SCr) 24A 24A
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input,
diagnostic feedback and proportional load current sense monolithically integrated in Smart SIPMOS
technology.
• Providing embedded protective functions
Applications
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• CMOS compatible input
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Fast demagnetization of inductive loads
• Logic ground independent from load ground
Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external
resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of Vbb protection
• Electrostatic discharge protection (ESD)
Diagnostic Functions
• Proportinal load current sense
• Diagnostic feedback with open drain output
• Open load detection in OFF-state with external resistor
• Feedback of thermal shutdown in ON-state
Vbb
Logic
Channel
1
Logic
Channel
2
IN1
ST1
IS1
IN2
ST2
IS2
GND
Load 1
Load 2
PROFET
OUT 1
OUT 2
P-DSO-20-12 (Power SO 20)
BTS 840 S2
Infineon technologies 2 2003-Oct-01
Functional diagram
Pin Definitions and Functions
Pin Symbol Function
1,10,
11,12,
Vbb Positive power supply voltage. For high
current applications the heat slug should be
used as Vbb connection.
3 IN1
7 IN2
Input 1,2, activates channel 1,2 in case of
logic high signal
16,17,
18,19 OUT1
12,13,
14,15 OUT2
Output 1,2, protected high-side power output
of channel 1,2. All pins of each output have to
be connected in parallel for operation
according ths spec (e.g. kilis). Design the
wiring for the max. short circuit current
4 ST1
8 ST2
Diagnostic feedback 1,2 of channel 1,2
open drain, invers to input level
2 GND1
6 GND2
Ground 1,2 of chip channel 1,2
5 IS1
9 IS2
Sense current output 1,2; proportional to the
load current, zero in the case of current
limitation of the load current
Heatslug
Vbb Positiv powersupply voltage. Good way to
design a very low thermal resistance.
Pin configuration
(top view)
Vbb 1 • 20 Vbb
GND1 2 19 OUT1
IN1 3 18 OUT1
ST1 4 17 OUT1
IS1 5 16 OUT1
GND2 6 Vbb 15 OUT2
IN2 7 14 OUT2
ST2 8 13 OUT2
IS2 9 12 OUT2
Vbb 10 11 Vbb
Heat slug
OUT1
overvoltage
p
rotection
logic
internal
volta
g
e su
pp
l
y
ESD
temperature
sensor
clamp for
inductive load
gate
control
+
charge
pump
current limit
Open load
detection
ST1
VBB
LOAD
IN1
PROFET
GND1
Control and protection circuit
of
channel 2
IN2
ST2
OUT2
Channel 1
Current
sense
GND2
IS2
IS1
R
O1
GND1
BTS 840 S2
Infineon technologies 3 2003-Oct-01
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 5) Vbb 43 V
Supply voltage for full short circuit protection
Tj,start = -40 ...+150°C Vbb 34 V
Load current (Short-circuit current, see page 5) IL self-limited A
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
RI2) = 2 Ω, td = 200 ms; IN = low or high,
each channel loaded with RL = 1.0 Ω,
VLoad dump3) 60 V
Operating temperature range
Storage temperature range Tj
Tstg -40 ...+150
-55 ...+150 °C
Power dissipation (DC)4) Ta = 25°C:
(all channels active) Ta = 85°C: Ptot 3.8
2.0 W
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C4),
IL = 4 A, EAS = 1.13J, 0 Ω one channel:
IL = 12 A, EAS = 430mJ, 0 Ω one channel:
IL = 24 A, EAS = 800mJ, 0 Ω two parallel channels:
see diagrams on page 10
ZL 100
4.4
2.0
mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST, IS:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
VESD 1.0
4.0
8.0
kV
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
Current through current sense pin (DC)
see internal circuit diagram page 9
IIN
IST
IIS
±2.0
±5.0
±14
mA
1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins a 150Ω
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is set up without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
BTS 840 S2
Infineon technologies 4 2003-Oct-01
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance
junction -case each channel: Rthjs -- -- 1 K/W
junction - ambient4) one channel active:
all channels active: Rthja --
-- 37
30 --
--
Electrical Characteristics
Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 5 A
each channel, Tj = 25°C:
Tj = 150°C:
two parallel channels, Tj = 25°C:
RON
--
27
54
14
30
60
15
mΩ
Output voltage drop limitation at small load
currents, see page 14
IL = 0.5 A Tj =-40...+150°C:
VON(NL)
--
50 -- mV
Nominal load current, ISO Norm
one channel active:
two parallel channels active:
ISO 10483-1, 6.7: Von =0.5V Tc = 85°C
IL(NOM)
11
22
12
24 -- A
Output current while GND disconnected or pulled up5);
Vbb = 30 V, VIN = 0,
see diagram page 10
IL(GNDhigh) -- -- 8 mA
Turn-on time6) IN
to 90% VOUT:
Turn-off time IN
to 10% VOUT:
RL = 12 Ω
ton
toff 25
25 70
80 150
200 µs
Slew rate on 6)
10 to 30% VOUT, RL = 12 Ω: dV/dton 0.1 -- 1 V/µs
Slew rate off 6)
70 to 40% VOUT, RL = 12 Ω: -dV/dtoff 0.1 -- 1 V/µs
5) not subject to production test, specified by design
6) See timing diagram on page 11.
BTS 840 S2
Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max
Infineon technologies 5 2003-Oct-01
Operating Parameters
Operating voltage7) Vbb(on) 5.0 -- 34 V
Undervoltage shutdown Vbb(under) 3.2 -- 5.0 V
Undervoltage restart Tj =-40...+25°C:
Tj =+150°C: Vbb(u rst ) -- 4.5 5.5
6.0 V
Undervoltage restart of charge pump
see diagram page 13 Tj =-40...+25°C:
Tj =150°C:
Vbb(ucp)
--
--
4.7
-- 6.5
7.0 V
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under) ∆Vbb(under) -- 0.5 -- V
Overvoltage shutdown Vbb(over) 34 -- 43 V
Overvoltage restart Vbb(o rst) 33 -- -- V
Overvoltage hysteresis ∆Vbb(over) -- 1 -- V
Overvoltage protection8) Tj =-40:
Ibb=40 mA Tj =+25...+150°C: Vbb(AZ) 41
43 --
47 --
52 V
Standby current9) Tj =-40°C...25°C:
VIN = 0 T
j =150°C: Ibb(off) --
-- 8
24 30
50 µA
Leakage output current (included in Ibb(off)); VIN = 0 IL(off) -- -- 20 µA
Operating current 10), VIN = 5V,
IGND = IGND1 + IGND2, one channel on:
two channels on:
IGND
--
--
1.2
2.4 3
6mA
Protection Functions11)
Current limit, (see timing diagrams, page 12)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
IL(lim) 48
40
31
56
50
37
65
58
45
A
Repetitive short circuit current limit,
Tj = Tjt each channel
two parallel channels
(see timing diagrams, page 12)
IL(SCr) --
-- 24
24 --
-- A
Initial short circuit shutdown time Tj,start =25°C:
(see timing diagrams on page 12) toff(SC) -- 4.0 -- ms
7) At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT ≈Vbb - 2 V
8) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω
resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram page 9.
9) Measured with load; for the whole device; all channels off
10) Add IST, if IST > 0
11) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
BTS 840 S2
Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max
Infineon technologies 6 2003-Oct-01
Output clamp (inductive load switch off)12)
at VON(CL) = Vbb - VOUT, IL= 40 mA Tj =-40°C:
Tj =25°C...150°C:
VON(CL)
41
43
--
47 --
52 V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis
∆
Tjt -- 10 -- K
Reverse Battery
Reverse battery voltage 13) -Vbb -- -- 32 V
Drain-source diode voltage (Vout > Vbb)
IL = - 4.0 A, Tj = +150°C -VON -- 600 -- mV
Diagnostic Characteristics
Current sense ratio14), static on-condition,
VIS = 0...5 V, Vbb(on) = 6.515)...27V,
kILIS = IL / IIS Tj = -40°C, IL = 5 A:
kILIS
4350
4800 5800
Tj= -40°C, IL= 0.5 A: 3100 4800 7800
Tj= 25...+150°C, IL= 5 A:
Tj= 25...+150°C, IL = 0.5 A: 4350
3800 4800
4800
5350
6300
Current sense output voltage limitation
Tj = -40 ...+150°C IIS = 0, IL = 5 A:
VIS(lim)
5.4
6.1 6.9 V
Current sense leakage/offset current
Tj = -40 ...+150°C VIN=0, VIS = 0, IL = 0:
IIS(LL)
0
-- 1µA
VIN=5 V, VIS = 0, IL = 0: IIS(LH) 0 -- 15
VIN=5 V, VIS = 0, VOUT = 0 (short circuit) IIS(SH) 16) 0 -- 10
Current sense settling time to IIS static±10% after
positive input slope16), IL = 0 5 A
tson(IS)
--
-- 300 µs
12) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
13) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and
circuit page 9).
14) This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by
a factor of two by matching the value of kILIS for every single device.
In the case of current limitation the sense current IIS is zero and the diagnostic feedback potential VST is
High. See figure 2c, page 12.
15) Valid if Vbb(u rst) was exceeded before.
16) not subject to production test, specified by design
BTS 840 S2
Parameter and Conditions, each of the two channels Symbol Values Unit
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified min typ max
Infineon technologies 7 2003-Oct-01
Current sense settling time to 10% of IIS static after
negative input slope17) , IL = 5 0 A
tsoff(IS)
--
30 100 µs
Current sense rise time (60% to 90%) after change
of load current17) , IL = 2.5 5 A
tslc(IS)
--
10 -- µs
Open load detection voltage18) (off-condition) VOUT(OL) 2 3 4V
Internal output pull down
(pin 16,17,18,19 to 2 resp. 12,13,14,15 to 6), VOUT=5 V
RO
5
15 40 kΩ
Input and Status Feedback19)
Input resistance
(see circuit page 9)
RI 3.0 4.5 7.0 kΩ
Input turn-on threshold voltage VIN(T+) -- -- 3.5 V
Input turn-off threshold voltage VIN(T-) 1.5 -- -- V
Input threshold hysteresis ∆ VIN(T) -- 0.5 -- V
Off state input current VIN = 0.4 V: IIN(off) 1 -- 50 µA
On state input current VIN = 5 V: IIN(on) 20 50 90 µA
Delay time for status with open load
after Input neg. slope (see diagram page 14) td(S T OL3) -- 400 -- µs
Status delay after positive input slope17)
tdon(ST)
--
13 -- µs
Status delay after negative input slope17)
tdoff(ST)
--
1 -- µs
Status output (open drain)
Zener lim it voltage T
j =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+25°C, IST = +1.6 mA:
T
j = +150°C, IST = +1.6 mA:
VST(high)
VST(low) 5.4
--
--
6.1
--
--
6.9
0.4
0.7
V
Status leakage current, VST = 5 V, Tj=25 ... +150°C: IST(high) -- -- 2 µA
17) not subject to production test, specified by design
18) External pull up resistor required for open load detection in off state.
19) If ground resistors RGND are used, add the voltage drop across these resistors.
BTS 840 S2
Infineon technologies 8 2003-Oct-01
Truth Table
Input 1 Output 1 Status 1 Current
Sense 1
Input 2 Output 2 Status 2 Current
Sense 2
level level level IIS
Normal
operation L
H L
H H
L 0
nominal
Current-
limitation L
H L
H H
H 0
0
Short ci rcuit to
GND L
H L
L20) H
H 0
0
Over-
temperature L
H L
L H
H 0
0
Short ci rcuit to
Vbb L
H H
H L21)
L 0
<nominal 22)
Open load L
H L23)
H H (L24))
L 0
0
Undervoltage L
H L
L H
L 0
0
Overvoltage L
H L
L H
L 0
0
Negative output
voltage clamp L L H 0
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 13)
Parallel switching of channel 1 and 2 is possible by connecting the inputs and outputs in parallel. The status
outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor. The current
sense outputs IS1 and IS2 have to be connected with a single pull-down resistor.
Terms
PROFET
V
IS1
ST1
GND1
bb
VST1
VIN1
IST1
IIN1
Vbb
Ibb
IGND1
17,18
2
Leadframe
3
5
IN1
VIS1
IIS1
VOUT1
VON1
IL1
OUT1
4
RGND1
Chip 1
PROFET
V
IS2
ST2
GND2
bb
VST2
VIN2
IST2
IIN2
IGND2
13,14
6
Leadframe
7
9
IN2
VIS2
IIS2
VOUT2
VON2
OUT2
8
IL2
RGND2
Chip 2
Leadframe (Vbb) is connected to pin 1,10,11,20
External RGND optional; two resistors RGND1, RGND2 = 150 Ω or a single resistor RGND = 75 Ω for reverse
battery protection up to the max. operating voltage.
20) The voltage drop over the power transistor is Vbb-VOUT > 3V typ. Under this condition the sense current IIS is
zero
21) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
22) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
23) Power Transistor off, high impedance
24) with external resistor between VBB and OUT
BTS 840 S2
Infineon technologies 9 2003-Oct-01
Input circuit (ESD protection), IN1 or IN2
IN
GND
I
R
ESD-ZD
I
I
I
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
Status output, ST1 or ST2
ST
GND
ESD-
ZD
+5V
RST(ON)
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 Ω
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
Current sense output, IS1 or IS2
IS
GND
IS
R
IS
I
ESD-ZD
IS
V
ESD-Zener diode: 6.1 V typ., max 14 mA;
RIS = 1 kΩ nominal
Inductive and overvoltage output clamp,
OUT1 or OUT2
+Vbb
OUT
VZ
VON
Power GND
VON clamped to VON(CL) = 47 V typ.
Overvoltage and reverse batt. Protection
For each channel
+ Vbb
IN
IS
V
R
GND
GND
R
Signal GND
Logic
PRO FET
VZ2
I
R
VZ1
Load GND
Load
R
OUT
ST
R
+ 5V
ST
IS
R
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 Ω,
RST=15kΩ, RI=4.5kΩ typ., RIS=1kΩ, RV=15kΩ,
In case of reverse battery the current has to be limited
by the load. Temperature protection is not active
Open-load detection OUT1 or OUT2
OFF-state diagnostic condition:
VOUT > 3 V typ.; IN low
Logic
ST
Out VOUT
Signal GND
REXT
RO
OFF
Vbb
BTS 840 S2
Infineon technologies 10 2003-Oct-01
GND disconnect, each channel
PROFET
V
IN
ST
OUT
GND
bb
Vbb VIN VST V
GND
Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+).
Due to VGND > 0, no VST = low signal available.
GND disconnect with GND pull up
each channel
PROFET
V
IN
ST
OUT
GND
bb
Vbb VGND
VIN VST
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND > 0, no VST = low signal available.
Vbb disconnect with energized inductive
load, each channel
PROFET
V
IN
ST
OUT
GND
bb
Vbb
high
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 10) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Inductive load switch-off energy
dissipation, each channel
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
RL
L
{
L
Z
Energy stored in load inductance:
EL = 1/2·L·I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= IL· L
2·RL(Vbb + |VOUT(CL)|) ln (1+ IL·RL
|VOUT(CL)| )
Maximum allowable load inductance for
a single switch off (one channel)4)
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
ZL [mH]
0.1
1
10
100
4 6 8101214 1618 202224
I
L [A]
BTS 840 S2
Infineon technologies 11 2003-Oct-01
Figure 1a: Switching a resistive load,
change of load current in on-condition:
IN
ST
OUT
L
t
V
I
IIS
tson(IS)
tt
slc(IS)slc(IS)
Load 1 Load 2
soff(IS)
t
tdon(ST) tdoff(ST)
tt
on off
The sense s i gnal i s not valid during s ettling time after turn or
change of load current.
Figure 1b: Vbb turn on:
IN2
V
OUT1
t
V
bb
ST1 open drain
IN1
VOUT2
ST2 open drain
proper turn on under all conditions
Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition:
IN
t
VOUT
IL
t
t
on
off
90%
dV/dton
dV/dtoff
10%
Figure 2b: Switching a lamp:
IN
ST
OUT
L
t
V
I
The initial peak current should be li m i ted by the lamp and not by
the current l i mit of the devi ce.
Timing diagrams
Both channels are symmetric and consequently the diagrams are valid for channel 1 and
channel 2
BTS 840 S2
Infineon technologies 12 2003-Oct-01
Figure 2c: Switching a lamp with current limit:
IN
ST
OUT
L
t
V
I
IIS
Figure 2d: Switching an inductive load
IN
ST
L
t
V
I
OUT
IL(OL)
*) if the t i m e constant of load i s too large, open-load-status may
occur
Figure 3a: Turn on into short circuit:
shut down by overtemperature, restart by cooling
other channel: normal operation
I
t
ST 1
IN1
L1
L(SCr)
I
IL(lim)
toff(SC)
IS 1 = 0
Heating up of the chip may require several milliseconds, depending
on external conditions
Figure 3b: Turn on into short circuit:
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
t
S 1= IS 2 = 0
IN1/2
L1 L2
L(SCr)
I
2xIL(lim)
I + I
toff(SC)
S
T 1/2
ST1 and ST2 have to be configured as a ' Wired OR' function
ST1/2 with a single pull-up res i stor.
BTS 840 S2
Infineon technologies 13 2003-Oct-01
Figure 4a: Overtemperature:
Reset if Tj <Tjt
ST
J
t
T
IN
IL
IIS
Figure 5a: Open load: detection (with REXT),
turn on/off to open load
IN
ST
OUT
t
V
I
open load
L
IIS
d(ST OL3)
t
Figure 6a: Undervoltage:
IN
V
t
bb
ST
VV
bb(under) bb(u cp)
V
IL
IIS
bb(u rst)
not defined
Figure 6b: Undervoltage restart of charge pump
bb(under)
V
Vbb(u rst)
Vbb(over)
Vbb(o rst)
Vbb(u cp)
off-
state
on-state
V
ON(CL)
Vbb
Von
off-
state
charge pump starts at Vbb(ucp) =4.7 V typ.
BTS 840 S2
Infineon technologies 14 2003-Oct-01
Figure 7a: Overvoltage:
IN
V
t
bb
ST
ON(CL)
VVbb(over) Vbb(o rst)
IL
IIS
Figure 8a: Current sense versus load current25::
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0123456
IL
[A]
[mA] IIS
25 This range for the current sense ratio refers to all
devices. The accuracy of the kILIS can be raised at
least by a factor of two by matching the value of
kILIS for every single device.
Figure 8b: Current sense ratio:
0
5000
10000
15000
012345678910111213
IL
[A]
kILIS
Figure 9a: Output voltage drop versus load current:
0.0
0.1
0.2
012345678
IL
[A]
[V] V
ON
ON(NL)
V
ON
R
BTS 840 S2
Infineon technologies 15 2003-Oct-01
Package and Ordering Code
Standard: P-DSO-20-12 (Power SO 20)
Sales Code BTS 840
Ordering Code Q67060-S7013
All dimensions in millime tres
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given t o describe certain components and
shall not be considered as a guarantee of characterist i cs.
Terms of del i very and rights t o t echnical change res erved.
We hereby disclaim any and all warrant ies, includi ng but not limited
to warranties of non-infringement , regardi ng circuits , descriptions
and charts stated herein.
Infineon Technologies is an approv ed CECC manufacturer.
Information
For further inf orm ation on technology, del ivery terms and conditions
and prices pl ease contact your nearest Infineon Technologies Offi ce
in Germany or our I nf ineon Technologies Representatives worldwi de
(see address l i st).
Warnings
Due to techni cal requirements components may contain dangerous
substances. For information on the types i n question please cont act
your nearest Infineon Technologies Of fice.
Infineon Tec hnol ogi es Components may onl y be used in life-s upport
devices or systems with the express written approval of I nfineon
Technologies , if a failure of such components can reasonably be
expected to cause the fai l ure of that life-support device or system, or
to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in t he
human body, or t o support and/or maintai n and sustain and/or
protect hum an l ife. If they fail, it i s reasonable to ass ume that the
health of t he user or other persons may be endangered.
