5SDF10H6004 - Abb Switzerland Ltd. Semiconductors

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

VRRM =

6000

V

IF(AV)M =

1100

A

IFSM =

18×103

A

V(T0) =

1.5

V

rT =

0.6

mΩ

V

DC-link

=

3800

V

Fast Recovery Diode

5SDF 10H6004

Doc. No. 5SYA1109-03 Jan. 10

• Patented free-floating silicon technology

• Low on-state and switching losses

• Optimized for use as freewheeling diode in high-

voltage GTO converters

• Industry standard housing

• Cosmic radiation withstand rating

Blocking

Maximum rated values 1)

Parameter Symbol Conditions Value Unit

Repetitive peak reverse voltage VRRM f = 50 Hz, tp = 10ms, Tvj = 125°C 6000 V

Permanent DC voltage for 100 FIT

failure rate VDC-link Ambient cosmic radiation at sea level in open

air. (100% Duty) 3800 V

Characteristic values

Parameter Symbol Conditions min typ max Unit

Repetitive peak reverse current IRRM VR = VRRM, Tvj = 125°C 50 mA

Mechanical data

Maximum rated values 1)

Parameter Symbol Conditions min typ max Unit

Mounting force Fm 36 40 44 kN

Acceleration a Device unclamped 50 m/s2

Acceleration a Device clamped 200 m/s2

Characteristic values

Parameter Symbol Conditions min typ max Unit

Weight m 0.83 kg

Housing thickness H 26.2 26.6 mm

Surface creepage distance DS 30 mm

Air strike distance Da 20 mm

Note 1 Maximum rated values indicate limits beyond which damage to the device may occur

5SDF 10H6004

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1109-03 Jan. 10 page 2 of 6

On-state

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Max. average on-state

current IF(AV)M Half sine wave, TC = 85 °C

1100

A

Max. RMS on-state current I

F(RMS)

1700

A

Max. peak non-repetitive

surge current IFSM

18×103

A

Limiting load integral I2t

tp = 10 ms, Tvj = 125°C, VR = 0 V

1.62×106

A2s

Max. peak non-repetitive

surge current IFSM

44×103

A

Limiting load integral I2t

tp = 1 ms, Tvj = 125°C, VR = 0 V

968×103

A2s

Characteristic values

Parameter Symbol

Conditions min typ max Unit

On-state voltage VF IF = 2500 A, Tvj = 125°C 3 V

Threshold voltage V(T0) 1.5 V

Slope resistance rT Tvj = 125°C

IF = 200...6000 A 0.6 mΩ

Turn-on

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Peak forward recovery

voltage VFRM dIF/dt = 500 A/µs, Tvj = 125°C

150 V

Turn-off

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Reverse recovery current IRM

1000 A

Reverse recovery charge Qrr

6000 µC

Turn-off energy Err

di/dt = 300 A/µs, IFQ = 1000 A,

Tj = 125°C, VRM = 2900 V,

CS = 3 µF (GTO snubber circuit)

5 J

5SDF 10H6004

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1109-03 Jan. 10 page 3 of 6

Thermal

Maximum rated values 1)

Parameter Symbol

Conditions min typ max Unit

Operating junction

temperature range Tvj -40 125 °C

Storage temperature range T

stg -40 125 °C

Characteristic values

Parameter Symbol

Conditions min typ max Unit

Thermal resistance junction

to case Rth(j-c) Double-side cooled

Fm = 36...44 kN 12 K/kW

Rth(j-c)A Anode-side cooled

Fm = 36...44 kN 24 K/kW

Rth(j-c)C Cathode-side cooled

Fm = 36...44 kN 24 K/kW

Thermal resistance case to

heatsink Rth(c-h) Double-side cooled

Fm = 36...44 kN 3 K/kW

Rth(c-h) Single-side cooled

Fm = 36...44 kN 6 K/kW

Analytical function for transient thermal

impedance:

)e-(1R = (t)Z n

1i

t/-

ith c)-th(j ∑

=

i

τ

i 1 2 3 4

Rth i(K/kW)

7.440 2.000 1.840 0.710

τi(s) 0.4700 0.0910 0.0100 0.0047

Fig. 1 Transient thermal impedance junction-to-case

5SDF 10H6004

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1109-03 Jan. 10 page 4 of 6

Fig. 2 Max. on-state voltage characteristics

Fig. 3 Surge on-state current vs. pulse length. Half-

sine wave

Fig. 4 Forward recovery vs. turn on di/dt (max.

values)

5SDF 10H6004

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1109-03 Jan. 10 page 5 of 6

VFR

dIF/dt

IF (t)

VF (t)

tfr

tfr (typ) 10 µs

VF(t), IF (t)

t

VRM

VR (t)

IF (t)

IRM

-dIF/dt

QRR

IR (t)

VF (t)

Fig. 5 General current and voltage waveforms

Li

LLoad

DUT

VDC-link

IF

RS

DS

CS

Fig. 6 Test circuit.

5SDF 10H6004

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1109-03 Jan. 10

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet www.abb.com/semiconductors

Fig. 7 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise