VSMB2948RG, VSMB2948G
www.vishay.com Vishay Semiconductors
Rev. 1.0, 17-May-13 1Document Number: 84201
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
DESCRIPTION
VSMB2948 series are infrared, 940 nm emitting diodes in
GaAlAs multi quantum well (MQW) technology with high
radiant power and high speed, molded in clear, untinted
plastic packages (with lens) for surface mounting (SMD).
APPLICATIONS
• IR touch panels
• Remote control
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• Peak wavelength: p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD2xx3X01 and
VEMT2xx3X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
VSMB2948RG VSMB2948G
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns)
VSMB2948RG 20 ± 25 940 15
VSMB2948G 20 ± 25 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMB2948RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VSMB2948G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Surge forward current tp = 100 μs IFSM 500 mA
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature according figure 9, J-STD-020 Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W
VSMB2948RG, VSMB2948G
www.vishay.com Vishay Semiconductors
Rev. 1.0, 17-May-13 2Document Number: 84201
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21343 Tamb - Ambient Temperature (°C)
PV - Power Dissipation (mW)
RthJA = 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21344
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.15 1.35 1.6 V
IF = 500 mA, tp = 100 μs VF1.8 V
Temperature coefficient of VFIF = 1 mA TKVF - 1.5 mV/K
Reverse current VR = 5 V IR10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ21 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie10 20 30 mW/sr
IF = 500 mA, tp = 100 μs Ie90 mW/sr
Radiant power IF = 100 mA, tp = 20 ms e40 mW
Temperature coefficient of radiant power IF = 1 mA TKe- 1.1 %/K
Angle of half intensity ± 25 deg
Peak wavelength IF = 30 mA p920 940 960 nm
Spectral bandwidth IF = 30 mA 25 nm
Temperature coefficient of pIF = 30 mA TKp0.25 nm/K
Rise time IF = 100 mA, 20 % to 80 % tr15 ns
Fall time IF = 100 mA, 20 % to 80 % tf15 ns
Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc23 MHz
VSMB2948RG, VSMB2948G
www.vishay.com Vishay Semiconductors
Rev. 1.0, 17-May-13 3Document Number: 84201
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
0.001
0.01
0.1
1
0.5 0.9 1.3 1.9
tp = 100 µs
VF - Forward Voltage (V)
IF - Forward Current (A)
0.7 1.1 1.5 1.7
90
92
94
96
98
100
102
104
106
108
110
- 40 - 20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
VF, rel - Relative Forward Voltage (%)
I
F
= 100 mA
I
F
= 10 mA
I
F
= 1 mA
21443
t
p
= 20 ms
I
F
- Forward Current (A)
I
e
- Radiant Intensity (mW/sr)
0.001 0.01 0.1 1
0.1
1
10
100
1000
t
p
= 100 µs
40
60
80
100
120
140
160
180
- 60 - 40 - 20 0 20 40 60 80 100
Tamb - Ambient Temperature (°C)
Ie rel - Relative Radiant Intensity (%)
tp = 20 ms
IF = 1 mA
21444
IF = 100 mA
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
I
F
= 30 mA
22690
Ie rel - Relative Radiant Intensity
ϕ - Angular Displacement
0.4 0.2 00.6
0° 10° 20°
0.9
0.8
30°
40°
50°
60°
70°
80°
0.7
1.0
VSMB2948RG, VSMB2948G
www.vishay.com Vishay Semiconductors
Rev. 1.0, 17-May-13 4Document Number: 84201
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters: VSMB2948RG
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
VSMB2948RG, VSMB2948G
www.vishay.com Vishay Semiconductors
Rev. 1.0, 17-May-13 5Document Number: 84201
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VSMB2948G
VSMB2948RG, VSMB2948G
www.vishay.com Vishay Semiconductors
Rev. 1.0, 17-May-13 6Document Number: 84201
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMB2848RG
VSMB2948RG, VSMB2948G
www.vishay.com Vishay Semiconductors
Rev. 1.0, 17-May-13 7Document Number: 84201
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMB2848G
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
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