Jan. 2000
PIN CONFIGURATION
DESCRIPTION
M54517P is seven-circuit Darlington transistor arrays. The
circuits are made of NPN transistors. Both the semiconduc-
tor integrated circuits perform high-current driving with ex-
tremely low input-current supply.
FEATURES
●Medium breakdown voltage (BVCEO ≥ 25V)
●High-current driving (Ic(max) = 400mA)
●Driving available with PMOS IC output
●Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54517P has seven circuits consisting of NPN
Darlington transistors. These ICs have resistance of 20k Ω
between input transistor bases and input pins. The output
transistor emitters are all connected to the GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter sup-
ply voltage is 25V maximum.
CIRCUIT DIAGRAM
V
mA
V
W
°C
°C
–0.5 ~ +25
400
–0.5 ~ +25
1.47
–20 ~ +75
–55 ~ +125
RatingsSymbol Parameter Conditions Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
VCEO
IC
VI
Pd
Topr
Tstg
20K
2K
20K
INPUT
OUTPUT
GND
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
The seven circuits share the GND.
1IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
NC
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
NC : No connection
INPUT OUTPUT
Package type 16P4
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54517P
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
Jan. 2000
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
V
(BR) CEO
II
hFE
V
V
Parameter
—
—
—
—
0
8
5
0
25
0.5
Limits
min typ max
Symbol Unit
0
0
—
—
400
200
20
mA
V
V
mA
—
25
—
—
0.3
1000
—
1.15
0.95
0.8
4500
—
2.2
1.4
1.8
—
Symbol UnitParameter Test conditions Limits
min typ* max
V
* : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
ns
ns
—
—50
500 —
—
Symbol UnitParameter Test conditions Limits
min typ max
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
PG
50ΩC
L
R
L
Measured device
V
O
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
P
= 8V
P-P
(2) Input-output conditions : R
L
= 25Ω, V
O
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
VO
VIL
Output voltage
“H” input voltage
“L” input voltage
IC
VIH
Duty Cycle
no more than 8%
IC≤400mA
IC≤200mA
Duty Cycle
no more than 40%
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
Collector-emitter breakdown voltage
Input current
DC amplification factor
ICEO = 100µA
VI = 8V, IC = 400mA
VI = 5V, IC = 200mA
VI = 17V
VCE = 4V, IC = 400mA, Ta = 25°C
VCE (sat)
Collector-emitter saturation voltage
Turn-on time
Turn-off time
ton
toff CL = 15pF (note 1)
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54517P
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
Jan. 2000
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
Power dissipation Pd (W)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE
(sat) (V)
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
Duty cycle (%)
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
Duty cycle (%)
Collector current Ic (mA)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
V
I
= 5V
Ta = –20°C
Ta = 25°C
Ta = 75°C
0.5 1.0 1.5 2.0
0
100
200
300
400
0
0
0
100
200
300
400
500
➀
➁
➂
➃
➆
➄
➅
20 40 60 80 100
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
0
100
200
300
400
500
➀
➁
➂
➃
➄
➆➅
20 40 60 80 100
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC amplification factor h
FE
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
V
CE
= 4V
Ta = –20°C
Ta = 25°C
Ta = 75°C
V
CE
= 4V
Ta = –20°C
Ta = 25°C
Ta = 75°C
10
1
10
2
357
10
3
357
10
2
10
3
3
5
7
10
4
3
5
7
1234
0
100
200
300
400
0
Collector current Ic (mA)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54517P
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
Jan. 2000
Input Characteristics
Input voltage V
I
(V)
Input current I
I
(mA)
5 101520
0
0.5
1.0
1.5
2.0
0
Ta = –20°C
Ta = 25°C
Ta = 75°C
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54517P
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
