MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54517P 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54517P is seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES Medium breakdown voltage (BVCEO 25V) High-current driving (Ic(max) = 400mA) Driving available with PMOS IC output Wide operating temperature range (Ta = -20 to +75C) IN1 1 16 O1 IN2 2 15 O2 IN3 3 14 O3 IN4 4 13 O4 OUTPUT IN5 5 12 O5 IN6 6 11 O6 IN7 7 10 O7 GND 8 9 Package type 16P4 NC NC : No connection CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces OUTPUT INPUT 20K 20K 2K GND FUNCTION The M54517P has seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 20k between input transistor bases and input pins. The output transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 25V maximum. ABSOLUTE MAXIMUM RATINGS Symbol Conditions Ratings Unit Current per circuit output, L -0.5 ~ +25 400 V mA Ta = 25C, when mounted on board -0.5 ~ +25 1.47 V W -20 ~ +75 -55 ~ +125 C Collector-emitter voltage Output, H IC VI Collector current Input voltage Pd Topr Power dissipation Operating temperature Storage temperature Unit : (Unless otherwise noted, Ta = -20 ~ +75 C) Parameter VCEO Tstg The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. C Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54517P 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = -20 ~ +75C) Limits Parameter VO Output voltage IC Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) VIH "H" input voltage VIL "L" input voltage min 0 typ -- max 25 Duty Cycle no more than 8% 0 -- 400 Duty Cycle no more than 40% 0 -- 200 IC 400mA IC 200mA 8 -- 5 -- -- Unit V mA 0 ELECTRICAL CHARACTERISTICS 20 V 0.5 V (Unless otherwise noted, Ta = -20 ~ +75C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) Collector-emitter saturation voltage II h FE Limits Test conditions Unit min typ* max ICEO = 100A VI = 8V, I C = 400mA 25 -- -- 1.15 -- 2.2 -- 0.95 1.4 Input current VI = 5V, I C = 200mA VI = 17V 0.3 0.8 1.8 mA DC amplification factor VCE = 4V, IC = 400mA, Ta = 25C 1000 4500 -- -- V V * : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) min -- typ 50 max -- -- 500 -- Unit ns ns TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits Test conditions VO Measured device 50% 50% INPUT RL OUTPUT PG OUTPUT 50 CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 8VP-P (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54517P 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 400 Collector current Ic (mA) Power dissipation Pd (W) 2.0 1.5 1.0 0.5 0 25 0 50 75 300 200 VI = 5V 100 0 100 Ta = 75C Ta = 25C Ta = -20C 0 Duty-Cycle-Collector Characteristics 2.0 500 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 1.5 Duty-Cycle-Collector Characteristics 500 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 100 0 20 40 60 80 100 Duty cycle (%) DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 400 VCE = 4V Ta = 75C Ta = 25C Ta = -20C 3 103 7 5 3 102 1 10 300 Duty cycle (%) Collector current Ic (mA) 7 5 400 0 100 104 DC amplification factor hFE 1.0 Output saturation voltage VCE (sat) (V) Ambient temperature Ta (C) 0 0.5 3 5 7 102 3 Collector current Ic (mA) 5 7 103 VCE = 4V 300 Ta = 75C Ta = 25C Ta = -20C 200 100 0 0 1 2 3 4 Input voltage VI (V) Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54517P 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY Input Characteristics Input current II (mA) 2.0 Ta = 75C Ta = 25C Ta = -20C 1.5 1.0 0.5 0 0 5 10 15 20 Input voltage VI (V) Jan. 2000