1
Low-voltage operation photo IC
Operation at low voltage from 2.2 V
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S5767-100 S5768-100
The S5767-100 and S5768-100 are digital output photo ICs consisting of a photodiode, an amplifi er, a schmitt trigger circuit and
an output transistor, all integrated in a single chip and molded into a clear plastic package.
Absolute maximum ratings (Ta=25 °C)
Electrical and optical characteristics (Ta=25 °C, Vcc=5 V, light source: λp=890 nm LED, unless otherwise noted)
Parameter Symbol Value Unit
Supply voltage Vcc -0.5 to +7 V
Output voltage Vo -0.5 to +7 V
Low level output current Io 8 mA
Power dissipation P 250 mW
Operating temperature Topr -25 to +85 °C
Storage temperature Tstg -40 to +100 °C
Soldering - 260 °C, 3 s, at least 2.5 mm away from package bottom surface -
Parameter Symbol Condition S5767-100 S5768-100 Unit
Min. Typ. Max. Min. Typ. Max.
Supply voltage Vcc 2.2 - 7 2.2 - 7 V
Low level output voltage VOL IOL=4 mA *
1
- 0.1 0.4 - 0.1 0.4 V
High level output voltage VOH *
2
4.9 - - 4.9 - - V
Low level current consumption ICCL *
1
- 1.5 3 - 1.5 3 mA
High level current consumption ICCH *
2
- 1.2 3 - 1.2 3 mA
L→H Threshold illuminance ELH λ=660 nm - 0.1 0.3 - - - μW/mm
2
H→L Threshold illuminance EHL - - - - 0.1 0.3 μW/mm
2
Hysterisis - *
3
- 0.85 - - 0.85 - -
L→H Propagation delay time tPLH E0=0 μW/mm
2
E1=0.4 μW/mm2
RL=1.2 kΩ
CL=10 pF
- 1 5 - 1.5 8 μs
H→L Propagation delay time tPHL - 1.5 8 - 1 5 μs
Peak sensitivity wavelength λp- 820 - - 820 - nm
Rise time tr E0=0 μW/mm
2
E1=0.4 μW/mm2
RL=1.2 kΩ
CL=10 pF
- 0.07 - - 0.07 - μs
Fall time tf - 0.03 - - 0.03 - μs
*1: S5767-100: E (illuminance) =0 μW/mm
2
, S5768-100: E=0.4 μW/mm
2
*2: S5767-100: E=0.4 μW/mm
2
, S5768-100: E=0 μW/mm
2
*3: S5767-100: EHL/ELH, S5768-100: ELH/EHL
Features Applications
Low-speed optical linksLow-voltage operation: 2.2 to 7 V
Rotary encodersClear plastic package with lens
Low current consumption
Transistor output with built-in pull-up resistor
S5767-100: “H” level output at light input
S5768-100: “L” level output at light input
2
Low-voltage operation photo IC S5767-100, S5768-100
Spectral response Power dissipation vs. ambient temperature
(Typ. Ta=25 °C)
1200200 400 600 800 1000
0
Wavelength (nm)
Relative sensitivity (%)
20
40
60
80
100
Power dissipation (mW)
Ambient temperature (°C)
300 (Typ.)
200
100
0
-25 0 25 50 75 100
KPICB0027EB KPICB0024EA
IF
PULSE INPUT
5 V
Vo
GND
RL
0.01 µF
IF
tPHL
tf tr
VOL
10 %
1.5 V
90 %
VOH
50 %
tPLH
Response time measurement circuit
S5767-100
S5768-100
Threshold illuminance vs. ambient temperature
THRESHOLD ILLUMINANCE (RELATIVE VALUE)
AMBIENT TEMPERATURE (°C)
1.5
1
0.5
0
-50 -25 0 25 50 75 100
(Typ. Vcc=5 V, normalized at Ta=25 °C, S5767-100: L→H, S5768-100: H→L)
S5767-100(X): L→H
S5768-100(X): H→L
S5767-100(X): H→L
S5768-100(X): L→H
KPICB0029EB
KPICC0137EA
KPICC0138EA
IF
PULSE INPUT
5 V
Vo
GND
RL
0.01 µF
IF
tPLH
Vo
tr tf
VOL
10 %
1.5 V
90 %
VOH
50 %
tPHL
3
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KPIC1037E04 Sep. 2008 DN
Low-voltage operation photo IC S5767-100, S5768-100
Dimensional outline (unit: mm)
4.3 ± 0.3
(INCLUDING BURR)
4.15
3.0
2.4
R 0.9
0.45
0.6
10°
5°
10° 5°
2.5 MAX.
0.45
2.54 ± 0.5
(SPECIFIED AT THE LEAD ROOT)
Tolerance unless otherwise noted: ±0.2, ±2°
Shaded area indicates burr.
Values in parentheses are not
guaranteed, but for reference.
Lead surface finish: Silver plating
Packing: Polyethylene pack [anti-static type]
(200 pcs/pack)
0.6 ± 0.3
(0.8) (1.2)
1.43
1.9 Max.
4.43
15 MIN.
1.42.54Gate burr
1.7
(INCLUDING BURR)
4.6 +0.6
-0.3
(1.27)
GND
VO
Vcc
KPICA0024EB
