MB85R1001 - Fujitsu - Product.Network

DS05-13103-2E

FUJITSU SEMICONDUCTOR

DATA SHEET

Memory FRAM

CMOS

1 M Bit (128 K × 8)

MB85R1001

■DESCRIPTIONS

The MB85R1001 is an FRAM (Ferroelectr ic Random Access Memory) chip in a configuration of 131,072 words

x 8 bits, using the ferroelectric process and silicon gat e CMOS process technologies for fo rming the nonvolatile

memory cells.

Unlike SRAM, MB85R1001 is able to retain data without back-up battery.

The memor y cells used fo r the MB85R1001 has improved at least 1010 times of read/wr ite access, significantly

outperforming FLASH memory and E2PROM in endurance.

The MB85R1001 used a pseudo - SRAM interface compatible with conventional asynchronous SRAM.

■FEATURES

• Bit configuration : 131,072 words x 8bits

• Read/write endurance : 1010 times

• Operating power supply voltage : 3.0 V to 3.6 V

• Operating temperature range : -20 °C to +85 °C

• 48-pin, TSOP (1) plastic package

■PACKAGE

48-pin plastic TSOP(1)

(FPT-48P-M25)

MB85R1001

■PIN ASSIGNMENTS

■PIN DESCRIPTIONS

Pin name Function

A0 to A16 Address In

I/O1 to I/O8 Data Input/Output

CE1 Chip Enable 1 in

CE2 Chip Enable 2 in

WE Write Enable in

OE Output Enable in

VCC Power Supply

GND Ground

A11

N.C.

A13

CE2

A15

N.C.

VCC

N.C.

GND

N.C.

VCC

N.C.

A16

A14

A12

N.C.

GND

A10

CE1

N.C.

I/O8

I/O7

I/O6

I/O5

I/O4

VCC

N.C.

I/O3

I/O2

I/O1

N.C.

GND

(FPT-48P-M25)

(TOP VIEW)

MB85R1001

■BLOCK DIAGRAM

■FUNCTION TRUTH TABLE

L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance

: Latch address at falling edge, : Latch address at rising edge

Operation Mode CE1CE2WE OE I/O1 to I/O8Supply Current

Standby Pre-charge

HXXX

High-Z Standby

(ISB)

XLXX

XXHH

Read LHHL Dout

Operation

(ICC)

Read

(Pseudo SRAM, OE control) LHH

Write L

HLH Din

Write

(Pseudo SRAM, WE control) LH H

Output Disable L H H H High-Z

A16

Address Latch.

Row Dec. Ferro Capacitor Cell

Column Dec.

S/A

I/O1 to I/O8

I/O8

I/O1

intCEB

intCE2

intWE

intOE

intCE2

intCEB

CE2

intCE2

CE1

MB85R1001

■ABSOLUTE MAXIMUM RATINGS

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

■RECOMMENDED OPERATING CONDITIONS (VCC = 3.0 V to 3.6 V, TA = −20 °C to +85 °C)

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the

semiconductor device. All of the device’s electrical characteristics are warranted when the device is

operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges. Operation

outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented on

the data sheet. Users considering application outside the listed conditions are advised to contact their

FUJITSU representatives beforehand.

Parameter Symbol Rating Unit

Min Max

Supply Voltage VCC −0.5 +4.0 V

Input Voltage VIN −0.5 VCC+0.5 V

Output Voltage VOUT −0.5 VCC+0.5 V

Ambient Temperature TA−20 +85 °C

Storage Temperature Tstg −40 +125 °C

Parameter Symbol Value Unit

Min Typ Max

Supply Voltage VCC 3.0 3.3 3.6 V

Input Voltage (high) VIH VCC x 0.8 ⎯VCC + 0.5 V

Input Voltage (low) VIL −0.5 ⎯0.8 V

Operating Temperature TA−20 ⎯+85 °C

MB85R1001

■ELECTRICAL CHARACTERISTICS

1. DC CHARACTERISTICS (VCC = 3.0 V to 3.6 V, TA = −20 °C to +85 °C)

*1 : Iout : Output current

*2 : All other inputs (CE1, CE2, OE, WE) should be at CMOS levels, i.e., H ≥ VCC − 0.2 V, L ≤ 0.2 V.

Parameter Symbol Test Condition Value Unit

Min Typ Max

Input Leakage Current |ILI|VIN = 0 V to VCC ⎯⎯10 µA

Output Leakage Current |ILO|VOUT = 0 V to VCC,

CE1 = VIH or OE = VIH ⎯⎯10 µA

Supply Current ICC CE1 = 0.2 V, CE2 = VCC−0.2 V,

Iout = 0 mA*1⎯⎯10 mA

Standby Current ISB

CE1 ≥ VCC−0.2 V

⎯10 100 µACE2 ≤ 0.2 V*2

OE ≥ VCC−0.2 V, WE ≥ VCC−0.2 V*2

Output Voltage (high) VOH IOH = −2.0 mA 0.8 x VCC ⎯⎯V

Output Voltage (low) VOL IOL = 2.0 mA ⎯⎯0.4 V

MB85R1001

2. AC CHARACTERISTICS

• AC TEST CONDITIONS

Supply Voltage : 3.0 V to 3.6 V

Operating Temperature : −20 °C to +85 °C

Input Voltage Amplitude : 0.3 V to 2.7 V

Input Rising Time : 10 ns

Input Falling Time : 10 ns

Input Evaluation Level : 2.0 V / 0.8 V

Output Evaluation Level : 2.0 V / 0.8 V

Output Impedance : 50 pF

(1) Read Operation (VCC = 3.0 V to 3.6 V, TA = −20 °C to +85 °C)

(2) Write Operation (VCC = 3.0 V to 3.6 V, TA = −20 °C to +85 °C)

Parameter Symbol Value Unit

Min Max

Read Cycle Time tRC 250 ⎯ns

CE1 Active Time tCA1 210 2,000 ns

OE Active Time tRP 210 2,000 ns

Pre-charge Time tPC 40 ⎯ns

Address Setup Time tAS 10 ⎯ns

Address Hold Time tAH 50 ⎯ns

OE Setup Time tES 10 ⎯ns

CE1 Access Time tCE1 ⎯100 ns

CE2 Access Time tCE2 ⎯100 ns

OE Access Time tOE ⎯100 ns

OE Output Floating Time tOHZ ⎯25 ns

Parameter Symbol Value Unit

Min Max

Write Cycle Time tWC 250 ⎯ns

CE1 Active Time tCA1 210 2,000 ns

CE2 Active Time tCA2 210 2,000 ns

Pre-charge Time tPC 40 ⎯ns

Address Setup Time tAS 10 ⎯ns

Address Hold Time tAH 50 ⎯ns

Write Pulse Width tWP 210 ⎯ns

Data Setup Time t DS 10 ⎯ns

Data Hold Time tDH 50 ⎯ns

Write Setup Time tWS 0⎯ns

MB85R1001

(3) Power ON/OFF Sequence

* : Condition for power detection circuit to function

3. Pin Capacitance (f = 1 MHz, TA = +25 °C)

4. Reliability

Data retention 10 years (TA = 0 °C to +55 °C)

Access endurance 1010 times (TA = −20 °C to +85 °C)

Parameter Sym-

bol Value Units

Min Typ Max

CE1 LEVEL holding time in Power OFF tpd 85 ⎯⎯ns

CE1 LEVEL holding time in Power ON tpu 85 ⎯⎯ns

Power interval * tpi 0.5 ⎯⎯s

Parameter Symbol Test Condition Value Unit

Min Typ Max

Input Capacitance CIN VIN = GND ⎯⎯10 pF

Output Capacitance COUT VOUT = GND ⎯⎯10 pF

MB85R1001

■TIMING DIAGRAMS

1. Read Cycle Timing

•CE1, CE2 Control

•OE

Control

CE1

A0 to A16

I/O1 to I/O8

CE2

tRC

tCA1

tCE1

tPC

tCE2

tAS tAH

tES

Valid

tRP

tOE tOHZ High-Z

Valid

CE1

A0 to A16

I/O1 to I/O8

CE2

tAHtAS

Valid

High-Z

Valid

tCA1

tCA2

tRC

tPC

tRP

tOE tOHZ

MB85R1001

2. Write Cycle Timing

•CE1, CE2 Control

•WE

Control

tDH

CE1

A0 to A16

Data In

CE2

Valid

tAH

tAS

Valid

tWS tWP

tCA2

tCA1

tWC

tPC

tDS

CE1

A0 to A16

Data In

CE2

tDS

Valid

tAHtAS

Valid

tWC

tCA1

tCA2

tPC

tWP

tDH

MB85R1001

■POWER ON/OFF SEQUENCE

■NOTES ON USE

After IR reflow, the hold of data that was written before IR reflow is not guaranteed.

■ORDERING INFOMATION

Part number Package Remarks

MB85R1001PFTN 48-pin plastic TSOP(1)

(FPT-48P-M25)

CE1 > VCC × 0.8*CE1 : Don't Care CE1 > VCC × 0.8*

tpi tputpd

VCC

CE2

3.0 V

1.0 V

VIH (Min)

VIL (Max)

GND

CE1 CE1

VCC

CE2

3.0 V

1.0 V

VIH (Min)

VIL (Max)

GND

* : CE1 (Max) < VCC + 0.5 V

CE2 ≤ 0.2 V

MB85R1001

■PACKAGE DIMENTION

48-pin plastic TSOP(1)

(FPT-48P-M25)

Note 1) *1 : Resin protrusion. (Each side : +0.15 (.006) Max).

Note 2) *2 : These dimensions do not include resin protrusion.

Note 3) Pins width and pins thickness include plating thickness.

Note 4) Pins width do not include tie bar cutting remainder.

Dimensions in mm (inches).

Note: The values in parentheses are reference values.

2003 FUJITSU LIMITED F48043S-c-2-2

1 48

LEAD No.

12.40±0.10(.488±.004)

14.00±0.20(.551±.008)

0.08(.003) .006

–.001

+.002

–0.03

+0.05

0.145

"A"

INDEX

12.00±0.10

(.472±.004)

1.13±0.07

0.10±0.05

0.50(.020)

.009

–.002

+.002

–0.04

+0.05

0.22

0.10(.004)

0.25(.010) 0.60±0.15

(.024±.006

)

0˚~8˚

Details of "A" part

(.044±.003) (Mounting height)

(Stand off)

(.004±.002)

MB85R1001

FUJITSU LIMITED

The contents of this document are subject to change without notice.

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representatives before ordering.

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circuit examples, in this document are presented solely for the

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F0501