IKW15N120T2
TrenchStop® 2nd generation Series
Power Semiconductors 8 Rev. 2.1 Sep 08
E, SWITCHING ENERGY LOSSES
7.5A 15.0A 22.5A
0.0mJ
2.5mJ
5.0mJ
7.5mJ
Ets*
Eoff
*) Eon and Etsinclude losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
10Ω 30Ω 50Ω 70Ω 90Ω 110Ω
0.00 mJ
1.25 mJ
2.50 mJ
3.75 mJ
5.00 mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=41.8Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
0°C 50°C 100°C 150°C
.0mJ
.2mJ
.4mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
E, SWITCHING ENERGY LOSSES
400V 500V 600V 700V
0.00mJ
1.25mJ
2.50mJ
3.75mJ
5.00mJ Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=41.8Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=175°C,
VGE=0/15V, IC=15A, RG=41.8Ω,
Dynamic test circuit in Figure E)
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