Vishay Siliconix
Si1012CR
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET: 1.2 V Rated
•100 % R
g Tes t e d
• Gate-Source ESD Protected: 1000 V
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load/Power Switching for Portable Devices
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
PRODUCT SUMMARY
VDS (V) RDS(on) ()I
D (mA) Qg (Typ.)
20
0.396 at VGS = 4.5 V 600
0.75
0.456 at VGS = 2.5 V 500
0.546 at VGS = 1.8 V 350
1.100 at VGS = 1.5 V 50
Ordering Information:
Si1012CR-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
2
1
S
D
G
3
SC-75A
Marking Code: K
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ± 8
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID0.63a, b
A
TA = 70 °C 0.5a, b
Pulsed Drain Current (t = 300 µs) IDM 2
Continuous Source-Drain Diode Current TA = 25 °C IS0.2a, b A
Maximum Power Dissipationa
TA = 25 °C PD0.24a, b
W
TA = 70 °C 0.15a, b
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientbt 5 s RthJA
440 530 °C/W
Steady State 540 650
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Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
Vishay Siliconix
Si1012CR
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V
VDS Temperature Coefficient VDS/TJID = 250 µA 17 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ- 1.8
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1 V
Gate-Source Leakage IGSS
VDS = 0 V, VGS = ± 8 V ± 30
µA
VDS = 0 V, VGS = ± 4.5 V ± 1
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V 1
VDS = 20 V, VGS = 0 V, TJ = 85 °C 10
On-State Drain CurrentaID(on) VDS = 5 V, VGS = 4.5 V 2 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 4.5 V, ID = 0.6 A 0.330 0.396
VGS = 2.5 V, ID = 0.3 A 0.380 0.456
VGS = 1.8 V, ID = 0.3 A 0.420 0.546
VGS = 1.5 V, ID = 0.05 A 0.720 1.100
Forward Transconductance gfs VDS = 10 V, ID = 0.5 A 7.5 S
Dynamicb
Input Capacitance Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
43
pFOutput Capacitance Coss 14
Reverse Transfer Capacitance Crss 8
Total Gate Charge Qg VDS = 10 V, VGS = 8 V, ID = 0.6 A 1.3 2
nC
VDS = 10 V, VGS = 4.5 V, ID = 0.6 A
0.75 1.2
Gate-Source Charge Qgs 0.15
Gate-Drain Charge Qgd 0.13
Gate Resistance Rgf = 1 MHz 2.4 12.2 24.4
Tur n - O n De lay T i m e td(on)
VDD = 10 V, RL = 20
ID 0.5 A, VGEN = 4.5 V, Rg = 1
11 20
ns
Rise Time tr16 24
Turn-Off Delay Time td(off) 26 39
Fall Time tf11 20
Drain-Source Body Diode Characteristics
Pulse Diode Forward CurrentaISM 2A
Body Diode Voltage VSD IS = 0.5 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr
IF = 0.5 A, dI/dt = 100 A/µs
10 15 ns
Body Diode Reverse Recovery Charge Qrr 24nC
Reverse Recovery Fall Time ta5ns
Reverse Recovery Rise Time tb5
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
www.vishay.com
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Vishay Siliconix
Si1012CR
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current
0
0.2
0.4
0.6
0.8
0 2 4 6 8 10 12 14
I
GSS
- Gate Current (mA)
V
GS
- Gate-Source Voltage (V)
T
J
= 25 °C
0
0.5
1
1.5
2
00.511.52
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 5 V thru 2 V
V
GS
= 1 V
V
GS
= 1.5 V
0.20
0.40
0.60
0.80
00.511.52
R
DS(on)
- On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
= 4.5 V
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
0 4 7 11 14
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0
0.1
0.2
0.3
0.4
0.5
0 0.3 0.6 0.9 1.2 1.5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
15
30
45
60
0 5 10 15 20
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
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Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
Vishay Siliconix
Si1012CR
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Soure-Drain Diode Forward Voltage
Threshold Voltage
0
2
4
6
8
00.511.5
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 16 V
I
D
= 0.6 A
V
DS
= 5 V
V
DS
= 10 V
0.1
1
10
0.0 0.3 0.6 0.9 1.2 1.5
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
TJ= 150 °C
TJ= 25 °C
0.35
0.45
0.55
0.65
0.75
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.6
0.8
1.0
1.2
1.4
1.6
-50-250 255075100125150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 0.5 A V
GS
= 4.5 V
V
GS
= 2.5 V
0
0.2
0.4
0.6
0.8
012345
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ= 125 °C
TJ= 25 °C
ID= 0.5 A
0
0.6
1.2
1.8
2.4
3
0.01 0.1 1 10 100
Power (W)
Time (s)
Document Number: 67519
S13-0195-Rev. E, 28-Jan-13
www.vishay.com
5
Vishay Siliconix
Si1012CR
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67519.
Safe Operating Area, Junction-to-Ambient
Power Derating, Junction-to-Ambient
0
0.06
0.12
0.18
0.24
0 255075100125150
Power (W)
TA- Ambient Temperature (°C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 650 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Package Information
www.vishay.com Vishay Siliconix
C15-1445-Rev. F, 23-Nov-15 1Document Number: 71348
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SC-75A: 3 Leads
DWG: 5868
Notes
Dimensions in millimeters will govern.
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
C
MBA –
2X
1 2
3
A
1
2
D
C
bbb
4
B
3
D
3
D
D
Dbbb
D
bbb
D
e2
B1(b1)
3
e1
2XB1
E1
2X
e3
2
E
E/2
D
bbb
4X
D
Seating Plane
A
A2
A1
Base Metal
With Tin Planting
Section B-B 5
B1
b1
C
c1
L2
L
L1
B
B
2X
1
ddd
C
C
1
1
DIMENSIONS TOLERANCES
aaa 0.10
bbb 0.10
ccc 0.10
ddd 0.10
DIM. MILLIMETERS NOTE
MIN. NOM. MAX.
A- -0.80
A1 0.00 - 0.10
A2 0.65 0.70 0.80
B1 0.19 - 0.24 5
b1 0.17 - 0.21
c0.13-0.155
c1 0.10 - 0.12 5
D 1.48 1.575 1.68 1, 2
E 1.50 1.60 1.70
E1 0.66 0.76 0.86 1, 2
e1 0.50 BSC
e2 1.00 BSC
e3 0.50 BSC
L 0.15 0.205 0.30
L1 0.40 ref.
L2 0.15 BSC
q0°-8°
q1 4° - 10°
Application Note 826
Vishay Siliconix
Document Number: 72603 www.vishay.com
Revision: 21-Jan-08 19
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SC-75A: 3-Lead
0.014
(0.356)
0.071
(1.803)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.264
(0.660)
0.054
(1.372)
0.031
(0.798)
0.020
(0.503)
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Revision: 08-Feb-17 1Document Number: 91000
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