February 2010 Rev 12 1/56
1
M29W320DT
M29W320DB
32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks,
Boot Block), 3V Supply Flash memory
Feature summary
Supply Voltage
–V
CC = 2.7V to 3.6V for Program , Erase and
Read
–V
PP =12V for Fast Program (optional)
Access time: 70, 80, and 90 ns
Programming time
– 10µs per Byte/Word typi cal
67 memory blocks
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 64 Main Blocks
Program/Erase controller
– Embedded Byte/Word Program algorithms
Erase Suspend and Resume mo des
– Read and Program another Block duri ng
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
VPP/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
– 64 bit Security code
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per bloc k
Electronic Signature
– Manufacturer Code: 0020h
– Top Device Code M29W320DT: 22CAh
– Bottom Device Code M29W320DB: 22CBh
RoHS packages available
Automotive Grade Parts Available
FBGA
TSOP48 (N)
12 x 20mm
TFBGA48 (ZE)
www.numonyx.com
Contents M29W320DT, M29W320DB
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Contents
1 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.1 Address Inputs (A0-A20) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.2 Data Inputs/Outputs (DQ0-DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.3 Data Inputs/Outputs (DQ8-DQ14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.4 Data Input/Output or Address Input (DQ15A–1) . . . . . . . . . . . . . . . . . . . 12
2.5 Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.6 Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.7 Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.8 VPP/Write Protect (V PP/WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.9 Reset/Block Temporary Unprotect (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.10 Ready/Busy Output (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.11 Byte/Word Organization Select (BYTE) . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.12 VCC Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.13 VSS Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3 Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1 Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.2 Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.3 Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.4 Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.5 Automatic Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.6 Special bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.6.1 Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.6.2 Block Protect and Chip Unprotect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4 Command Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.1 Read/Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2 Auto Select command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3 Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.4 Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
M29W320DT, M29W320DB Contents
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4.5 Unlock Bypass command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.6 Unlock Bypass Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.7 Unlock Bypass Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.8 Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.9 Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.10 Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.11 Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.12 Block Protect and Chip Unprotect commands . . . . . . . . . . . . . . . . . . . . . 21
5 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.1 Data Polling Bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.2 Toggle Bit (DQ6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.3 Error Bit (DQ5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.4 Erase Timer Bit (DQ3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
5.5 Alternative Toggle Bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
7 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
8 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
9 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Appendix A Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Appendix B Common Flash Interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Appendix C Block Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
C.1 Programmer Technique. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
C.2 In-System Technique. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
List of tables M29W320DT, M29W320DB
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List of tables
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2. Bus Operations, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Table 3. Bus Operations, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Table 4. Commands, 16-bit mode, BYTE = VIH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 5. Commands, 8-bit mode, BYTE = VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 6. Pr ogram, Erase Times and Program, Erase Endurance Cycles. . . . . . . . . . . . . . . . . . . . . 24
Table 7. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 8. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 9. Operating an d AC Me as ur em e nt Con ditio n s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 10. Device Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 11. DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 12. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 13. Write AC Characteristics, Write Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 14. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 15. Reset/Block Temporary Unprotect AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data. . . . . . . 37
Table 17. TFBG A4 8 6x 8m m - 6x8 Ball Arr ay , 0.8 m m Pitc h, Package Mechanical Data . . . . . . . . . . 38
Table 18. Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 19. Top Boot Block Addresses, M29W320DT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 20. Bottom Boot Block Addresses, M29W320DB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 21. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 22. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 23. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 24. Device Geometry Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 25. Primary Algorithm-Specific Extended Query Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Table 26. Sec ur ity Co de Area. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Table 27. Programmer Technique Bus Operations, BYTE = VIHor VIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49
Table 28. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
M29W320DT, M29W320DB List of figures
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List of figures
Figure 1. Logic Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 2. TSOP Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 3. TFBGA48 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 4. Block Addresses (x8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. Block Addresses (x16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 6. Data Polling Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7. Data Toggle Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 8. AC Measurement I/O Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 9. Read Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 10. Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 11. Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 12. Reset/Block Temporary Unprotect AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 13. Accele rate d Pro gr a m Tim in g Wa veforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 14. TSOP48 Lead Plastic Thin Small Outline, 12x20 Mm, Top View Package Outline . . . . . . 37
Figure 15. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline . . . . . . . 38
Figure 16. Programmer Equipment Block Protect Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 17. Programmer Equipment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 18. In-System Equipment Block Protect Flowchart. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 19. In-System Equi pment Chip Unprotect Flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Summary description M29W320DT, M29W320DB
6/56
1 Summary description
The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage
(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be
read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to
preserve valid data while old data is erased. Each block can be protected independently to
prevent accide n tal Program or Erase com m and s f rom mo d ifyin g the me m or y. Program an d
Erase commands are written to th e Command Interface of the mem ory. An on-chip
Program/Erase Controller sim plifies the pro cess of programming or erasing the memory by
takin g care of all of the spe cial operations that are requ ired to upda te the memory co ntent s.
The end of a program or erase operation can be detected and any error conditions
identified. The command set required to control the memory is consistent with JEDEC
standards.
The blocks in the memory ar e asymmetrically arranged, see Figure 4 and Figure 5, Table 19
and Table 20. The first or last 64 Kbytes have been divided into four additional blocks. The
16 Kbyte Boot Block can be used for small initialization code to st art the microp rocessor, the
two 8 Kbyte Parameter Blocks ca n be used for parameter storage and the remaining 32
Kbyte is a small Main Block where the application may be stored.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the
memory. They allow simple connection to most microprocessors, of ten without additional
logic.
The memory is offered in TSOP48 (12 x 20mm), and TFBGA48 (6x8mm, 0.8m m pitch)
packages. In order to meet environmental requirements, Numonyx offers the M29W320D in
ECOPACK® packages. ECOPACK packages are Lead-free. The category of second Level
Interconnect is marked on the package and on the inner box label, in compliance with
JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label.
The memory is supplied with all the bit s erased (set to 1).
M29W320DT, M29W320DB Summary description
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Figure 1. Logic Diagram
Table 1. Signal Names
A0-A20 Address Inputs
DQ0-DQ7 Dat a Inputs /Ou tputs
DQ8-DQ14 Data Inputs/Outputs
DQ15A–1 Data Input/Output or Address Input
EChip Enable
GOutput Enable
WWrite Enable
RP Reset/Block Temporary Unprotect
RB Ready/Busy Output
BYTE Byte/Word Organization Select
VCC Supply Voltage
VPP/WP VPP/Write Protect
VSS Ground
NC Not Connected Internally
AI90189B
21
A
0-A20
W
DQ0-DQ1
4
VCC
M29W320DT
M29W320DB
E
VSS
15
G
RP
DQ15A–1
RB
VPP/WP
BYTE
Summary description M29W320DT, M29W320DB
8/56
Figure 2. TSOP Connections
DQ3
DQ9
DQ2
A6 DQ0
W
A3
RB
DQ6
A8
A9 DQ13
A17
A10 DQ14
A2
DQ12
DQ10
DQ15A–1
VCC
DQ4
DQ5
A7
DQ7
VPP/WP
NC
AI90190
M29W320DT
M29W320DB
12
1
13
24 25
36
37
48
DQ8
A20
A19
A1
A18
A4
A5
DQ1
DQ11
G
A12
A13
A16
A11
BYTE
A15
A14 VSS
E
A0
RP
VSS
M29W320DT, M29W320DB Summary description
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Figure 3. TFBGA48 Connections (Top view through packa ge)
654321
VSS
A15
A14
A12
A13
DQ3
DQ11
DQ10
A18
VPP
/
WP
RB
DQ1
DQ9
DQ8
DQ0
A6
A17
A7
G
E
A0
A4
A3
DQ2
DQ6
DQ13
DQ14
A10
A8
A9
DQ4
VCC
DQ12
DQ5
A19
NC
RP
W
A11
DQ7
A1
A2
VSS
A5 A20
A16
BYTE
C
B
A
E
D
F
G
H
DQ15
A–1
AI08084
Summary description M29W320DT, M29W320DB
10/56
Figure 4. Block Addresses (x8)
1. Also see Appendix A: Block Addresses, Table 19 and Table 20 for a full listing of the Block Addresses.
AI90192
16 KByte
3FFFFFh
3FC000h
64 KByte
01FFFFh
010000h
64 KByte
00FFFFh
000000h
M29W320DT
Top Boot Block Addresses (x8)
32 KByte
3F7FFFh
3F0000h
64 KByte
3E0000h
3EFFFFh
Total of 63
64 KByte Blocks
16 KByte
3FFFFFh
3F0000h 64 KByte
64 KByte
003FFFh
000000h
M29W320DB
Bottom Boot Block Addresses (x8)
32 KByte
3EFFFFh
01FFFFh 64 KByte
3E0000h
010000h
Total of 63
64 KByte Blocks
00FFFFh
008000h
8 KByte
8 KByte
3FBFFFh
3FA000h
3F9FFFh
3F8000h
8 KByte
8 KByte
007FFFh
006000h
005FFFh
004000h
M29W320DT, M29W320DB Summary description
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Figure 5. Block Addresses (x16)
1. Also see Appendix Appendix A: Block Addresses, Table 19 and Table 20 for a full listing of the Block Addresses.
AI90193
8 KWord
1FFFFFh
1FE000h
32 KWord
00FFFFh
008000h
32 KWord
007FFFh
000000h
M29W320DT
Top Boot Block Addresses (x16)
16 KWord
1FBFFFh
1F8000h
32 KWord
1F0000h
1F7FFFh
Total of 63
32 KWord Blocks
8 KWord
1FFFFFh
1F8000h 32 KWord
32 KWord
001FFFh
000000h
M29W320DB
Bottom Boot Block Addresses (x16)
16 KWord
1F7FFFh
00FFFFh 32 KWord
1F0000h
008000h
Total of 63
32 KWord Blocks
007FFFh
004000h
4 KWord
4 KWord
1FDFFFh
1FD000h
1FCFFFh
1FC000h
4 KWord
4 KWord
003FFFh
003000h
002FFFh
002000h
Signal descriptions M29W320DT, M29W320DB
12/56
2 Signal descriptions
See Figure 1: Logic Diagram, and Table 1: Signal Names, for a brief overview of the signals
connected to this device.
2.1 Address Inputs (A0-A20)
The Address Inputs select the cells in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the Command
Interface of the internal state machine.
2.2 Data Inputs/Outputs (DQ0-DQ7)
The Data I/O outputs the data stored at the selected address during a Bus Read operation.
During Bus Write operations they represent the commands sent to the Command Interface
of the internal state machine.
2.3 Data Inputs/Outputs (DQ8-DQ14)
The Data I/O outputs the data stored at the selected address during a Bus Read operation
when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are high
impedance. During Bus Write operations the Command Register does not use these bits.
When reading the Status Register these bits should be ignored.
2.4 Data Input/Output or Address Input (DQ15A–1)
When BYTE is High, VIH, this pin behaves as a Data Input/Output pin ( as DQ8-DQ1 4).
When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the
LSB of the Word on the other addresses, DQ15A–1 High will select the MSB. Throughout
the text consider references to the Data Input/Output to include this pin when BYTE is High
and references to the Address Inputs to include this pin when BYTE is Low except when
stated explicitly otherwise.
2.5 Chip Enable (E)
The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to
be performed. When Chip Enable is High, VIH, all other pin s ar e ign or ed .
2.6 Output Enable (G)
The Output Enable, G, controls the Bus Read operation of the memo ry.
M29W320DT, M29W320DB Signal descriptions
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2.7 Write Enable (W)
The Wr ite Enable, W, controls the Bus W rite operation of the m emory’ s Command Interface.
2.8 VPP/Write Protect (VPP/WP)
The VPP/Write Protect pin provides two functions. The VPP function allows the memory to
use an external high voltage power supply to reduce the time required for Unlock Bypass
Program operations. The Write Protect function provides a hardware method of protecting
the 16 Kbyte Boot Block. The VPP/Write Protect pin must not be left floating or unconnected.
When VPP/Write Protect is Lo w , VIL, the memory protects the 16 Kbyte Boot Block; Program
and Erase operations in this block are ignored while VPP/Write Protect is Low.
When VPP/Write Protect is High, VIH, the memory rever ts to the prev iou s prote c t ion status
of the 16 Kbyte boot block. Program and Erase operations can now modify the data in the
16 Kbyte Boot Block unless the block is protected using Block Protection.
When VPP/Write Protect is raised to VPP the memory automatically enters the Unlock
Bypass mode. When VPP/Write Protect returns to V IH or VIL normal operation resumes.
During Unlock Byp ass Program operations the mem ory draws IPP from the pin to supply the
programming circuits. See the description of the Unlock Bypass command in the Comm and
Interface section. The transitions from VIH to VPP and from VPP to VIH must be slower than
tVHVPP, see Figure 13.
Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the
memory may be left in an indeterminate state.
A 0.1µF capacitor should be connected between the VPP/Write Protect pin and the VSS
Ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during Unlock Bypass Program, IPP.
2.9 Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all Blocks that have been protected.
Note that if VPP/WP is at VIL, then the 16 KByte outermost boot block will remain protect
even if RP is at VID.
A Hardware Reset is achieved by hold ing Reset/Block Temporary Unprotect Lo w, VIL, for at
least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be
ready for Bus Read and Bus Write opera tion s after tPHEL or tRHEL, whichever occurs last.
See the Ready/Busy Output section, Table 15 and Figure 12, for more details.
Holding RP at VID will temporarily unprotect the protected Blocks in the memory. Program
and Erase operations on all blocks will be possible. The transition from VIH to VID must be
slower than tPHPHH.
Signal descriptions M29W320DT, M29W320DB
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2.10 Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain outpu t tha t can be used to identify when th e device is
performing a Program or Erase operation. During Pro gram or Erase operatio ns Ready/Busy
is Low, VOL. Ready/Busy is high-impedance during Read mode, Auto Select mode and
Erase Suspend mode.
Note that if VPP/WP is at VIL, then the 16 KByte outermost boot block will remain protect
even if RP is at VID.
After a Ha rdware Reset, Bus Read and Bus W rite operations cannot b egin until Ready/Busy
becomes high-impedance. See Table 15 and Figure 12.
The use of an open-drain outp ut allows the Ready/Busy pins from se veral memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.11 Byte/Word Organization Select (BYTE)
The Byte/Word Organization Select pin is used to switch between the x8 and x16 Bus
modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in
x8 mode, when it is High, VIH, the memory is in x16 mode.
2.12 VCC Supply Voltage
VCC provides the power supply for all operations (Read, Program and Erase).
The Command Interface is disa bled when the VCC Supply Voltage is less than the Lockout
Voltage, VLKO. This preven ts Bus Write operations from accidentally damaging the data
during power up, power down an d power surges. If the Program/Erase Controller is
programming or e rasing during th is time then the oper ation aborts a nd the memory conten ts
being altered will be invalid.
A 0.1µF capacitor should be connected between the VCC Supply Voltage pin and the VSS
Ground pin to decouple the current surges from the power supply. The PCB track widths
must be suf f ici ent to car ry the cur rents required during Program and Era se op erat ions, ICC3.
2.13 VSS Ground
VSS is the reference for all voltage measurements.
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3 Bus operations
There are five standard bus operations that control the device. These ar e Bus Read, Bus
Write, Output Disable, Standby and Automatic Standby. See Table 2 and Table 3, Bus
operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write
Enable are ignored by the memory and do not affect bus operations.
3.1 Bus Read
Bus Read operations read from the memory cells, or specific registers in the Command
Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write
Enable High, VIH. The Data Input s/Outputs will output the value, see Figure 9: Read Mode
AC Waveforms, and Table 12: Read AC Characteristics, for details of when the output
becomes valid.
3.2 Bus Write
Bus Write oper ations write to the Command Interface. A valid Bus Write operat ion begins by
setting the desired address on the Address Inputs. The Address Inputs are latched by the
Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs
last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of
Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH,
during the whole Bus Write operation. See Figure 10 and Figure 11, Write AC waveforms,
and Table 13 and Table 14, Write AC Characteristics, for details of th e tim i ng requ ire me n ts.
3.3 Output Disable
The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.
3.4 Standby
When Chip Enable is High, VIH, the memory enter s Stan db y mo d e an d th e Da ta
Inputs/Outpu ts pins are placed in the high -impedance st ate. To reduce the Supply Current to
the Standby Supply Curre nt , ICC2, Chip Enable should be held within VCC ± 0.2V. For the
Standby current level see Table 11: DC Characteristics.
During program or erase operations the memory will continue to use the Program/Erase
Supply Current, ICC3, for Program or Er ase operations until the operation completes.
3.5 Automatic Standby
If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 300ns or
more the memory ente rs Automatic S tand by where the internal Supply Cu rrent is reduced to
the Standby Supply Curre nt , ICC2. The Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Bus operations M29W320DT, M29W320DB
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3.6 Special bus operations
Additional bus operations can be performed to read the Electronic Signature an d also to
apply and remove Block Protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require VID to be
applied to some pins.
3.6.1 Electronic Signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in Table 2
and Table 3, Bus Operations.
3.6.2 Block Protect and Chip Unprotect
Each block can be separately pr ot ec ted ag ain st ac cid en tal Program or Eras e. The who le
chip can be unprotected to allow the data inside the blocks to be changed.
Block Protect and Chip Unprotect operations ar e described in Appendix C: Bl ock Protection.
Ta ble 2. Bus Operations, BYTE = VIL(1)
Operation E G W Address Inputs
DQ15A–1, A0-A20
Data Inputs/Outpu ts
DQ14-DQ8 DQ7-DQ0
Bus Read VIL VIL VIH Cell Address Hi-Z Data Output
Bus Write VIL VIH VIL Command Address Hi-Z Data Input
Output Disable X VIH VIH X Hi-Z Hi-Z
Standby VIH X X X Hi-Z Hi-Z
Read Manufacturer
Code VIL VIL VIH A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH Hi-Z 20h
Read Device Code VIL VIL VIH A0 = VIH, A1 = VIL,
A9 = VID, Others VIL or VIH Hi-Z CAh (M29W320DT)
CBh (M29W320DB)
1. X = VIL or VIH.
Ta ble 3. Bus Operations, BYTE = VIH(1)
Operation E G W Address Inputs
A0-A20 Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
Bus Read VIL VIL VIH Cell Address Data Output
Bus Write VIL VIH VIL Command Address Data Input
Output Disable X VIH VIH XHi-Z
Standby VIH XXX Hi-Z
Read Manufacturer
Code VIL VIL VIH A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH 0020h
Read Device Code VIL VIL VIH A0 = VIH, A1 = VIL, A9 = VID,
Others VIL or VIH
22CAh (M29W320DT)
22CBh (M29W320DB)
1. X = VIL or VIH.
M29W320DT, M29W320DB Command Interface
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4 Command Interface
All Bus Write operations to the memory are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. Failure to observe a
valid sequence of Bus Write operations will result in the memory returning to Read mode.
The long command sequences are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-
bit or 8-bit m ode. See either Table 4, or Table 5, depending on the confi guration that is bei ng
used, for a summary of the commands.
4.1 Read/Reset command
The Read/Reset command returns the memory to its Read mode where it behaves like a
ROM or EPROM, unless otherwise stated. It also resets the errors in the Status Register.
Either one or three Bus Write operations can be used to issue the Read/Reset command.
The Read/Reset Command can be issued, between Bus Write cycles before the start of a
program or erase operation, to return the device to read mode. Once the program or erase
operation has started the Read/Reset command is no longer accepted. The Read/Reset
command will not abort an Erase operation when issued while in Erase Suspend.
4.2 Auto Select command
The Auto Select comma nd is used to read the Man ufacturer Code, the Device Code and the
Block Protection Status. Three consecutive Bus Write operations are required to issue the
Auto Select command. Once the Auto Select command is issued the memory remains in
Auto Select mode until a Read/Reset command is issu ed. Read CFI Query and Read/Reset
commands are accepted in Auto Select mode, all other commands are ignored.
From the Auto Select mode the Manufacturer Code can be read using a Bus Read
operation with A0 = VIL and A1 = V IL. The ot her addr ess bit s may b e set to either VIL or VIH.
The Manufacturer Code for Numonyx is 0020h.
The Device Code can be read using a Bu s Read ope ratio n with A0 = VIH and A1 = VIL. Th e
other addre ss bits may be set to eith er VIL or VIH. The Device Code for the M29W320DT is
22CAh and for the M29W320DB is 22CBh.
The Block Protection Status of each block can be read using a Bus Read operation with A0
= VIL, A1 = VIH, and A12-A20 specifying the address of the block. The other address bits
may be set to either VIL or VIH. If the addressed block is protected then 01h is output on
Data Inputs/Outputs DQ0-DQ7, otherwise 00h is output.
Command Interface M29W320DT, M29W320DB
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4.3 Read CFI Query command
The Read CFI Query Command is used to read data from the Common Flash Interface
(CFI) Memory Area. This command is valid when the device is in the Read Array mode, or
when the device is in Autoselected mode.
One Bus Write cycle is required to issue the Read CFI Query Command. Once the
command is issued subsequent Bus Read operations read from the Common Flash
Interface Memory Area.
The Read/Reset command must be issued to return the device to the previous mode (the
Read Array mode or Autoselected mode). A second Read/Reset command would be
needed if the device is to be put in the Read Array mode from Autoselected mode.
See Appendix B: Common Flash Interface (CFI), Table 21, Table 22, Table 23, Table 24,
Table 25 and Table 26 for details on the information contained in the Common Flash
Interface (CFI) memory area.
4.4 Program command
The Program command can be used to program a value to one address in the memory
array at a time. The com m an d req uir es four Bus Write opera tion s, the fin al writ e op era tion
latches the address and data in the intern al state machine and starts the Program/Erase
Controller.
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
During the program operation the memory will ignore all commands. It is not possible to
issue any command to abort or pause the operation. Typical program times are given in
Table 6. Bus Read operations during the program operation will output the Status Register
on the Data Inpu ts/Outputs. See the section on the Status Register for more details.
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs the memo ry will continue to output the Status
Register. A Read/Reset command must be issued to reset the error condition and return to
Read mode.
Note that the Program co mmand canno t chang e a bit set at ’0’ b ack to ’1’. One of the Erase
Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.
4.5 Unlock Bypass command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memor y. When the cycle time to the device is long (as with some
EPROM programmers) considerable time saving can be made by using these commands.
Three Bus Write operations are required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
The memory offers accelerated program operations through the VPP/Write Protect pin.
When the system asserts VPP on the VPP/Write Protect pin, the memory automatically
enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass
M29W320DT, M29W320DB Command Interface
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program command sequence. The memory uses the higher voltage on the VPP/Write
Protect pin, to accelerate the Unlock Bypass Program operation.
Never raise VPP/Write Protect to VPP from any mode except Read mode, otherwise the
memory may be left in an indeterminate state.
4.6 Unlock Bypass Program command
The Unlock Bypa ss Program command can be use d to program one address in the memory
array at a time. The command requires two Bus Write operations, the final write operation
latches the address and data in the intern al state machine and starts the Program/Erase
Controller.
The Program operation u sing the Unlock Bypass Program command behaves identically to
the Program operation using the Program command. The operation cannot be aborted, the
Status Register is read and protected blocks cannot be programmed. Errors must be reset
using the Read/Reset command , which leaves the device in Unlock Bypass Mode. See the
Program command for details on the behavior.
4.7 Unlock Bypass Reset command
The Unlock Bypass Reset command can be used to return to Read/Reset mode from
Unlock Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass
Reset command. Read/Reset command does not exit from Unlock Byp ass Mode.
4.8 Chip Erase command
The Chip Erase command can be used to erase the entire chip. Six Bus Write operations
are required to issue the Chip Erase Command and start the Program/Erase Controller.
If any blocks are protected then these are ignored and all the other blocks are erased. If all
of the blocks are protected the Chip Erase operation appears to start but will terminate
within about 10 0µs, leaving the d ata unchanged. No error condition is given when pro tected
blocks are ignored.
During the erase operation the memory will ignore all commands, including the Erase
Suspend command. It is not possible to issue any command to abort the operation. Typical
chip erase times ar e giv en in Table 6. All Bus Read operations during the Chip Erase
operation will output the Status Register on the Dat a Inputs/Output s. See the section on the
Status Register for more details.
After the Chip Erase operation has completed the memory will return to the Read Mode,
unless an error has occurred. When an error occurs the memory will continue to output the
Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read Mode.
The Chip Erase Command set s all of the bi ts in unprotected blocks of the memory to ’1’. All
previous data is lost.
Command Interface M29W320DT, M29W320DB
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4.9 Block Erase command
The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write
operations are requir ed to select the first block in the list. Each ad ditional block in the list can
be selected by repeating the sixth Bus Write operation using the address of the additional
block. The Block Erase operation starts the Program/Erase Controller about 50µs after the
last Bus Write operation. Once the Prog ra m/Er ase Controller starts it is not possible to
select any more blocks. Each additional block must therefore b e selected within 50µs of the
last block. The 50 µs timer rest art s when an ad ditional block is selected . The Status Register
can be read after the sixth Bus Write operation. See the Status Register section for details
on how to identify if the Program/Erase Controller has started the Block Erase operation.
If any selected blocks are protected then these are igno red and all the othe r selected blocks
are erased. If all of the selected blocks are protected the Block Erase operation appears to
start but will terminate within about 100µs, leaving the data unchanged. No error condition is
given when protected blocks are ignored.
During the Block Erase operation the memory will ignore all commands except the Erase
Suspend command . T yp ical block erase tim es are given in Table 6. All Bus Read operations
during the Block Erase operation will output the S tatus Register on the Data Inputs/Output s.
See the section on the Status Register for mor e details.
After the Block Erase operation has completed the memory will return to the Read Mode,
unless an error has occurred. When an error occurs the memory will continue to output the
Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read mode.
The Block Erase Command sets all of the bits in the unprotected selected blocks to ’1’. All
previous data in the select ed bl oc ks is lost.
4.10 Erase Suspend command
The Erase Suspend Command may be used to temporarily suspen d a Block Erase
operation and return the memor y to Read mode. The command requires one Bus Write
operation.
The Program/Erase Controller will suspend within the Erase Suspend Latency Time (refer to
Table 6 for value) of the Erase Suspend Command being issued. Once the Program/Erase
Controller has stopped the memory will be set to Read mode and the Erase will be
suspended. If the Erase Susp end command is issued d uring the period when the memor y is
waiting for an additional block (b efore the Program/Erase Controller starts ) then the Erase is
suspended immediately and will start immediately when the Erase Resume Command is
issued. It is not possible to select any further blocks to erase af ter the Erase Resume.
During Erase Suspend it is possible to Read and Program cells in blocks that are not being
erased; both Read and Program operations behave as normal on these blocks. If any
attempt is made to program in a protected block or in the suspended block then the Program
command is ignored and the data remains unchanged. The Status Register is not read and
no error condition is given. Reading from blocks that are being erased will output the S t atus
Register.
It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypa ss co mmands
during an Erase Suspend. The Read/Reset command must be issued to return the device to
Read Array mode before the Resume command will be accepted.
M29W320DT, M29W320DB Command Interface
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4.11 Erase Resume command
The Erase Resume command must be used to restart the Program/Erase Controller after an
Erase Suspend. The device must be in Read Array mode before the Resume command will
be accepted. An erase can be suspended and resumed more than once.
4.12 Block Protect and Chip Unprotect commands
Each block can be separately pr ot ec ted ag ain st ac cid en tal Program or Eras e. The who le
chip can be unprotected to allow the data inside the blocks to be changed.
Block Protect and Chip Unprotect operations ar e described in Appendix C: Bl ock Protection.
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Table 4. Commands, 16-bit mode, BYTE = VIH(1)(2)
Command
Length
Bus Write Operations
1st 2nd 3rd 4th 5th 6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read/Reset(3) 1X F0
3 555 AA 2AA 55 X F0
Auto Select(4) 3 555 AA 2AA 55 555 90
Program(5) 4 555 AA 2AA 55 555 A0 PA PD
Unlock Bypass(6) 3 555 AA 2AA 55 555 20
Unlock Bypass
Program(5) 2X A0PAPD
Unlock Bypass
Reset(7) 2X 90 X 00
Chip Erase(5) 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10
Block Erase(5) 6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30
Erase Suspend(8) 1X B0
Erase Resume(9) 1X 30
Read CFI Query(10) 155 98
1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in
hexadecimal.
2. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15
are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
3. After a Read/Reset command, read the memory as normal until another command is issued. Read/Reset command is
ignored during algorithm execution.
4. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
5. After Program, Unlock Bypass Program, Chip Erase, Block Erase commands read the Status Register until the
Program/Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase
Command with additional Bus Write Operations until Timeout Bit is set.
6. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
7. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
8. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program
commands on non-erasing blocks as normal.
9. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the
Program/Erase Controller completes and the memory returns to Read Mode.
10. CFI Query command is valid when device is ready to read array data or when device is in autoselected mode.
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Table 5. Commands, 8-bit mode, BYTE = VIL(1)(2)
Command
Length
Bus Write Operations
1st 2nd 3rd 4th 5th 6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read/Reset(3) 1X F0
3 AAA AA 555 55 X F0
Auto Select(4) 3 AAA AA 555 55 AAA 90
Program(5) 4 AAA AA 555 55 AAA A0 PA PD
Unlock Bypass(6) 3 AAA AA 555 55 AAA 20
Unlock Bypass
Program(5) 2 X A0 PA PD
Unlock Bypass
Reset(7) 2X 90 X 00
Chip Erase(5) 6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10
Block Erase(5) 6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30
Erase Suspend(8) 1X B0
Erase Resume(9) 1X 30
Read CFI Query(10) 1AA 98
1. X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in
hexadecimal.
2. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15
are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
3. After a Read/Reset command, read the memory as normal until another command is issued. Read/Reset command is
ignored during algorithm execution.
4. After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
5. After a Program, Unlock Bypass Program, Chip Erase, Block Erase command read the Status Register until the
Program/Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase
Command with additional Bus Write Operations until Timeout Bit is set.
6. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
7. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
8. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program
commands on non-erasing blocks as normal.
9. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the
Program/Erase Controller completes and the memory returns to Read Mode.
10. The CFI Query command is valid when device is ready to read array data or when device is in autoselected mode.
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Table 6. Program, Erase Times and Program, Erase Endurance Cycles
Parameter Min Typ(1)(2) Max(2) Unit
Chip Erase 40 200(3) s
Block Erase (64 KBytes) 0.8 6(4) s
Erase Suspend Latency Time 15 25(4) µs
Program (Byte or Word) 10 200(3) µs
Accelerated Program (Byte or Word) 8 150(3) µs
Chip Program (Byte by Byte) 40 200(3) s
Chip Program (Word by Word) 20 100(3) s
Program/Erase Cycles (per Block) 100,000 cycles
Data Retention 20 years
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and VCC.
M29W320DT, M29W320DB Status Register
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5 Status Register
Bus Read operations from any address always read the Status Register during Program
and Erase operations. It is also read du ring Erase Suspe nd when an add ress within a block
being erased is accessed.
The bits in the Status Register are summarized in Table 7: Status Register Bits.
5.1 Data Polling Bit (DQ7)
The Data Polling Bit can be used to identify whether the Program/Erase Controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Data
Polling Bit is output on DQ7 when the Status Register is read.
During Program operations the Data Polling Bit outputs the complement of the bit being
programmed to DQ7. After successful completion of the Program operation the memory
returns to Read mode and Bus Read operations from the address just programmed output
DQ7, not its complement.
During Erase operations the Dat a Polling Bit outputs ’0’, the complement of the erased state
of DQ7. After successful completion of the Erase operation the memory returns to Read
Mode.
In Erase Suspend mode the Data Polling Bit will output a ’1’ during a Bus Read operation
within a block being erased. The Data Polling Bit will change from a ’0’ to a ’1’ when the
Program/Erase Controller has suspended the Erase operation.
Figure 6: Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A
Valid Add ress is the address being programmed or an address within the block being
erased.
5.2 Toggle Bit (DQ6)
The Toggle Bit can be used to identify whether the Program/Erase Controller has
successfully completed its operation or if it has respon ded to an Erase Suspend. The Toggle
Bit is output on DQ6 when the Status Register is read.
During Program and Erase op erations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations at any address. After successf ul com p let ion of the
operation the memory returns to Read mode.
During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block
being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has
suspended the Erase operation.
If any attempt is made to erase a protected block, the operation is aborted, no error is
signalled and DQ6 toggles for approximately 100µs. If any attempt is made to program a
protected block or a suspended block, the operation is aborted, no error is signalled and
DQ6 toggles for ap p ro xim at ely 1µs .
Figure 7: Data Toggle Flowchart, gives an example of how to use the Data Toggle Bit.
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5.3 Error Bit (DQ5)
The Error Bit can be used to identify errors detected by the Program/Erase Controller. The
Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the
correct data to the memory. If the Error Bit is set a Read/Reset command must be issued
before other commands are issued. The Error bit is output on DQ5 when the S t atus Register
is read.
Note that the Prog ra m command cann ot cha nge a b it se t to ’0’ b ack to ’1’ and attemp tin g to
do so will set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’.
One of the Erase commands must be used to set all the bits in a block or in the whole
memory from ’0’ to ’1’.
5.4 Erase Timer Bit (DQ3)
The Erase Timer Bit can be used to identify the start of Program/Erase Controller oper ation
during a Block Erase command. Once the Program/Erase Controller starts erasing the
Erase Timer Bit is set to ’1’. Before the Program/Erase Controller starts the Erase Timer Bit
is set to ’0’ and additional blocks to be erased may be written to the Command Interface.
The Erase Timer Bit is output on DQ3 when the Status Register is read.
5.5 Alternative Toggle Bit (DQ2)
The Alternative Toggle Bit can be used to monitor the Program/Erase controller during
Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is
read.
During Chip Erase and Block Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’,
etc., with successive Bus Read operations from addresses within the blocks being erased.
A protected block is treated the sa me as a block not being erased. Once the operation
completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with
successive Bus Read operations from addresses within the blocks being erased. Bus Read
operations to addresses within blocks not being erased will output the memory cell data as if
in Read mode.
After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be
used to identify which block or blocks have caused the error. The Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read Operations from addresses
within blocks that have not erased correctly. The Alternative Toggle Bit does not change if
the addresse d blo ck has er as ed cor re ctly.
M29W320DT, M29W320DB Status Register
27/56
Figure 6. Data Polling Flowchart
Table 7. Status Register Bits(1)
Operation Address DQ7 DQ6 DQ5 DQ3 DQ2 RB
Program Any Address DQ7 Toggle 0 – – 0
Program During Erase
Suspend Any Address DQ7 Toggle 0 – – 0
Program Error Any Address DQ7 Toggle 1 – – 0
Chip Erase Any Address 0 Toggle 0 1 Toggle 0
Block Erase before
timeout Erasing Block 0 Toggle 0 0 To ggle 0
Non-Erasing Block 0 Toggle 0 0 No Toggle 0
Block Erase Erasing Block 0 Togg le 0 1 Toggle 0
Non-Erasing Block 0 Toggle 0 1 No Toggle 0
Erase Suspend Erasing Block 1 No Toggle 0 – Toggle 1
Non-Erasing Block Data read as normal 1
Erase Error Good Block Address 0 Toggle 1 1 No Toggle 0
Faulty Block Address 0 Toggle 1 1 Toggle 0
1. Unspecified data bits should be ignored.
READ DQ5 & DQ7
at VALID ADDRESS
START
READ DQ7
at VALID ADDRESS
FAIL PASS
AI90194
DQ7
=
DATA YES
NO
YES
NO
DQ5
= 1
DQ7
=
DATA YES
NO
Status Register M29W320DT, M29W320DB
28/56
Figure 7. Data Toggle Flowchart
READ DQ6
START
READ DQ6
TWICE
FAIL PASS
AI01370C
DQ6
=
TOGGLE NO
NO
YES
YES
DQ5
= 1
NO
YES
DQ6
=
TOGGLE
READ
DQ5 & DQ6
M29W320DT, M29W320DB Maximum rating
29/56
6 Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability. These are stress ratings only and
operation of the de vice at th ese or an y ot he r con d itio ns abo ve thos e ind i ca te d in th e
Operating sections of this specification is not implied. Refer also to the Numony x SURE
Program and other relevant quality docum ents.
Table 8. Absolute Maximum Ratings
Symbol Parameter Min Max Unit
TBIAS Temperature Under Bias –50 125 °C
TSTG Storage Temper ature –65 150 °C
VIO Input or Output Voltage(1)(2)
1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.
2. Maximum voltage may overshoot to VCC +2V during transition and for less than 20ns during transitions.
–0.6 VCC +0.6 V
VCC Supply Voltage –0.6 4 V
VID Identification Voltage –0.6 13.5 V
VPP Program Voltage –0.6 13.5 V
DC and AC parameters M29W320DT, M29W320DB
30/56
7 DC and AC parameters
This section summa riz es th e op e ratin g me as ur em e nt con dit ions , an d the DC an d AC
characterist ics of th e de vice. The parame ters in the DC and AC characteristics Tables that
follow, are derive d from te sts performed under the Measureme nt Co nd itions su mma rized in
Table 9: Operating and AC Measurement Conditions. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the
quoted pa rameters.
Figure 8. AC Measurement I/O Waveform
Table 9. Operating and AC Measurement Conditions
Parameter
M29W320D
Unit70(1) 7A 80 90
Min Max Min Max Min Max Min Max
VCC Supply Voltage 2.7 3.6 2.7 3.6 2.5 3.6 2.7 3.6 V
Ambient Operating
Temperature –40 85/125 –40 85 –40 125 –40 85 °C
Load Capacitance (CL)30303030pF
Input Rise and Fall Times 10 10 10 10 ns
Input Pulse Voltages 0 to VCC 0 to VCC 0 to VCC 0 to VCC V
Input and Output Timing Ref.
Voltages VCC/2 VCC/2 VCC/2 VCC/2 V
1. 85 °C is for industrial part code; 125 °C is for the Autograde part.
AI90196
VCC
0V
VCC/2
M29W320DT, M29W320DB DC and AC parameters
31/56
Figure 1. AC Measurement Load Circuit
Table 10. Device Capacitance(1)
1. Sampled only, not 100% tested.
Symbol Parameter Test Condition Min Max Unit
CIN Input Capacit ance VIN = 0V 6 pF
COUT Output Capacitance VOUT = 0V 12 pF
AI90197
CL
CL includes JIG capacitance
DEVICE
UNDER
TEST
25kΩ
VCC
25kΩ
VCC
0.1µF
VPP
0.1µF
DC and AC parameters M29W320DT, M29W320DB
32/56
Table 11. DC Characteristics
Symbol Parameter Test Condition Min Typ. Max Unit
ILI Input Leakage Current 0V ≤ VIN ≤ VCC ±1 µA
ILO Output Leakage Current 0V ≤ VOUT ≤ VCC ±1 µA
ICC1 Supply Current (Read) E = VIL, G = VIH,
f = 6MHz 510mA
ICC2 Supply Current (Standby) E = VCC ±0.2V,
RP = VCC ±0.2V 35 100 µA
ICC3(1) Supply Current
(Program/Erase)
Program/Eras
e
Controller
active
VPP/WP =
VIL or VIH 20 mA
VPP/WP =
VPP 20 mA
VIL Input Low Voltage –0.5 0.8 V
VIH Input High Voltage 0.7VCC VCC +0.3 V
VPP Voltage for VPP/WP
Program Acceleration VCC = 3.0V ±10% 11.5 12.5 V
IPP Current for VPP/WP
Program Acceleration VCC = 3.0V ±10% 10 mA
VOL Output Low Voltage IOL = 1.8mA 0.45 V
VOH Output High Voltage IOH = –100µAV
CC –0.4 V
VID Identification Voltage 11.5 12.5 V
IID Identification Current A9 = VID 100 µA
VLKO Program/Erase Lockout
Supply Voltage 1.8 2.3 V
1. Sampled only, not 100% tested.
M29W320DT, M29W320DB DC and AC parameters
33/56
Figure 9. Read Mode AC Waveforms
AI90198
tAVAV
tAVQV tAXQX
tELQX tEHQZ
tGLQV
tGLQX tGHQX
VALID
A0-A20/
A–1
G
DQ0-DQ7/
DQ8-DQ15
E
tELQV tEHQX
tGHQZ
VALID
tBHQV
tELBL/tELBH tBLQZ
BYTE
Table 12. Read AC Characteristics
Symbol Alt Parameter Test Condition M29W320D Unit
70/7A 80 90
tAVAV tRC Address Valid to Next Address Valid E = VIL,
G = VIL Min 70 80 90 ns
tAVQV tACC Address Valid to Output Va lid E = VIL,
G = VIL Max 70 80 90 ns
tELQX(1) tLZ Chip Enable Low to Output Transition G = VIL Min 0 0 0 ns
tELQV tCE Chip Enable Low to Output Valid G = VIL Max 70 80 90 ns
tGLQX(1) tOLZ Output Enable Low to Output
Transition E = VIL Min 0 0 0 ns
tGLQV tOE Output Enable Low to Output Valid E = VIL Max 30 30 35 ns
tEHQZ(1) tHZ Chip Enable High to Output Hi-Z G = VIL Max 25 25 30 ns
tGHQZ(1) tDF Output Enable High to Output Hi-Z E = VIL Max 25 25 30 ns
tEHQX
tGHQX
tAXQX
tOH
Chip Enable, Output Enable or
Address Tr ansition to Output
Transition Min 0 0 0 ns
tELBL
tELBH
tELFL
tELFH Chip Enable to BYTE Low or High Max 5 5 5 ns
tBLQZ tFLQZ BYTE Low to Output Hi-Z Max 25 25 30 ns
tBHQV tFHQV BYTE High to Output Valid Max 30 30 40 ns
1. Sampled only, not 100% tested.
DC and AC parameters M29W320DT, M29W320DB
34/56
Figure 10. Write AC Waveforms, Write Enable Controlled
AI90199
E
G
W
A0-A20/
A–1
DQ0-DQ7/
DQ8-DQ15
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWHtGHWL
RB
tWHRL
Table 13. Write AC Characteristics, Write Enable Controlled
Symbol Alt Parameter M29W320D Unit
70/7A 80 90
tAVAV tWC Address Valid to Next Address Valid Min 70 80 90 ns
tELWL tCS Chip Enable Low to Write Enable Low Min 0 0 0 ns
tWLWH tWP Write Enable Low to Write Enable High Min 45 45 50 ns
tDVWH tDS Input Valid to Write Enable High Min 45 45 50 ns
tWHDX tDH Write Enable High to Input Transition Min 0 0 0 ns
tWHEH tCH Write Enable High to Chip Enable High Min 0 0 0 ns
tWHWL tWPH Write Enable High to Write Enable Low Min 30 30 30 ns
tAVWL tAS Address Valid to Write Enable Low Min 0 0 0 ns
tWLAX tAH Write Enable Low to Address Transition Min 45 45 50 ns
tGHWL Output Enable High to Write Enable Low Min 0 0 0 ns
tWHGL tOEH Write Enable High to Output Enable Low Min 0 0 0 ns
tWHRL(1) tBUSY Program/Erase Valid to RB Low M ax 30 30 35 ns
tVCHEL tVCS VCC High to Chip Enable Low Min 50 50 50 µs
1. Sampled only, not 100% tested.
M29W320DT, M29W320DB DC and AC parameters
35/56
Figure 11. Write AC Waveforms, Chip Enable Controlled
AI90200
E
G
W
A0-A20/
A–1
DQ0-DQ7/
DQ8-DQ15
VALID
VALID
VCC
tVCHWL
tEHWH
tEHEL
tWLEL
tAVEL
tEHGL
tELAX
tEHDX
tAVAV
tDVEH
tELEHtGHEL
RB
tEHRL
Table 14. Write AC Characteristics, Chip Enable Controlled
Symbol Alt Parameter M29W320D Unit
70/7A 80 90
tAVAV tWC Address Valid to Next Address Valid Min 70 80 90 ns
tWLEL tWS Write Enable Low to Chip Enable Low Min 0 0 0 ns
tELEH tCP Chip Enable Low to Chip Enable High Min 45 45 50 ns
tDVEH tDS Input Valid to Chip Enable High Min 45 45 50 ns
tEHDX tDH Chip Enable High to Input T ransition Min 0 0 0 ns
tEHWH tWH Chip Enable High to Write Enable High Min 0 0 0 ns
tEHEL tCPH Chip Enable High to Chip Enable Low Min 30 30 30 ns
tAVEL tAS Address Valid to Chip Enable Low Min 0 0 0 ns
tELAX tAH Chip Enable Low to Address Transition Min 45 45 50 ns
tGHEL Output Enable High Chip Enable Low M in 0 0 0 n s
tEHGL tOEH Chip Enable High to Output Enable Low Min 0 0 0 ns
tEHRL(1) tBUSY Program/Erase Valid to RB Low Max 30 30 35 ns
tVCHWL tVCS VCC High to Write Enable Low Min 50 50 50 µs
1. Sampled only, not 100% tested.
DC and AC parameters M29W320DT, M29W320DB
36/56
Figure 12. Reset/Block Temporary Unprotect AC Waveforms
Figure 13. Accelerated Program Timing Waveforms
AI02931c
RB
W,
RP tPLPX
tPHWL, tPHEL, tPHGL
tPLYH
tPHPHH
E, G
tRHWL, tRHEL, tRHGL
Table 15. Reset/Block Temporary Unprotect AC Characteristics
Symbol Alt Parameter M29W320D Unit
70/7A 80 90
tPHWL(1)
tPHEL
tPHGL(1) tRH RP High to Write Enable Low , Chip Enable Low ,
Output Enable Low Min 50 50 50 ns
tRHWL(1)
tRHEL(1)
tRHGL(1) tRB RB High to Write Enable Low , Chip Enable Low ,
Output Enable Low Min 0 0 0 ns
tPLPX tRP RP Pulse Width Min 500 500 500 ns
tPLYH(1) tREADY RP Low to Read Mode Max 25 25 25 µs
tPHPHH(1) tVIDR RP Rise Time to VID Min 500 500 500 ns
tVHVPP(1) VPP Rise and Fall Time Min 250 250 250 ns
1. Sampled only, not 100% tested.
AI90202
VPP/WP
VPP
VIL or VIH tVHVPP tVHVPP
M29W320DT, M29W320DB Package mechanical
37/56
8 Package mechanical
Figure 14. TSOP48 Lead Plastic Thin Small Outline, 12x20 Mm, Top View Package Outline
1. Drawing not to scale.
TSOP-G
B
e
DIE
C
LA1 α
E1
E
A
A2
1
24
48
25
D1
L1
CP
Table 16. TSOP48 Lead Plastic Thin Small Outline, 12x20 mm, Package Mechanical Data
Symbol millimeters inches
Typ Min Max Typ Min Max
A 1.200 0.0472
A1 0.100 0.050 0.150 0.0039 0.0020 0.0059
A2 1.000 0.950 1.050 0.0394 0.0374 0.0413
B 0.220 0.170 0.270 0.0087 0.0067 0.0106
C 0.100 0.210 0.0039 0.0083
CP 0.080 0.0031
D1 12.000 11.900 12.100 0.4724 0.4685 0.4764
E 20.000 19.800 20.200 0.7874 0.7795 0.7953
E1 18.400 18.300 18.500 0.7244 0.7205 0.7283
e 0.500 – – 0.0197 – –
L 0.600 0.500 0.700 0.0236 0.0197 0.0276
L1 0.800 0.0315
a305305
Package mechanical M29W320DT, M29W320DB
38/56
Figure 15. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Bottom View Package Outline
1. Drawing not to scale.
E1E
D1
D
eb
A2
A1
A
BGA-Z32
ddd
FD
FE SD
SE
e
BALL "A1"
Table 17. TFBGA48 6x8mm - 6x8 Ball Array, 0.8mm Pitch, Package Mechanical Data
Symbol millimeters inches
Typ Min Max Typ Min Max
A 1.200 0.0472
A1 0.260 0.0102
A2 0.900 0.0354
b 0.350 0.450 0.0138 0.0177
D 6.000 5.900 6.100 0.2362 0.2323 0.2402
D1 4.000 – – 0.1575 – –
ddd 0.100 0.0039
E 8.000 7.900 8.100 0.3150 0.3110 0.3189
E1 5.600 – – 0.2205 – –
e 0.800 – – 0.0315 – –
FD 1.000 – – 0.0394 – –
FE 1.200 – – 0.0472 – –
SD 0.400 – – 0.0157 – –
SE 0.400 – – 0.0157 – –
M29W320DT, M29W320DB Part numbering
39/56
9 Part numbering
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc...) or for further information on any
aspect of this device , ple as e contact the Num o ny x Sale s Office nearest to yo u.
Table 18. Ordering Information Scheme
Example: M29W320DB 7A N 6 E
Device Type
M29
Operating Voltage
W = VCC = 2.7 to 3.6V
Device Fu nc tion
320D = 32 Mbit (x8/x16), Non-Uniform Parameter Blocks, B oot Block
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
7A = 70 ns device speed in conjuction with temperature range = 6
denotes Auto Grade –40 °C to 85 °C parts
70 = 70 ns device speed in conjuction with temperature range = 6
denotes Industrial Grade –40 °C to 85 °C parts; temperature range =
3 denotes Auto Grade –40 °C to 125 °C parts
80 = 80 ns device speed in conjuction with temperature range = 3
denotes Automotive Grade –40 °C to 125 °C parts with extended
VCC range (min 2.5 V)
90 = 90 ns device speed in conjuction with temperature range = 6
denotes Industrial Grade –40 °C to 85 °C parts
Package
N = TSOP48: 12 x 20 mm
ZE = TFBGA48: 6 x 8mm, 0.8mm pitch
ZA = TFBGA48: 6 x 8mm, 0.8mm pitch
Temperature Range
6 = Temperature range, –40 to 85 °C
3 = Automotive temperature range, –40 to 125 °C
Option
Blank = Standard Packing
T = Tape & Reel Packing
E = RoHS Package, Standard Packing
F = RoHS Package, Tape & Reel Packing
Block Addresses M29W320DT, M29W320DB
40/56
Appendix A Block Addresses
Table 19. Top Boot Block Addresses, M29W320DT
#Size
(KByte/KWor
d)
Address Range
(x8) Address Range
(x16)
66 16/8 3FC000h-3FFFFFh 1FE000h-1FFFFFh
65 8/4 3FA000h-3FBFFFh 1FD000h-1FDFFFh
64 8/4 3F8000h-3F9FFFh 1FC000h-1FCFFFh
63 32/16 3F0000h-3F7FFFh 1F8000h-1FBFFFh
62 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh
61 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh
60 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh
59 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh
58 64/32 3A0000h-3AFFFFh 1D0000h-1D7FFFh
57 64/32 390000h-39FFFFh 1C8000h-1CFFFFh
56 64/32 380000h-18FFFFh 1C0000h-1C7FFFh
55 64/32 370000h-37FFFFh 1B8000h-1BFFFFh
54 64/32 360000h-36FFFFh 1B0000h-1B7FFFh
53 64/32 350000h-35FFFFh 1A8000h-1AFFFFh
52 64/32 340000h-34FFFFh 1A0000h-1A7FFFh
51 64/32 330000h-33FFFFh 198000h-19FFFFh
50 64/32 320000h-32FFFFh 190000h-197FFFh
49 64/32 310000h-31FFFFh 188000h-18FFFFh
48 64/32 300000h-30FFFFh 180000h-187FFFh
47 64/32 2F0000h-2FFFFFh 178000h-17FFFFh
46 64/32 2E0000h-2EFFFFh 170000h-177FFFh
45 64/32 2D0000h-2DFFFFh 168000h-16FFFFh
44 64/32 2C0000h-2CFFFFh 160000h-167FFFh
43 64/32 2B0000h-2BFFFFh 158000h-15FFFFh
42 64/32 2A0000h-2AFFFFh 150000h-157FFFh
41 64/32 290000h-29FFFFh 148000h-14FFFFh
40 64/32 280000h-28FFFFh 140000h-147FFFh
39 64/32 270000h-27FFFFh 138000h-13FFFFh
38 64/32 260000h-26FFFFh 130000h-137FFFh
37 64/32 250000h-25FFFFh 128000h-12FFFFh
36 64/32 240000h-24FFFFh 120000h-127FFFh
M29W320DT, M29W320DB Block Addresses
41/56
35 64/32 230000h-23FFFFh 118000h-11FFFFh
34 64/32 220000h-22FFFFh 110000h-117FFFh
33 64/32 210000h-21FFFFh 108000h-10FFFFh
32 64/32 200000h-20FFFFh 100000h-107FFFh
31 64/32 1F0000h-1FFFFFh 0F8000h-0FBFFFh
30 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh
29 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh
28 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh
27 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh
26 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh
25 64/32 190000h-19FFFFh 0C8000h-0CFFFFh
24 64/32 180000h-18FFFFh 0C0000h-0C7FFFh
23 64/32 170000h-17FFFFh 0B8000h-0BFFFFh
22 64/32 160000h-16FFFFh 0B0000h-0B7FFFh
21 64/32 150000h-15FFFFh 0A8000h-0AFFFFh
20 64/32 140000h-14FFFFh 0A0000h-0A7FFFh
19 64/32 130000h-13FFFFh 098000h-09FFFFh
18 64/32 120000h-12FFFFh 090000h-097FFFh
17 64/32 110000h-11FFFFh 088000h-08FFFFh
16 64/32 100000h-10FFFFh 080000h-087FFFh
15 64/32 0F0000h-0FFFFFh 078000h-07FFFFh
14 64/32 0E0000h-0EFFFFh 070000h-077FFFh
13 64/32 0D0000h-0DFFFFh 068000h-06FFFFh
12 64/32 0C0000h-0CFFFFh 060000h-067FFFh
11 64/32 0B0000h-0BFFFFh 058000h-05FFFFh
10 64/32 0A0000h-0AFFFFh 050000h-057FFFh
9 64/32 090000h-09FFFFh 048000h-04FFFFh
8 64/32 080000h-08FFFFh 040000h-047FFFh
7 64/32 070000h-07FFFFh 038000h-03FFFFh
6 64/32 060000h-06FFFFh 030000h-037FFFh
5 64/32 050000h-05FFFFh 028000h-02FFFFh
4 64/32 040000h-04FFFFh 020000h-027FFFh
3 64/32 030000h-03FFFFh 018000h-01FFFFh
2 64/32 020000h-02FFFFh 010000h-017FFFh
1 64/32 010000h-01FFFFh 008000h-00FFFFh
0 64/32 000000h-00FFFFh 000000h-007FFFh
Table 19. Top Boot Block Addresses, M29W320DT (continued)
Block Addresses M29W320DT, M29W320DB
42/56
Table 20. Bottom Boot Block Addresses, M29W320DB
#Size
(KByte/KWord) Address Range
(x8) Address Range
(x16)
66 64/32 3F0000h-3FFFFFh 1F8000h-1FFFFFh
65 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh
64 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh
63 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh
62 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh
61 64/32 3A0000h-3AFFFFh 1D0000h-1D7FFFh
60 64/32 390000h-39FFFFh 1C8000h-1CFFFFh
59 64/32 380000h-18FFFFh 1C0000h-1C7FFFh
58 64/32 370000h-37FFFFh 1B8000h-1BFFFFh
57 64/32 360000h-36FFFFh 1B0000h-1B7FFFh
56 64/32 350000h-35FFFFh 1A8000h-1AFFFFh
55 64/32 340000h-34FFFFh 1A0000h-1A7FFFh
54 64/32 330000h-33FFFFh 198000h-19FFFFh
53 64/32 320000h-32FFFFh 190000h-197FFFh
52 64/32 310000h-31FFFFh 188000h-18FFFFh
51 64/32 300000h-30FFFFh 180000h-187FFFh
50 64/32 2F0000h-2FFFFFh 178000h-17FFFFh
49 64/32 2E0000h-2EFFFFh 170000h-177FFFh
48 64/32 2D0000h-2DFFFFh 168000h-16FFFFh
47 64/32 2C0000h-2CFFFFh 160000h-167FFFh
46 64/32 2B0000h-2BFFFFh 158000h-15FFFFh
45 64/32 2A0000h-2AFFFFh 150000h-157FFFh
44 64/32 290000h-29FFFFh 148000h-14FFFFh
43 64/32 280000h-28FFFFh 140000h-147FFFh
42 64/32 270000h-27FFFFh 138000h-13FFFFh
41 64/32 260000h-26FFFFh 130000h-137FFFh
40 64/32 250000h-25FFFFh 128000h-12FFFFh
39 64/32 240000h-24FFFFh 120000h-127FFFh
38 64/32 230000h-23FFFFh 118000h-11FFFFh
37 64/32 220000h-22FFFFh 110000h-117FFFh
36 64/32 210000h-21FFFFh 108000h-10FFFFh
35 64/32 200000h-20FFFFh 100000h-107FFFh
34 64/32 1F0000h-1FFFFFh 0F8000h-0FBFFFh
33 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh
M29W320DT, M29W320DB Block Addresses
43/56
32 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh
31 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh
30 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh
29 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh
28 64/32 190000h-19FFFFh 0C8000h-0CFFFFh
27 64/32 180000h-18FFFFh 0C0000h-0C7FFFh
26 64/32 170000h-17FFFFh 0B8000h-0BFFFFh
25 64/32 160000h-16FFFFh 0B0000h-0B7FFFh
24 64/32 150000h-15FFFFh 0A8000h-0AFFFFh
23 64/32 140000h-14FFFFh 0A0000h-0A7FFFh
22 64/32 130000h-13FFFFh 098000h-09FFFFh
21 64/32 120000h-12FFFFh 090000h-097FFFh
20 64/32 110000h-11FFFFh 088000h-08FFFFh
19 64/32 100000h-10FFFFh 080000h-087FFFh
18 64/32 0F0000h-0FFFFFh 078000h-07FFFFh
17 64/32 0E0000h-0EFFFFh 070000h-077FFFh
16 64/32 0D0000h-0DFFFFh 068000h-06FFFFh
15 64/32 0C0000h-0CFFFFh 060000h-067FFFh
14 64/32 0B0000h-0BFFFFh 058000h-05FFFFh
13 64/32 0A0000h-0AFFFFh 050000h-057FFFh
12 64/32 090000h-09FFFFh 048000h-04FFFFh
11 64/32 080000h-08FFFFh 040000h-047FFFh
10 64/32 070000h-07FFFFh 038000h-03FFFFh
9 64/32 060000h-06FFFFh 030000h-037FFFh
8 64/32 050000h-05FFFFh 028000h-02FFFFh
7 64/32 040000h-04FFFFh 020000h-027FFFh
6 64/32 030000h-03FFFFh 018000h-01FFFFh
5 64/32 020000h-02FFFFh 010000h-017FFFh
4 64/32 010000h-01FFFFh 008000h-00FFFFh
3 32/16 008000h-00FFFFh 004000h-007FFFh
2 8/4 006000h-007FFFh 003000h-003FFFh
1 8/4 004000h-005FFFh 002000h-002FFFh
0 16/8 000000h-003FFFh 000000h-001FFFh
Table 20. Bottom Boot Block Addresses, M29W320DB (continued)
Common Flash Interface ( CFI) M29W320DT, M29W320DB
44/56
Appendix B Common Flash Interface (CFI)
The Common Flash Interfa ce is a JEDEC approved, st andardized dat a structure that can be
read from the Flash memory device. It allows a system software to query the device to
determine various electrical and timing parameters, density informatio n and functions
supported by the memory. The system can interface easily with the device, enabling the
software to upgrade itself when necessary.
When the CFI Query Command is issued the device enters CFI Query mode and the data
structure is read from the memory. Table 21, Table 22, Table 23, Table 24, Table 25 and
Table 26 show the addresses used to retrieve the data. The CFI dat a structure also contains
a security area where a 64 bit unique security number is written (see Table 26, Security
Code area). This area can be ac cessed only in Read mode by the final user. It is impossible
to change the sec uri ty nu m be r after it has been written by Numonyx. Issue a Read
command to return to Re ad mode.
Table 21. Query Structure Overview(1)
Address Sub-section Name Description
x16 x8
10h 20h CFI Query Identification String Command set ID and algorithm data offset
1Bh 36h System Interface Information Device timing & voltage information
27h 4Eh Device Geometry Definiti on Flash device layout
40h 80h Primary Algorithm-specific Extended Query table Additional information specific to the Primary
Algorithm (optional)
61h C2h Security Code Area 64 bit unique device number
1. Query data are always presented on the lowest order data outputs.
Table 22. CFI Query Identification String(1)
Address Data Description Value
x16 x8
10h 20h 0051h “Q”
11h 22h 0052h Query Unique ASCII String "QRY" "R"
12h 24h 0059h "Y"
13h 26h 0002h Primary Algorithm Command Set and Control Interface ID code 16 bit
ID code defining a specific algorithm AMD Compatible
14h 28h 0000h
15h 2Ah 0040h Address for Primary Algorithm extended Query table (see Table 24) P = 40h
16h 2Ch 0000h
17h 2Eh 0000h Alternate Vend or Command Set and Control Interface ID Code
second vendor - specified algorithm supported NA
18h 30h 0000h
19h 32h 0000h Address for Alternate Algorithm extended Query table NA
1Ah 34h 0000h
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
M29W320DT, M29W320DB Common Flash Interface (CFI)
45/56
Table 23. CFI Query System Interface Information
Address Data Description Value
x16 x8
1Bh 36h 0027h VCC Logic Supply Minimum Pro gram/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV 2.7V
1Ch 38h 0036h VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV 3.6V
1Dh 3Ah 00B5h VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV 11.5V
1Eh 3Ch 00C5h VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV 12.5V
1Fh 3Eh 0004h Typical timeout per single byte/word program = 2n µs 16µs
20h 40h 0000h Typical timeout for minimum size write buffer program = 2n µs NA
21h 42h 000Ah Typical timeout per individual block erase = 2n ms 1s
22h 44h 0000h Typical time out for full chip er ase = 2n ms NA
23h 46h 0005h Maximum timeout for byte/word program = 2n times typical 512µs
24h 48h 0000h Maximum timeout for write buffer program = 2n times typical NA
25h 4Ah 0004h Maximum timeout per individual block erase = 2n times typical 16s
26h 4Ch 0000h Maximum timeout for chip erase = 2n times typical NA
Table 24. Device Geometry Definition
Address Data Description Value
x16 x8
27h 4Eh 0016h Device Size = 2n in number of bytes 4 MByte
28h
29h 50h
52h 0002h
0000h Flash Device Interface Code description x8, x16
Async.
2Ah
2Bh 54h
56h 0000h
0000h Maximum number of bytes in multi-byte program or page = 2n NA
2Ch 58h 0004h Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size. 4
2Dh
2Eh 5Ah
5Ch 0000h
0000h Region 1 Information
Number of identical size erase block = 0000h+1 1
2Fh
30h 5Eh
60h 0040h
0000h Region 1 Information
Block size in Region 1 = 0040h * 256 byte 16 Kbyte
Common Flash Interface ( CFI) M29W320DT, M29W320DB
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31h
32h 62h
64h 0001h
0000h Region 2 Information
Number of identical size erase block = 0001h+1 2
33h
34h 66h
68h 0020h
0000h Region 2 Information
Block size in Region 2 = 0020h * 256 byte 8 Kbyte
35h
36h 6Ah
6Ch 0000h
0000h Region 3 Information
Number of identical size erase block = 0000h+1 1
37h
38h 6Eh
70h 0080h
0000h Region 3 Information
Block size in Region 3 = 0080h * 256 byte 32 Kbyte
39h
3Ah 72h
74h 003Eh
0000h Region 4 Information
Number of identi ca l- si ze e rase bl o ck = 003Eh+1 63
3Bh
3Ch 76h
78h 0000h
0001h Region 4 Information
Block size in Region 4 = 0100h * 256 byte 64 Kbyte
Table 24. Device Geometry Definition (continued)
Address Data Description Value
x16 x8
Table 25. Primary Algorithm-Specific Extended Query Table
Address Data Description Value
x16 x8
40h 80h 0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
41h 82h 0052h "R"
42h 84h 0049h "I"
43h 86h 0031h Major version number, ASCII "1"
44h 88h 0030h Minor version number, ASCII "0"
45h 8Ah 0000h Address Sensitive Unlock (bits 1 to 0)
00 = required, 01= not required
Silicon Revision Number (bits 7 to 2) Yes
46h 8Ch 0002h Erase Suspend
00 = not supported, 01 = Read only, 02 = Read and Write 2
47h 8Eh 0001h Block Protection
00 = not supported, x = number of blocks in per group 1
48h 90h 0001h Temporary Block Unprotect
00 = not supported, 01 = supported Yes
49h 92h 0004h Block Protect /Unprotect
04 = M29W400B 4
4Ah 94h 0000h Simultaneous Operations, 00 = not supported No
4Bh 96h 0000h Burst Mode, 00 = not supported, 01 = supported No
4Ch 98h 0000h Page Mo de, 00 = not supported, 01 = 4 page word, 02 = 8 page
word No
M29W320DT, M29W320DB Common Flash Interface (CFI)
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4Dh 9Ah 00B5h VPP Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV 11.5V
4Eh 9Ch 00C5h VPP Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV 12.5V
4Fh 9Eh 000xh Top/Bottom Boot Block Flag
02h = Bottom Boot device, 03h = Top Boot device –
Table 25. Primary Algorithm-Specific Extended Query Table (continued)
Address Data Description Value
x16 x8
Table 26. Security Code Area
Address Data Description
x16 x8
61h C3h, C2h XXXX
64 bit: unique device number
62h C5h, C4h XXXX
63h C7h, C6h XXXX
64h C9h, C8h XXXX
Block Protection M29W320DT, M29W320DB
48/56
Appendix C Block Protection
Block protection can be use d to prevent any ope ratio n from mod ifying the dat a stored in the
Flash. Each Block can be protected individually. Once protected , Program and Erase
operations on the block fail to change the data.
There are three techniques that can be used to control Block Protection, these are the
Programmer technique, the In-System technique and Temporary Unprotection. Temporary
Unprotection is con tro lle d by the Reset/Block Temporary Unpr ot ect i on pin , RP ; this is
described in the Signal Descriptions section.
Unlike the Command Interface of the Program/Erase Controller, the techniques for
protecting an d un p ro te c tin g blo ck s chang e between different Flash me m or y sup p lier s . Fo r
example, the techniques for AMD parts will not work on Numonyx parts. Care should be
taken when changing drivers for one part to work on another.
C.1 Programmer Technique
The Programmer technique uses high (VID) voltage levels on some of the bus pins. These
cannot be achieved using a standard microprocessor bus, therefore the technique is
recommended only for use in Programm ing Equipment.
To protect a block follow the flowchart in Figure 16: Programmer Equipment Block Protect
Flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then
all blocks can be unprotected at the same time. To unprotect the chip follow Figure 17:
Programmer Equipment Chip Unprotect Flowchar t. Table 27: Programmer Technique Bus
Operations, BYTE = VIHor VIL, gives a summary of each operation.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a
pause is specified, it is followed as closely as possible. Do not abort the procedure before
reaching the end. Chip Unprotect can take several seconds and a user message should be
provided to show that the operation is progressing.
C.2 In-System Technique
The In-System technique requires a high voltage level on the Reset/Blocks Temporary
Unprotect pin, RP. This can be achieved without violating the maximum ratings of the
component s on the microprocesso r bus, therefore this technique is suitable for use af ter the
Flash has been fitted to the system.
To protect a block follow the flowchart in Figure 18: In-System Equipment Block Protect
Flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then
all the blocks can be unprotected at the same time. To unprotect the chip follow Figure
Figure 19: In-System Equipment Chip Unprotect Flowchart.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a
pause is specified, it is followed as closely as possible. Do not allow the microprocessor to
service interrupts that will upset the timing and do not abort the procedure before reaching
the end. Chip Unprotect can take several seconds and a user message should be provided
to show that the operation is progressing.
M29W320DT, M29W320DB Block Protection
49/56
Table 27. Programmer Te chnique Bus Operations, BYTE = VIHor VIL
Operation E G W Address Input s
A0-A20 Dat a Inputs/Outputs
DQ15A–1, DQ14-DQ0
Block Protect VIL VID VIL Pulse A9 = VID, A12-A2 0 Block Address
Others = X X
Chip Unprotect VID VID VIL Pulse A9 = VID, A12 = VIH, A15 = VIH
Others = X X
Block Protection
Verify VIL VIL VIH
A0 = VIL, A1 = VIH, A6 = VIL, A9 = VID,
A12-A20 Block Address
Others = X
Pass = XX01h
Retry = XX00h
Block Unprotection
Verify VIL VIL VIH
A0 = VIL, A1 = VIH, A6 = VIH,
A9 = VID, A12-A20 B lock Address
Others = X
Retry = XX01h
Pass = XX00h
Block Protection M29W320DT, M29W320DB
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Figure 16. Programmer Equipment Block Protect Flowchart
ADDRESS = BLOCK ADDRESS
AI03469
G, A9 = VID,
E = VIL
n = 0
Wait 4µs
Wait 100µs
W = VIL
W = VIH
E, G = VIH,
A0, A6 = VIL,
A1 = VIH
A9 = VIH
E, G = VIH
++n
= 25
START
FAIL
PASS
YES
NO
DATA
=
01hYES
NO
W = VIH
E = VIL
Wait 4µs
G = VIL
Wait 60ns
Read DATA
Verify Protect Set-upEnd
A9 = VIH
E, G = VIH
M29W320DT, M29W320DB Block Protection
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Figure 17. Programmer Equipment Chip Unprotect Flowcha r t
PROTECT ALL BLOCKS
AI03470
A6, A12, A15 = VIH(1)
E, G, A9 = VID
DATA
W = VIH
E, G = VIH
ADDRESS = CURRENT BLOCK ADDRESS
A0 = VIL, A1, A6 = VIH
Wait 10ms
=
00h
INCREMENT
CURRENT BLOCK
n = 0
CURRENT BLOCK = 0
Wait 4µs
W = VIL
++n
= 1000
START
YES
YESNO
NO LAST
BLOCK
YES
NO
E = VIL
Wait 4µs
G = VIL
Wait 60ns
Read DATA
FAIL PASS
Verify Unprotect Set-upEnd
A9 = VIH
E, G = VIH A9 = VIH
E, G = VIH
Block Protection M29W320DT, M29W320DB
52/56
Figure 18. In-System Equipment Block Protect Flowchart
AI03471
WRITE 60h
ADDRESS = BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIL
n = 0
Wait 100µs
WRITE 40h
ADDRESS = BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIL
RP = VIH ++n
= 25
START
FAIL
PASS
YES
NO
DATA
=
01hYES
NO
RP = VIH
Wait 4µs
Verify Protect Set-upEnd
READ DATA
ADDRESS = BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIL
RP = VID
ISSUE READ/RESET
COMMAND
ISSUE READ/RESET
COMMAND
WRITE 60h
ADDRESS = BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIL
M29W320DT, M29W320DB Block Protection
53/56
Figure 19. In-System Equipment Chip Unpr otect Flowchart
AI03472
WRITE 60h
ANY ADDRESS WITH
A0 = VIL, A1 = VIH, A6 = VIH
n = 0
CURRENT BLOCK = 0
Wait 10ms
WRITE 40h
ADDRESS = CURRENT BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIH
RP = VIH
++n
= 1000
START
FAIL PASS
YES
NO
DATA
=
00h
YESNO
RP = VIH
Wait 4µs
READ DATA
ADDRESS = CURRENT BLOCK ADDRESS
A0 = VIL, A1 = VIH, A6 = VIH
RP = VID
ISSUE READ/RESET
COMMAND
ISSUE READ/RESET
COMMAND
PROTECT ALL BLOCKS
INCREMENT
CURRENT BLOCK
LAST
BLOCK
YES
NO
WRITE 60h
ANY ADDRESS WITH
A0 = VIL, A1 = VIH, A6 = VIH
Verify Unprotect Set-upEnd
Revision history M29W320DT, M29W320DB
54/56
10 Revision history
Table 28. Document revision history
Date Revision Changes
March-2001 -01 First Issue (Brief Data)
08-Jun-2001 -02 Document expanded to full Product Preview
22-Jun-2001 -03 Minor text corrections to Read/Reset and Read CFI commands and
Status Register Error and Toggle Bits.
27-Jul-2001 -04
Document type: from Product Preview to Preliminary Data
TFBGA connections and Block Addresses (x16) diagrams
clarification
Write Protect and Block Unprotect clarification
CFI Primary Algorithm table, Block Protection change
05-Oct-2001 -05
Added Block Protection Appendix
“Write Protect/VPP” pin renamed to “VPP/Write Protect” to be
consistent with abbreviation. Changes to the VPP/WP pin
description, Figure 13 and Table 15. IPP added to Table 11 and ICC3
clarified. Modified description of VPP/WP operation in Unlock Bypass
Command section. Added VPP/WP decoupling capacitor to Figure
Figure 1.
Clarified Read/Reset operation during Erase Suspend.
07-Feb-2002 -06 TFBGA package changed from 48 ball to 63 ball
05-Apr-2002 -07
Description of Ready/Busy signal clarified (and Figure 12 modified)
Clarified allowable commands during bl ock erase
Clarified the mode the device returns to in the CFI Read Que r y
command section
19-Nov-2002 7.1
Erase Suspend Latency Time (typical and maximum) added to
Program, Erase Times and Program, Erase Endurance Cycles table.
Typical values added for Icc1 and Icc2 in DC characteristics table.
Logic Diagram and Data Toggle Flowchart corrected.
Revision numbering modified: a minor revision will be indicated by
incrementing the digit after the dot, and a major revision, by
incrementing the digit before the dot (revision version 07 equals 7.0).
Document promoted to full datasheet.
26-May-2003 7.2
Data Retention added to Table 6: Program, Erase Times and
Program, Erase Endurance Cycles, and Typical after 100k W/E
Cycles column removed. TSOP48 package mechanical updated.
Lead-free package options E and F added to Table 18: Ordering
Information Scheme.
16-Aug-2005 8.0 TFBGA48 package added through out document.
M29W320DT, M29W320DB Revision history
55/56
13-Jun-2006 9
Document title modified.
TFBGA63 package removed. ECOPACK text added.
RB signal updated in Figure 12: Reset/Block Temporary Unprotect
AC Waveforms. tPLYH updated in Table 15: Reset/Block Temporary
Unprotect AC Characteri stics.
In Table 7: Status Register Bits, DQ7 changed to DQ7 for Program,
Program during Erase Suspend and Program Error.
26-Mar-2008 10 Applied Numonyx branding.
27-May-2009 11
Added support for automotive grade as follows:
– Added automotive grade bullet to cover page;
– Added 7A column to Table 9.: Operating and AC Measurement
Conditions and all AC Characteristics tables.
Updated the order information table as follows:
– Added 7A, and other details to speed class opti ons
– Added temperature range = 3 Auto motive
22-Feb-2010 12
Added 80 ns device information to the the following:
– cover page
– Ordering Information.
–Table 9.: Operating and AC Measurement Conditions
–Table 12.: Read AC Characteristics
–Table 13.: Write AC Characteristics, Write Enable Controlled
–Table 15.: Reset/Block Temporary Unprotect AC Characteristics
In Table 9.: Operating and AC Measurement Conditions, changed
the min voltage from 3.0 to 2.7 V for 70 ns device.
Table 28. Document revision history (continued)
Date Revision Changes
M29W320DT, M29W320DB
56/56
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