REFERENCE DESIGN IRDCiP2005A-A International Rectifier * 233 Kansas Street, El Segundo, CA 90245 USA IRDCiP2005A-A: 1MHz, 65A DC, 80A Peak, Dual Phase, Sync Buck Converter using iP2005 Overview This reference design is capable of delivering a current of 65A DC or 80A peak (with heatsink) at an ambient temperature of 45C and airflow of 300LFM. Figures 1-19 provide performance graphs, thermal images, and waveforms. The shunt resistors are added for load line preciseness and can be changed to DCR sensing for higher efficiency. Figures 19-23, and Table 1 are provided to engineers as design references for implementing a dual phase iP2005 solution. The components installed on this demo board were selected based on operation at an input voltage of 12V and at a switching frequency of 1MHz. Changes from these set points may require optimizing the control loop and/or adjusting the values of input/output filters in order to meet the user's specific application requirements. Refer to the iP2005 datasheet for more information. Demo board Quick Start Guide Initial Settings: VOUT is set to 1.25V, but can be adjusted from 0.8375V to 1.6V by changing the settings of VID0 through VID5 according to the OnSemi data sheet of NCP5318. Power Up Procedure: 1. Apply drive power supply across Vdd and PGND. 2. Apply input voltage across VIN and PGND. 3. Turn on the enable signal through the DIP switch (SW1-pin 8). 4. Apply load and adjust to desired level. See recommendations below. 5. Install/uninstall a jumper to JMP3 to turn on and turn off current transient load (65A step)* * Note: the transient current load is a resistive load and the voltage across it is measured instead of current due to ESL limitations. For more details, please refer to figure 11 through 15. IRDCiP2005A-A Recommended Operating Conditions (refer to the iP2005 datasheet for maximum operating conditions) Input voltage: 9.5 - 13.2V Output voltage: 0.8375 -1.6V Switching Freq: 1MHz 02/04/2008 IRDCiP2005A-A_______ Output current: ___ This reference design is capable of delivering a continuous current of 65A (with heatsink) or 80A repetitive pulse current load (50A DC + 10% duty 30A DC) at an ambient temperature of 45C and an airflow of 300LFM. 35.0 34.0 33.0 32.0 31.0 30.0 29.0 28.0 27.0 26.0 25.0 24.0 23.0 22.0 21.0 20.0 19.0 18.0 17.0 16.0 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 Vo = 1.0V Vo = 1.25V Vo = 1.5V 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 Power Loss (W) Output Current Vs. Pow er Loss Fig. 1 Power Loss vs. Output Current for Vin=12V Fsw=1MHz, Vdd=5V, Ta=45dgC, Airflow=300LFM, with Heat Sink 80 Output current (am ps) Output Current Vs. Efficiency Vo = 1.0V Vo = 1.25V Vo = 1.5V 0 5 10 15 20 25 30 35 40 45 50 55 60 Output current (am ps) www.irf.com 2 65 70 75 80 Fig. 2 Efficiency vs. Output Current for Vin=12V Efficiency (%) 89% 88% 87% 86% 85% 84% 83% 82% 81% 80% 79% 78% 77% 76% 75% 74% 73% 72% 71% 70% 69% 68% 67% 66% 65% 64% 63% 62% 61% 60% Fsw=1MHz, Vdd=5V, Ta=45dgC, Airflow=300LFM, with Heat Sink _____________ _IRDCiP2005A-A 1.24 Load Line when Vin=12V, Vdd=5V, Ta=25degC, Fsw=1MHz 1.22 Vo (V) 1.2 1.18 1.16 1.14 1.12 0 20 40 60 80 Io (A) 100 Fig. 3 Load Line RLL = 1.2 m Phase Margin= 108 deg Fc= 25.3 kHz Conditions: Vin=12V Vo=1.25V Io=60A Fsw=1MHz Fig. 4 Bode Plot 3 www.irf.com IRDCiP2005A-A_______ ___ Fig. 5 Thermal Graph 1 Fsw=1MHz, Vdd=5V, Ta=45 C, Airflow=300LFM, Vin=12V, Vo=1.25V, Io=65A, with heat sink Fig. 6 Thermal Graph 2 Fsw=1MHz, Vdd=5V, Ta=45 C, Airflow=300LFM, Vin=12V, Vo=1.25V, Io=50A+30A (pulse), with heat sink www.irf.com 4 _____________ _IRDCiP2005A-A Vin En Fig. 7 Power-Up Sequence Vin=12V Vo=1.25V Io=20A Fsw=1MHz Vo Fig. 8 Power-Down Sequence Vin=12V Vo=1.25V Io=10A Fsw=1MHz 5 www.irf.com IRDCiP2005A-A_______ ___ Vo_pp=17.2mV Fig. 9 Output Voltage Ripple Vin=12V Vo=1.25V Io=50A Fsw=1MHz Vin=12V Vo=1.25V Io=20A Fsw=1MHz www.irf.com 6 Fig. 10 Over-Voltage Protection _____________ _IRDCiP2005A-A Transient Load Overview Many of today's high performance CPU's can easily draw transient currents with slew rate greater than 1000A/s. Unfortunately, replicating and demonstrating such a load event with such a high current slew rate on an evaluation board is not a trivial task. The smallest amount of stray inductance can quickly limit the slew rate of your load design and cause large voltage spikes. For example, a stray inductance of 30pH will create 30mV of over/undershoot for a given transient event with a slew rate of 1000A/s. Such an over/undershoot may already exceed the amount of voltage variation allowed in your design. A new approach over a traditional load design needs to be implemented. This reference design has an embedded load that is capable of delivering a 65A current step at slew rate of 1000A/s. The load design uses a parallel network of very small, low charge MOSFETs, 0402 capacitors, and 0603 load resistors (see Figure 1). This new approach greatly minimizes the parasitic inductance through the use of low ESL components and by distributing the switching current amongst many high speed switching MOSFETs. The pulsed current is run at a duty cycle of less than 2% which results in very little power dissipation and minimal device temperature rise. The net result closely replicates the dynamic load response of a high performance CPU. Validating the current waveform could only be done by measuring the voltage drop differentially across the load resistors during the switching event. Placing a current probe is not an option due to the ESL adder. Since the resistive load is a passive element, current flowing through the resistor is in phase with the voltage across the resistor. If the voltage across the resistive element changes at a rate of 1000V/s, one can assume the current is changing at the same rate (1000A/s). Figures 12, 14 & 15 show the validation of the load design for this particular demonstration tool. Four MOSFETs stages were used to create a 65A load step at a minimum of slew rate of 1000A/s. The parallel network of load resistors in this design creates an equivalent impedance of 9m. Differentially measuring the voltage drop across the load resistors of each MOSFET stage yields a voltage change of approximately 0.575V. Using Ohm's law we approximately get 65A of total load current (see Figure 12). Zooming in at the rising and falling edges of the load step, we can then measure the slew rate of the load step. In this particular design, we are achieving about40ns rise and fall times for 40A change which translate to about 1000A/s (see Figures 14 & 15). Fig. 11 Embedded High Slew Rate Load Design 7 www.irf.com IRDCiP2005A-A_______ ___ 80mV droop, 1.2m load line requirement met 65A Step Fig. 12 Transient Load Current Fig. 13 Vout under Transient Load di/dt=42A/44nS1000A/uS Fig. 14 Zoom-in rising edge of load di/dt=-42A/40nS-1000A/uS Fig. 15 Zoom-in falling edge of load Vsw1 Vsw2 Vo Fig. 16 Transient load step-up www.irf.com Fig. 17 Transient load step-down 8 _____________ _IRDCiP2005A-A Current (50A/10mV) Vo Fig. 18 Over-Current Protection Adjusting the Over-Current Limit R10 and R12 are the resistors used to adjust the over-current trip point. The trip point corresponds to the peak inductor current, refer to equation below to determine R10 and R12 values given the over current limit: R10+R12 = (70.5 X ILimit -90) ohm More details can be found in On-Semi data sheet of NCP5318. Mechanical Drawings Fig. 19 Heat Sink Photo Fig. 20 Mechanical Outline Drawing of Heatsink 9 www.irf.com IRDCiP2005A-A_______ Fig. 21 Top Layer View Fig. 22 Bottom Layer View www.irf.com 10 ___ _____________ _IRDCiP2005A-A Fig. 23 Reference Design Schematic 11 www.irf.com IRDCiP2005A-A_______ Table 1: Reference Design Bill of Materials www.irf.com 12 ___ _____________ _IRDCiP2005A-A Refer to the following documents for more details and guidelines detailed guidelines for design: iP2005A datasheet: Specifications and user guides about International Rectifier's integrated power modules used in this reference design NCP5318 datasheet: Specifications and user guides about the On-Semi multiphase buck controller used in this reference design AN-1028: Recommended Design, Integration and Rework Guidelines for International Rectifier's iPowIR Technology BGA and LGA and Packages This paper discusses optimization of the layout design for mounting iPowIR BGA and LGA packages on printed circuit boards, accounting for thermal and electrical performance and assembly considerations. Topics discussed includes PCB layout placement, and via interconnect suggestions, as well as soldering, pick and place, reflow, inspection, cleaning and reworking recommendations. AN-1030: Applying iPOWIR Products in Your Thermal Environment This paper explains how to use the Power Loss and SOA curves in the data sheet to validate if the operating conditions and thermal environment are within the Safe Operating Area of the iPOWIR product. AN-1047: Graphical solution for two branch heatsinking Safe Operating Area Detailed explanation of the dual axis SOA graph and how it is derived. Use of this design for any application should be fully verified by the customer. International Rectifier cannot guarantee suitability for your applications, and is not liable for any result of usage for such applications including, without limitation, personal or property damage or violation of third party intellectual property rights. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 13 www.irf.com